{"title":"Precision mass measurements in solution reveal properties of single cells and bioparticles","authors":"S. Olcum, N. Cermak, S. Manalis","doi":"10.1109/IEDM.2015.7409691","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409691","url":null,"abstract":"Precise characterization of biological materials ranging from single cells (~1-20 microns) to extracellular vesicles (20-200 nm) is of fundamental interest because of their biological and translational value. Here we discuss the value of precision mass measurements in solution for informing various physical and biological parameters, such as mass accumulation rate, longitudinal cell growth or cell density. We introduce how the limits of the single-particle mass measurements can be pushed down to nano-scale dimensions enabling the resolution of extracellular vesicles and viruses in solution. We believe with future advancements on the precision and throughput of this approach, the capability of analyzing biologically relevant particles in solution will have broad biological and translational impact.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122698989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Moens, A. Banerjee, M. Uren, M. Meneghini, S. Karboyan, I. Chatterjee, P. Vanmeerbeek, M. Casar, C. Liu, A. Salih, E. Zanoni, G. Meneghesso, Martin Kuball, M. Tack
{"title":"Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs","authors":"P. Moens, A. Banerjee, M. Uren, M. Meneghini, S. Karboyan, I. Chatterjee, P. Vanmeerbeek, M. Casar, C. Liu, A. Salih, E. Zanoni, G. Meneghesso, Martin Kuball, M. Tack","doi":"10.1109/IEDM.2015.7409831","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409831","url":null,"abstract":"The role of buffer traps (identified as CN acceptors through current DLTS) in the off-state leakage and dynamic Ron of 650V rated GaN-on-Si power devices is investigated. The dynamic Ron is strongly voltage-dependent, due to the interplay between the dynamic properties of the CN traps and the presence of space-charge limited current components. This results in a complete suppression of dyn Ron degradation under HTRB conditions between 420V and 850V.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123370591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Á. Szabó, R. Rhyner, H. Carrillo-Nuñez, M. Luisier
{"title":"Phonon-limited performance of single-layer, single-gate black phosphorus n- and p-type field-effect transistors","authors":"Á. Szabó, R. Rhyner, H. Carrillo-Nuñez, M. Luisier","doi":"10.1109/IEDM.2015.7409680","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409680","url":null,"abstract":"Phosphorene is a novel 2-D material with a direct band gap and a high electron/hole mobility, which makes it attractive for logic applications. The theoretical investigations of such devices have so far lacked either one or both key ingredients of realistic simulations: a full-band description of the electronic states and the consideration of electron-phonon scattering. In this paper we present the first ab-initio quantum transport simulations of phosphorene transistors accounting for these effects. We show that the DOS bottleneck does not limit the performance of phosphorene FETs, that the armchair configuration takes advantage of its lower effective mass and higher mobility at gate lengths above 10 nm, but that these properties become an obstacle at shorter gate lengths. We also demonstrate that phosphorene FETs with 10 nm gate length outperform MoS2, regardless of the channel orientation.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"227 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123159408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Then, L. Chow, S. Dasgupta, S. Gardner, M. Radosavljevic, V. Rao, S. Sung, G. Yang, P. Fischer
{"title":"High-K gate dielectric depletion-mode and enhancement-mode GaN MOS-HEMTs for improved OFF-state leakage and DIBL for power electronics and RF applications","authors":"H. Then, L. Chow, S. Dasgupta, S. Gardner, M. Radosavljevic, V. Rao, S. Sung, G. Yang, P. Fischer","doi":"10.1109/IEDM.2015.7409710","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409710","url":null,"abstract":"The characteristics of high-k gate dielectric depletion-mode and enhancement-mode GaN MOS-HEMTs is reviewed. High-k gate dielectric depletion-mode GaN MOS-HEMT with thin AlInN polarization layer of 2.5nm in the gate stack is shown to exhibit \"negative\" capacitance and steep SS<;40mV/dec [31], which may have implications for low-power electronics. Enhancement-mode operation is achieved by removing the AlInN polarization layer from the gate stack [31-36]. Excellent DIBL, low IOFF, low gate leakage, and low RON are achieved due to the scaled Toxe=23Å using high-k gate dielectric and N+ regrown InGaN source/drain [32]. The DIBL and IOFF-RON characteristics of the high-k enhancement-mode GaN MOS-HEMT [32] are the best reported for a GaN transistor. These characteristics make the high-k gate dielectric depletion-mode and enhancement-mode GaN MOS-HEMT attractive for power electronics and RF applications.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115418861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Le Huang, Zhiyong Zhang, Bingyan Chen, Lianmao Peng
{"title":"Flexible graphene hall sensors with high sensitivity","authors":"Le Huang, Zhiyong Zhang, Bingyan Chen, Lianmao Peng","doi":"10.1109/IEDM.2015.7409822","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409822","url":null,"abstract":"High sensitivity and flexible Graphene Hall elements (GHEs) were demonstrated. The average and maximum current-related sensitivity of our GHEs are respectively 2030 V/AT and 2364 V/AT, outperforming almost all reported Hall sensors. In addition, the GHEs fabricated on flexible substrate show high sensitivity, linearity and stability against bending. Our work shows that graphene Hall sensors are promising in accurate detection of magnetic field and flexible sensing systems.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131470182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Feilchenfeld, F. G. Anderson, T. Barwicz, S. Chilstedt, Y. Ding, J. Ellis-Monaghan, D. Gill, C. Hedges, J. Hofrichter, F. Horst, M. Khater, E. Kiewra, R. Leidy, Y. Martin, K. McLean, M. Nicewicz, J. Orcutt, B. Porth, J. Proesel, C. Reinholm, J. Rosenberg, W. Sacher, A. Stricker, C. Whiting, C. Xiong, A. Agrawal, F. Baker, C. Baks, B. Cucci, D. Dang, T. Doan, F. Doany, S. Engelmann, M. Gordon, E. Joseph, J. Maling, S. Shank, X. Tian, C. Willets, J. Ferrario, M. Meghelli, F. Libsch, B. Offrein, W. Green, W. Haensch
{"title":"An integrated silicon photonics technology for O-band datacom","authors":"N. Feilchenfeld, F. G. Anderson, T. Barwicz, S. Chilstedt, Y. Ding, J. Ellis-Monaghan, D. Gill, C. Hedges, J. Hofrichter, F. Horst, M. Khater, E. Kiewra, R. Leidy, Y. Martin, K. McLean, M. Nicewicz, J. Orcutt, B. Porth, J. Proesel, C. Reinholm, J. Rosenberg, W. Sacher, A. Stricker, C. Whiting, C. Xiong, A. Agrawal, F. Baker, C. Baks, B. Cucci, D. Dang, T. Doan, F. Doany, S. Engelmann, M. Gordon, E. Joseph, J. Maling, S. Shank, X. Tian, C. Willets, J. Ferrario, M. Meghelli, F. Libsch, B. Offrein, W. Green, W. Haensch","doi":"10.1109/IEDM.2015.7409768","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409768","url":null,"abstract":"A manufacturable platform of CMOS, RF and opto-electronic devices fully PDK enabled to demonstrate a 4×25 Gb/s reference design is presented. With self-aligned fiber attach, this technology enables low-cost O-band data-com transceivers. In addition, this technology can offer enhanced performance and yield in hybrid-assembly for applications at 25 Gbaud and beyond.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"222 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131560985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yu Lu, T. Zhong, W. Hsu, S. Kim, X. Lu, J. Kan, C. Park, W. C. Chen, X. Li, X. Zhu, P. Wang, M. Gottwald, J. Fatehi, L. Seward, J. P. Kim, N. Yu, G. Jan, J. Haq, S. Le, Y. Wang, L. Thomas, J. Zhu, H. Liu, Y. Lee, R. Tong, K. Pi, D. Shen, R. He, Z. Teng, V. Lam, R. Annapragada, T. Torng, P. Wang, S. H. Kang
{"title":"Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications","authors":"Yu Lu, T. Zhong, W. Hsu, S. Kim, X. Lu, J. Kan, C. Park, W. C. Chen, X. Li, X. Zhu, P. Wang, M. Gottwald, J. Fatehi, L. Seward, J. P. Kim, N. Yu, G. Jan, J. Haq, S. Le, Y. Wang, L. Thomas, J. Zhu, H. Liu, Y. Lee, R. Tong, K. Pi, D. Shen, R. He, Z. Teng, V. Lam, R. Annapragada, T. Torng, P. Wang, S. H. Kang","doi":"10.1109/IEDM.2015.7409770","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409770","url":null,"abstract":"We present for the first time a fully functional 40 nm perpendicular STT-MRAM macro (1 Mb, ×32/×64 IO) embedded into a foundry standard CMOS logic platform. We achieved target design specifications of 20 ns read access time and 20-100 ns write cycle time without redundancy repair at standard core and IO voltages. The full 1 Mb macro can be switched reliably with write pulse as short as 6 ns, which results in full-chip write power of ~ 3.2 μW/Mbps at ×64. This is the lowest eNVM write power reported at a full-chip level and about three orders of magnitude smaller than that of eFLASH. The 0.5 Mbit high-density bitcell array also demonstrates good Rp distribution and 100 % STT switching. Our results demonstrate superior power-area-feature attributes of perpendicular STT-MRAM as a best-in-class unified eNVM solution for Internet-of-Things (IOT) applications at 40 nm as well as the scalability of these advantages to 28 nm and beyond.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131062130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Device and system level design considerations for analog-non-volatile-memory based neuromorphic architectures","authors":"S. Eryilmaz, D. Kuzum, Shimeng Yu, H. Wong","doi":"10.1109/IEDM.2015.7409622","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409622","url":null,"abstract":"This paper gives an overview of recent progress in the brain-inspired computing field with a focus on implementation using emerging memories as electronic synapses. Design considerations and challenges such as requirements and design targets on multilevel states, device variability, programming energy, array-level connectivity, fan-in/fan-out, wire energy, and IR drop are presented. Wires are increasingly important in design decisions, especially for large systems; and cycle-to-cycle variations have large impact on learning performance.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128352504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"DARPA neurocomputing","authors":"D. Hammerstrom","doi":"10.1109/iedm.2015.7409630","DOIUrl":"https://doi.org/10.1109/iedm.2015.7409630","url":null,"abstract":"DARPA is investigating machine learning algorithms and computer architectures that mimic selected characteristics of human intelligence, such as learning and pattern recognition, to address the challenges of data recognition, control and complexity in the continuously evolving environments where DoD systems operate. Learning approaches to date have shown great promise in solving a wider range of problems in less constrained environments, but require high-precision and long compute times, limiting their ability to learn large data sets rapidly or adapt in real time in the field. Neural inspired algorithms allow the use of low precision, hierarchical, temporal memory structures that can rapidly evolve with changing data, minimizing the need for long training times and maximizing rapid, on-line (in the application) real time adaptation. These capabilities coupled with optimized silicon will result in high performance and low power for real-time, embedded system operation for a wide range of applications.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"9 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131704063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Z. Stanojevic, O. Baumgartner, F. Mitterbauer, H. Demel, C. Kernstock, M. Karner, V. Eyert, A. France-Lanord, P. Saxe, C. Freeman, E. Wimmer
{"title":"Physical modeling - A new paradigm in device simulation","authors":"Z. Stanojevic, O. Baumgartner, F. Mitterbauer, H. Demel, C. Kernstock, M. Karner, V. Eyert, A. France-Lanord, P. Saxe, C. Freeman, E. Wimmer","doi":"10.1109/IEDM.2015.7409631","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409631","url":null,"abstract":"We go far beyond classical TCAD in and create a simulation framework that is ready for devices based on contemporary and future technology nodes. We do so by extending the common drift-diffusion-type device simulation framework with additional tools: (i) a k p-based subband structure tool, (ii) a deterministic subband Boltzmann transport solver, and (iii) a TCAD-compatible quantum transport solver, to capture every important aspect of device operation at the nano-scale. An atomistic ab-initio tool suite complements the framework providing material properties that would be hard to obtain otherwise. The capabilities of the approach are demonstrated on two different devices featuring non-planar geometry and alternative channel materials.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125592873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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