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2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)最新文献

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Determination of ultrasonic effect mode providing formation of cavitation area in high-viscous and non-Newtonian liquids 在高粘性和非牛顿液体中提供空化区形成的超声效应模式的确定
2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) Pub Date : 2014-08-25 DOI: 10.1109/EDM.2014.6882511
V. Khmelev, R. Golykh, A. Shalunov, S. Khmelev, Ksenija A. Karzakova
{"title":"Determination of ultrasonic effect mode providing formation of cavitation area in high-viscous and non-Newtonian liquids","authors":"V. Khmelev, R. Golykh, A. Shalunov, S. Khmelev, Ksenija A. Karzakova","doi":"10.1109/EDM.2014.6882511","DOIUrl":"https://doi.org/10.1109/EDM.2014.6882511","url":null,"abstract":"The article presents the phenomenological model of the formation of cavitation area in high-viscous and non-Newtonian liquids. Proposed model is based on the study of the formation of cavitation area as a whole but taking into account the main effects and phenomena occurring inside this area. The analysis of the model allows revealing optimum intensities of the ultrasonic influence, which are necessary for the appearance of the mode of developed cavitation for liquids different in their rheological properties. The analysis of the model lets determining, that optimum intensities of the influence for the most of liquids does not exceed 40 W/cm2 at the frequency of 22 kHz, with the exception of dilatant fluids, for which intensity of influence can achieve 100 W/cm2. As a result of the model analysis it is found out the change of optimum intensity for non-Newtonian liquids with the course of time induced by the relaxation of viscosity. Increase or decrease of the intensity, which is necessary for the formation of cavitation area, achieves 20 W/cm2. Obtained results can be applied for the choice of power modes of the ultrasonic technological equipment and the control of the process of cavitation treatment of media with different rheological properties.","PeriodicalId":332225,"journal":{"name":"2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124285704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Smart robust interpolator 智能鲁棒插值器
2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) Pub Date : 2014-08-25 DOI: 10.1109/EDM.2014.6882488
M. Essai
{"title":"Smart robust interpolator","authors":"M. Essai","doi":"10.1109/EDM.2014.6882488","DOIUrl":"https://doi.org/10.1109/EDM.2014.6882488","url":null,"abstract":"A proposed smart robust interpolator that based on robust trained neural networks is presented and compared with other popular interpolation methods widely implemented in mathematical, industrial and manufacturing applications. Recently many interpolation methods have been developed, and examined. Most of them are based on looking for the optimal interpolation trajectories based on the well known data set. However, it is rare to build robust interpolator based on noisy data, and this is one of the most popular topics in industrial testing and measurement applications. The smart robust neural network (SRNN) interpolator reported in this paper provides a convenient and simple way to solve this problem and offers more accurate interpolation results based on given data set in the presence of outliers. This method can be implemented in many applications, such as manipulators measurements and calibrations, automations, unmanned air vehicles, Upward Velocity of Rockets, and semiconductor manufacturing processes.","PeriodicalId":332225,"journal":{"name":"2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116769742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of output characteristics of three-phase voltage source inverter with hysteresis control 带滞后控制的三相电压源逆变器输出特性分析
2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) Pub Date : 2014-08-25 DOI: 10.1109/EDM.2014.6882563
N. M. Kolmakov, I. A. Bakhovtsev
{"title":"Analysis of output characteristics of three-phase voltage source inverter with hysteresis control","authors":"N. M. Kolmakov, I. A. Bakhovtsev","doi":"10.1109/EDM.2014.6882563","DOIUrl":"https://doi.org/10.1109/EDM.2014.6882563","url":null,"abstract":"This paper presents analysis of the output characteristics of three-phase voltage source inverter with conventional hysteresis control. The article describes the concept of scalar hysteresis current control. A computer model of three-phase voltage source inverter with scalar hysteresis current control was developed. The basic diagrams illustrating working capacity of designed control scheme was received. The basic output characteristics were obtained. Analytical and quantitative assessments were made.","PeriodicalId":332225,"journal":{"name":"2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121124182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Designing of multi-frequency source of ultrasonic action with radiator in form of stair-step disc 以阶梯盘为形式的多频辐射源的设计
2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) Pub Date : 2014-08-25 DOI: 10.1109/EDM.2014.6882509
V. Khmelev, A. N. Galakhov, A. Shalunov, A. V. Shalunova
{"title":"Designing of multi-frequency source of ultrasonic action with radiator in form of stair-step disc","authors":"V. Khmelev, A. N. Galakhov, A. Shalunov, A. V. Shalunova","doi":"10.1109/EDM.2014.6882509","DOIUrl":"https://doi.org/10.1109/EDM.2014.6882509","url":null,"abstract":"The article is devoted to designing of multi-frequency source of ultrasonic action with radiator in form of stair-step disc.","PeriodicalId":332225,"journal":{"name":"2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127206566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Test software for system of electrochemical LIA material research 电化学LIA材料研究系统测试软件
2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) Pub Date : 2014-08-25 DOI: 10.1109/EDM.2014.6882557
V. Borovikov, S. Plotnikov, A. V. Markov, V. Makukha
{"title":"Test software for system of electrochemical LIA material research","authors":"V. Borovikov, S. Plotnikov, A. V. Markov, V. Makukha","doi":"10.1109/EDM.2014.6882557","DOIUrl":"https://doi.org/10.1109/EDM.2014.6882557","url":null,"abstract":"Test software for system of electrochemical LIA material research is developed. The software includes all the functionality that may be required for debugging hardware of the application as well as that is needed in software of the application.","PeriodicalId":332225,"journal":{"name":"2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122497489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The noise reduction in variable hall data by digital filtration 数字滤波对变霍尔数据的降噪
2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) Pub Date : 2014-08-25 DOI: 10.1109/EDM.2014.6882469
A. Trifanov, D. Protasov, V. Kostuchenko
{"title":"The noise reduction in variable hall data by digital filtration","authors":"A. Trifanov, D. Protasov, V. Kostuchenko","doi":"10.1109/EDM.2014.6882469","DOIUrl":"https://doi.org/10.1109/EDM.2014.6882469","url":null,"abstract":"In this paper it is shown, that the digital filtration of result of variable-filed Hall measurements by weighting digital-data filter with Blackman window lead to error suppression for densities and mobilities of charge carriers, determined by mobility spectrum analysis with multicarrier fitting.","PeriodicalId":332225,"journal":{"name":"2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122464773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Deriving conformance tests for telecommunication protocols using μJava tool 使用μJava工具推导电信协议的一致性测试
2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) Pub Date : 2014-08-25 DOI: 10.1109/EDM.2014.6882499
A. Ermakov
{"title":"Deriving conformance tests for telecommunication protocols using μJava tool","authors":"A. Ermakov","doi":"10.1109/EDM.2014.6882499","DOIUrl":"https://doi.org/10.1109/EDM.2014.6882499","url":null,"abstract":"In this paper, we have proposed a method for improving the fault coverage of EFSM based test suites using the mutation testing for its proper java implementation.","PeriodicalId":332225,"journal":{"name":"2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117081440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Microwave elliptic filter with resonance coupling 共振耦合微波椭圆滤波器
2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) Pub Date : 2014-08-25 DOI: 10.1109/EDM.2014.6882498
P. G. Bogomolov, V. Razinkin, V. Khrustalev
{"title":"Microwave elliptic filter with resonance coupling","authors":"P. G. Bogomolov, V. Razinkin, V. Khrustalev","doi":"10.1109/EDM.2014.6882498","DOIUrl":"https://doi.org/10.1109/EDM.2014.6882498","url":null,"abstract":"This paper presents a highly selective elliptic filter VHF and UHF range wherein a priori specified rejection frequencies in a stopband. Due to incomplete loads inclusion and serial communication circuit provide the high Q-factor of resonant circuits and small direct loss in the passband of the filter.","PeriodicalId":332225,"journal":{"name":"2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124157815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Simulation of control system for parallel operation of AC/DC and DC/DC converters for microprocessor implementation 微处理器实现的AC/DC和DC/DC转换器并联操作控制系统仿真
2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) Pub Date : 2014-08-25 DOI: 10.1109/EDM.2014.6882573
D. Shtein, Andrei A. Geist, D. Korobkov, M. V. Balagurov, A. Volkov
{"title":"Simulation of control system for parallel operation of AC/DC and DC/DC converters for microprocessor implementation","authors":"D. Shtein, Andrei A. Geist, D. Korobkov, M. V. Balagurov, A. Volkov","doi":"10.1109/EDM.2014.6882573","DOIUrl":"https://doi.org/10.1109/EDM.2014.6882573","url":null,"abstract":"The advances of digital control systems require a new approach for design and development of power electronics devices. Modern simulation methods allow creating control systems of power converters based on their real microprocessor implementation. Thus, a digital control algorithm of device can be completely recreated, debugged and verified in the model. This paper proposes the control algorithm for parallel operation of AC/DC and DC/DC converters for microprocessor implementation. The simulation model has been developed in PSIM program considering features of construction real digital control systems.","PeriodicalId":332225,"journal":{"name":"2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121585351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Epitaxial CaF2/BaF2-on-Si layers and electronic properties of the interface with the substrate 外延CaF2/BaF2-on-Si层及其与衬底界面的电子性能
2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) Pub Date : 2014-08-25 DOI: 10.1109/EDM.2014.6882484
E. Fedosenko, A. N. Akimov, A. Klimov, V. Shumsky, V. G. Erkov, S. P. Suprun
{"title":"Epitaxial CaF2/BaF2-on-Si layers and electronic properties of the interface with the substrate","authors":"E. Fedosenko, A. N. Akimov, A. Klimov, V. Shumsky, V. G. Erkov, S. P. Suprun","doi":"10.1109/EDM.2014.6882484","DOIUrl":"https://doi.org/10.1109/EDM.2014.6882484","url":null,"abstract":"Layers of CaF<sub>2</sub> and BaF<sub>2</sub> were grown on Si substrates using molecular beam epitaxy. X-ray photoelectron spectroscopy has shown that the interface in Si-BaF<sub>2</sub> structure at 750°C is mainly formed with Si-Ba bonds. Metal-insulator structures have been formed, and capacitance-voltage characteristics (C-V and G-V characteristics) were measured at various test voltage frequencies. Despite of the high density of broken bonds at the interface (about 10<sup>14</sup> cm<sup>-2</sup>), the density of electronic states calculated from C-V and G-V characteristics was about 10<sup>11</sup> eV<sup>-1</sup>cm<sup>-2</sup>.","PeriodicalId":332225,"journal":{"name":"2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133772953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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