ICTACT Journal on Microelectronics最新文献

CURRENT CONTROLLED TRANSCONDUCTANCE AMPLIFIER (CCTA) USING ADVANCED DESIGN SYSTEM 采用先进设计系统的电流控制跨导放大器

ICTACT Journal on Microelectronics Pub Date : 2020-01-01 DOI: 10.21917/ijme.2020.0145

M. A. Deshmukh, U. Kshirsagar

{"title":"CURRENT CONTROLLED TRANSCONDUCTANCE AMPLIFIER (CCTA) USING ADVANCED DESIGN SYSTEM","authors":"M. A. Deshmukh, U. Kshirsagar","doi":"10.21917/ijme.2020.0145","DOIUrl":"https://doi.org/10.21917/ijme.2020.0145","url":null,"abstract":"Complementary Metal Oxide Semiconductor (CMOS) is a technology used to produce integrated circuit. CMOS circuits are found in several types of electronic components, including microprocessors, batteries and digital camera image sensors. The MOS in CMOS refers to the transistor in a CMOS component called MOSFETs (metal oxide semiconductor field-effect transistors). In the project we are going to design novel CCCCTA, developed in CMOS technology using Advanced Design System (ADS). Current conveyors are unity gain active building block having high linearity, wide dynamic range and provide higher gain-bandwidth product. The current conveyors operate at low voltage supplies and consume less power. It has high input impedance, low output impedance, high CMRR and high slew rate. The current mode circuits such as Current conveyors have emerged as an important class of circuits in the field of analog electronics. The new structured CCCCTA the balanced differential-pair structure is used instead of the trans-linear structure as in the original CCCCTA and our proposed block are the requirements of bias current which is used to control the parasitic resistance at the input current port and the number of MOSFETs.","PeriodicalId":33160,"journal":{"name":"ICTACT Journal on Microelectronics","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48341157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

DESIGN AND ANALYSIS OF InP AND GaAs DOUBLE GATE MOSFET TRANSISTORS FOR LOW POWER APPLICATIONS 用于低功率应用的InP和GaAs双栅极MOSFET晶体管的设计与分析

ICTACT Journal on Microelectronics Pub Date : 2020-01-01 DOI: 10.21917/ijme.2020.0151

A. S. Geege, P. Vimala, T. S. Arun Samuel, N. Arumugam

{"title":"DESIGN AND ANALYSIS OF InP AND GaAs DOUBLE GATE MOSFET TRANSISTORS FOR LOW POWER APPLICATIONS","authors":"A. S. Geege, P. Vimala, T. S. Arun Samuel, N. Arumugam","doi":"10.21917/ijme.2020.0151","DOIUrl":"https://doi.org/10.21917/ijme.2020.0151","url":null,"abstract":"This paper deals with a novel Double Gate MOSFET (DG MOSFET) which is constructed by the unification of III group materials (Indium, Gallium) and V group materials (Phosphide, Arsenide) is analyzed. Due to its short channel effect immunization, leakage current reduction and higher scaling potential, DG MOSFET as one of the most comforting devices for low power applications. In this work, we investigated the effect of DG MOSFET based on Indium Phosphide (InP) and Gallium Arsenide (GaAs) on optimal performance and drain current characteristics by replacing traditional DG MOSFET based on silicon. The transistor’s channel length is set to 20 nm. Both devices have been modeled using the NanoHub simulator and characteristics has been examined using Matlab. The descriptive analysis of characteristics has been performed through the corresponding plot structures - energy band structure, I D vs V GS characteristics, I D vs V GS characteristics, transconductance. From the results provided, it has been found that the DG MOSFET device based on InP offers ON current 10 -3 A is better than the DG MOSFET device based on Silicon and Gallium Arsenide (GaAs).","PeriodicalId":33160,"journal":{"name":"ICTACT Journal on Microelectronics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44238633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

DESIGN AND ANALYSIS OF QUAD BAND ANTENNA FOR WIRELESS SYSTEMS 无线系统四波段天线的设计与分析

ICTACT Journal on Microelectronics Pub Date : 2020-01-01 DOI: 10.21917/ijme.2020.0149

Kuldeep Galav, M. Meena

引用次数: 1

PROCESS FOR IMPLEMENTATION OF TRANSMISSION LINE ON STANDARD SILICON SUBSTRATE AND ITS CHARACTERIZATION AT KA-BAND 在标准硅衬底上实现传输线的工艺及其在ka波段的特性

ICTACT Journal on Microelectronics Pub Date : 2020-01-01 DOI: 10.21917/ijme.2020.0150

K. Singh, A. V. Nirmal

引用次数: 0

FPGA IMPLEMENTATION OF CALIB_IO, WAVE AND CLOCK GENERATION MODULES FOR GRAIN SORTING MACHINE 粮食分拣机calibio、波形和时钟生成模块的FPGA实现

ICTACT Journal on Microelectronics Pub Date : 2020-01-01 DOI: 10.21917/ijme.2020.0147

S. Sujitha, N. Augustia

引用次数: 0