发布求助
文献互助 智能选刊 最新文献

Integrated and Guided Wave Optics最新文献

筛选
英文 中文
Geodesic Optics: New Components 测地线光学:新元件
Integrated and Guided Wave Optics Pub Date : 1980-10-01 DOI: 10.1364/JOSA.70.001230
S. Sottini, V. Russo, G. Righini
{"title":"Geodesic Optics: New Components","authors":"S. Sottini, V. Russo, G. Righini","doi":"10.1364/JOSA.70.001230","DOIUrl":"https://doi.org/10.1364/JOSA.70.001230","url":null,"abstract":"Several reliable elementary components for integrated optics have been already built and tested, but only few of them are compatible with multimode operation. At the same time, the problem related to hybrid integration of the different components have limited so far the implementation of more complex circuits.","PeriodicalId":330440,"journal":{"name":"Integrated and Guided Wave Optics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115975704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Crystallographic and Electrooptic Properties of Cleaved LiNbO3 劈裂LiNbO3的晶体学和电光性质
Integrated and Guided Wave Optics Pub Date : 1980-08-01 DOI: 10.1063/1.328301
I. Kaminow, E. Turner, R. L. Barns, J. Bernstein
{"title":"Crystallographic and Electrooptic Properties of Cleaved LiNbO3","authors":"I. Kaminow, E. Turner, R. L. Barns, J. Bernstein","doi":"10.1063/1.328301","DOIUrl":"https://doi.org/10.1063/1.328301","url":null,"abstract":"The predominant cleavage plane in LiNbO3 is known to be of the general (01.2) type.1 However, neither the absolute orientation of the plane with respect to the standard crystal x, y, z axes nor with respect to the lattice structure has been determined. Recent interest in the use of x-cut plates with cleaved end-faces for use in electrooptic devices2-4 has prompted us to establish the absolute orientation of the cleavage plane.","PeriodicalId":330440,"journal":{"name":"Integrated and Guided Wave Optics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121633738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Whispering Gallery Lasers on Semi-Insulating GaAs Substrates 半绝缘GaAs衬底上的低语廊激光器
Integrated and Guided Wave Optics Pub Date : 1980-04-15 DOI: 10.1063/1.91631
I. Ury, S. Margalit, N. Bar-chaim, M. Yust, D. Wilt, A. Yariv
{"title":"Whispering Gallery Lasers on Semi-Insulating GaAs Substrates","authors":"I. Ury, S. Margalit, N. Bar-chaim, M. Yust, D. Wilt, A. Yariv","doi":"10.1063/1.91631","DOIUrl":"https://doi.org/10.1063/1.91631","url":null,"abstract":"Recently, integrated optical circuits consisting of optical detectors, active electronic devices, and injection lasers have been fabricated on semi-insulating GaAs substrates.1,2,3 A severe limit however is placed on the maximum allowable chip size if the lasers are formed between parallel cleaved facets. This problem can be alleviated if the light in the laser cavity is made to follow a semi-circular path to a single mirror facet or to follow along a quarter circle at a cleaved corner. In our implementation, the optical mode in the laser cavity is guided by total internal reflection along a single curved dielectric interface in the manner of the whispering gallery.4 Whispering gallery injection lasers have been previously fabricated,5 but only on conductive substrates.","PeriodicalId":330440,"journal":{"name":"Integrated and Guided Wave Optics","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116638517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Be Implanted (GaAl)As Stripe Geometry Lasers 作为条纹几何激光器被植入(GaAl)
Integrated and Guided Wave Optics Pub Date : 1980-02-15 DOI: 10.1063/1.91457
N. Bar-chaim, M. Lanir, S. Margalit, I. Ury, D. Wilt, M. Yust, A. Yariv
{"title":"Be Implanted (GaAl)As Stripe Geometry Lasers","authors":"N. Bar-chaim, M. Lanir, S. Margalit, I. Ury, D. Wilt, M. Yust, A. Yariv","doi":"10.1063/1.91457","DOIUrl":"https://doi.org/10.1063/1.91457","url":null,"abstract":"Ion implantation has gained much attention recently as a fabrication technique for GaAs optoelectronic devices. Hunsperger et al1 produced p-type layers in GaAs by implanting Be at an energy of 40 keV. More recent investigations have reported on the electrical properties of GaAs implanted with Be at energies up to 400 keV.2-4 Planar p-n junctions were fabricated with low leakage currents and abrupt breakdown characteristics.5 No information has yet been reported on Be implantation in GaAlAs.","PeriodicalId":330440,"journal":{"name":"Integrated and Guided Wave Optics","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121109899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Influence of Growth Conditions on The Threshold Current Density of Double Heterostructure Lasers Prepared by Molecular Beam Epitaxy 生长条件对分子束外延制备双异质结构激光器阈值电流密度的影响
Integrated and Guided Wave Optics Pub Date : 1980-01-17 DOI: 10.1049/EL:19800053
A. Cho, H. Casey, C. Radice, P. Foy
{"title":"Influence of Growth Conditions on The Threshold Current Density of Double Heterostructure Lasers Prepared by Molecular Beam Epitaxy","authors":"A. Cho, H. Casey, C. Radice, P. Foy","doi":"10.1049/EL:19800053","DOIUrl":"https://doi.org/10.1049/EL:19800053","url":null,"abstract":"The effect on threshold current density Jth of the use of an air-lock sample exchange mechanism, substrate preparation, and Al source purity was investigated for GaAs-Al0.27Ga0.73As double heterostructure (DH) lasers grown by molecular-beam epitaxy (MBE). The importance of having an airlock sample exchange can be illustrated by the improvement of threshold current density as a function of the number of runs after the growth chamber is opened to atmosphere for oven refilling. Usually the threshold current density Jth is more than four times higher than that of wafers grown by liquid phase epitaxy on the first run, and then Jth improves to about 1.5 times higher on the third and fourth runs. Finally, Jth on the fifth and later runs is comparable to that for wafers grown by LPE. Also, care must be taken in substrate selection and preparation and in the use of Al free of undesirable impurities. The detailed sample preparation and the analysis of the Al source will be discussed. Figure 1 shows the temperature-time cycles used to grow the DH lasers. Broad-area lasers with cavity lengths between 400 to 500 μm having Jth of 1.25×103, 1.16x103, 1.04×103 A/cm2 for active layer thickness of 0.22, 0.16 and 0.10 μm respectively have been achieved. For a cavity length of 570 μm, the wafer with 0.1 μm active layer gave Jth as low as 910 A/cm2. These DH lasers have been fabricated as proton bombarded stripe-geometry lasers (12 μm × 380 μm) and have a room temperature threshold current of 80 mA. The desirable features of molecular beam epitaxy are the capability of growth over a large substrate area (4 cm x 2.5 cm) and the reproducibility of this growth technique.","PeriodicalId":330440,"journal":{"name":"Integrated and Guided Wave Optics","volume":"186 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123552974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 37
Electrooptic Scanning of Light Coupled from a Corrugated LiNbO3 Waveguide 波纹LiNbO3波导耦合光的电光扫描
Integrated and Guided Wave Optics Pub Date : 1978-05-15 DOI: 10.1063/1.89849
C. Hong, A. Yariv, Bin Chen
{"title":"Electrooptic Scanning of Light Coupled from a Corrugated LiNbO3 Waveguide","authors":"C. Hong, A. Yariv, Bin Chen","doi":"10.1063/1.89849","DOIUrl":"https://doi.org/10.1063/1.89849","url":null,"abstract":"Periodic perturbations of dielectric waveguides have been used extensively for reflection [1], output coupling [2], and Bragg deflection [3,4]. In the latter case Bragg diffraction of light from a variable wavelength acoustic wave was used for scanning the optical beam [4].","PeriodicalId":330440,"journal":{"name":"Integrated and Guided Wave Optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115740987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Dual Beam Laser: A Gaas Double-Cavity Laser with Branching Output Waveguides 双光束激光器:具有分支输出波导的Gaas双腔激光器
Integrated and Guided Wave Optics Pub Date : 1978-05-15 DOI: 10.1063/1.89886
J. Merz, R. Logan
{"title":"Dual Beam Laser: A Gaas Double-Cavity Laser with Branching Output Waveguides","authors":"J. Merz, R. Logan","doi":"10.1063/1.89886","DOIUrl":"https://doi.org/10.1063/1.89886","url":null,"abstract":"A new device is reported in this paper which incorporates a branching taper within the optical cavity of a GaAs double heterostructure (DH) injection laser as shown in Fig. 1. Dual output waveguides are therefore provided at one of the mirrors. The coupled cavities resulting from this configuration tend to suppress all but one dominant longitudinal mode. By suitable variations of layer thickness and/or composition, the device operates either as a tapered power divider (TPD), branching the incident power of a single mode into the two output arms of the device, or as a tapered mode splitter (TMS), diverting different transverse modes into different arms. We have achieved power ratios of between 4:1 and 5:1 for the TPD, oscillating in a dominant longitudinal mode at λ ≈ 8850 Å. For the TMS, a transverse mode at λ ≈ 8780 Å exits from one output arm of the device, while another transverse mode at λ ≈ 8550 Å is observed from the other; the relative intensity of these two output beams can be varied by changing the injection current.","PeriodicalId":330440,"journal":{"name":"Integrated and Guided Wave Optics","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117044977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Electrooptic Analog-to-Digital Conversion using Channel Waveguide Modulators 使用通道波导调制器的电光模数转换
Integrated and Guided Wave Optics Pub Date : 1978-05-01 DOI: 10.1063/1.90129
H. Taylor, Meredith J. Taylor, P. W. Bauer
{"title":"Electrooptic Analog-to-Digital Conversion using Channel Waveguide Modulators","authors":"H. Taylor, Meredith J. Taylor, P. W. Bauer","doi":"10.1063/1.90129","DOIUrl":"https://doi.org/10.1063/1.90129","url":null,"abstract":"Analog-to-digital (A/D) converters are widely used to translate sensor measurements into the digital language of computing, information processing, and control systems. Some of these systems, such as signal processors for wideband radars, are limited in performance by the speed of present A/D converters. A new type of A/D converter based on electrooptic modulation of light in channel waveguides has been proposed1. This paper discusses the design of such a device and presents some experimental results on electrooptic A/D conversion.","PeriodicalId":330440,"journal":{"name":"Integrated and Guided Wave Optics","volume":"199 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132157417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 54
GaInAsP/InP Avalanche Photodiodes* GaInAsP/InP雪崩光电二极管*
Integrated and Guided Wave Optics Pub Date : 1978-04-15 DOI: 10.1063/1.90095
C. Hurwitz, J. Hsieh
{"title":"GaInAsP/InP Avalanche Photodiodes*","authors":"C. Hurwitz, J. Hsieh","doi":"10.1063/1.90095","DOIUrl":"https://doi.org/10.1063/1.90095","url":null,"abstract":"An avalanche photodiode with high quantum efficiency in the 1.0-1.3 μm wavelength range will be an important component of IOCs to be used in this low loss, low dispersion regime of optical fiber transmission. In this paper we report for the first time the successful fabrication of avalanche photodiodes in the quaternary alloy GaInAsP, grown epitaxially on InP substrates. Uniform gains of 12, a rise time of 200 psec and low-bias quantum efficiencies in excess of 40% have been measured at 1.15 μm.","PeriodicalId":330440,"journal":{"name":"Integrated and Guided Wave Optics","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124900509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 104
Buried Heterojunction Electroabsorption Modulator 埋藏异质结电吸收调制器
Integrated and Guided Wave Optics Pub Date : 1978-04-15 DOI: 10.1063/1.90089
J. Campbell, J. Dewinter, M. Pollack, R. Nahory
{"title":"Buried Heterojunction Electroabsorption Modulator","authors":"J. Campbell, J. Dewinter, M. Pollack, R. Nahory","doi":"10.1063/1.90089","DOIUrl":"https://doi.org/10.1063/1.90089","url":null,"abstract":"We report the successful operation of a semiconductor buried\u0000 heterojunction electroabsorption modulator. These modulators are good\u0000 candidates for integration with other devices because: (1) they do not\u0000 require additional optical elements (e.g. polarization analyzers) and\u0000 (2) they can be fabricated from the same semiconductor materials and\u0000 require the same processing techniques as the sources and detectors.\u0000 Electroabsorption modulators, which utilize the Franz-Keldish effect\u0000 to enhance absorption of light near the semiconductor bandgap, have\u0000 previously been fabricated only as planar structures, using\u0000 AℓyGa1−yAs or GaAs as the waveguiding material\u0000 for operating wavelengths near 0.9μm.1-3 The\u0000 present devices on the other hand are buried heterojunctions\u0000 fabricated from\u0000 AℓyGa1−yAs1−ySbx/GaAs1−x′Sbx′,\u0000 which by proper adjustment of the compositions can be tuned to operate\u0000 throughout the range 0.9μm to z1.2μm.4 The\u0000 buried heterojunction was chosen over planar configurations because\u0000 its two dimensional light confinement assures suitability for fiber\u0000 optic applications, while its small p-n junction area and low\u0000 capacitance permit operation at high frequencies.","PeriodicalId":330440,"journal":{"name":"Integrated and Guided Wave Optics","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122745549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信
小红书