2006 1st Electronic Systemintegration Technology Conference最新文献

{"title":"A fully Coupled Compact Self-Heating Model for a Thin SOI LIGBT with Packaging","authors":"S. Gamage, F. Udrea, Z. Ali, V. Pathirana","doi":"10.1109/ESTC.2006.280146","DOIUrl":"https://doi.org/10.1109/ESTC.2006.280146","url":null,"abstract":"The silicon on insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is a popular choice in smart integrated circuit (IC) applications. An isothermal model valid for both thin and thick SOI LIGBTs was recently reported by us. In this paper, the authors formulate the well known thin silicon thermal conductivity reduction to the device model and extend it to include the package thermal behaviour. In the process the thermally important layers of the packaging and their impact on the device, both on electrical and thermal behaviours are identified. The resulting compact, physics based, scalable, fully coupled self-heating model is verified through numerical simulations and experimental data","PeriodicalId":327892,"journal":{"name":"2006 1st Electronic Systemintegration Technology Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115530815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Full Wave Analysis and Electrical Modeling of Eight Copper Interconnects Placed in a Giga-Scale Integrated Environment for Signal Integrity Evaluation","authors":"F. Ponchel, J. Legier, E. Paleczny, C. Seguinot, D. Deschacht","doi":"10.1109/ESTC.2006.280095","DOIUrl":"https://doi.org/10.1109/ESTC.2006.280095","url":null,"abstract":"Signal integrity analysis on eight unintentionally coupled copper interconnects is derived from an equivalent distributed electrical multi-conductor cell. Compatible with SPICE environment, this elementary cell is calculated with a full wave analysis such as tangential vector finite element method and the transmission line theory. After R, L, C, G and mutual extraction, two types of excitation are implemented based on one aggressor and seven victims and vice versa in order to weigh the influence of parasitic mutual via crosstalk evaluation","PeriodicalId":327892,"journal":{"name":"2006 1st Electronic Systemintegration Technology Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130597901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Estimation of Data-Dependent Jitter Using Single Pulse Analysis Method in High-Speed Differential Signaling","authors":"Eakhwan Song, Junho Lee, Jingook Kim, D. Kam, Chunghyun Ryu, Joungho Kim","doi":"10.1109/ESTC.2006.280094","DOIUrl":"https://doi.org/10.1109/ESTC.2006.280094","url":null,"abstract":"Timing margin in high-speed data channel becomes tighter as bit rate goes higher. Timing jitter pares down the timing margin and makes it difficult to set timing budget for the receiver to distinguish digital binaries. Especially, the timing jitter that is correlated with the bit sequence in a data stream is called data-dependent jitter (DDJ). DDJ rises up with higher bit rate in dispersive lossy channel, therefore the issues about DDJ are rising up in recent high-speed serial interface design. In this work, a simple analysis method for the estimation of DDJ in high-speed differential signaling using single bit pulse response is proposed. A frequency dependent model of a transmission line is considered to characterize lossy properties of the differential channel, and the single bit pulse response is obtained with the model. The estimated DDJ in the differential signaling is experimentally verified with jitter measurements","PeriodicalId":327892,"journal":{"name":"2006 1st Electronic Systemintegration Technology Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132972035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Frequency Electrical Model of Through Wafer Via for 3-D Stacked Chip Packaging","authors":"Chunghyun Ryu, Jiwang Lee, Hyein Lee, Kwangyong Lee, Taesung Oh, Joungho Kim","doi":"10.1109/ESTC.2006.280001","DOIUrl":"https://doi.org/10.1109/ESTC.2006.280001","url":null,"abstract":"In this paper, we propose an equivalent circuit model of through wafer via which has height of 90 mum and diameter of 75 mum. The equivalent circuit model composed of RLCG components is developed based on the physical configuration of through wafer via. Then, the parameter values of the equivalent circuit model are fitted to the measured s-parameters up to 20GHz by parameter optimization method. The proposed model shows through wafer via is dominantly characterized by the capacitance of thin oxide around the via and resistive characteristic of lossy silicon substrate. From simulated TDR/TDT and eye-diagram waveforms of the proposed equivalent circuit model, it is found that parasitic effects of the via cause slow rising time of a signal during transmission of the signal to the through wafer via. However, unlike to the most cases, the slow rising time of through wafer via will not degrade signal integrity severely. At last, we show the effect of dimension of through wafer via on performance of signal transmission using 3D full wave simulation","PeriodicalId":327892,"journal":{"name":"2006 1st Electronic Systemintegration Technology Conference","volume":"192 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114396096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Epoxy/BaTiO3 (SrTiO3) Composite Films and Pastes For High Dielectric Constant and Low Tolerance Embedded Capacitors in Organic Substrates","authors":"K. Paik, Jin-Gul Hyun, Sangyong Lee, Kyung-Woon Jang","doi":"10.1109/ESTC.2006.280102","DOIUrl":"https://doi.org/10.1109/ESTC.2006.280102","url":null,"abstract":"Epoxy/BaTiO3 composite embedded capacitor films (ECFs) were newly designed for high dielectric constant and low tolerance (less than plusmn5%) embedded capacitor fabrication for organic substrates. In terms of material formulation, ECFs are composed of specially formulated epoxy resin and latent curing agent, and in terms of coating process, a comma roll coating method is used for uniform film thickness in large area. Dielectric properties of BaTiO3 (BT) & SrTiO3 (ST) composite ECF is measured MIM capacitors with oxygen plasma etched ECFs on 10times10 cm PCBs. For 1times1 mm capacitors with 12 um thickness and 50 vol.%BTO ECFs, dielectric constant of 39, dielectric loss of 0.017, capacitance density of 2.4 nF/cm2, and less than 10% tolerance were obtained. Dielectric constant of BTOECF is bigger than that of STECF, and it is due to difference of permittivity of BT and SrTiO3 particles. Dielectric constant of BT & ST ECF in high frequency range (0.5~10 GHz) is measured using a cavity resonance method. In order to estimate dielectric constants at high frequency, the reflection coefficient is measured with a network analyzer. Dielectric constant is calculated by observing the frequencies of the resonant cavity modes. Although there was no dielectric relaxation observed at pure epoxy, for BT ECF, there is the dielectric relaxation at 5~9GHz. It is mainly due to changing of polarization mode of BT powder itself. In contrast, there is no relaxation for ST ECF up to 10 GHz. Alternative material for embedded capacitor fabrication is epoxy/BT composite embedded capacitor pastes (ECPs). It uses similar materials formulation like ECFs and a screen printing method for film coating. The screen printing method has the advantage of forming capacitor partially in desired area. But the screen printing makes surface irregularity during mask peel-off. Surface flatness is significantly improved by adding some additives and by applying pressure during curing. As a result, dielectric layer with improved thickness uniformity is successfully demonstrated. For 4times4 mm capacitors with 11 um thickness and 50 vol.% BT ECFs, dielectric constant of 39, dielectric loss of 0.023, capacitance density of2.6nF/cm2, and 22% tolerance were obtained","PeriodicalId":327892,"journal":{"name":"2006 1st Electronic Systemintegration Technology Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122326288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On Approximation of Random Signals and their Usage in Electronic Packaging","authors":"I. Golet, H. Carstea, R. Negrea","doi":"10.1109/ESTC.2006.280063","DOIUrl":"https://doi.org/10.1109/ESTC.2006.280063","url":null,"abstract":"In the last time the study of random signals has became object of multidisciplinary researches. Random signals are used in solving a large class of problems. An important progress in the electronic packaging, telecommunications, in diagnosis systems is due to the study of high frequency random signals. By a random signal defined on a time set A with values in a Banach space X, we mean a family of random variables with values into a Banach space X indexed under a time parameter. But, the set of random variables can be endowed with a structure of probabilistic normed space. Moreover, a correspondence: a random signal to a function with values into probabilistic normed space is one to one and onto. In virtue to this correspondence we use probabilistic analysis to give methods for approximation of random signals, for describing types of periodicity and solving another problems in electronic packaging (Pecht et al., 1999) and measuring errors","PeriodicalId":327892,"journal":{"name":"2006 1st Electronic Systemintegration Technology Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114671902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Machine and Process Capability Analysis in SMT Manufacturing","authors":"R. Schmitt","doi":"10.1109/ESTC.2006.280113","DOIUrl":"https://doi.org/10.1109/ESTC.2006.280113","url":null,"abstract":"The strive towards increasing capacity, throughput on lead-free processes and accuracy with more and ever smaller components has changed the way of producing SMT boards. The need for statistical process control for each part of the process has become paramount in today's electronics manufacturing to keep up with market demand, ensure customer satisfaction and reduce defect rates","PeriodicalId":327892,"journal":{"name":"2006 1st Electronic Systemintegration Technology Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116987781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Study on the 0-Level Package Design of a High Accuracy Silicon MEMS Resonator","authors":"M. Gonzalez, A. Jourdain, I. De Vlaminck, B. Vandevelde, H. Tilmans","doi":"10.1109/ESTC.2006.280144","DOIUrl":"https://doi.org/10.1109/ESTC.2006.280144","url":null,"abstract":"Finite element analysis (FEA) is employed in this work to calculate the induced stresses in a double clamped silicon resonator and estimate the shift in frequency due to induced stresses during processing. From the modeling results, it was found that the induced stresses in the resonator are in the order of 1 to 6 MPa. A parametric analysis done on the FEM suggested that the sensitive factors affecting the resonance frequency of the resonator are: (a) the distance between the anchor of the beam resonator and the sealing ring, (b) the width of the sealing ring and (c) the materials used in the sealing ring. The analysis indicates that a narrow sealing ring will reduce the stresses in the resonator, however a compromise between hermeticity and low induced stress has to be kept. Another possibility to reduce the shift in resonance frequency is to place the sealing ring at an optimal distance from the anchor points of the resonator, counteracting the local deformation of the sealing ring and the global warpage of the package. A stress-decoupling gap is also proposed to isolate the resonator from the deformations of the sealing ring","PeriodicalId":327892,"journal":{"name":"2006 1st Electronic Systemintegration Technology Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121120591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel Aluminium/Copper Fibre-Reinforced Bonding Wires for Power Electronics","authors":"J. Dalin, A. Knauber, R. Reiter, V. Wesling, J. Wilde","doi":"10.1109/ESTC.2006.280175","DOIUrl":"https://doi.org/10.1109/ESTC.2006.280175","url":null,"abstract":"For power ICs bonding wires with a high thermo-mechanical fatigue resistance are requested by the mechatronic industry. One possible approach of improvement is the use of novel wires consisting of metal matrix composites. Materials like aluminium-copper-composites exhibit a larger strength than standard aluminium bonding wires. In the presented investigation fibre-reinforced bonding wires based on aluminium and copper have been realised by mechanical alloying, i.e. the use of extrusion, deformation and wire drawing. A soft aluminium matrix of the bonding wire is indispensable in order to bond power ICs without causing excessive stress in the chip, which may result in defects like cratering. The copper-fibres increase the strength of the wire. Furthermore, due to the filaments the electrical conductivity is increased and the thermal coefficient of expansion is decreased. Both phenomena have been confirmed by measurements and are expected to have a positive effect on the thermo-mechanical durability of wire-bonded connections. Bonding experiments and accelerated thermal fatigue stress tests have been performed with the fabricated bonding wires of typically 0.3 mm diameter. With these wires significantly higher bond shear strength could be observed in comparison to common aluminium bonding wires. Good reproducibility of the bonds regarding loop shape and wedge form was also fulfilled. After storage at high temperature the bond pull and shear forces for the Al/Cu wires remained at a significantly higher level in comparison to pure Al wires. Consequently, it has been shown that the strength of the joint between wire and substrate is increased using aluminium and copper-reinforced bonding wires and, therefore, the thermo-mechanical fatigue resistance of bonded interconnections for mechatronic power devices might be improved using these novel wires. A further approach is to add FeNi36 filaments together with copper. This alloy has a very low coefficient of thermal expansion and can further compensate the thermo-mechanical mismatch between substrate and bonding wire","PeriodicalId":327892,"journal":{"name":"2006 1st Electronic Systemintegration Technology Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121228019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Introduction of RoHS Legislation in SMD Thick-Film Hybrid Technology - a Case Study","authors":"D. Belavic, D. Rocak, J. Plut, M. Hrovat, J. Pavlič, Z. Drozd, S. Macek, I. Mcgill, K. Bukat","doi":"10.1109/ESTC.2006.280086","DOIUrl":"https://doi.org/10.1109/ESTC.2006.280086","url":null,"abstract":"In this paper a case study of the introduction of European environmental regulations on the restriction of the use of hazardous substances (RoHS) in thick-film hybrid technology is presented. The ecologically \"hazardous\" materials in conventional thick-film hybrid circuits can be found mainly in the solder for soldering SMD components and in the conventional thick-film materials. The substitution of ecologically \"hazardous\" materials with acceptable alternatives is possible with lead-free soldering technology and with the new, emerging thick-film pastes. But using the new materials and a modified manufacturing process require research and an assessment of the reliability of the new \"green\" hybrid circuits in comparison with the \"conventional\" ones. As a case study the authors designed a thick-film hybrid circuit that was produced using \"ecologically friendly\" as well as \"conventional\" materials. The circuits were aged under accelerated conditions, including temperature cycling and humidity testing. The measured functional characteristics of both sets of samples before and after ageing show that a humidity/temperature test at 93%RH/+40degC up to 1000 hours has no significant influence on the circuits' characteristics. On the other hand, failure rates after 1000 temperature cycles (-40/+125degC) are rather high - especially for some combinations of thick-film conductor materials and solders used for soldering discrete SMD electronic components","PeriodicalId":327892,"journal":{"name":"2006 1st Electronic Systemintegration Technology Conference","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123450769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}