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High-Frequency GaN Electronic Devices最新文献

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Introduction and Overview 简介与概述
High-Frequency GaN Electronic Devices Pub Date : 2019-08-01 DOI: 10.1007/978-3-030-20208-8_1
P. Fay, D. Jena, Paul Maki
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引用次数: 0
High Power High Frequency Transistors: A Material’s Perspective 大功率高频晶体管:材料的视角
High-Frequency GaN Electronic Devices Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-20208-8_2
R. Coffie
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引用次数: 10
Isotope Engineering of GaN for Boosting Transistor Speeds 用于提高晶体管速度的氮化镓同位素工程
High-Frequency GaN Electronic Devices Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-20208-8_3
J. Khurgin, D. Jena
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引用次数: 0
Linearity Aspects of High Power Amplification in GaN Transistors 氮化镓晶体管大功率放大的线性特性
High-Frequency GaN Electronic Devices Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-20208-8_4
S. Bader, K. Shinohara, A. Molnar
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引用次数: 3
Plasma-Wave Propagation in GaN and Its Applications 等离子体波在GaN中的传播及其应用
High-Frequency GaN Electronic Devices Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-20208-8_6
H. C. Quispe, B. Sensale‐Rodriguez, P. Fay
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引用次数: 0
Resonant Tunneling Transport in Polar III-Nitride Heterostructures 极性iii -氮化物异质结构的共振隧道输运
High-Frequency GaN Electronic Devices Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-20208-8_8
J. Encomendero, D. Jena, H. Xing
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引用次数: 6
Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes GaN/AlN谐振隧道二极管的制备与表征
High-Frequency GaN Electronic Devices Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-20208-8_9
W.-D. Zhang, T. A. Growden, E. Brown, P. R. Berger, D. Storm, D. Meyer
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引用次数: 1
Numerical Simulation of Distributed Electromagnetic and Plasma Wave Effect Devices 分布式电磁和等离子体波效应器件的数值模拟
High-Frequency GaN Electronic Devices Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-20208-8_7
S. Bhardwaj, J. Volakis
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引用次数: 1
Non-contact Metrology for mm-Wave and THz Electronics 毫米波和太赫兹电子器件的非接触计量
High-Frequency GaN Electronic Devices Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-20208-8_10
K. Sertel, G. Trichopoulos
{"title":"Non-contact Metrology for mm-Wave and THz Electronics","authors":"K. Sertel, G. Trichopoulos","doi":"10.1007/978-3-030-20208-8_10","DOIUrl":"https://doi.org/10.1007/978-3-030-20208-8_10","url":null,"abstract":"","PeriodicalId":322263,"journal":{"name":"High-Frequency GaN Electronic Devices","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116884365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA) 氮化隧道热电子传输放大器(THETA)
High-Frequency GaN Electronic Devices Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-20208-8_5
Zhichao Yang, D. Nath, Yuewei Zhang, S. Krishnamoorthy, J. Khurgin, S. Rajan
{"title":"III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA)","authors":"Zhichao Yang, D. Nath, Yuewei Zhang, S. Krishnamoorthy, J. Khurgin, S. Rajan","doi":"10.1007/978-3-030-20208-8_5","DOIUrl":"https://doi.org/10.1007/978-3-030-20208-8_5","url":null,"abstract":"","PeriodicalId":322263,"journal":{"name":"High-Frequency GaN Electronic Devices","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120983269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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