{"title":"氮化镓晶体管大功率放大的线性特性","authors":"S. Bader, K. Shinohara, A. Molnar","doi":"10.1007/978-3-030-20208-8_4","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":322263,"journal":{"name":"High-Frequency GaN Electronic Devices","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Linearity Aspects of High Power Amplification in GaN Transistors\",\"authors\":\"S. Bader, K. Shinohara, A. Molnar\",\"doi\":\"10.1007/978-3-030-20208-8_4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":322263,\"journal\":{\"name\":\"High-Frequency GaN Electronic Devices\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"High-Frequency GaN Electronic Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1007/978-3-030-20208-8_4\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"High-Frequency GaN Electronic Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1007/978-3-030-20208-8_4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}