High Frequency Postgraduate Student Colloquium, 2005最新文献

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Thermally self-consistent Monte Carlo simulation of InGaAs/AlGaAs HEMTs InGaAs/AlGaAs HEMTs热自洽蒙特卡罗模拟
High Frequency Postgraduate Student Colloquium, 2005 Pub Date : 2005-09-05 DOI: 10.1109/HFPSC.2005.1566358
T. Sadi, R. Kelsall, N. Pilgrim
{"title":"Thermally self-consistent Monte Carlo simulation of InGaAs/AlGaAs HEMTs","authors":"T. Sadi, R. Kelsall, N. Pilgrim","doi":"10.1109/HFPSC.2005.1566358","DOIUrl":"https://doi.org/10.1109/HFPSC.2005.1566358","url":null,"abstract":"This paper presents results from the application of a thermally self-consistent Monte Carlo (MC) simulator to In/sub 0.15/Ga/sub 0.85/As/Al/sub 0.28/Ga/sub 0.72/As HEMTs. The simulator employs an iterative procedure which couples a MC electronic trajectory simulation with a fast Fourier series solution of the heat diffusion equation (HDE). Monte Carlo is one of the most accurate methods for simulating sub-micron semiconductor devices, as it is free from low-field, near-equilibrium approximations. In addition, the microscopic description of electron-phonon scattering in this method provides an inherent prediction of the spatial distribution of heat generation within a device. The thermal power distribution calculated from the net rate of phonon emission is fed to an HDE solver. The resulting temperature distribution is incorporated into the subsequent MC iteration. Electronic transport is simulated using three-valley spherical non-parabolic energy bandstructures. The simulations consider both the effect of optical and acoustic phonons mediating intravalley and intervalley electronic transitions. Ionised impurity, alloy disorder and electron-electron scattering processes are also included. The expected thermal droop is observed from the I-V characteristics of the simulated devices. Temperature distributions associated with different thermal power distributions are shown to be non-uniform with maximum values dependent upon the bias and the semiconductor die dimensions.","PeriodicalId":312723,"journal":{"name":"High Frequency Postgraduate Student Colloquium, 2005","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128463134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Versatile finite element solver for gyrotropic phase shift and control components 陀螺仪移相和控制元件的通用有限元求解器
High Frequency Postgraduate Student Colloquium, 2005 Pub Date : 2005-09-05 DOI: 10.1109/HFPSC.2005.1566377
A. Abuelma'atti, A. Gibson
{"title":"Versatile finite element solver for gyrotropic phase shift and control components","authors":"A. Abuelma'atti, A. Gibson","doi":"10.1109/HFPSC.2005.1566377","DOIUrl":"https://doi.org/10.1109/HFPSC.2005.1566377","url":null,"abstract":"In a previous publication, a four transverse field formulation for a lossless Hermitical tensor material was introduced for an arbitrary directed bias field. Using the finite element method, the functional was implemented and then validated against various waveguide structures. In this paper the nonreciprocal properties of lossy, single/double, partial/full height vertical ferrite slab loaded waveguide are assessed in the microwave frequency band. The application of the solver is extended to investigate the nonreciprocal properties of a lossy double full height horizontal GaAs slab loaded waveguide in the millimeter wave frequency range. This solver and method has important implications for the study and design of future phase shift and control components used in sub-millimeter wave and terahertz systems.","PeriodicalId":312723,"journal":{"name":"High Frequency Postgraduate Student Colloquium, 2005","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130761804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A measurement test-set for characterisation of high power LDMOS transistors including memory effects 用于表征高功率LDMOS晶体管的测量测试集,包括记忆效应
High Frequency Postgraduate Student Colloquium, 2005 Pub Date : 2005-09-05 DOI: 10.1109/HFPSC.2005.1566354
A. Alghanim, J. Benedikt, P. Tasker
{"title":"A measurement test-set for characterisation of high power LDMOS transistors including memory effects","authors":"A. Alghanim, J. Benedikt, P. Tasker","doi":"10.1109/HFPSC.2005.1566354","DOIUrl":"https://doi.org/10.1109/HFPSC.2005.1566354","url":null,"abstract":"The paper presents a test-set enabling precise measurement of all signal components generated by a modulated stimulus, hence allowing for device characterisations relevant for communication systems. The presented test-set utilises two different types of coupler networks to detect the fundamental and harmonic signal components, and the IF signal components, respectively. Furthermore, the test-set is capable of handling power levels above 100 W making it applicable to devices relevant for the basestation market.","PeriodicalId":312723,"journal":{"name":"High Frequency Postgraduate Student Colloquium, 2005","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124221746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Compact 3D MMIC spiral baluns using multilayer CPW technology 采用多层CPW技术的紧凑型3D MMIC螺旋平衡器
High Frequency Postgraduate Student Colloquium, 2005 Pub Date : 2005-09-05 DOI: 10.1109/HFPSC.2005.1566370
Q. Sun, L. Krishnamurthy, V. T. Vo, A. Rezazadeh
{"title":"Compact 3D MMIC spiral baluns using multilayer CPW technology","authors":"Q. Sun, L. Krishnamurthy, V. T. Vo, A. Rezazadeh","doi":"10.1109/HFPSC.2005.1566370","DOIUrl":"https://doi.org/10.1109/HFPSC.2005.1566370","url":null,"abstract":"This paper describes the design, fabrication and characterization of a novel broadband monolithic passive spiral Marchand balun using the great flexibility of three-dimensional multilayer technology by The Electromagnetics Centre, The University of Manchester. As a measured result, the insertion loss better than -5 dB including the 3 dB power splitting loss over the 15 to 27 GHz bandwidth and the return loss better than -30 dB have been achieved at the perfectly matched frequency of 20 GHz. Amplitude and phase imbalance of 1 dB and 10 degrees, respectively, were achieved over the frequency band from 15 to 27 GHz. The balun occupies a small area as 0.26 mm/sup 2/.","PeriodicalId":312723,"journal":{"name":"High Frequency Postgraduate Student Colloquium, 2005","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122841620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Micromachined screen printing (MaSPrint) technology for RF MEMS applications 用于射频MEMS应用的微机械丝网印刷(MaSPrint)技术
High Frequency Postgraduate Student Colloquium, 2005 Pub Date : 2005-09-05 DOI: 10.1109/HFPSC.2005.1566347
S. Pranonsatit, S. Lucyszyn
{"title":"Micromachined screen printing (MaSPrint) technology for RF MEMS applications","authors":"S. Pranonsatit, S. Lucyszyn","doi":"10.1109/HFPSC.2005.1566347","DOIUrl":"https://doi.org/10.1109/HFPSC.2005.1566347","url":null,"abstract":"Traditional screen-printing technologies have long been used for manufacturing large volume RF circuits. While being an extremely low cost manufacturing solution, there have been relatively few major advancements. For this reason, the resulting thick-film components are generally restricted to microwave frequencies of operation, due to limitations in manufacturing tolerances. At the same time, surface micromachining technologies have undergone rapid developments, enabling high performance and innovative RF MEMS components to be realized. However, when compared to screen printing, this manufacturing technology is very expensive, even for mass production. This paper will introduce, for the first time, a revolutionary technology for implementing true RF MEMS components using screen printing. The basic concepts will be described, including the use of sacrificial layers and photoimageable pastes. This will be followed by results of the first experimental surface micromachined suspension bridges. Detailed discussions will be given on how the authors propose to overcome limitations with this technology. For example, techniques for compensating shrinkage and large grain boundary sizes with the pastes. Finally, a vision of where MaSPrint technology could lead will be given, in the form of design concepts for low loss transmission lines, RF MEMS switches and variable capacitors, for use in cheap high performance filters and phase shifters for both microwave and millimetre-wave applications.","PeriodicalId":312723,"journal":{"name":"High Frequency Postgraduate Student Colloquium, 2005","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123439019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Three-dimensional imaging with a terahertz quantum cascade laser 用太赫兹量子级联激光器进行三维成像
High Frequency Postgraduate Student Colloquium, 2005 Pub Date : 2005-09-05 DOI: 10.1109/HFPSC.2005.1566374
K. Lien Nguyen, Michael L. Johns, Lynn F. Gladden, C. Worrall, Paul Alexander, H. Beere, Michael Pepper, D. A. Ritchie, J. Alton, Stefano Barbieri, Edmund H. Linfield
{"title":"Three-dimensional imaging with a terahertz quantum cascade laser","authors":"K. Lien Nguyen, Michael L. Johns, Lynn F. Gladden, C. Worrall, Paul Alexander, H. Beere, Michael Pepper, D. A. Ritchie, J. Alton, Stefano Barbieri, Edmund H. Linfield","doi":"10.1109/HFPSC.2005.1566374","DOIUrl":"https://doi.org/10.1109/HFPSC.2005.1566374","url":null,"abstract":"Results are presented for the first imaging system that combines the high power of terahertz (THz) quantum cascade lasers (QCLs) with the three-dimensional image reconstruction capability of computed tomography (CT). The THz QCL used in this project is a GaAs-AlGaAs bound-to-continuum superlattice design, emitting at 2.9 THz (103 /spl mu/m), delivering 70 mW per facet peak power with a threshold current density of 112 A/cm/sup 2/. The reconstruction algorithm is based on the filtered back projection technique which has been widely used in X-ray CT. Images of phantoms made from polystyrene have been successfully reconstructed revealing both their external and internal structures with high contrast levels between different phases. Furthermore, the reconstructed images are shown to be in good quantitative agreement with the structure of the phantoms. We are currently implementing modifications to the experimental protocol and reconstruction algorithm in order to address the problems of reflection and refraction so as to extend our imaging capability to a wider range of materials.","PeriodicalId":312723,"journal":{"name":"High Frequency Postgraduate Student Colloquium, 2005","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125540023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 111
Using return ratios to design microwave oscillators 利用返回比设计微波振荡器
High Frequency Postgraduate Student Colloquium, 2005 Pub Date : 2005-09-05 DOI: 10.1109/HFPSC.2005.1566366
I. McGregor, D. Maclean, E. Wasige, I. Thayne
{"title":"Using return ratios to design microwave oscillators","authors":"I. McGregor, D. Maclean, E. Wasige, I. Thayne","doi":"10.1109/HFPSC.2005.1566366","DOIUrl":"https://doi.org/10.1109/HFPSC.2005.1566366","url":null,"abstract":"This paper describes how return ratios (RR) can be used to design microwave frequency oscillators with decreased start up time, improved spectral purity, and increased efficiency. Thus by using the new design method, an oscillator circuit is optimized for output power or start up time by designing for RR>1 at 180 deg phase shift whilst keeping the oscillator operating frequency constant.","PeriodicalId":312723,"journal":{"name":"High Frequency Postgraduate Student Colloquium, 2005","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133381562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Mutual impedance between bifilars of a quadrifilar helix antenna 四线螺旋天线双线之间的相互阻抗
High Frequency Postgraduate Student Colloquium, 2005 Pub Date : 2005-09-05 DOI: 10.1109/HFPSC.2005.1566364
M. Amin, R. Cahill
{"title":"Mutual impedance between bifilars of a quadrifilar helix antenna","authors":"M. Amin, R. Cahill","doi":"10.1109/HFPSC.2005.1566364","DOIUrl":"https://doi.org/10.1109/HFPSC.2005.1566364","url":null,"abstract":"In this paper we present the results of a study to quantify the mutual coupling between the two bifilars of a 1/2 turn 1/2 wavelength quadrifilar helix antenna (QHA). A new circuit model approach is used which is suitable for computing the impedance when the structure is fed by a single voltage source as in the case of a self phasing QHA. The validity of the circuit model is first confirmed by comparisons with simulated results obtained from the literature for various configurations of parallel fed dipoles.","PeriodicalId":312723,"journal":{"name":"High Frequency Postgraduate Student Colloquium, 2005","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123216629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Studies on passive intermodulation phenomena in printed and layered transmission lines 印刷和分层传输线无源互调现象的研究
High Frequency Postgraduate Student Colloquium, 2005 Pub Date : 2005-09-05 DOI: 10.1109/HFPSC.2005.1566348
A. Shitvov, D. Zelenchuk, A. Schuchinsky, V. Fusco
{"title":"Studies on passive intermodulation phenomena in printed and layered transmission lines","authors":"A. Shitvov, D. Zelenchuk, A. Schuchinsky, V. Fusco","doi":"10.1109/HFPSC.2005.1566348","DOIUrl":"https://doi.org/10.1109/HFPSC.2005.1566348","url":null,"abstract":"This paper reports on the recent developments into the investigation of passive intermodulation products (PIMs) in PCB based printed and layered transmission lines. Based on the results of earlier experiments, potential sources of PIM generation are examined, and a new semi-phenomenological model of PIM production mechanisms is discussed. The proposed model assumes non-local nature of PIM sources stochastically distributed along the path of high power microwave transmission. A consistent interpretation of the PIM measurements of printed circuits is proposed and further experiments are discussed.","PeriodicalId":312723,"journal":{"name":"High Frequency Postgraduate Student Colloquium, 2005","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127829239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Advanced multilayer thick-film technology for cost-effective millimetre-wave multi-chip modules 先进的多层厚膜技术,具有成本效益的毫米波多芯片模块
High Frequency Postgraduate Student Colloquium, 2005 Pub Date : 2005-09-05 DOI: 10.1109/HFPSC.2005.1566349
K. Samanta, I. Robertson
{"title":"Advanced multilayer thick-film technology for cost-effective millimetre-wave multi-chip modules","authors":"K. Samanta, I. Robertson","doi":"10.1109/HFPSC.2005.1566349","DOIUrl":"https://doi.org/10.1109/HFPSC.2005.1566349","url":null,"abstract":"This paper describes the novel application of photoimageable thick film technology for the realization of multilayer millimeter-wave multi-chip modules at a low cost. The dielectric material has been characterized first time up to 110 GHz with a novel technique. TFMS and CPW transmission lines have been characterized with a loss of 0.2 dB/mm and 0.3 dB/mm respectively at 80 GHz. High Q multilayer lumped components have been designed and modeled up to 40 GHz with excellent performance. A 3 GHz lumped element filter has remarkably low pass band loss of 0.3 dB with high stop band attenuation (>40 dB), and yet is highly miniaturized. Multilayer passive components have been designed and characterised up to 65 GHz and the performances are comparable to many reported results for thin film processes and even micro machined transmission lines.","PeriodicalId":312723,"journal":{"name":"High Frequency Postgraduate Student Colloquium, 2005","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128478425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
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