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Concurrent dual band hybrid power amplifier in 0.25μm GaN technology 0.25μm GaN技术并发双频混合功率放大器
2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Pub Date : 2017-03-30 DOI: 10.1109/WMCAS.2017.8070674
Urmila Nath, T. Quach, A. Mattamana, S. Dooley, W. Gouty, P. Watson, G. Subramanyam
{"title":"Concurrent dual band hybrid power amplifier in 0.25μm GaN technology","authors":"Urmila Nath, T. Quach, A. Mattamana, S. Dooley, W. Gouty, P. Watson, G. Subramanyam","doi":"10.1109/WMCAS.2017.8070674","DOIUrl":"https://doi.org/10.1109/WMCAS.2017.8070674","url":null,"abstract":"This paper reports a dual-band radio frequency (RF) high-efficiency power amplifier (PA) employing 0.25 μm gallium nitride (GaN) technology for multi-band transmitter applications. The hybrid PA simultaneously covers 2-distinct telemetry bands, L (1.435–1.85 GHz) and C (5–5.15 GHz). The concurrent PA has a simulated large signal gain of 12.5 dB, saturated output power (Pout) of 35.5 dBm, and power added efficiency (PAE) of 65% at Upper L-band with greater than 50% efficiency through the entire L Band. Similarly, the PA achieves large signal gain of 13.7 dB, Pout of 36.7 dBm, and PAE of 61 % at C-band.","PeriodicalId":307606,"journal":{"name":"2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"217 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114852712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A compact watt-level GaN-on-Si class AB power amplifier for handset applications 用于手机应用的紧凑瓦级GaN-on-Si类AB功率放大器
2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Pub Date : 2017-03-30 DOI: 10.1109/WMCAS.2017.8070682
M. R. Hasin, J. Kitchen
{"title":"A compact watt-level GaN-on-Si class AB power amplifier for handset applications","authors":"M. R. Hasin, J. Kitchen","doi":"10.1109/WMCAS.2017.8070682","DOIUrl":"https://doi.org/10.1109/WMCAS.2017.8070682","url":null,"abstract":"This paper presents a GaN-on-Si HEMT Class AB Power Amplifier (PA) delivering watt level power in the 870 MHz band with a power added efficiency (PAE) of 55.4% at 30dBm, and ACPR of −35.5dBc for a 3.84MHz WCDMA signal with 7.5dB PAPR. The PA achieves 45.2% fractional bandwidth, spanning from 600–950 MHz with more than 10dB gain. This PA was implemented using surface mount components that have values feasible for potential future integration into a single chip PA solution. Watt-level output power with high linearity makes this PA a useful component for handset transmitters operating in wideband modulation schemes with stringent linearity requirements.","PeriodicalId":307606,"journal":{"name":"2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128095694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On-body radiation of 3D-printed fold cylindrical helix (FCH) wearable antenna 3d打印折叠圆柱螺旋(FCH)可穿戴天线的体上辐射
2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Pub Date : 2017-03-30 DOI: 10.1109/WMCAS.2017.8070687
Dong Xue, B. Garner, Yang Li
{"title":"On-body radiation of 3D-printed fold cylindrical helix (FCH) wearable antenna","authors":"Dong Xue, B. Garner, Yang Li","doi":"10.1109/WMCAS.2017.8070687","DOIUrl":"https://doi.org/10.1109/WMCAS.2017.8070687","url":null,"abstract":"Low-profile, power-efficient antennas are required for body-worn devices applicable for long-term healthcare monitoring. The paper is focused on the fabrication of fold cylindrical helix (FCH) antennas, and measurement of their performance on the human body. The study considers one-element and two-element FCH arrays. It is found that the fabricated FCH antenna can excite the same on-body propagation within a compact size. The simulated two-element FCH array can achieve a higher gain and its on-body radiation performance is improved over the single FCH.","PeriodicalId":307606,"journal":{"name":"2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130513673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Geometries for creating a process seal insert for a standard waveguide-to-coax adapter 为标准波导-同轴适配器创建工艺密封插入件的几何形状
2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Pub Date : 2017-03-30 DOI: 10.1109/WMCAS.2017.8070684
Tanner Trapp, B. R. Jean
{"title":"Geometries for creating a process seal insert for a standard waveguide-to-coax adapter","authors":"Tanner Trapp, B. R. Jean","doi":"10.1109/WMCAS.2017.8070684","DOIUrl":"https://doi.org/10.1109/WMCAS.2017.8070684","url":null,"abstract":"Simulation results for several novel shapes of dielectric inserts that can serve as effective process seals for a standard WR-90 waveguide-to-coax adapter are presented. The objective of the design is to modify a standard adapter as a convenient wave launching structure for the measurement of fields in the interior regions of a complex machine. Modifying the geometry of the process seal insert has the benefits of not disturbing the waveguide cutoff characteristics, and increasing efficiency as compared to a total dielectric fill.","PeriodicalId":307606,"journal":{"name":"2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121052334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wideband GaAs MMIC driver power amplifiers for X and Ku bands 用于X和Ku波段的宽带GaAs MMIC驱动功率放大器
2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Pub Date : 2017-03-30 DOI: 10.1109/WMCAS.2017.8070690
Esmail Babakrpur, A. Medi, W. Namgoong
{"title":"Wideband GaAs MMIC driver power amplifiers for X and Ku bands","authors":"Esmail Babakrpur, A. Medi, W. Namgoong","doi":"10.1109/WMCAS.2017.8070690","DOIUrl":"https://doi.org/10.1109/WMCAS.2017.8070690","url":null,"abstract":"This paper presents two wideband GaAs MMIC driver power amplifiers (PAs) suitable for X and Ku bands. The required number of stages and number of branches in each stage for an M-stage driver PA architecture is analyzed. Design of wideband matching networks for monolithic microwave integrated circuit (MMIC) driver PAs is explained and design parameters of a cascaded K-section T matching network (MN) are derived. Finally, measurement results of 8–13 GHz and 13–19 GHz driver PAs, both implemented on 0.25 μm pseudomorphic high electron mobility transistor (pHEMT) technology, are demonstrated. Each driver PA delivers 31 dBm output power with 30 % nominal PAE over the operating frequency.","PeriodicalId":307606,"journal":{"name":"2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129641967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Square dielectric interconnect for chip-to-chip THz communication 用于芯片对芯片太赫兹通信的方形介电互连
2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Pub Date : 2017-03-30 DOI: 10.1109/WMCAS.2017.8070680
N. Aflakian, T. LaFave, R. Henderson, K. O, D. MacFarlane
{"title":"Square dielectric interconnect for chip-to-chip THz communication","authors":"N. Aflakian, T. LaFave, R. Henderson, K. O, D. MacFarlane","doi":"10.1109/WMCAS.2017.8070680","DOIUrl":"https://doi.org/10.1109/WMCAS.2017.8070680","url":null,"abstract":"A square holey cladding waveguide is designed and fabricated to support TE and TM polarizations for 180 GHz to 360 GHz chip-to-chip communication. The mode profile and normalized output power of the waveguide are simulated. A fabricated waveguide is tested using a vector network analyzer for mode mapping and loss measurements. The mode profile was mapped using a 250 μm pinhole stepped across the waveguide cross section. The waveguide loss is measured using a free space dielectric material characterization method. Here a taper with an aperture comparable to the core size was used. The taper provides easy alignment and higher coupling efficiency.","PeriodicalId":307606,"journal":{"name":"2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114772890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Tunable CPW-based transmission line for mm-wave applications 基于毫米波应用的可调谐cpw传输线
2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Pub Date : 2017-03-30 DOI: 10.1109/WMCAS.2017.8070681
A. Chen, R. Sreekumar, L. Melikian, S. Ardalan
{"title":"Tunable CPW-based transmission line for mm-wave applications","authors":"A. Chen, R. Sreekumar, L. Melikian, S. Ardalan","doi":"10.1109/WMCAS.2017.8070681","DOIUrl":"https://doi.org/10.1109/WMCAS.2017.8070681","url":null,"abstract":"This paper presents a coplanar waveguide (CPW) based tunable transmission line (TTL) for broadband operation in mm-wave band such as the 5G generation of communication systems. The design consists of a conventional CPW on the top aluminum layer with inductance and limited capacitance tuning mechanisms using MOS switches. The 3D electromagnetic (EM) simulation of a sample TTL of size 500×1000 μm indicate the design is capable of reaching inductive peaking with values of 4.93–7.57 nH in a frequency range of 40–60 GHz.","PeriodicalId":307606,"journal":{"name":"2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128032929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ka band 3D printed horn antennas Ka波段3D打印喇叭天线
2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Pub Date : 2017-03-30 DOI: 10.1109/WMCAS.2017.8070701
H. Yao, Shilpi Sharma, R. Henderson, S. Ashrafi, D. MacFarlane
{"title":"Ka band 3D printed horn antennas","authors":"H. Yao, Shilpi Sharma, R. Henderson, S. Ashrafi, D. MacFarlane","doi":"10.1109/WMCAS.2017.8070701","DOIUrl":"https://doi.org/10.1109/WMCAS.2017.8070701","url":null,"abstract":"This paper presents pyramidal horn antennas operating at 28 GHz, which are manufactured by 3D printing technology. A printed antenna based on a WR-28 waveguide standard gain horn designed for 20 dBi gain is then metalized using two different methods. Copper tape and conductive copper paint are applied to the 3D printed geometry surface. A full-wave electromagnetic simulator, HFSS, is used to design the horns and predict the gain. Through simulation, we observe that dielectric loss impacts the copper tape metallized structure. The measured input reflection coefficient for the 20 dBi horns is presented along with the simulated radiation pattern. The dielectric and metallic loss impact the overall radiation patterns of the antennas. Measured gain for an X band horn is compared with a reference.","PeriodicalId":307606,"journal":{"name":"2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115588707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
A high-efficiency 5G K/Ka-band stacked power amplifier in 45nm CMOS SOI process supporting 9Gb/s 64-QAM modulation with 22.4% average PAE 基于45nm CMOS SOI工艺的高效5G K/ ka波段堆叠功率放大器，支持9Gb/s 64-QAM调制，平均PAE为22.4%
2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Pub Date : 2017-03-30 DOI: 10.1109/WMCAS.2017.8070708
Chaojiang Li, Min Wang, T. Chi, Arvind Kumar, Myra Boenke, N. Cahoon, A. Bandyopadhyay, A. Joseph, Hua Wang
{"title":"A high-efficiency 5G K/Ka-band stacked power amplifier in 45nm CMOS SOI process supporting 9Gb/s 64-QAM modulation with 22.4% average PAE","authors":"Chaojiang Li, Min Wang, T. Chi, Arvind Kumar, Myra Boenke, N. Cahoon, A. Bandyopadhyay, A. Joseph, Hua Wang","doi":"10.1109/WMCAS.2017.8070708","DOIUrl":"https://doi.org/10.1109/WMCAS.2017.8070708","url":null,"abstract":"This paper presents a 3-FET stacked K/Ka-band class-AB power amplifier (PA) implemented in the GLOBALFOUNDRIES 45nm SOI process that is particularly optimized for future high-performance energy-efficient 5G mm-Wave transceiver front-ends. With a 2.9V power supply, the PA achieves 13.1dB power gain and a saturated output power (Psat) of 16.2dBm with a maximum power-added efficiency (PAE) of 41.5% at 24GHz continuous-wave (CW). The output 1dB compression point (P1dB) is 14.2dBm with 37.4% PAE. The Psat 1dB frequency range is 18GHz–29GHz. With a 9Gb/s 64-QAM modulated signal, 22.4% average PAE and −25.1dB EVM are achieved with 9.9dBm average output power. With a 960Mb/s 64-QAM signal, 22.5% average PAE, −29.6dB EVM, and −30.5dBc ACLR are achieved with 9.5dBm average output power. No digital pre-distortion is employed in both modulation tests. The total PA area is only 550μm × 750μm.","PeriodicalId":307606,"journal":{"name":"2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"180 1-2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132030505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
Broadband conductor-backed coplanar waveguide to double-sided parallel strip line transition at millimeter wave 宽频带共面波导在毫米波下向双面平行带状线过渡
2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Pub Date : 2017-03-01 DOI: 10.1109/WMCAS.2017.8070703
Lei Fang, R. Henderson
{"title":"Broadband conductor-backed coplanar waveguide to double-sided parallel strip line transition at millimeter wave","authors":"Lei Fang, R. Henderson","doi":"10.1109/WMCAS.2017.8070703","DOIUrl":"https://doi.org/10.1109/WMCAS.2017.8070703","url":null,"abstract":"This paper introduces a broadband conductor-backed coplanar waveguide (CBCPW) to double-sided parallel strip line (DSPSL) transition structure. The performance is demonstrated in a back-to-back (B2B) configuration on 0.127 mm thick FR408 with relative permittivity of 3.75 and loss tangent of 0.018. AWR AXIEM and ANSYS HFSS simulations have been used to optimize all the structures. Simulation and measurement results indicate the transition structure has a 10 dB bandwidth from 24 to 105 GHz. A single dipole and 12 — element array operating at 73 GHz are realized with this transition. The simulation and measurement results are in good agreement and demonstrate the application potential of this transition due to its simple structure and low cost features.","PeriodicalId":307606,"journal":{"name":"2017 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126463491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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