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2005 European Microwave Conference最新文献

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Microwave drying machine for textile materials 微波干燥机，用于纺织材料
2005 European Microwave Conference Pub Date : 2009-09-01 DOI: 10.1109/EUMC.2005.1610110
J. Vrba, M. Stejskal, R. Klepl, A. Richter, M. Pourová, O. Zak, J. Herza, L. Oppl
{"title":"Microwave drying machine for textile materials","authors":"J. Vrba, M. Stejskal, R. Klepl, A. Richter, M. Pourová, O. Zak, J. Herza, L. Oppl","doi":"10.1109/EUMC.2005.1610110","DOIUrl":"https://doi.org/10.1109/EUMC.2005.1610110","url":null,"abstract":"In this paper we describe our new results dealing with microwave industrial applicators used for drying of textile materials. We have designed and evaluated two different types of these applicators: open-resonator-type and waveguide-type one. We describe here basic models of the discussed applicators, results of numerical modelling and experimental evaluation as well. Prototype of microwave drying machine working at frequency 2.45 GHz is reported.","PeriodicalId":306792,"journal":{"name":"2005 European Microwave Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115373037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Measurement of the scattering-parameters of planar multi-port devices 平面多端口器件散射参数的测量
2005 European Microwave Conference Pub Date : 2007-06-13 DOI: 10.5194/ARS-5-439-2007
I. Rolfes, B. Schiek
{"title":"Measurement of the scattering-parameters of planar multi-port devices","authors":"I. Rolfes, B. Schiek","doi":"10.5194/ARS-5-439-2007","DOIUrl":"https://doi.org/10.5194/ARS-5-439-2007","url":null,"abstract":"The measurement of the scattering parameters of multi-port devices with the help of a vector network analyzer (VNA) with two measurement ports is described. Besides a calibration of the VNA system a further error correction procedure has to be performed in order to eliminate the systematic errors caused by external terminations which have to be connected to the ports of the device under test (DUT) during the measurement of the scattering parameters with a two-port VNA. The application of the multi-port method is presented. This correction method has the advantages that the needed external terminations can be chosen arbitrarily. Furthermore, these terminations can be unknown except for one. An automatized measurement setup on the basis of a switching network optimized for the characterization of planar microstrip devices with four ports is presented. An error model for the description and a calibration procedure for the elimination of the systematic errors are depicted.","PeriodicalId":306792,"journal":{"name":"2005 European Microwave Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114350602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
MEMS-switched parasitic-antenna array for radiation pattern diversity 用于辐射方向图分集的mems开关寄生天线阵列
2005 European Microwave Conference Pub Date : 2006-09-06 DOI: 10.1109/TAP.2006.880751
L. Petit, L. Dussopt, J. Laheurte
{"title":"MEMS-switched parasitic-antenna array for radiation pattern diversity","authors":"L. Petit, L. Dussopt, J. Laheurte","doi":"10.1109/TAP.2006.880751","DOIUrl":"https://doi.org/10.1109/TAP.2006.880751","url":null,"abstract":"This paper demonstrates a MEMS-switched parasitic antenna array at 5.6 GHz providing two radiation patterns with beams at /spl plusmn/25/spl deg/. The antenna is fabricated on a low-loss microwave substrate and uses packaged microelectromechanical (MEMS) series switches. The design and optimization procedure is presented as well as experimental results showing a good agreement.","PeriodicalId":306792,"journal":{"name":"2005 European Microwave Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121467491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 64
A novel LTCC miniaturized dualband balun 一种新型LTCC小型化双频平衡器
2005 European Microwave Conference Pub Date : 2006-03-06 DOI: 10.1109/EUMC.2005.1608910
Yong Guo, Zhen-Yu Zhang, L. C. Ong, M. Chia
{"title":"A novel LTCC miniaturized dualband balun","authors":"Yong Guo, Zhen-Yu Zhang, L. C. Ong, M. Chia","doi":"10.1109/EUMC.2005.1608910","DOIUrl":"https://doi.org/10.1109/EUMC.2005.1608910","url":null,"abstract":"In this paper, a novel LTCC miniaturized dualband balun using a tapered line structure has been presented. The key concept for our dualband solution is by employing tapered line structures in the conventional Marchand baluns. In our new design, we have demonstrated the tapered line structure can shift the periodic operation frequency to a desired frequency band. A sample balun design has been presented. The novel LTCC dualband balun has been simulated and verified by measurement. The measured results exhibit that the proposed balun can easily cover the important RF frequency band 2.4GHz, 5.25GHz and 5.85GHz.","PeriodicalId":306792,"journal":{"name":"2005 European Microwave Conference","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121084325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 38
Thermal design and analysis of output multiplexer for Ka-band satellite transponder ka波段卫星转发器输出复用器的热设计与分析
2005 European Microwave Conference Pub Date : 2005-12-01 DOI: 10.1109/EUMC.2005.1610156
C. Kwak, Juseop Lee, I. Yom
{"title":"Thermal design and analysis of output multiplexer for Ka-band satellite transponder","authors":"C. Kwak, Juseop Lee, I. Yom","doi":"10.1109/EUMC.2005.1610156","DOIUrl":"https://doi.org/10.1109/EUMC.2005.1610156","url":null,"abstract":"Heat transfer paths from irises, resonators, low path filters, and a manifold to the transponder panel are defined. Through comparison between results of \"thermal contact conductance model\" and \"one body model\", it has been confirmed that it is not necessary to consider the thermal contact resistances between parts assembled by bolts. And a quantitative evaluation of the effect of silver plating on temperature rise has been done. With assumptions of uniform heat dissipation within local regions and fixed temperature at the base plate, temperature distribution, heat flux density distribution, and self-heating are obtained. And it is shown that the median of the resonator's temperature rise distribution is identical to the average value. Finally it is shown that temperature distributions within resonators connected to a manifold is the same as those in resonators which stand independently.","PeriodicalId":306792,"journal":{"name":"2005 European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129559216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A K-band miniature, broadband, high output power HBT MMIC balanced doubler with integrated balun 一个k波段微型，宽带，高输出功率HBT MMIC平衡倍频器与集成的平衡
2005 European Microwave Conference Pub Date : 2005-12-01 DOI: 10.1109/EUMC.2005.1610253
Ching-Chih Weng, Zuo‐Min Tsai, Huei Wang
{"title":"A K-band miniature, broadband, high output power HBT MMIC balanced doubler with integrated balun","authors":"Ching-Chih Weng, Zuo‐Min Tsai, Huei Wang","doi":"10.1109/EUMC.2005.1610253","DOIUrl":"https://doi.org/10.1109/EUMC.2005.1610253","url":null,"abstract":"A K-band frequency doubler using InGaP HBT is developed, which features high fundamental frequency rejection, flat conversion loss over wide bandwidth, and high saturation output power. To obtain a balanced signal, a compact on-chip lumped rat-race hybrid is implemented. The circuit exhibits a measured conversion loss of 4 dB over the output frequencies from 14 to 22 GHz. The fundamental frequency suppression is better than 20 dB and the second harmonic saturation output power is higher than 7.3 dBm with a miniature chip size of 1 mm /spl times/ 1 mm.","PeriodicalId":306792,"journal":{"name":"2005 European Microwave Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126599117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Scalable compact models for embedded passives 嵌入式被动元件的可扩展紧凑模型
2005 European Microwave Conference Pub Date : 2005-12-01 DOI: 10.1109/EUMC.2005.1608874
Kok-Yan Lee, Saeed Mohammadi, Pallab K. Bhattacharya, L. Katehi
{"title":"Scalable compact models for embedded passives","authors":"Kok-Yan Lee, Saeed Mohammadi, Pallab K. Bhattacharya, L. Katehi","doi":"10.1109/EUMC.2005.1608874","DOIUrl":"https://doi.org/10.1109/EUMC.2005.1608874","url":null,"abstract":"This paper presents a new comprehensive methodology for the development of scalable models for embedded passives. These models are derived from fundamental lossy transmission line theory. Using Taylor's series and continued fractions approximation, very accurate second and third order intrinsic capacitor and inductor models have been demonstrated. With the second order model, we are able to match the measured response up to the first resonance frequency. With the third order models, we are able to match the measured response beyond the first resonance frequency. The wideband accuracy provided by the third or higher order intrinsic models are necessary in transient and harmonic frequency analysis. The parameter extraction does not require any optimization and is accurate and unambiguous. The third order continued fractions model, introduced in this paper, matches the frequency dependent non-linear effects observed in the passives without a need for frequency dependent elements.","PeriodicalId":306792,"journal":{"name":"2005 European Microwave Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129630899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Development of high efficiency rectification circuit for mW-class rectenna 兆瓦级整流高效率整流电路的研制
2005 European Microwave Conference Pub Date : 2005-12-01 DOI: 10.1109/EUMC.2005.1610187
K. Fujimori, K. Tada, Y. Ueda, M. Sanagi, S. Nogi
{"title":"Development of high efficiency rectification circuit for mW-class rectenna","authors":"K. Fujimori, K. Tada, Y. Ueda, M. Sanagi, S. Nogi","doi":"10.1109/EUMC.2005.1610187","DOIUrl":"https://doi.org/10.1109/EUMC.2005.1610187","url":null,"abstract":"For applications of the microwave power transmission technology, it is necessary to realize high efficiency rectennas or rectification circuits. Especially, RF-ID's or ubiquitous power sources demand high RF-DC conversion efficiency for below mW microwave inputs. However, almost all past rectennas or rectification circuits were designed for over 100mW rectifying and the RF-DC conversion efficiencies were less than 20% at 1mW microwave input. In this paper, we investigate rectification circuits for developing mW-class rectennas. Discussing diode mount structures in order to increase the efficiency below 10mW microwave input, we succeeded in developing a rectification circuit whose efficiency is 62.8% for a 10mW microwave input. We also find that approximately 30% of the input microwave power is consumed by the diode in the rectification circuit.","PeriodicalId":306792,"journal":{"name":"2005 European Microwave Conference","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124362579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Characterization of low-temperature Ultrananocrystalline/spl trade/ Diamond RF MEMS resonators 低温超晶/spl贸易/金刚石射频MEMS谐振器的表征
2005 European Microwave Conference Pub Date : 2005-12-01 DOI: 10.1109/EUMC.2005.1610241
S. Pacheco, P. Zurcher, S. Young, D. Weston, W. Dauksher, O. Auciello, J. Carlisle, N. Kane, J. Birrell
{"title":"Characterization of low-temperature Ultrananocrystalline/spl trade/ Diamond RF MEMS resonators","authors":"S. Pacheco, P. Zurcher, S. Young, D. Weston, W. Dauksher, O. Auciello, J. Carlisle, N. Kane, J. Birrell","doi":"10.1109/EUMC.2005.1610241","DOIUrl":"https://doi.org/10.1109/EUMC.2005.1610241","url":null,"abstract":"For the first time working MEMS resonators have been produced using low-temperature deposited (550/spl deg/ C) Ultrananocrystalline/spl trade/ Diamond (UNCD/spl trade/) films. Using a lumped-element model to fit experimental data, UNCD materials properties such as a Young's modulus of 710 GPa and an acoustic velocity of 14,243 m/s have been deduced. This is the highest acoustic velocity measured to date for a diamond MEMS structural layer deposited at low temperatures. A 10 MHz resonator shows a DC-tunability of the resonance frequency of 15% between 15 and 25 V and the breakdown voltage behavior shows electrostatic breakdown rather than electro-mechanical pull-down for higher frequency devices. Good resonant frequency reproducibility is observed when cycling the resonators over bias voltages from 15 to 25 V and over RF power levels of -10 to 10 dBm.","PeriodicalId":306792,"journal":{"name":"2005 European Microwave Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115548972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Ka-band direct transmitter modules for baseband pre-compensation 用于基带预补偿的ka波段直接发射机模块
2005 European Microwave Conference Pub Date : 2005-12-01 DOI: 10.1109/EUMC.2005.1608946
D. Drolet, A. Panther, C. J. Verver, K. Kautio, Y. Lai
{"title":"Ka-band direct transmitter modules for baseband pre-compensation","authors":"D. Drolet, A. Panther, C. J. Verver, K. Kautio, Y. Lai","doi":"10.1109/EUMC.2005.1608946","DOIUrl":"https://doi.org/10.1109/EUMC.2005.1608946","url":null,"abstract":"This paper presents two different RF modules for implementation in a Ka-band direct transmitter architecture with feedback for baseband I/Q pre-compensation. The first module is realized using conventional MIC technology, and combines a direct Ka-band SSB modulator, a driver amplifier, a microstrip directional coupler, and a detector circuit in the feedback loop. A maximum conversion gain of +9.6dB is measured at 29GHz. The second module was fabricated using LTCC technology to provide similar functionality in a more compact package. Measured conversion gain for this unit reaches a maximum of +6.1dB at 29GHz. With pre-compensation, suppression levels of at least 40dB for the carrier, and 30dB for the image sideband, have been achieved for both modules.","PeriodicalId":306792,"journal":{"name":"2005 European Microwave Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115017108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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