2001 Siberian Russian Student Workshop on Electron Devices and Materials. Proceedings 2nd Annual (IEEE Cat. No.01EX469)最新文献

Deposition regularity and some properties of silicon dioxide films from monosilane oxidation 单硅烷氧化二氧化硅膜的沉积规律及一些性能

2001 Siberian Russian Student Workshop on Electron Devices and Materials. Proceedings 2nd Annual (IEEE Cat. No.01EX469) Pub Date : 2001-07-03 DOI: 10.1109/SREDM.2001.939164

L. A. Semenova, S.F. Devjatova, V.G. Erkov

引用次数: 0

The analysis of color coordinates systems characteristics 色彩坐标系统特性分析

2001 Siberian Russian Student Workshop on Electron Devices and Materials. Proceedings 2nd Annual (IEEE Cat. No.01EX469) Pub Date : 2001-07-03 DOI: 10.1109/SREDM.2001.939171

V. V. Nekrasov, S. P. Novitskiy

引用次数: 1

Dual precision operational amplifier with zero adjustment 具有调零的双精度运算放大器

2001 Siberian Russian Student Workshop on Electron Devices and Materials. Proceedings 2nd Annual (IEEE Cat. No.01EX469) Pub Date : 2001-07-03 DOI: 10.1109/SREDM.2001.939159

N. Shmakov

引用次数: 2

Polarization anisotropy of photoluminescence in corrugated and flat GaAs/AlAs short-period superlattices 波纹和扁平GaAs/AlAs短周期超晶格光致发光的极化各向异性

2001 Siberian Russian Student Workshop on Electron Devices and Materials. Proceedings 2nd Annual (IEEE Cat. No.01EX469) Pub Date : 2001-07-03 DOI: 10.1109/SREDM.2001.939132

G. Lyubas, V. V. Bolotov

{"title":"Polarization anisotropy of photoluminescence in corrugated and flat GaAs/AlAs short-period superlattices","authors":"G. Lyubas, V. V. Bolotov","doi":"10.1109/SREDM.2001.939132","DOIUrl":"https://doi.org/10.1109/SREDM.2001.939132","url":null,"abstract":"The flat and corrugated GaAs/AlAs short-period superlattices were studied using photoluminescence spectroscopy in a wide temperature range. The phenomenon of photoluminescence polarization anisotropy was observed. The polarization nature is explained by valence band anisotropy in the case of (311 )A corrugated superlattices with a GaAs layer thickness of more than 35 /spl Aring/. For a thickness of less than 35 /spl Aring/, the polarization anisotropy is explained by both valence band anisotropy and anisotropy associated with interface corrugation. It was determined that the superlattices grown on faceted (311)A GaAs substrates contain periodic corrugated GaAs and AlAs layers. The period of corrugation is 32 /spl Aring/ along the [01-1] direction, the height of corrugation is 10.2 /spl Aring/. A blueshift and a redshift of the /spl Gamma/ electron-/spl Gamma/ heavy hole transition were observed. It was found that a blueshift (redshift) should be observed in GaAs/AlAs superlattices when the GaAs layer thickness is smaller (larger) than /spl sim/36 /spl Aring/. The photoluminescence peak position observed for the (311)A GaAs/AlAs superlattices with corrugation was shifted to higher energy region and the photoluminescence intensity was an order of magnitude higher than for the (311)A superlattices without corrugation with the same average thickness of GaAs layers. These results are important for development of CSL-based devices (such as lasers, light-emitting diodes, photo-detectors, etc.) operating in a wide temperature range.","PeriodicalId":304276,"journal":{"name":"2001 Siberian Russian Student Workshop on Electron Devices and Materials. Proceedings 2nd Annual (IEEE Cat. No.01EX469)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126617985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Diagnostic application of superconductive magnetocardiograph and continuous wavelet transform for early detecting heart diseases 超导心磁仪与连续小波变换在心脏病早期诊断中的应用

2001 Siberian Russian Student Workshop on Electron Devices and Materials. Proceedings 2nd Annual (IEEE Cat. No.01EX469) Pub Date : 2001-07-03 DOI: 10.1109/SREDM.2001.939149

V.S. Poudov

引用次数: 3

Design and analysis of resolution improvement by interframe processing algorithm 帧间处理算法提高分辨率的设计与分析

2001 Siberian Russian Student Workshop on Electron Devices and Materials. Proceedings 2nd Annual (IEEE Cat. No.01EX469) Pub Date : 2001-07-03 DOI: 10.1109/SREDM.2001.939182

V. Nikitin, I. S. Gruzman

引用次数: 0

Simulation of a flat electron beam in cross fields 平面电子束在交叉场中的模拟

2001 Siberian Russian Student Workshop on Electron Devices and Materials. Proceedings 2nd Annual (IEEE Cat. No.01EX469) Pub Date : 2001-07-03 DOI: 10.1109/SREDM.2001.939139

R.A. Yevdokimov

引用次数: 0

Study of frequency- spectral methods of modern technology optimization 现代技术优化的频谱方法研究

2001 Siberian Russian Student Workshop on Electron Devices and Materials. Proceedings 2nd Annual (IEEE Cat. No.01EX469) Pub Date : 2001-07-03 DOI: 10.1109/SREDM.2001.939145

V. M. Geller, S. N. Gorban, V. Khrustalev, S. Chipumov

引用次数: 0

Compensation algorithm of polynomial geometric distortions of images 多项式图像几何畸变补偿算法

2001 Siberian Russian Student Workshop on Electron Devices and Materials. Proceedings 2nd Annual (IEEE Cat. No.01EX469) Pub Date : 2001-07-03 DOI: 10.1109/SREDM.2001.939176

S.S. Goncharov, I. S. Gruzman

引用次数: 0

Design of powerful broadband transistorized amplifiers 大功率宽带晶体管放大器的设计

2001 Siberian Russian Student Workshop on Electron Devices and Materials. Proceedings 2nd Annual (IEEE Cat. No.01EX469) Pub Date : 2001-07-03 DOI: 10.1109/SREDM.2001.939156

A. V. Kolotvin, A.V. Pisanko, V.V. Maneev

引用次数: 0