发布求助
文献互助 智能选刊 最新文献

2nd International Symposium on Plasma Process-Induced Damage最新文献

筛选
英文 中文
A Strategy To Detect Charge Damaging Process Steps Within A Multilayer Metallization Technology 多层金属化技术中电荷损伤过程步骤的检测策略
2nd International Symposium on Plasma Process-Induced Damage Pub Date : 1997-05-13 DOI: 10.1109/PPID.1997.596710
M. Polzl, M. Stecher
{"title":"A Strategy To Detect Charge Damaging Process Steps Within A Multilayer Metallization Technology","authors":"M. Polzl, M. Stecher","doi":"10.1109/PPID.1997.596710","DOIUrl":"https://doi.org/10.1109/PPID.1997.596710","url":null,"abstract":"Even in the area of smart power ICs it becomes more and more vital to detect plasma damaging process steps. Since plasma processes are quite expensive they are optimized respective machine throughput. Of course, this might affect the gate oxide quality. Furthermore, combining power and intelligent control tasks on one chip goes along with thinner gate oxide, which becomes more susceptible to plasma damage. Therefore, to speed up the ramp-up of new technologies it is necessary to detect plasma damage during the technology developement. This task is aggravated by the fact that during developement only a small number of wafers are processed. So it is necessary to have a strategy to detect plasma damage in an efficient way. Our strategy is based on damage sensors and efficient and reliable measurement techniques for evaluating these sensors. Of course, the more sensitive the detecting structures and the measurements, the smaller the number of wafers required.","PeriodicalId":301422,"journal":{"name":"2nd International Symposium on Plasma Process-Induced Damage","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125899471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comparison Of Techniques For Gate Oxide Damage Measurements 栅极氧化物损伤测量技术的比较
2nd International Symposium on Plasma Process-Induced Damage Pub Date : 1997-05-13 DOI: 10.1109/PPID.1997.596741
J. Educato, C. Gabriel
{"title":"Comparison Of Techniques For Gate Oxide Damage Measurements","authors":"J. Educato, C. Gabriel","doi":"10.1109/PPID.1997.596741","DOIUrl":"https://doi.org/10.1109/PPID.1997.596741","url":null,"abstract":"A comparison of oxide charging damage measurements is made. Gate leakage, threshold voltage and total charge-tobreakdown techniques are described in detail including measurement issues and results. Each technique is proven to be valuable in exposing latent oxide damage. Deeper understanding of the trapping nature of the oxide is achieved. Correlations between each technique are made.","PeriodicalId":301422,"journal":{"name":"2nd International Symposium on Plasma Process-Induced Damage","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126170743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Assessing Processing Induced Darnage Using Cyclic I-V Analysis 利用循环I-V分析法评估加工诱发损伤
2nd International Symposium on Plasma Process-Induced Damage Pub Date : 1997-05-13 DOI: 10.1109/PPID.1997.596708
M. Okandan, M. Merritt, S. Fonash
{"title":"Assessing Processing Induced Darnage Using Cyclic I-V Analysis","authors":"M. Okandan, M. Merritt, S. Fonash","doi":"10.1109/PPID.1997.596708","DOIUrl":"https://doi.org/10.1109/PPID.1997.596708","url":null,"abstract":"","PeriodicalId":301422,"journal":{"name":"2nd International Symposium on Plasma Process-Induced Damage","volume":"39 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123286384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural Effects On Charging Damage 结构对充能伤害的影响
2nd International Symposium on Plasma Process-Induced Damage Pub Date : 1997-05-13 DOI: 10.1109/PPID.1997.596720
Y. Muraki, S. Hosoda
{"title":"Structural Effects On Charging Damage","authors":"Y. Muraki, S. Hosoda","doi":"10.1109/PPID.1997.596720","DOIUrl":"https://doi.org/10.1109/PPID.1997.596720","url":null,"abstract":"Structural effects on charging damage such as antenna ratio, gate oxide area(active area ), peripheral length, and pattem density were investigated using specially designed antenna MOS wafers. In order to put charging stress to the antenna MOSs, these wafers were treated with ion implantation or plasma dry etch. Failures due to the charging damage were measured and the results showed the different tendency of charging damage between ion implantation and plasma dry etch.","PeriodicalId":301422,"journal":{"name":"2nd International Symposium on Plasma Process-Induced Damage","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123325112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Correlation Of Nitride Spacer Plasma Damage Results From Conventional Gate Capacitor Electrical Tests And A New, Non-contact Approach 传统栅极电容电性测试与一种新的非接触方法的氮化间隔器等离子体损伤结果的相关性
2nd International Symposium on Plasma Process-Induced Damage Pub Date : 1997-05-13 DOI: 10.1109/PPID.1997.596719
M. Goss, A. Findlay
{"title":"Correlation Of Nitride Spacer Plasma Damage Results From Conventional Gate Capacitor Electrical Tests And A New, Non-contact Approach","authors":"M. Goss, A. Findlay","doi":"10.1109/PPID.1997.596719","DOIUrl":"https://doi.org/10.1109/PPID.1997.596719","url":null,"abstract":"For gate oxide thickness of 60A or less, plasma-induced charging during the nitride spacer etch becomes a concem. These thin oxides can become damaged through the collection of charge by polysilicon conducting layers, leading to degraded breakdown characteristics and reduced reliability.( 1,2) In addition, it has been shown that plasma damage can lead to hot carrier-induced failure of pMOSFETs.(3) Since the amount of plasma induced charging is related to plasma nonuniformity, it is effected by etch process variables such as pressure, DC Bias voltage and the presence of a magnetic field. In some cases, process condtions that achieve the highest nitride to oxide etch rate selectivity (and are most resistant to oxide punchthru), also lead to the greatest amount of plasma damage. In this paper, we will discuss experiments that examine the nitride spacer etch and the amount of gate oxide damage caused by this process. The measurement techniques that were used to quantify the amount of plasma damage were the electrical testing of large area, gate capacitor structures and the SDI Plasma Damage Monitor (PDM) tool. The SDI PDM tool measures the surface charge on blanket oxide monitor wafers that are exposed to plasma processing. A correlation was then made between the amount of surface charge and the results of gate capacitor tests made on full electrical lots.","PeriodicalId":301422,"journal":{"name":"2nd International Symposium on Plasma Process-Induced Damage","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114933732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Plasma Charging Damage On Ultra-thin Gate Oxides 超薄栅极氧化物的等离子体充电损伤
2nd International Symposium on Plasma Process-Induced Damage Pub Date : 1997-05-13 DOI: 10.1109/PPID.1997.596670
Donggun Park, C. Hu
{"title":"Plasma Charging Damage On Ultra-thin Gate Oxides","authors":"Donggun Park, C. Hu","doi":"10.1109/PPID.1997.596670","DOIUrl":"https://doi.org/10.1109/PPID.1997.596670","url":null,"abstract":"Capacitor and threshold voltage and sub- threshold swing of MOSFET's with gate oxide thickness varying from 2.2 to 7.7 nm are analyzed to study the plasma charging damage by the metal etching process. Surprisingly, the ultrathin gate oxide has better immunity to plasma charging damage than the thicker oxide, thanks to the excellent tolerance of the thin gate oxide to tunneling current. This finding has very positive implications for the prospect of manufacturable scaling of gate oxide to very thin thickness.","PeriodicalId":301422,"journal":{"name":"2nd International Symposium on Plasma Process-Induced Damage","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133705635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Degradation Of Silicon Dioxide Film Under High Electric Field Stress 高电场应力下二氧化硅薄膜的降解
2nd International Symposium on Plasma Process-Induced Damage Pub Date : 1997-05-13 DOI: 10.1109/PPID.1997.596760
K. Yamabe
{"title":"Degradation Of Silicon Dioxide Film Under High Electric Field Stress","authors":"K. Yamabe","doi":"10.1109/PPID.1997.596760","DOIUrl":"https://doi.org/10.1109/PPID.1997.596760","url":null,"abstract":"Var ious degradat ion phenomena o f o x i d e under h igh e l e c t r i c f i e l d a r e summarized as a n exper imen ta l l y s i m u l a t i o n o f charging-up damage. The charge t rapp ing and bo th B mode and f a t i g u e breakdowns become more favo rab le as the ox ide th i ckness decreases. However, t he s t r e s s induced leakage c u r r e n t becomes more un favorab le w i t h dtrcreasing t h e ox ide thickness. Reduction o f QBO b y charging-up cannot be recovered b y t h e thermal anneal ing, even i f t h e annea l ing temperature i s a t 1 OOO'C. I t i s a reason why h i g h tempera ture annea l ing makes 4s~ o f t h e","PeriodicalId":301422,"journal":{"name":"2nd International Symposium on Plasma Process-Induced Damage","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114831264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Correlation Between Electron Temperature Uniformity And Charging Damage In High Density Plasma Etching Tool 高密度等离子体刻蚀工具中电子温度均匀性与充电损伤的关系
2nd International Symposium on Plasma Process-Induced Damage Pub Date : 1997-05-13 DOI: 10.1109/PPID.1997.596746
K. Tokashiki, K. Noguchi, H. Miyamoto, T. Horiuchi
{"title":"Correlation Between Electron Temperature Uniformity And Charging Damage In High Density Plasma Etching Tool","authors":"K. Tokashiki, K. Noguchi, H. Miyamoto, T. Horiuchi","doi":"10.1109/PPID.1997.596746","DOIUrl":"https://doi.org/10.1109/PPID.1997.596746","url":null,"abstract":"We investigated the correlation between the charging damage and the plasma parameter’s uniformity in high density plasma etching tool. The spatially uniform ion current density (or plasma density) and plasma potential, which have been commonly used as an index of plasma uniformity, does not always guarantee charging damage-less plasma. We demonstrate that a uniform electron temperature distribution is one of the most important parameters to suppress the charging damage, as well as uniform plasma potentials and rf voltages distribution across the wafer.","PeriodicalId":301422,"journal":{"name":"2nd International Symposium on Plasma Process-Induced Damage","volume":"215 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114388145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Study Of Pattern Dependent Charging In A High-density, Inductively Coupled Metal Etcher 高密度电感耦合金属蚀刻机中模式相关充电的研究
2nd International Symposium on Plasma Process-Induced Damage Pub Date : 1997-05-13 DOI: 10.1109/PPID.1997.596691
R. Patrick, P. Jones, W. Lukaszek, J. Shields, A. Birrell
{"title":"Study Of Pattern Dependent Charging In A High-density, Inductively Coupled Metal Etcher","authors":"R. Patrick, P. Jones, W. Lukaszek, J. Shields, A. Birrell","doi":"10.1109/PPID.1997.596691","DOIUrl":"https://doi.org/10.1109/PPID.1997.596691","url":null,"abstract":"It is becoming increasingly evident that pattern dependent charging or electron shading is a significant charging mechanism for high density plasma etch systems. This mechanism, described by Hashimoto , can occur in uniform plasmas and is caused by the difference in isotropy of electrons and ions crossing the plasma sheath to the wafer surface. As electrons and ions interact differently with closely spaced structures on the surface of the wafer this leads to a differential charging of the structure with the top charging more negatively than the bottom. In this paper the voltages and currents developed by electron shading at the wafer surface are measured directly using a modified CHARM wafer.","PeriodicalId":301422,"journal":{"name":"2nd International Symposium on Plasma Process-Induced Damage","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117197521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Process Induced Charging Damage In Thin Gate Oxides 薄栅极氧化物的工艺诱导充电损伤
2nd International Symposium on Plasma Process-Induced Damage Pub Date : 1997-05-13 DOI: 10.1109/PPID.1997.596672
G. Bersuker, J. Werking, Sang U. Kim
{"title":"Process Induced Charging Damage In Thin Gate Oxides","authors":"G. Bersuker, J. Werking, Sang U. Kim","doi":"10.1109/PPID.1997.596672","DOIUrl":"https://doi.org/10.1109/PPID.1997.596672","url":null,"abstract":"","PeriodicalId":301422,"journal":{"name":"2nd International Symposium on Plasma Process-Induced Damage","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125658314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信
小红书