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Advanced Optoelectronics and Lasers最新文献

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Transmission peculiarities of dielectric layer/thin metallic film/dielectric layer structure, with or without periodicity in the dielectric layers 介电层/金属薄膜/介电层结构的传输特性，在介电层中有无周期性
Advanced Optoelectronics and Lasers Pub Date : 2008-03-03 DOI: 10.1117/12.793384
V. Fitio, Y. Bobitski
{"title":"Transmission peculiarities of dielectric layer/thin metallic film/dielectric layer structure, with or without periodicity in the dielectric layers","authors":"V. Fitio, Y. Bobitski","doi":"10.1117/12.793384","DOIUrl":"https://doi.org/10.1117/12.793384","url":null,"abstract":"The transmission characteristics of the dielectric grating - thin metal film - dielectric grating structure have been analyzed by the coupled wave method (CWM). The analysis is conducted for waves of TE and TM polarizations. The qualitative transmission characters are similar for two polarizations, but are different quantitatively. The reflectance of such structure can be higher than 0.85 on wavelength of 1.5μm at certain parameters for a silver film with thickness of 0.0385μm. The reflectance on the wavelength of the maximum transmission is actually equal to zero. The only thin film without gratings on the same wavelength has the transmittance of 0.004 and reflectance of 0.984. The system, which consists of grating from metal included between homogeneous dielectrics, also possesses by anomalous high transmission. At that the transmission is substantially higher than a ratio of a metal-free space to the grating period. Similar dependences can be obtained for a structure, in which the thin film of metal is located between two layers of dielectric with high refraction index. At certain conditions the reflection is less than 0.0002 and transmission is more than 0.87 for the metal thickness of 0.0385 μm. The rule is found, which is enable to find approximately the parameters for these high transmission structures. This effect is explained by the coupled wave resonance with forming of a wave node within the thin metal film that minimizes absorption.","PeriodicalId":300417,"journal":{"name":"Advanced Optoelectronics and Lasers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128459433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonlinear simulation of ultrastable quartz crystal oscillators in frequency domain 超稳石英晶体振荡器的频域非线性仿真
Advanced Optoelectronics and Lasers Pub Date : 2008-03-03 DOI: 10.1117/12.793882
N. Ratier, M. Bruniaux, R. Brendel
{"title":"Nonlinear simulation of ultrastable quartz crystal oscillators in frequency domain","authors":"N. Ratier, M. Bruniaux, R. Brendel","doi":"10.1117/12.793882","DOIUrl":"https://doi.org/10.1117/12.793882","url":null,"abstract":"We present a symbolic-numeric method dedicated to the simulation of ultra stable quartz oscillators entirely in the frequency domain including the nonlinear parts of the circuit. The main idea is to replace, by symbolic computation, the nonlinear differential system describing the oscillator by a system of nonlinear equations of Fourier coefficients whose solution is an approximation of the steady-state solution. This paper explains how to face the two main difficulties of this symbolic computation: the processing of nonlinear components and the management of large number of coefficients.","PeriodicalId":300417,"journal":{"name":"Advanced Optoelectronics and Lasers","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134209923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon optical bench for flip-chip integration of high speed widely tunable lasers 用于高速宽可调谐激光器倒装集成的硅光学平台
Advanced Optoelectronics and Lasers Pub Date : 2008-03-03 DOI: 10.1117/12.793290
M. Chacinski, A. Scholes, R. Schatz, P. Ericsson, M. Isaksson, S. Hammerfeldt
{"title":"Silicon optical bench for flip-chip integration of high speed widely tunable lasers","authors":"M. Chacinski, A. Scholes, R. Schatz, P. Ericsson, M. Isaksson, S. Hammerfeldt","doi":"10.1117/12.793290","DOIUrl":"https://doi.org/10.1117/12.793290","url":null,"abstract":"A silicon optical bench for flip chip mounted widely tunable modulated-grating Y-branch lasers is presented. Its impact on the static and dynamic performance of the laser device is evaluated and compared with a conventional aluminium nitride carrier. The carriers exhibited similar thermal and static performance but the dynamic performance was limited by the electrode layout and the higher microwave losses of the silicon optical bench. With improved microwave design of the electrodes, flip-chip mounting on a silicon optical bench is promising for low cost assembly of high-speed multi-electrode devices.","PeriodicalId":300417,"journal":{"name":"Advanced Optoelectronics and Lasers","volume":"642 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132788839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mode-locking of phenomena of external cavity lasers 外腔激光器的锁模现象
Advanced Optoelectronics and Lasers Pub Date : 2008-03-03 DOI: 10.1117/12.793395
N. Dogru
{"title":"Mode-locking of phenomena of external cavity lasers","authors":"N. Dogru","doi":"10.1117/12.793395","DOIUrl":"https://doi.org/10.1117/12.793395","url":null,"abstract":"Mode-locking characteristic of hybrid soliton pulse source (HSPS) utilizing linearly chirped raised-cosine flat top apodized fiber Bragg grating (FBG) is investigated by using coupled-mode equations. It is shown that proper mode-locking range where transform-limited pulses are generated is increased to 1.3 GHz by using linearly chirped raised-cosine flat top apodized FBG.","PeriodicalId":300417,"journal":{"name":"Advanced Optoelectronics and Lasers","volume":"202 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113966832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Band model of optical fiber Raman amplifier with multiwave pumping 多波抽运光纤拉曼放大器的波段模型
Advanced Optoelectronics and Lasers Pub Date : 2008-03-03 DOI: 10.1117/12.793875
G. Felinskyi, P. Korotkov
{"title":"Band model of optical fiber Raman amplifier with multiwave pumping","authors":"G. Felinskyi, P. Korotkov","doi":"10.1117/12.793875","DOIUrl":"https://doi.org/10.1117/12.793875","url":null,"abstract":"In present work, we will propose the spectroscopic model for the analysis of Raman gain spectrum based on oscillator theory and its application to the design of optical fiber Raman amplifiers with the multiwavelength pumping scheme. The oscillatory lineshape functions can simply describe the wavelength dependence of Raman gain in optical fibers and are very useful for the estimation of the gain bandwidth, Raman lasing, noise performance, and amplification processes in Raman amplifiers. The concept of an actual band based on the lineshape function is useful for the design of fiber Raman amplifiers with multiple wavelengths pumping. Proposed modeling allows us to analyze fiber Raman amplifier with combined multiwavelength pumping source for the extension of amplification bandwidth to L-band, which has the broad bandwidth over 80 nm and low gain ripple less than 0.5 dB. The proposed spectroscopic model can be further extended for the analysis of the complex spontaneous Raman scattering spectra with other doping materials.","PeriodicalId":300417,"journal":{"name":"Advanced Optoelectronics and Lasers","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133216458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Some electro-physical properties of InSb and InAs layers that were received with the help of methods of relaxed optics 用松弛光学的方法接收了InSb和InAs层的一些电物理性质
Advanced Optoelectronics and Lasers Pub Date : 2008-03-03 DOI: 10.1117/12.793296
P. Trokhimchuck
{"title":"Some electro-physical properties of InSb and InAs layers that were received with the help of methods of relaxed optics","authors":"P. Trokhimchuck","doi":"10.1117/12.793296","DOIUrl":"https://doi.org/10.1117/12.793296","url":null,"abstract":"The basic problems of the receiving p-n junctions in ion implanted InSb Mg+/InSb after CO2-laser irradiation and in p-InSb and p-InAs after Ruby laser irradiation are represented. Proper Volt-Ampere characteristics are analyzed. The basic physical mechanisms of receiving these structures are discussed too. Basic cause of difference these p-n junctions is various mechanisms of irreversible interaction light and semiconductor (self-absorption for Ruby laser irradiation and \"damage\"-absorption for CO2-laser irradiation).","PeriodicalId":300417,"journal":{"name":"Advanced Optoelectronics and Lasers","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129951643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A probabilistic analysis of the crystal oscillator behavior at low drive levels 低驱动电平下晶体振荡器行为的概率分析
Advanced Optoelectronics and Lasers Pub Date : 2008-03-03 DOI: 10.1117/12.795284
Y. Shmaliy, R. Brendel
{"title":"A probabilistic analysis of the crystal oscillator behavior at low drive levels","authors":"Y. Shmaliy, R. Brendel","doi":"10.1117/12.795284","DOIUrl":"https://doi.org/10.1117/12.795284","url":null,"abstract":"The paper discusses a probabilistic model of a crystal oscillator at low drive levels where the noise intensity is comparable with the oscillation amplitude. The stationary probability density of the oscillations envelope is derived and investigated for the nonlinear resonator loses. A stochastic explanation is given for the well-known phenomenon termed sleeping sickness associated with losing a facility of self-excitation by a crystal oscillator after a long storage without a power supply. It is shown that, with low drive levels leading to an insufficient feedback, a crystal oscillator generates the noise-induced oscillations rather than it absolutely \"falls in sleep\".","PeriodicalId":300417,"journal":{"name":"Advanced Optoelectronics and Lasers","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122621775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
All-optical logical gates built on optically linear bandgap structures covered with nonlinear material 建立在非线性材料覆盖的光学线性带隙结构上的全光逻辑门
Advanced Optoelectronics and Lasers Pub Date : 2008-03-03 DOI: 10.1117/12.795367
E. Glushko, A. Zakhidov
{"title":"All-optical logical gates built on optically linear bandgap structures covered with nonlinear material","authors":"E. Glushko, A. Zakhidov","doi":"10.1117/12.795367","DOIUrl":"https://doi.org/10.1117/12.795367","url":null,"abstract":"In our work, we investigate photonic bandgap (PBG) structures coated by nonlinear covering as systems that are of interest for possible applications in the all-optical adders and logical gates. Two principal schemes of an all-optical adder based on the 1D PBG materials containing optically nonlinear layers are discussed. It is shown that the only nonlinear layer covering linear photonic crystal gives effective signal control and signal processing. Theoretical estimations of the adder cell parameters are made for Si/SiO2 photonic crystals covered with layers made from nonlinear doped glasses. The calculated angular-frequency diagrams exhibited extremely sensitive areas inside the total reflection range, where the weak nonlinearity leads to dramatic change in light reflection and transmission.","PeriodicalId":300417,"journal":{"name":"Advanced Optoelectronics and Lasers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122524478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Hermite-Laguerre-Gaussian beams in astigmatic optical systems 像散光学系统中的厄米-拉盖尔-高斯光束
Advanced Optoelectronics and Lasers Pub Date : 2008-03-03 DOI: 10.1117/12.793382
E. Abramochkin, E. Razueva, V. Volostnikov
{"title":"Hermite-Laguerre-Gaussian beams in astigmatic optical systems","authors":"E. Abramochkin, E. Razueva, V. Volostnikov","doi":"10.1117/12.793382","DOIUrl":"https://doi.org/10.1117/12.793382","url":null,"abstract":"A transformation of a higher Gaussian beam in general astigmatic optical systems is described in terms of rotations in 3D space. This way is simpler than direct Fourier integral calculation and preferable for numerical simulations. Two examples of optical systems and corresponding transformations, connecting with mode converter and fractional Fourier transform, are discussed.","PeriodicalId":300417,"journal":{"name":"Advanced Optoelectronics and Lasers","volume":"554 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123311959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Processing of interference images at the control of surface parameters of optical fiber components 光纤元件表面参数控制下的干涉图像处理
Advanced Optoelectronics and Lasers Pub Date : 2008-03-03 DOI: 10.1117/12.793879
A. Filipenko, I. Nevludov, O. Sicheva
{"title":"Processing of interference images at the control of surface parameters of optical fiber components","authors":"A. Filipenko, I. Nevludov, O. Sicheva","doi":"10.1117/12.793879","DOIUrl":"https://doi.org/10.1117/12.793879","url":null,"abstract":"The control of a critical surfaces condition of fiber optic components is carried out by a method of two-beam interference under the scheme of Michelson interferometer. Ratios that connect surfaces form parameters with characteristics of interference images are resulted. The technique of useful information component distinguishing from a mix of interference signal with noise and a background of measurement that is based on use of bandpass Butterworth filters is offered and investigated.","PeriodicalId":300417,"journal":{"name":"Advanced Optoelectronics and Lasers","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128685156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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