International Topical Meeting on Microwave Photonics (MWP1997)最新文献

{"title":"Microwave Generation And Transmission With Chirping Laser Diodes And Dispersive Fibres","authors":"W. Freude, R. Braun, G. Großkopf, F. Schmidt","doi":"10.1109/MWP.1997.740276","DOIUrl":"https://doi.org/10.1109/MWP.1997.740276","url":null,"abstract":"Microwave generation and transmission is possible using directly modulated laser diodes (LD) and optical fibres. The chirp of the LD together with the fibre dispersion influences the microwave spectrum significantly. We calculate the optical spectrum of the LD and the photocurrent spectrum before and after fibre transmission analytically, and compare them with experimental results. We also report on bit error rate measurements for various operating conditions and show that FM-AM conversion in the fibre counterbalances the attenuation when increasing the transmission length. Introduction Hybrid fibre rad0 (HFR) networks upgrade existing copper or optical fibre cables by wireless transmission channels, employing the microwave and mm-wave frequency range 20. . .70 GHz. HFR may be used for future micro and pico-cell broadband mobile communication systems, for wireless in-house connections, or for bridging inexpensively the 'last mile' to a subscriber having no access to a fibre or coax system. Three main technologies exist for transmitting and generating microwave signals by optical means, namely direct intensity modulation (IM) of a laser diode (LD), suppressed carrier modulation with an external Mach-Zehnder modulator , and heterodyne techniques in which optical waves of different frequencies are coherently mixed. We discuss the direct IM of a chirping LD with a sinusoidal subcarrier at fm = 1.95; 2.52; 3.52 and 3.716 GHz for producing at a remote location the lcth harmonic ( I C = 9; 7; 5 and 5) microwave signal at lcfm = 17.6 and 18.58 GHz. We calculate the optical and the photocurrent spectra for an m o d u l a t e d subcarrier at various LD modulation current amplitudes without and with transmission over a dispersive fibre, and compare these spectra to measurements. Decreased bit error rate (BER) power penalties for zncreaszng transmission lengths are explained by these results. I1 Rate equation approach The rate equations for the phase p of the power amplitude a of the electric field, for the photon number Np N la12, and for the carrier concentration n~ [l, Eq. (2.77, 74, 78)] [a, Eq. (3.89)] as a function of the injection current represent a highly nonlinear system of dfferential equations, from which the (optical) Fourier spectrum ii of the power amplitude a may be calculated only numerically. To gain more physical insight, we simplify the problem as follows. Simplified approach The optical output field of a LD is represented by an analytic signal a with amplitude A and total output power Pa leaving the resonator (time t , angular frequency wo = 2 ~ f 0 , vacuum speed of light c, vacuum wavelength XO, frequency fo = c/Xo, Planck's constant h, time constant T R from h t e resonator mirror reflectivities), Spectrum of chirping laser diode a ( t ) = Ao(t) eJwut , Ao(t) = /Ao(t)/eJ'PO(t), P,(t) = $ la(t)I2 = N p ( t ) h f o / ~ ~ . (1) Following the analysis of [3] (also cited in [I, Eq. (5.2)-(5.4)] [2, Eq. (3.222, 3.146)]), the instantaneous f","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131954062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modelocked Microchip Laser With Millimeter Wave Subcarrier","authors":"P. Herczfeld, A. Vieira, V. Contarino","doi":"10.1109/MWP.1997.740227","DOIUrl":"https://doi.org/10.1109/MWP.1997.740227","url":null,"abstract":"Introduction There is increased demand for high speed fiberoptic links operating in the millimeter wave range with good noise figure and high dynamic range [1,2]. These links are used in data communications, multimedia signal distribution, providing fiberoptic access to wireless communications, as well as radar and remote sensing. Most commonly used millimeter-wave subcarrier sources are actively or passively modelocked semiconductor lasers. They are small, compact but have undesirably high chirp and phase noise. Mode locked fiber lasers provide high performance, but are bulky. In this paper we describe a compact mode locked Nd: LiNb03 microchip laser incorporated into a microwave cavity. The significant novelty of this approach is that the same medium, the Nd: L imo3 crystal, serves the gain medium as well as the phase modulator, in microchip configuration. Experimental results include mode locking at 40GHz and a phase noise of -1 lOdBc/Hz at 1kJ& offset. The presentation will also include an analysis of the mode locking in this device.","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"299 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121151864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A High Performance Fiber Optical S-band Radar Link","authors":"J. Onnegren, A. Alping","doi":"10.1109/MWP.1997.740289","DOIUrl":"https://doi.org/10.1109/MWP.1997.740289","url":null,"abstract":"An optical radar receiver link for S-band (3 GHz) application has been evaluated theoretically and experimentally. The total radar link including preamplifier shows a noise figure (NF) of 3 dB and a spurious free dynamic range (SFDR) of 104 dBIH2”. The optical link itself has a maximum SFDR of 115 dBIH2” at 3 GHz.","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127239598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quasi-optical Phase-shifterless Scanning Array","authors":"Cheng-Nan Hu, Ching-Kuang C. Tzuang, Guang-Jong Chou","doi":"10.1109/MWP.1997.740256","DOIUrl":"https://doi.org/10.1109/MWP.1997.740256","url":null,"abstract":"","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127639553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Application Of Opto-electronic Techniques In Phased Array Antenna Beamforming","authors":"A. Seeds","doi":"10.1109/MWP.1997.740216","DOIUrl":"https://doi.org/10.1109/MWP.1997.740216","url":null,"abstract":"","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125029021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Traveling Fringes Photoconductor Principle And Optimization","authors":"T. Merlet, D. Dolfi, J. Huignard","doi":"10.1109/MWP.1997.740238","DOIUrl":"https://doi.org/10.1109/MWP.1997.740238","url":null,"abstract":"Optoelectronic processing of microwave signals' requires photodetectors with both high speed and high saturation level. The low optical saturation intensities of classical high-speed photodiodes limit the delivered microwave power to few tenths of microwatts\" ', '. In order to increase the saturation level of microwave photodetectors, we have proposed an original application of the synchronous drift, in a photoconductor, of photogenerated carriers with a moving interference pattern', '. This traveling fringes photodetector (TFP) provides a large detection volume that could be suitable for efficient generation of microwave signals. In this paper, we discuss on the influence of contacts on the TFP performances. We also present experimental results obtained with an optimized forward bias p.i.n GaAs sample that shows a sensitivity of 1 A\" at resonance.","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125532551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Millimeter-wave Upconversion By Nonlinear-photodetection Using A Carrier Generated From A remote Mode-locked Semiconductor Laser","authors":"T. Hoshida, M. Tsuchiya, T. Kamiya","doi":"10.1109/MWP.1997.740261","DOIUrl":"https://doi.org/10.1109/MWP.1997.740261","url":null,"abstract":"We propose and demonstrate a scheme for upconversion of [F subcarrier signals with a millimeter-wave carrier using nonlinear photodetection and remote carrier supply. In a preliminary experiment, the former is realized by using ,a commercially available photodiode under its saturation condition, and the latter is provided by a suibharmonically hybrid mode-locked semiconductor laser. It is demonstrated that a 66-GHz carrier generated from the mode-llocked laser and 400-MHz subcarriers of IF laser output are successfully mixed after transmission over a 30-km non-dispersionshifted optical fiber.","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131681486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Eight-octave Bandwidth Optical Receiver Using Distributed Amplification","authors":"A. Zolomy, T. Berceli, Attila Hilt, G. Járó, C. Aitchison, A. Baranyi, J. Ladvansky, J.Y. Liang","doi":"10.1109/MWP.1997.740248","DOIUrl":"https://doi.org/10.1109/MWP.1997.740248","url":null,"abstract":"A new approach is presented utilizing low-noise distributed amplification based on a hybrid integration technology. This way eight-octave bandwidth has been achieved with a responsivity characteristics flat from 40 MHz up to 10 GHz.","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131119367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Active Phased Array With Optical Control And Beam-scanning Capability","authors":"W. Deal, T. Itoh","doi":"10.1109/MWP.1997.740255","DOIUrl":"https://doi.org/10.1109/MWP.1997.740255","url":null,"abstract":"Radar, missile guidance and communications systems typically have rigid spatial constraints. However, in conventional systems, large amplifiers and motors are requirtxl to transmit high power and scan the antenna main beam, respectively. Waveguide typically is used because it has low loss and high power capability, but is bulky and not easily routed. These obstacles have: led to continuing research in system and component designs to produce integrated and compact designs. One method that has shown promise in remedying some of these problems is the active antenna array, which integrates active components directly into the antenna platform. Research has shown that power can be combined quasi-optically in active antenna arrays [I]-[3]. Also, the main beam can be electronically scanned by controlling the phase between adjacent antenna elements [4]-[5]. Recently, an active phased array with optical input and beam-scanning capability was reported [6]. In [6], a microwave reference signal is prlovided through an optical fiber link, but array control signal are provided electronically. In this work, a novel method of controlling individual array elements for beam-scanning is accomplished by optically illuminating commercially available MESFET transistors.","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132034849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dynamics Of The Electroabsorption In MSM-Modulators based on Low Temperature Grown GaAs","authors":"M. Krause, S. Dankowski, P. Kiesel, S. Tautz, U. Keil, H. Seichter, G. Dohler","doi":"10.1109/MWP.1997.740254","DOIUrl":"https://doi.org/10.1109/MWP.1997.740254","url":null,"abstract":"We report on carrier and field dynamics in low temperature grown GaAs (LT-GaAs) layers by differential transmission. LT-GaAs is grown by molecular beam epitaxy under standard growth conditions except a lower substrate temperature of 200°C to 300°C instead of the usual 600°C. This leads to an incorporatioln of up to 1.5% excess arstmic in the crystal, mainly as A h and Asi, accompanied by V G ~ . These defects cause some outstanding properties of the material, for instance an extremely short carrier lifetime. Subsequent annealing at temperatures between 450°C and 900°C results in high resistivity and raised breakdown fields. All properties of LT-GaAs depend strongly on both the growth and the annealing temperature. The combination of short carrier lifetimes and high breakdown fields makes LT-GaAs a very interesting material for ultrafast electro-optical modulators. In particular, they are suitable for switching high optical power due to low (dark currents and small photo currents, which result in low electrical energy dissipation. IDC measurements on metal-semiconductor-metal (MSM)-modulators on 1 pm thick LT-(A1)GaAs layers yield remarkalble transmission changes ofup to 1:1.8. In this paper we focus on the dynamics of electroabsorption. Lifetimes of photogenerated carriers in LT-GaAs are well investigated without electric fields. However, the behavior under the influence of an electric field is essential for the development of electronic devices of any kind. We performed pump and probe experiments on LT-GaAs MSIM-modulators with lOOfs optical pulses from a mode-locked Ti:sapphire laser with spectral width of 8 nm. Taking advantage of an epitaxial lift-off technique we separated the LT-GaAs layers from the substrates and attached them to a thin sheet of glass. The field is applied via interdigitated finger contacts (MSM-contacts). We detected the transmission changes of th~e probe beam which are induced by the pump beam as a function of the delay between the two pulses. Measurements with and without applied voltage are compared'.","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134217239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}