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2022 10th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2023-05-12 DOI: 10.1109/isne56211.2023.10221625
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引用次数: 0
Compact Broadband Balanced Filter Based on Integrated Passive Process 基于集成无源工艺的紧凑型宽带平衡滤波器
2022 10th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2023-05-12 DOI: 10.1109/ISNE56211.2023.10221638
Pan Tang, Mingqing Liu, Yan-Xiong Wang, Meng-Xin Xu, Yanfeng Jiang, T. Qiang
{"title":"Compact Broadband Balanced Filter Based on Integrated Passive Process","authors":"Pan Tang, Mingqing Liu, Yan-Xiong Wang, Meng-Xin Xu, Yanfeng Jiang, T. Qiang","doi":"10.1109/ISNE56211.2023.10221638","DOIUrl":"https://doi.org/10.1109/ISNE56211.2023.10221638","url":null,"abstract":"In this paper, we propose a compact, broadband balanced filter based on integrated passive process (IPD), which can realize the balanced-unbalanced conversion of microwave signal. The proposed balanced filter is composed of a band-pass filter and a balun, the former selects the working frequency band for the balanced filter, and the latter realizes the conversion of the signal. Simulation results show that the specific operation frequency band of the balanced filter is 2.8 GHz to 4.8 GHz, the insertion loss of the two output ports at the center frequency of 4.37 GHz is −1.514dB and −1.541dB respectively, the phase difference is 180.9°, and the center frequency is within the range of 500 MHz. The insertion loss of the two output ports does not exceed −2.5dB, the maximum difference between the insertion loss of the two ports is about 1 dB, the phase difference fluctuates up and down by ±5°, and the overall size is approximately 1250 $mu {mathrm {m}} times 1250 mu$m. It has the advantages of compact structure, low loss, frequency bandwidth, low phase deviation, it can be suitable for applications in communication, RF front-end, Bluetooth, WiFi, GPS navigation and other fields.","PeriodicalId":260817,"journal":{"name":"2022 10th International Symposium on Next-Generation Electronics (ISNE)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115030931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel SA-LIGBT with Dielectric Isolation 一种具有介质隔离的新型sa - light
2022 10th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2023-05-12 DOI: 10.1109/ISNE56211.2023.10221656
Teng Liu, Hua Song, Lihui Gu, Zhili Zhang, Anchao Zhang, Wentong Zhang, Nailong He, Sen Zhang
{"title":"A Novel SA-LIGBT with Dielectric Isolation","authors":"Teng Liu, Hua Song, Lihui Gu, Zhili Zhang, Anchao Zhang, Wentong Zhang, Nailong He, Sen Zhang","doi":"10.1109/ISNE56211.2023.10221656","DOIUrl":"https://doi.org/10.1109/ISNE56211.2023.10221656","url":null,"abstract":"A novel shorted-anode lateral insulated gate bipolar transistor with dielectric isolation (DI-SA LIGBT) is proposed in this paper. The DI-SA structure is formed by introducing a dielectric trench between P+ and N+in the SA devices. The DISA structure isolation consists of vertical and lateral parts. The lateral dielectric isolation trench increases the anode current path, reduces the resistance ratio between the drift region and the collector, and effectively suppresses the snapback phenomenon in the SA LIGBT unipolar-to-bipolar mode. In the DI-SA LIGBT structure, the snapback and switching speed of the device can be optimized by adjusting the width and length of the vertical and lateral dielectric isolation trench. This paper compares the controllable advantages of DISA LIGBT and conventional SA LIGBT through Technology Computer-Aided Design (TCAD) simulation.","PeriodicalId":260817,"journal":{"name":"2022 10th International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128429558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Creation of Digital Virtual Human Based on GAN2Shape and Kinect 2.0 基于GAN2Shape和Kinect 2.0的数字虚拟人创建
2022 10th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2023-05-12 DOI: 10.1109/ISNE56211.2023.10221572
Weijia Zhang, Yuan Zheng, Feiyu Chen, Yulin Li, Yucheng Tian, Xu Cao, Dan Qiu, Jiaju Li, Jin Xie
{"title":"Creation of Digital Virtual Human Based on GAN2Shape and Kinect 2.0","authors":"Weijia Zhang, Yuan Zheng, Feiyu Chen, Yulin Li, Yucheng Tian, Xu Cao, Dan Qiu, Jiaju Li, Jin Xie","doi":"10.1109/ISNE56211.2023.10221572","DOIUrl":"https://doi.org/10.1109/ISNE56211.2023.10221572","url":null,"abstract":"This study aimed at the problem of the low recognition rate of facial expressions cause by complex environments. Hence, the study examined, digital virtual humans through GAN2Shape and Kinect 2.0 to obtain high-quality three-dimensional (3D) images of human faces. First, we captured and recognized facial expressions through Kinect. Second, we generated high-quality 3D images of the facial expressions through GAN2Shape and transferred the images to Unity 3D for front and back-end development to generate a facial model. Third, we recognized and captured motions through Kinect. Finally, we combined the facial model with the motions to form the virtual human model. Experimental results show that the virtual human model generated through this method has a clear face and a good effect in motion capture.","PeriodicalId":260817,"journal":{"name":"2022 10th International Symposium on Next-Generation Electronics (ISNE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123878471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Adjustable Ramp Voltage Circuit for a Large Array of Capacitive Loads 一种用于大容量负载阵列的可调斜坡电压电路
2022 10th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2023-05-12 DOI: 10.1109/ISNE56211.2023.10221618
Bo Liu, Xiaoyu Zhong, Xiaofeng Gu
{"title":"An Adjustable Ramp Voltage Circuit for a Large Array of Capacitive Loads","authors":"Bo Liu, Xiaoyu Zhong, Xiaofeng Gu","doi":"10.1109/ISNE56211.2023.10221618","DOIUrl":"https://doi.org/10.1109/ISNE56211.2023.10221618","url":null,"abstract":"In current image sensor circuits, the traditional ramp circuit shows the problems of low precision of adjustable slope and insufficient driving ability when facing a large array. This paper proposes a high-precision and high-driving adjustable ramp voltage circuit for the image sensor, including a bandgap reference voltage source, a current mirror array, and a buffer driver. The reference current in the proposed adjustable ramp circuit adopts a high-precision bandgap design, and a buffer driver circuit is added to ensure the slope accuracy. Meanwhile, the output terminal adopts a push-pull structure. Simulation results in a 65 nm CMOS process show that the proposed adjustable ramp generation circuit can drive a large array of capacitive loads with a ramp voltage range from 1 V to 5 V and an adjustable slope range from 6 $mu$s to 60 $mu$s. The adjustable ramp circuit can achieve 1-10 dynamic adjustments, and a large array of capacitive loads can be driven when dynamic adjustment is achieved. Compared with the traditional resistance or capacitance adjustable circuit, the slope accuracy increases by 20%, and the driving ability of the proposed adjustable ramp circuit increases by 61.35%.","PeriodicalId":260817,"journal":{"name":"2022 10th International Symposium on Next-Generation Electronics (ISNE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114770588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Generic Memory Modeling with Recurrent Neural Network 基于递归神经网络的通用记忆建模
2022 10th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2023-05-12 DOI: 10.1109/ISNE56211.2023.10221590
Zhao Rong, Lining Zhang, M. Chan
{"title":"Generic Memory Modeling with Recurrent Neural Network","authors":"Zhao Rong, Lining Zhang, M. Chan","doi":"10.1109/ISNE56211.2023.10221590","DOIUrl":"https://doi.org/10.1109/ISNE56211.2023.10221590","url":null,"abstract":"In this work, a methodology for developing a memory compact model is described using recurrent neural network (RNN). Compared to traditional modeling approaches, it is flexible and able to develop an accurate model based on physical data before the material physics is fully understood. A simple ReRAM-type memory model is demonstrated using Nonlinear Autoregressive with External Input (NARX) machine learning approach. To enable the neural network to capture the resistive switching characteristics of ReRAM, the output at a range of cycling voltages was captured and used as training data. The trained model is used for DC prediction under different voltage amplitudes, and the prediction results are consistent with the physical data, with MSE values below $10^{-9}$. The accuracy of the RNN-assisted ReRAM model during the read, write and erase operations is also evaluated to show the validity of the approach. The calibration between the prediction results of the model and experimental data further proves the feasibility of the approach.","PeriodicalId":260817,"journal":{"name":"2022 10th International Symposium on Next-Generation Electronics (ISNE)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126303147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Broadband Millimeter-Wave Frequency-Scanning Continuous Transverse Stub Array Based on SIW 基于SIW的宽带毫米波扫频连续横向短阵
2022 10th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2023-05-12 DOI: 10.1109/ISNE56211.2023.10221602
Luqi Di, Xiang Song, Siwei Ji, B. Gao, Xiaotong Li, Lin Du, Zebin Kong, Bo Wang
{"title":"Broadband Millimeter-Wave Frequency-Scanning Continuous Transverse Stub Array Based on SIW","authors":"Luqi Di, Xiang Song, Siwei Ji, B. Gao, Xiaotong Li, Lin Du, Zebin Kong, Bo Wang","doi":"10.1109/ISNE56211.2023.10221602","DOIUrl":"https://doi.org/10.1109/ISNE56211.2023.10221602","url":null,"abstract":"A broadband millimeter-wave frequency-scanning array based on substrate integrated waveguide (SIW) is proposed in this paper. The radiation element is stepped continuous transverse stub (CTS) composed of SIW. The fed structure is a grounded coplanar waveguide (GCPW) to SIW transition line using coupling slots. The beam steering direction varies with different frequencies within the working bandwidth. One 16-element array is simulated to validate the design. The simulation results show that the relative bandwidth of S11 less than −10dB is 37.8% from 32.6 GHz to 48.1 GHz. The gain at the broadside is 18.39 dBi with the first sidelobe level of −10.2dB and the 3 dB beam width of 5.6°. The scanning angle range is from −37° to 18° depending on frequency.","PeriodicalId":260817,"journal":{"name":"2022 10th International Symposium on Next-Generation Electronics (ISNE)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126508712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate 半封装金属-绝缘体-半导体栅极的增强模式AlGaN/GaN hemt
2022 10th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2023-05-12 DOI: 10.1109/ISNE56211.2023.10221606
Mao Jia, Bin Hou, Fuchun Jia, Ling Yang, J. Ao, X. Ma
{"title":"Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate","authors":"Mao Jia, Bin Hou, Fuchun Jia, Ling Yang, J. Ao, X. Ma","doi":"10.1109/ISNE56211.2023.10221606","DOIUrl":"https://doi.org/10.1109/ISNE56211.2023.10221606","url":null,"abstract":"In this work, p-GaN gate HEMTs with a semi-wraparound metal-insulator-semiconductor (MIS) gate are investigated. By using SiN and gate metal to surround the p-GaN layer, the output current of the p-GaN gate HEMTs has been increased from 11.4 mA/mm to 15.2 mA/mm, with a high threshold voltage of 8.1 V. The on-state resistance has been reduced from $166.7 mOmega cdot mm$ to $97.0 mOmega cdot mm$. The peak transconductance error bars show an increase in the average transconductance of the samples from 4.4 mS to 5.5 mS. The breakdown characteristic shows an increase in breakdown voltage from 174 V to 207 V, demonstrating the effectiveness of this method in improving the DC characteristics of p-GaN gate HEMTs.","PeriodicalId":260817,"journal":{"name":"2022 10th International Symposium on Next-Generation Electronics (ISNE)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115089827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Investigations on the Impedance Characteristics of the Gas Sensors 气体传感器阻抗特性的实验研究
2022 10th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2023-05-12 DOI: 10.1109/ISNE56211.2023.10221646
Ying Zhang, Zhi-Wen Tan, Wang-Hui Zou
{"title":"Experimental Investigations on the Impedance Characteristics of the Gas Sensors","authors":"Ying Zhang, Zhi-Wen Tan, Wang-Hui Zou","doi":"10.1109/ISNE56211.2023.10221646","DOIUrl":"https://doi.org/10.1109/ISNE56211.2023.10221646","url":null,"abstract":"For commonly-used gas sensors, their resistance characteristics are mostly exploited for gas detection and identification. However, in practical, the gas sensors exhibit complicated impedance characteristics which probably include resistive, capacitive and inductive response during the inter-reaction between the gas molecules and the sensing materials. We designed and built a dedicated measurement system based on the frequency scanning method for the research of the impedance characteristics of the gas sensors. 11 types of commercial gas sensors were chosen, and their impedance characteristics in response to the ethanol and the acetone were measured separately. We analyzed the frequency response, the concentration response and the corresponding trends according the measurement results.","PeriodicalId":260817,"journal":{"name":"2022 10th International Symposium on Next-Generation Electronics (ISNE)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124062673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation by Simulation of Quasi-vertical GaN Schottky Barrier Diode With Trench Floating Metal Rings 沟槽漂浮金属环准垂直GaN肖特基势垒二极管的仿真评价
2022 10th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2023-05-12 DOI: 10.1109/ISNE56211.2023.10221673
Kai Liu, Chong Wang, Xuefeng Zheng, Ang Li, Xiao-hua Ma, Yue Hao
{"title":"Evaluation by Simulation of Quasi-vertical GaN Schottky Barrier Diode With Trench Floating Metal Rings","authors":"Kai Liu, Chong Wang, Xuefeng Zheng, Ang Li, Xiao-hua Ma, Yue Hao","doi":"10.1109/ISNE56211.2023.10221673","DOIUrl":"https://doi.org/10.1109/ISNE56211.2023.10221673","url":null,"abstract":"This paper proposes the trench floating metal ring (TR-FMR) as a novel terminal structure to improve the breakdown voltage (BV) of quasi-vertical GaN Schottky barrier diode (SBD). TR-FMR can disperse the electric field in both horizontal and vertical directions and introduces a new electric field peak into the GaN drift layer, which can make full use of drift layer to withstand voltage. The simulation results show that, compared with PL-FMR, the breakdown of TRFMR SBDs with one metal ring is increased by 180 V, twice than conventional SBD. The depletion region widths at horizontal and vertical directions are larger than PL-FMR, achieving a more uniform electric field distribution. Moreover, the BV can increase with the number of rings increasing, reaching 670 V for three rings. The TR-FMR terminal structure shows great promise for quasi-vertical GaN SBD.","PeriodicalId":260817,"journal":{"name":"2022 10th International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128321380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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