发布求助
文献互助 智能选刊 最新文献

2021 IEEE MTT-S International Wireless Symposium (IWS)最新文献

筛选
英文 中文
Multi-state Two-way Fano Switch in Plasmonic Metamaterials 等离子体超材料中的多态双向范诺开关
2021 IEEE MTT-S International Wireless Symposium (IWS) Pub Date : 2021-05-23 DOI: 10.1109/IWS52775.2021.9499522
Y. Zhou, Jian Xu, L. Dai
{"title":"Multi-state Two-way Fano Switch in Plasmonic Metamaterials","authors":"Y. Zhou, Jian Xu, L. Dai","doi":"10.1109/IWS52775.2021.9499522","DOIUrl":"https://doi.org/10.1109/IWS52775.2021.9499522","url":null,"abstract":"Here a multi-state two-way Fano resonance switch in the plasmonic metamaterials has been proposed. The electrical Fano switch is composed of three concentric spoof localized surface plasmons (LSP) resonators. By adjusting the slit of the middle or inner spoof LSP resonator, four states of two kinds of Fano resonance modes could be supported. The devices could be applied in many applications such as plasmonic circuits, sensing or switching, and so on.","PeriodicalId":260591,"journal":{"name":"2021 IEEE MTT-S International Wireless Symposium (IWS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114444269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research on Frequency Multiplier Behavioral Model Based on K-parameter 基于k参数的乘频器行为模型研究
2021 IEEE MTT-S International Wireless Symposium (IWS) Pub Date : 2021-05-23 DOI: 10.1109/IWS52775.2021.9499461
Chengcheng Xie, Hongliu Liu, Yong Zhou, Jun Xing
{"title":"Research on Frequency Multiplier Behavioral Model Based on K-parameter","authors":"Chengcheng Xie, Hongliu Liu, Yong Zhou, Jun Xing","doi":"10.1109/IWS52775.2021.9499461","DOIUrl":"https://doi.org/10.1109/IWS52775.2021.9499461","url":null,"abstract":"To extract the behavioral model of frequency multiplier, the theory and method of K-parameter are proposed. A terahertz frequency tripler circuit is used to extract the $K$-parameter model. When a 50 Ω load is connected at the output port, the model can accurately characterize the amplitude and phase of the input and output products of the tripler. When the input frequency is interpolated, the simulation accuracy of the $K$-parameter model is equivalent to that of the X-parameter model, and it can also characterize the mixer's characteristics under a certain harmonic impedance mismatch state.","PeriodicalId":260591,"journal":{"name":"2021 IEEE MTT-S International Wireless Symposium (IWS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126210256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Millimeter-Wave Filtenna Based on Modified Quarter-Mode Substrate Integrated Waveguide with High Selectivity 基于高选择性改进四分之一模衬底集成波导的毫米波滤波器
2021 IEEE MTT-S International Wireless Symposium (IWS) Pub Date : 2021-05-23 DOI: 10.1109/IWS52775.2021.9499370
Linlin Fan, Rong Lu, Yun Hu, W. Hong
{"title":"Millimeter-Wave Filtenna Based on Modified Quarter-Mode Substrate Integrated Waveguide with High Selectivity","authors":"Linlin Fan, Rong Lu, Yun Hu, W. Hong","doi":"10.1109/IWS52775.2021.9499370","DOIUrl":"https://doi.org/10.1109/IWS52775.2021.9499370","url":null,"abstract":"A compact, high-selectivity and linearly polarization (LP) patch filtenna (filtering antenna) without extra filtering circuits is presented in this paper. Two radiation nulls are introduced at both lower and upper band edges of the filter response. The proposed filtenna contains a feeding stripline, a rectangular patch, two ring patches and a modified quarter-mode substrate integrated waveguide (QMSIW) completely shielded by plated-through holes. For demonstration, an antenna prototype has been simulated, fabricated and measured. The measured results agree well with the simulated ones. According to the measured results, the antenna operates in 24.6-29.6 GHz covering the 5G N257 (26.5-29.5 GHz) and part of N258 (24.25-27.5 GHz) millimeter wave bands with reflection coefficient less than −10 dB and average gain of 5.7 dBi, which indicates that the fractional impedance bandwidth is 18.45%.","PeriodicalId":260591,"journal":{"name":"2021 IEEE MTT-S International Wireless Symposium (IWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128057590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electromagnetic energy focusing based on localized spoof surface plasmon polaritons 基于局域欺骗表面等离子激元极化子的电磁能聚焦
2021 IEEE MTT-S International Wireless Symposium (IWS) Pub Date : 2021-05-23 DOI: 10.1109/IWS52775.2021.9499367
Xin Zheng, Jingjing Zhang
{"title":"Electromagnetic energy focusing based on localized spoof surface plasmon polaritons","authors":"Xin Zheng, Jingjing Zhang","doi":"10.1109/IWS52775.2021.9499367","DOIUrl":"https://doi.org/10.1109/IWS52775.2021.9499367","url":null,"abstract":"We propose a self-similar linear chain of several metallic spirals whose sizes and separations are decreasing proportionally. This structure owns the ability of focusing electro-mag-netic energy on subwavelength scale, with the magnitude of local electric field intensity reaching 1435, located around the smallest spiral. Near-field response spectrum and near-field mapping are performed in the microwave regime and experimental results agree well with theoretical simulation. This study may have promising applications in surface enhanced Raman scattering and elec-tromaznetic near-field sensing.","PeriodicalId":260591,"journal":{"name":"2021 IEEE MTT-S International Wireless Symposium (IWS)","volume":"03 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126999530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A K-Band Variable Gain Low-Noise Amplifier with Low Phase Variation in 65-nm CMOS 65纳米CMOS低相位变化k波段变增益低噪声放大器
2021 IEEE MTT-S International Wireless Symposium (IWS) Pub Date : 2021-05-23 DOI: 10.1109/IWS52775.2021.9499661
Depeng Cheng, Lianming Li, Min Xie, Xu Wu, Long He, Bin Sheng
{"title":"A K-Band Variable Gain Low-Noise Amplifier with Low Phase Variation in 65-nm CMOS","authors":"Depeng Cheng, Lianming Li, Min Xie, Xu Wu, Long He, Bin Sheng","doi":"10.1109/IWS52775.2021.9499661","DOIUrl":"https://doi.org/10.1109/IWS52775.2021.9499661","url":null,"abstract":"Based on the inductive source degenerated cascode amplifier gain cell, a two-stage variable gain K-band low noise amplifier (LNA) with low phase variation is designed for wireless communication. With the transformer-based matching network and current steering variable gain techniques, theoretical analysis and simulations are undertaken, revealing and verifying the way to achieve wide bandwidth and low phase variation. Over 19-to-23 GHz, test results show that the proposed circuit achieves 4.5-to-18.5-dB power gain, 4.1-dB noise figure (NF) and 14.5 dBm OIP3. For a low phase variation, less than 1.8° RMS phase error can be achieved with 6dB gain variation from 19 to 23 GHz. Implemented in a 65-nm CMOS process, the LNA consumes 67.2 mW from a 1.2 V supply and its chip size (including all pads) is 0.8×0.48 mm2.","PeriodicalId":260591,"journal":{"name":"2021 IEEE MTT-S International Wireless Symposium (IWS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125118536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Single-layer Wideband Circuit Analog Absorber Combined Polarization Conversion 单层宽带电路模拟吸收器组合极化转换
2021 IEEE MTT-S International Wireless Symposium (IWS) Pub Date : 2021-05-23 DOI: 10.1109/IWS52775.2021.9499451
Zhaowang Cao, Gengjiang Yao, Haoran Li, Jianjun Jiang
{"title":"Single-layer Wideband Circuit Analog Absorber Combined Polarization Conversion","authors":"Zhaowang Cao, Gengjiang Yao, Haoran Li, Jianjun Jiang","doi":"10.1109/IWS52775.2021.9499451","DOIUrl":"https://doi.org/10.1109/IWS52775.2021.9499451","url":null,"abstract":"In this paper, a dual-band single-layer circuit analog (CA) absorber combined the absorption with other mechanisms is described. The design introduces the polarization-conversion (PC) into the resistor-loaded cross-dipole arrays. First, a single-layer wideband CA absorber with a metal backplate is designed. The inverted U as a polarization convertor is then used and optimized to improve the absorption bandwidth. It is shown through simulation and measurement that the proposed structure covers a dual band of 2.28 – 8.91 GHz and 13.65 – 18 GHz below −10 dB. It is worth mentioning that the structure can be used to diffuse the electromagnetic wave by rotating and combining the PC absorber.","PeriodicalId":260591,"journal":{"name":"2021 IEEE MTT-S International Wireless Symposium (IWS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131466061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Graphene Assembled Film Based Millimeter Wave Antenna Array for 5G Mobile Communications 基于石墨烯组装膜的5G移动通信毫米波天线阵列
2021 IEEE MTT-S International Wireless Symposium (IWS) Pub Date : 2021-05-23 DOI: 10.1109/IWS52775.2021.9499635
R. Song, Xiaoxiao Chen, Shaoqiu Jiang, Zelong Hu, Daping He
{"title":"Graphene Assembled Film Based Millimeter Wave Antenna Array for 5G Mobile Communications","authors":"R. Song, Xiaoxiao Chen, Shaoqiu Jiang, Zelong Hu, Daping He","doi":"10.1109/IWS52775.2021.9499635","DOIUrl":"https://doi.org/10.1109/IWS52775.2021.9499635","url":null,"abstract":"This paper presents a millimeter-wave antenna array based on flexible graphene assembled film (GAF) for 5G mobile communications. The GAF has high electrical conductivity of 1.1×106 S/m with thickness of 26 µm and density of 1.45 g/cm3. The proposed GAF antenna array has 4×4 antenna elements with Chebyshev current distribution. The simulated and measured results show that the GAF antenna array has high gain of 18.2 dBi and −10 dB impedance bandwidth of 1.52 GHz covering the range from 25.14 GHz to 26.66 GHz, which is much better than copper antenna array. In addition, the GAF antenna array has similar radiation patterns with copper antenna array, which indicates that the high conductivity GAF is a potential substitute for metal materials.","PeriodicalId":260591,"journal":{"name":"2021 IEEE MTT-S International Wireless Symposium (IWS)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131594681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Wide Tuning Range low Kvco Ka-Band BiCMOS LC-VCO Using Varactor Bank 利用变容管组实现宽调谐范围低Kvco ka波段BiCMOS LC-VCO
2021 IEEE MTT-S International Wireless Symposium (IWS) Pub Date : 2021-05-23 DOI: 10.1109/IWS52775.2021.9499714
Rui Zhang, Yuanye Zheng, Zhe Chen, Debin Hou, Jixin Chen, W. Hong
{"title":"A Wide Tuning Range low Kvco Ka-Band BiCMOS LC-VCO Using Varactor Bank","authors":"Rui Zhang, Yuanye Zheng, Zhe Chen, Debin Hou, Jixin Chen, W. Hong","doi":"10.1109/IWS52775.2021.9499714","DOIUrl":"https://doi.org/10.1109/IWS52775.2021.9499714","url":null,"abstract":"A wide tuning rang, low KVCO LC voltage-controlled oscillator (VCO) is presented in this work. A pair of HBT is used to form a cross-coupled pair, working in the Class-C mode. In order to achieve low phase noise and wide tuning range at the same time, a 3-bits varactor bank and a varactor array are used to reduce the Kvco and make the tuning range as wide as possible. The proposed VCO is fabricated in 0.13 µm SiGe BiCMOS process with core area of 0.48×0.33 mm2. The tuning range of the VCO is measured from 28.5 ~ 35 GHz (20.5%), and the phase noise at 1 MHz offset is better than −95 dBc/Hz. The peak output power is 6.2 dBm with the DC supply voltage of 1.8 V and current of 12.2mA.","PeriodicalId":260591,"journal":{"name":"2021 IEEE MTT-S International Wireless Symposium (IWS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126597548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A Compact 1.71-2.69GHz Diplexer Based on HRS IPD Technology 基于HRS IPD技术的紧凑型1.71-2.69GHz双工器
2021 IEEE MTT-S International Wireless Symposium (IWS) Pub Date : 2021-05-23 DOI: 10.1109/IWS52775.2021.9499400
Xiaomei Li, Danye Wang, Q. Qin, Jiajin Song, Liguo Sun
{"title":"A Compact 1.71-2.69GHz Diplexer Based on HRS IPD Technology","authors":"Xiaomei Li, Danye Wang, Q. Qin, Jiajin Song, Liguo Sun","doi":"10.1109/IWS52775.2021.9499400","DOIUrl":"https://doi.org/10.1109/IWS52775.2021.9499400","url":null,"abstract":"In this paper, a compact 1.71-2.69GHz diplexer is designed and fabricated for mobile phone terminals based on high-resistivity silicon (HRS) integrated passive device (IPD) technology. Low insertion loss and compact size can be achieved by utilizing new LC resonances to provide transmission zeros. The chip size of the diplexer is 1.525mm×0.95mm×0.1mm. Test results show that the operating center frequencies of the low and high frequency bands of the diplexer are 1.94 GHz and 2.595 GHz, respectively. The low band maximum insertion loss is 1.3dB in 1.71GHz ~ 2.17GHz. The high band maximum insertion loss is 0.7dB in 2.5GHz ~ 2.69GHz. The isolation between two bands is better than 11.2dB in 1.71GHz ~ 2.69GHz.","PeriodicalId":260591,"journal":{"name":"2021 IEEE MTT-S International Wireless Symposium (IWS)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130535293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Coexistence-Mode Composite Right/Left-Handed E-Plane Subatrate Integrate Waveguide Butler Matrix 共存模复合左右e平面亚基积分波导巴特勒矩阵
2021 IEEE MTT-S International Wireless Symposium (IWS) Pub Date : 2021-05-23 DOI: 10.1109/IWS52775.2021.9499506
Qiang Sun, Y. Ban
{"title":"Coexistence-Mode Composite Right/Left-Handed E-Plane Subatrate Integrate Waveguide Butler Matrix","authors":"Qiang Sun, Y. Ban","doi":"10.1109/IWS52775.2021.9499506","DOIUrl":"https://doi.org/10.1109/IWS52775.2021.9499506","url":null,"abstract":"The miniaturization design of beamforming network (BFN) is the key to improve the application value of the multibeam array antenna. This paper presents a miniaturized E-plane substrate integrate waveguide (SIW) Butler matrix (BM) based on the coexistence mode composite right/left-handed (Co-mode CRLH) substrate integrate waveguide (SIW) transmission lines technology. The interdigital slot (IDS) is introduced into the coupling region of the traditional E-plane couplers to construct the Co-mode CRLH transmission characteristics. By adjusting the size of the IDS, the phase constants of the TE10 mode and the quasi- TEM mode in the coupling region are controlled. By increasing the difference between two kinds of the phase constants, the length of the coupling region can be reduced, and the miniaturized E-plane BM is obtained. Compared with the traditional E-plane SIW BM, its longitudinal size is reduced by 22.1 %. The compact BM will be an attractive candidate for future millimeter wave (mm-wave) 5G terminal application.","PeriodicalId":260591,"journal":{"name":"2021 IEEE MTT-S International Wireless Symposium (IWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129599427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信
小红书