Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122)最新文献

AlGaN/GaN solar-blind ultraviolet photodiodes on SiC substrate SiC衬底上的AlGaN/GaN太阳盲紫外光电二极管

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) Pub Date : 2000-08-07 DOI: 10.1109/CORNEL.2000.902541

G. Parish, M. Hansen, B. Moran, S. Keller, S. Denbaars, U. Mishra

引用次数: 2

A 16 W, 40% efficient, continuous wave, 4H SiC, L-band SIT 16w, 40%效率，连续波，4H SiC, l波段SIT

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) Pub Date : 2000-08-07 DOI: 10.1109/CORNEL.2000.902530

R. C. Clarke, A. Morse, P. Esker, W. Curtice

引用次数: 10

Wet etching and its application to the fabrication and characterization of AlGaN/GaN HFETs 湿法蚀刻及其在AlGaN/GaN hfet制备和表征中的应用

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) Pub Date : 2000-08-07 DOI: 10.1109/CORNEL.2000.902538

H. Maher, D. Disanto, G. Soerensen, M. Dvorak, T. MacElwee, J. Webb, C. Bolognesi

{"title":"Wet etching and its application to the fabrication and characterization of AlGaN/GaN HFETs","authors":"H. Maher, D. Disanto, G. Soerensen, M. Dvorak, T. MacElwee, J. Webb, C. Bolognesi","doi":"10.1109/CORNEL.2000.902538","DOIUrl":"https://doi.org/10.1109/CORNEL.2000.902538","url":null,"abstract":"We have developed a simple and reproducible UV photo-assisted wet etching process which can be carried out near room temperature and which does not appreciably degrade the GaN surface roughness from its original value for layers grown by molecular beam epitaxy on sapphire substrates: for example, AFM measurements indicate that the removal of 1000 /spl Aring/ of GaN only degrades the RMS surface roughness by /spl les/10 /spl Aring/. Etch rates of 20 A/min have been achieved with a UV power density of only 1.0 mW/cm/sup 2/ at /spl lambda/=365 nm. The etch rates and the good resultant surface quality make the etch technique attractive for gate recess etching and mesa isolation processes. The process is thus well-suited for the fabrication of high-quality AlGaN/GaN HFETs. The suitability of the technique to device fabrication is demonstrated by the implementation of high-performance 0.2 /spl mu/m gate devices with f/sub T/=43 GHz and f/sub MAX/=97 GHz using MBE-grown layers on sapphire substrates. We also demonstrate the applicability of the method for device fabrication using MOCVD-grown material on both sapphire and 4H-SiC substrates: the method is generally useful and non-specific as to the substrate used or the growth method.","PeriodicalId":256233,"journal":{"name":"Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127018782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs 氧化镓钆与氧化钆在氮化镓mosfet中用作介电体的比较

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) Pub Date : 2000-08-07 DOI: 10.1109/CORNEL.2000.902537

B. Gila, K. Lee, W. Johnson, F. Ren, C. Abernathy, S. Pearton, M. Hong, J. Kwo, J. Mannaerts, K. Anselm

{"title":"A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs","authors":"B. Gila, K. Lee, W. Johnson, F. Ren, C. Abernathy, S. Pearton, M. Hong, J. Kwo, J. Mannaerts, K. Anselm","doi":"10.1109/CORNEL.2000.902537","DOIUrl":"https://doi.org/10.1109/CORNEL.2000.902537","url":null,"abstract":"Amorphous gadolinium gallium oxide (GGG) and crystalline gadolinium oxide (Gd/sub 2/O/sub 3/) have been investigated as dielectrics for fabrication of GaN metal oxide semiconductor field effect transistors. GGG, deposited by e-beam evaporation in a molecular beam epitaxy (MBE) chamber was found to produce a breakdown field of 12 MV/cm indicating a low concentration of defects in the dielectric. MOSFETs fabricated with this dielectric showed modulation at forward voltages up to 3 V. Gd/sub 2/O/sub 3/ was deposited by molecular beam epitaxy using elemental Gd and an electron cyclotron resonance (ECR) oxygen plasma in an MBE chamber. Both reflection high energy electron diffraction (RHEED) and X-ray diffraction confirm the single crystal nature of the deposited Gd/sub 2/O/sub 3/. However, cross-sectional transmission electron microscopy indicates the presence of a large concentration of dislocations and other structural defects. These defects cause significant leakage in the Gd203 and necessitated the addition of an SiO/sub 2/ overlayer in order to reduce the gate leakage current in depletion mode devices. Using this double layer structure, devices with modulation at forward voltages up to 7 V were obtained, as compared to 3 V. For devices fabricated with GGG. Both dielectrics appear to be stable at temperatures up to 950-1000/spl deg/C as determined by X-ray diffraction and Auger electron spectroscopy.","PeriodicalId":256233,"journal":{"name":"Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132786021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Passivation of AlGaN/GaN heterostructures with silicon nitride for insulated gate transistors 用氮化硅钝化绝缘栅极晶体管用AlGaN/GaN异质结构

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) Pub Date : 2000-08-07 DOI: 10.1109/CORNEL.2000.902540

T. Prunty, J. Smart, E.N. Chumbes, B. Ridley, L. Eastman, J. Shealy

引用次数: 39

Fabrication and characterization of RTD-HBT inverter RTD-HBT逆变器的制作与特性研究

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) Pub Date : 2000-08-07 DOI: 10.1109/CORNEL.2000.902517

C. Lin, K. Yang, A.F. Gonza'lez, J. East, P. Mazumder, G. Haddad, D. Chow, L. D. Warren, H. Dunlap, J. A. Roth, S. Thomas

引用次数: 2

A ballistic quantum device for potential use in analog-to-digital conversion 一种可能用于模数转换的弹道量子装置

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) Pub Date : 2000-08-07 DOI: 10.1109/CORNEL.2000.902513

P. Debray, V. Zverev, M. Rahman, E. Strobel, E. Kohn, B. Vinter

引用次数: 0

Determination of small-signal parameters of GaN-based HEMTs 氮化镓基hemt小信号参数的确定

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) Pub Date : 2000-08-07 DOI: 10.1109/CORNEL.2000.902526

E. Chigaeva, W. Walthes, Dirk Wiegner, M. Grozing, F. Schaich, N. Wieser, Manfred Berroth, O. Breitschadel, L. Kley, B. Kuhn, F. Scholz, Heinz Schweizer, O. Ambacher, J. Hilsenbeck

引用次数: 71

Current-injection characterization of breakdown in AlGaN/GaN MODFETs AlGaN/GaN modfet击穿的电流注入特性

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) Pub Date : 2000-08-07 DOI: 10.1109/CORNEL.2000.902522

E. Alekseev, P. Nguyen-Tan, D. Pavlidis, M. Micovic, D. Wong, C. Nguyen

{"title":"Current-injection characterization of breakdown in AlGaN/GaN MODFETs","authors":"E. Alekseev, P. Nguyen-Tan, D. Pavlidis, M. Micovic, D. Wong, C. Nguyen","doi":"10.1109/CORNEL.2000.902522","DOIUrl":"https://doi.org/10.1109/CORNEL.2000.902522","url":null,"abstract":"Al/sub 0.3/Ga/sub 0.7/N/GaN MODFETs grown on sapphire substrates by RF-assisted MBE demonstrate excellent DC as well as high-frequency characteristics. Power characteristics of these transistors measured on-wafer at 8 GHz showed excellent correlation with the biasing voltages and currents. Since the use of higher drain bias generally leads to higher output power and the maximum drain bias is limited by the drain-source and/or drain-gate breakdowns these need to be evaluated in order to investigate to what extent they limit the power performance of GaN-based MODFETs. The breakdown characteristics of AlGaN/GaN MODFETs were studied by employing the current-injection technique and the gate-drain and drain-source breakdown voltages were obtained as a function of the drain current and the substrate temperature. At room temperature devices demonstrated drain-source and gate-drain breakdown voltages of 70 and 80 V, respectively. Based on the gate bias and temperature dependence of the breakdown voltages, the source of breakdown is attributed to the thermionic emission in the gate-drain diode.","PeriodicalId":256233,"journal":{"name":"Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127633158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Power limits of polarization-induced AlGaN/GaN HEMT's 极化诱导AlGaN/GaN HEMT的功率限制

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) Pub Date : 2000-08-07 DOI: 10.1109/CORNEL.2000.902545

L. Eastman, B. Green, J. Smart, V. Tilak, E. Chumbes, Hyungtak Kim, T. Prunty, N. Weimann, R. Dimitrov, O. Ambacher, W. Schaff, J. Shealy

引用次数: 2