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2010 International Conference on Advanced Optoelectronics and Lasers最新文献

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The commercially available version of Shack-Hartmann wavefront sensor 商用版本的沙克-哈特曼波前传感器
2010 International Conference on Advanced Optoelectronics and Lasers Pub Date : 2010-11-11 DOI: 10.1109/CAOL.2010.5634209
P. Romanov, V. E. Zavalova, A. Kudryashov, A. Rukosuev
{"title":"The commercially available version of Shack-Hartmann wavefront sensor","authors":"P. Romanov, V. E. Zavalova, A. Kudryashov, A. Rukosuev","doi":"10.1109/CAOL.2010.5634209","DOIUrl":"https://doi.org/10.1109/CAOL.2010.5634209","url":null,"abstract":"The development of low-cost Shack-Hartmann wavefront sensor (SHWS), based on USB2-interface of CMOS camera, is presented in this report. The description of main principle of SHWS and example of wavefront measurements are given. A comparative characteristics and spheres of sensors applications, based on USB-2 and IEEE-1394 types interfaces, are shown below. But certainly there are advantages and disadvantages of each type of these sensors. That is why each type has more suitable spheres of application. This is the subject of our discussions.","PeriodicalId":254986,"journal":{"name":"2010 International Conference on Advanced Optoelectronics and Lasers","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132726994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental investigations of influence of additionally induced polarization of the ground state of atoms on multiphoton transitions 原子基态外加诱导极化对多光子跃迁影响的实验研究
2010 International Conference on Advanced Optoelectronics and Lasers Pub Date : 2010-11-11 DOI: 10.1109/CAOL.2010.5634212
I. Bondar’, V. Suran
{"title":"Experimental investigations of influence of additionally induced polarization of the ground state of atoms on multiphoton transitions","authors":"I. Bondar’, V. Suran","doi":"10.1109/CAOL.2010.5634212","DOIUrl":"https://doi.org/10.1109/CAOL.2010.5634212","url":null,"abstract":"Multiphoton transitions in the Ba atom are experimentally studied in the presence of strong nonresonant radiation that additionally polarizes atoms in the ground state. It is found that the additionally induced polarization of Ba atoms leads to an increase in the probability of multiphoton transitions from this state.","PeriodicalId":254986,"journal":{"name":"2010 International Conference on Advanced Optoelectronics and Lasers","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123688448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
XeCl-excilamp with the capacitance discharge 带电容放电的XeCl-excilamp
2010 International Conference on Advanced Optoelectronics and Lasers Pub Date : 2010-11-11 DOI: 10.1109/CAOL.2010.5634196
S. Anufrik, A. Volodenkov, K. Znosko
{"title":"XeCl-excilamp with the capacitance discharge","authors":"S. Anufrik, A. Volodenkov, K. Znosko","doi":"10.1109/CAOL.2010.5634196","DOIUrl":"https://doi.org/10.1109/CAOL.2010.5634196","url":null,"abstract":"Average power of radiation made 0.6 W (frequency of pulses repetition F=50 Hz), and efficiency of 3 %. Excilamp brightness was 30 mW/cm<sup>2</sup> approximately. With 1cm<sup>3</sup> of active medium power radiation 74 mW/cm<sup>3</sup> was obtained, that exceeds radiation power with 1cm<sup>3</sup> for glow discharge excilamps at low pressure.","PeriodicalId":254986,"journal":{"name":"2010 International Conference on Advanced Optoelectronics and Lasers","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116431262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonlinear LBO and BBO crystals for extreme light sources 用于极端光源的非线性LBO和BBO晶体
2010 International Conference on Advanced Optoelectronics and Lasers Pub Date : 2010-11-11 DOI: 10.1109/CAOL.2010.5634241
A. Kokh, T. Bekker, K. Kokh, N. Kononova, V. Vlezko, P. Villeval, S. Durst, D. Lupinski
{"title":"Nonlinear LBO and BBO crystals for extreme light sources","authors":"A. Kokh, T. Bekker, K. Kokh, N. Kononova, V. Vlezko, P. Villeval, S. Durst, D. Lupinski","doi":"10.1109/CAOL.2010.5634241","DOIUrl":"https://doi.org/10.1109/CAOL.2010.5634241","url":null,"abstract":"Using the approach of heat filed symmetry change and rotation LBO crystals of more than 1.5 kg of weight were grown from MoO3-containing melt-solution. High quality optical elements up to 65 mm in diameter were produced. At the same time with this approach we obtained high quality BBO crystals about 400 g using NaBaBO3 flux. Elements with apertures up to 30×30 mm2 were produced. The progress in the dimensions of grown crystals provides the opportunity to use them in laser systems of multi petawatt and exawatt power level.","PeriodicalId":254986,"journal":{"name":"2010 International Conference on Advanced Optoelectronics and Lasers","volume":"9 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116865426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High power wavegude CO2 lasers for technologies and medicine 用于技术和医学的高功率波长CO2激光器
2010 International Conference on Advanced Optoelectronics and Lasers Pub Date : 2010-11-11 DOI: 10.1109/CAOL.2010.5634260
V. Panchenko, V. Golubev, V. Vasiltsov, E. Egorov
{"title":"High power wavegude CO2 lasers for technologies and medicine","authors":"V. Panchenko, V. Golubev, V. Vasiltsov, E. Egorov","doi":"10.1109/CAOL.2010.5634260","DOIUrl":"https://doi.org/10.1109/CAOL.2010.5634260","url":null,"abstract":"The ongoing development of the laser technologies of material processing places heavy demands on the sources of laser radiation, such as reliability, high beam quality, low operating costs, long service life, and low price.","PeriodicalId":254986,"journal":{"name":"2010 International Conference on Advanced Optoelectronics and Lasers","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128892984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties InGaN/GaN/Si电致发光异质结构设计和量子阱厚度对其发光和激光性能的影响
2010 International Conference on Advanced Optoelectronics and Lasers Pub Date : 2010-11-11 DOI: 10.1109/CAOL.2010.5634186
V. N. Pavlovskii, E. Lutsenko, A. Danilchyk, V. Zubialevich, A. Muravitskaya, G. P. Yablonskii, H. Kalisch, R. H. Jansen, B. Schineller, M. Heuken
{"title":"Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties","authors":"V. N. Pavlovskii, E. Lutsenko, A. Danilchyk, V. Zubialevich, A. Muravitskaya, G. P. Yablonskii, H. Kalisch, R. H. Jansen, B. Schineller, M. Heuken","doi":"10.1109/CAOL.2010.5634186","DOIUrl":"https://doi.org/10.1109/CAOL.2010.5634186","url":null,"abstract":"Employing a strain-reducing layer stack between Si substrate and MQW layers as well as optimization of quantum well thicknesses of InGaN/GaN/Si MQW electroluminescent heterostructures led to disappearance of cracks and pinholes, to reduction of the laser threshold down to 75 kW/cm2 at 433 nm under N2 laser emission excitation.","PeriodicalId":254986,"journal":{"name":"2010 International Conference on Advanced Optoelectronics and Lasers","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123788861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microchip laser with active output mirror 带有主动输出反射镜的微芯片激光器
2010 International Conference on Advanced Optoelectronics and Lasers Pub Date : 2010-11-11 DOI: 10.1109/CAOL.2010.5634228
V. Kiyko, V. Kislov, E. Ofitserov
{"title":"Microchip laser with active output mirror","authors":"V. Kiyko, V. Kislov, E. Ofitserov","doi":"10.1109/CAOL.2010.5634228","DOIUrl":"https://doi.org/10.1109/CAOL.2010.5634228","url":null,"abstract":"Presented is an operator model of a microchip laser with an active output mirror based on Fabry-Perot interferometer. Considered are apodizing properties of a mirror-interferometer composed of two spherical, semi-transparent reflectors with variable gap between those. Proposed is an operator model describing the mirror under diffraction approximation. Results of numerical simulation of the micro-chip laser with variable thermal lens and active output mirror are presented. It is shown that use of an active interferometer as an output cavity mirror enables to control mode composition and power of output radiation at divergence close to diffraction limit.","PeriodicalId":254986,"journal":{"name":"2010 International Conference on Advanced Optoelectronics and Lasers","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114255253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Localized states and oscillations induced by coherent interaction of waves in nonlocal media 非局部介质中波的相干相互作用引起的局域态和振荡
2010 International Conference on Advanced Optoelectronics and Lasers Pub Date : 2010-11-11 DOI: 10.1109/CAOL.2010.5634249
Svitlana Bugaychuk, R. Conte, E. Kozij, O. Kolesnyk, G. Klimusheva
{"title":"Localized states and oscillations induced by coherent interaction of waves in nonlocal media","authors":"Svitlana Bugaychuk, R. Conte, E. Kozij, O. Kolesnyk, G. Klimusheva","doi":"10.1109/CAOL.2010.5634249","DOIUrl":"https://doi.org/10.1109/CAOL.2010.5634249","url":null,"abstract":"We show the dynamical four-wave mixing in a nonlocal medium is described by the complex Ginzburg-Landau equation. Two regimes are considered for this FWM: (i) the self-oscillations and (ii) stationary localized states in the form of sech-function for the intensity pattern in the medium volume. The applications of such FWM in all-optical switching and optical phase conjugation are examined.","PeriodicalId":254986,"journal":{"name":"2010 International Conference on Advanced Optoelectronics and Lasers","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132785360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Real time monitoring of micro and nano particles, blood phantoms in situ by optical micro resonance methods 利用光学微共振方法实时监测微纳米颗粒、血影
2010 International Conference on Advanced Optoelectronics and Lasers Pub Date : 2010-11-11 DOI: 10.1109/CAOL.2010.5634195
V. Saetchnikov, E. A. Tcheriavskaia, G. Schweiger, A. Ostendorf
{"title":"Real time monitoring of micro and nano particles, blood phantoms in situ by optical micro resonance methods","authors":"V. Saetchnikov, E. A. Tcheriavskaia, G. Schweiger, A. Ostendorf","doi":"10.1109/CAOL.2010.5634195","DOIUrl":"https://doi.org/10.1109/CAOL.2010.5634195","url":null,"abstract":"Methods and instrumentation based on resonance frequency dependence of dielectric micro resonators on the surrounding medium is being developed as a real-time one-way disposable sensor for a number of parameters of nano particles and modeling blood in situ.","PeriodicalId":254986,"journal":{"name":"2010 International Conference on Advanced Optoelectronics and Lasers","volume":"252 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129923168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Measurements and modeling of optical distortions relaxation in high power Nd:glass lasers 高功率钕玻璃激光器光学畸变弛豫的测量和建模
2010 International Conference on Advanced Optoelectronics and Lasers Pub Date : 2010-11-11 DOI: 10.1109/CAOL.2010.5634201
V. E. Zavalova, A. Kudryashov, A. Rukosuev
{"title":"Measurements and modeling of optical distortions relaxation in high power Nd:glass lasers","authors":"V. E. Zavalova, A. Kudryashov, A. Rukosuev","doi":"10.1109/CAOL.2010.5634201","DOIUrl":"https://doi.org/10.1109/CAOL.2010.5634201","url":null,"abstract":"Evolution of wavefront aberrations in high-power solid-state laser (Nd:glass laser) was measured and analyzed. The measurements were performed by Shack-Hartmann wavefront (SHW) sensor. The technical opportunities of such type sensors both device for measurements and element of Adaptive Optical Systems to correct for wavefront aberrations are demonstrated in this report. Analysis of damping distortions shows that its damping has thermal nature and can be described well by non-stationary equation of diffusion at pumping and cooling of Nd:glass-slab. Theoretical estimations of aberrations dynamics is in good agreement with the experimental data.","PeriodicalId":254986,"journal":{"name":"2010 International Conference on Advanced Optoelectronics and Lasers","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133342151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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