Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997最新文献_第8页

Effect of crystal defects on minority carrier diffusion lengths in 6H SiC [solar cells] 晶体缺陷对6H SiC[太阳能电池]载流子扩散长度的影响

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.654251

S. Hubbard, M. Tabib-Azar, S. Bailey, G. Rybicki, P. Neudeck, R. Raffaelle

{"title":"Effect of crystal defects on minority carrier diffusion lengths in 6H SiC [solar cells]","authors":"S. Hubbard, M. Tabib-Azar, S. Bailey, G. Rybicki, P. Neudeck, R. Raffaelle","doi":"10.1109/PVSC.1997.654251","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654251","url":null,"abstract":"Minority-carrier diffusion lengths in n-type 6H-SiC solar cells were measured using the planar electron-beam induced current (EBIC) technique. Experimental values of electron beam current, EBIC and beam voltage were obtained for n-type SIC with a carrier concentration of 1.7E17 cm/sup -3/. This data was fit to theoretically calculated diode efficiency curves, and the diffusion length and metal layer thickness extracted. The extracted hole diffusion length ranged from 0.68 /spl mu/m to 1.46 /spl mu/m. The error for these values was /spl plusmn/15%. Additionally, we introduce a novel variation of the planar technique. This \"planar mapping\" technique measures diffusion length along a linescan creating a map of diffusion length versus position. This map is overlaid onto the EBIC image of the linescan, allowing direct visualization of the effect of crystal defects on minority carrier diffusion length. Diffusion length maps of both n and p-type 6H SiC show that large micropipe defects severely limit the minority carrier diffusion length, reducing it well below 0.1 /spl mu/m inside large defects.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127876172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Large-area Silicon-Film/sup (TM)/ manufacturing under the PVMaT program PVMaT计划下的大面积硅膜/sup (TM)/制造

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.654297

J. Rand, Y. Bai, J.C. Checchi, J. Culik, D. H. Ford, C. L. Kendall, P. Sims, R. Hall, A. Barnett

引用次数: 3

Properties of ZnTe:Cu thin films and CdS/CdTe/ZnTe solar cells ZnTe:Cu薄膜和CdS/CdTe/ZnTe太阳能电池的性能

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.654122

J. Tang, D. Mao, T. Ohno, V. Kaydanov, J. Trefny

引用次数: 18

Thermosensoric localization of defects in CIS solar modules CIS太阳能组件缺陷的热感定位

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.654150

W. Gross, J. Zettner, H. Scheuerpflug, T. Hierl, M. Schulz, F. Karg

引用次数: 1

A new method for the determination of the minority carrier lifetime based on a biased OCVD technique [solar cells] 基于偏置OCVD技术的少数载流子寿命测定新方法[太阳能电池]

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.654061

C. J. Bruno, M.G. Martinez Bogado, J. Plá, J. C. Durán

引用次数: 0

Electronic and mechanical properties of Ge films grown on glass substrates 玻璃基板上生长的 Ge 薄膜的电子和机械特性

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.654144

R. Ahrenkiel, S. P. Ahrenkiel, M. Al‐Jassim, R. Venkatasubramanian

{"title":"Electronic and mechanical properties of Ge films grown on glass substrates","authors":"R. Ahrenkiel, S. P. Ahrenkiel, M. Al‐Jassim, R. Venkatasubramanian","doi":"10.1109/PVSC.1997.654144","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654144","url":null,"abstract":"As germanium is closed lattice matched to GaAs, it a suitable substrate for epitaxial growth. In the quest for inexpensive substrates, thin-film Ge grown on glass is an attractive candidate if suitable grain growth can be achieved. Here we describe Ge films that are deposited by an e-beam evaporator on glass and are approximately 2000 /spl Aring/ thick. The films were annealed at 500/spl deg/C and 600/spl deg/C to improve the quality of the material. The growth was done in three steps with 1000 /spl Aring/ of Ge, 70 /spl Aring/ of Sb, and followed by another 1000 /spl Aring/ of Ge. Sb is an n-type dopant in Ge and is included to enhance grain growth. The best films contained the Sb layer and hole concentrations between 1.4/spl times/10/sup 15/ to 1.6/spl times/10/sup 17/ cm/sup -3/. The largest hole mobility measured was 30.6 cm/sup 2//Vs in the 1.4/spl times/10/sup 15/ p-type sample. The electron lifetime was measured by ultra-high frequency photoconductive decay and the best lifetimes were in the 30- to 40-ns range. Scanning-electron microscope and transmission-electron microscope studies indicated a polycrystalline grain structure with grain size comparable to the film thickness.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131151957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

The morphology of CdS thin films deposited on SnO/sub 2/-coated glass substrates [for solar cells] SnO/ sub2 /-镀膜玻璃基板上沉积CdS薄膜的形貌[用于太阳能电池]

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.654148

F. Hasoon, M. Al‐Jassim, A. Swartzlander, P. Sheldon, A. Al-Douri, A. Alnajjar

引用次数: 0

The dependence of reactively sputtered ZnO electronic properties on growth parameters for use as buffer layers in CuIn/sub x/Ga/sub 1-x/Se/sub 2/ solar cells 在CuIn/sub x/Ga/sub 1-x/Se/sub 2/太阳能电池中作为缓冲层的反应溅射ZnO电子性能对生长参数的依赖性

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.654108

R. Bhatt, H. Sankaranarayanan, C. Ferekides, D. Morel

引用次数: 2

18.3% efficient silicon solar cells for space applications 用于空间应用的18.3%高效硅太阳能电池

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.654266

G. Crotty, P. Verlinden, M. Cudzinovic, R. M. Swanson, R. Crane

引用次数: 9

Improved FF of CIGS thin-film mini-modules with Zn(O,S,OH)/sub x/ buffer by post-depostion light soaking 用Zn(O,S,OH)/sub x/缓冲液沉积后光浸泡法改善CIGS薄膜微型模块的FF

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.654094

K. Kushiya, M. Tachiyuki, T. Kase, Y. Nagoya, T. Miura, D. Okumura, M. Satoh, I. Sugiyama, O. Yamase

引用次数: 3