Physics and Simulation of Optoelectronic Devices XXVII最新文献

Physics and Simulation of Optoelectronic Devices XXVII Pub Date : 2019-05-07 DOI: 10.1117/12.2531049

引用次数: 0

Modulating trion population to control light amplification in a colloidal quantum-dot device (Conference Presentation) 在胶体量子点器件中调制离子种群以控制光放大(会议报告)

Physics and Simulation of Optoelectronic Devices XXVII Pub Date : 2019-03-08 DOI: 10.1117/12.2509305

Junhong Yu, Cuong Dang

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First-principles analysis of the optoelectronic properties of defective gallium nitride (Conference Presentation) 缺陷氮化镓光电特性的第一性原理分析(会议报告)

Physics and Simulation of Optoelectronic Devices XXVII Pub Date : 2019-03-08 DOI: 10.1117/12.2514852

S. Sharifzadeh

{"title":"First-principles analysis of the optoelectronic properties of defective gallium nitride (Conference Presentation)","authors":"S. Sharifzadeh","doi":"10.1117/12.2514852","DOIUrl":"https://doi.org/10.1117/12.2514852","url":null,"abstract":"III-Nitrides form a class of wide bandgap semiconductors that have broad applications in optoelectronics technology due to their relatively large band gap, high carrier drift velocity and high breakdown voltage. In particular, GaN and its alloys are promising as component materials in solid-state lighting, radio-frequency, and power electronics. However, these materials generally grow with high defect densities, which can substantially degrade their electronic and optical properties. Therefore, an accurate and detailed knowledge of the influence of defects on their electronic structure will be central to the design of new high-performance materials. Here, we take a density functional theory (DFT) and many-body perturbation theory (MBPT) approach to describe the excited-states of defective GaN. Utilizing MBPT within the GW/BSE approximation, we develop an approach to systematically identify defects, and their associated trap state energies. For a +1 charged nitrogen vacancy within bulk GaN, the predicted bandstructure indicates that this particular defect results in the formation of shallow defect states with trap state energies near the band edges. However, analysis of the electron-hole correlation function reveals that the low-energy excitations are comprised of a mixed bulk-like and defect-like character with significant exciton binding energies (~ 0.1 eV). We discuss the implications of these defect-induced-states for the electron transport and optical properties of GaN.","PeriodicalId":249147,"journal":{"name":"Physics and Simulation of Optoelectronic Devices XXVII","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133718737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effective refractive-index approximation: a link between structural and optical disorder of planar resonant optical structures (Conference Presentation) 有效折射率近似:平面共振光学结构的结构与光学失序之间的联系(会议报告)

Physics and Simulation of Optoelectronic Devices XXVII Pub Date : 2019-03-08 DOI: 10.1117/12.2508021

Ž. Gačević, N. Vukmirović

引用次数: 0

Quantum-dot devices for high-performance telecom applications (Conference Presentation) 用于高性能电信应用的量子点器件(会议报告)

Physics and Simulation of Optoelectronic Devices XXVII Pub Date : 2019-03-08 DOI: 10.1117/12.2515448

J. Reithmaier

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Purcell enhancement in practical nanoLEDs and nanolasers (Conference Presentation) 实用纳米oled和纳米激光器的Purcell增强(会议报告)

Physics and Simulation of Optoelectronic Devices XXVII Pub Date : 2019-03-08 DOI: 10.1117/12.2514996

A. Fiore, B. Romeira, V. Dolores-Calzadilla, A. Higuera-Rodriguez, D. Heiss, M. Smit

引用次数: 0

Photodetection at or below 1 micron wavelengths (Conference Presentation) 波长在1微米或以下的光探测(会议简报)

Physics and Simulation of Optoelectronic Devices XXVII Pub Date : 2019-03-08 DOI: 10.1117/12.2510627

M. Woodson, S. Estrella, Kenneth A. Hay, Angsuman Roy, K. Sun, J. Morgan, A. Beling, R. J. Baker, D. Renner, M. Mashanovitch

{"title":"Photodetection at or below 1 micron wavelengths (Conference Presentation)","authors":"M. Woodson, S. Estrella, Kenneth A. Hay, Angsuman Roy, K. Sun, J. Morgan, A. Beling, R. J. Baker, D. Renner, M. Mashanovitch","doi":"10.1117/12.2510627","DOIUrl":"https://doi.org/10.1117/12.2510627","url":null,"abstract":"Links at 1 micron offer key advantages over longer wavelength links. Both ultra-stable, low noise Nd:YAG lasers and high power efficiency, temperature-stable GaAs lasers operate at wavelengths around 1 micron. These components are particularly beneficial for quantum optical systems and links which require stability over a wide range of temperatures, such as are required in avionics. However, a key component missing in these 1 micron photonic links is a high-power photodiode receiver with high linearity and high quantum efficiency. Freedom Photonics and the University of Virginia have collaborated to develop photodiodes which fill this need. The photodetectors are based on an optimized vertically illuminated modified uni-traveling carrier (MUTC) photodiode technology. We report devices with quantum efficiencies in excess of 80% at 1064 nm, with a 3-dB bandwidth of 28 GHz, for a 20µm diameter device. The same device size handles very high power, with a 1-dB compression of >16 dBm RF power at a 64-mA photocurrent. These photodiodes have a major impact on peak performance of a photonic link, supporting high link gain and large bandwidths. Additionally, the high linearity of these devices minimizes noise and signal distortion, maximizing spurious-free dynamic range (SFDR). These are the first photodiodes of this type which have been packaged and made commercially available for this target wavelength.","PeriodicalId":249147,"journal":{"name":"Physics and Simulation of Optoelectronic Devices XXVII","volume":"513 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132491104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Twin photonic oscillators as the unit cell of topological lasers and superradiant emitters (Conference Presentation) 双光子振荡器作为拓扑激光器和超辐射发射器的单元胞(会议报告)

Physics and Simulation of Optoelectronic Devices XXVII Pub Date : 2019-03-08 DOI: 10.1117/12.2509300

V. Kovanis

引用次数: 0

Light-current characteristic shape transformation in quantum-dot lasers (Conference Presentation) 量子点激光器的光电流特征形状变换(会议报告)

Physics and Simulation of Optoelectronic Devices XXVII Pub Date : 2019-03-08 DOI: 10.1117/12.2509087

L. Asryan

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Hamiltonian analysis of metal cavity light sources: nonradiative decay due to the metal cavity (Conference Presentation) 金属腔光源的哈密顿分析:由金属腔引起的非辐射衰减(会议报告)

Physics and Simulation of Optoelectronic Devices XXVII Pub Date : 2019-03-08 DOI: 10.1117/12.2512206

D. Deppe

引用次数: 0