Технология и конструирование в электронной аппаратуре最新文献

{"title":"Highly informative integrated method for determining the type of engine oil","authors":"A. V. Mamykin, A. Kukla, L. Matvienko, H. Dorozinska, V. Maslov, G. Dorozinsky","doi":"10.15222/tkea2019.3-4.36","DOIUrl":"https://doi.org/10.15222/tkea2019.3-4.36","url":null,"abstract":"The presence of correlation dependences between the type of motor oil and its refractometric and electrophysical characteristics (refractive index, specific resistance and dielectric constant) is experimentally shown. Methods for determining the type of engine oil are proposed, based on the measurement of these characteristics, as well as prototypes of portable measuring devices that implement these methods. Impedance spectroscopy was used to determine the resistivity and dielectric constant, and a device based on the effect of surface plasmon resonance was used to determine the refractive index. It is shown that the accuracy of identification of the type of motor oil increases significantly with simultaneous consideration of all above physical characteristics. It is shown that this complex method can most accurately detect, on the one hand, purely synthetic motor oils, on the other hand, oils with a mineral component (semi-synthetic and mineral). The results of the studies can be used to identify the type of motor oil as well as to detect forgery.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126309384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photodetector resistant to background light noise with extended dynamic range of input signals","authors":"V. M. Lipka, V. Ryukhtin, Y. Dobrovolsky","doi":"10.15222/tkea2021.3-4.03","DOIUrl":"https://doi.org/10.15222/tkea2021.3-4.03","url":null,"abstract":"Measurement of periodic optical information signals in the background light noise with a photodetector with extended dynamic range is an urgent task of modern electronics and thus has become the aim of this study.\u0000To increase the dynamic range of the photodetector, a new version of the automatic gain control (AGC) circuit has been developed, which consists of an AGC controller, an output photodetector amplifier and an AGC detector. \u0000The authors measured the dynamic range of the photodetector when receiving optical radiation with a wavelength of 1064 nm in the power range from 2.10–8 to 2.10–5 W at a modulation frequency of 20 kHz with the AGC on. Under these conditions, the dynamic range of the photodetector was found to be up to 67 dB. If the AGC was off, the dynamic range did not exceed 30 dB.\u0000Thus, the study made it possible to create a photodetector with an extended dynamic range up to 67 dB based on a new version of the AGC circuit. The design of the photodetector allowed choosing a useful signal of a particular modulation frequency in the frequency range from 3 to 45 kHz and effectively suppresses the frequencies caused by optical interference in the low frequency range from the frequency of the input signal of constant amplitude up to 3 kHz inclusive. This compensates the current up to 15 mA, which is equivalent to the power of light interference of about 15 mW. \u0000Further research should address the issues of reliability of the proposed photodetector design and optimization of its optical system. \u0000The photodetector can be used in geodesy and ambient air quality monitoring.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132191913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Adaptive algorithm for reducing pulse noise level in images from CCTV cameras","authors":"А. V. Sadchenko, O. Kushnirenko, A. Troyanskiy, Yu. A. Savchuk","doi":"10.15222/tkea2021.1-2.21","DOIUrl":"https://doi.org/10.15222/tkea2021.1-2.21","url":null,"abstract":"An optical signal is usually converted into an electrical one by using photosensitive matrices with a large number of discrete elements based on charge-coupled device (CCD) technology or CMOS technology.\u0000One of the disadvantages of CCD and CMOS technologies is the impulse conversion noise that appears on digitized images, impairing visual perception and significantly reducing the likelihood of correct identification in pattern recognition tasks. Traditionally, impulse noise is removed from images using median filters with a fixed aperture within each iteration of full-format processing. However, such filters reduce the sharpness of the reconstructed image at high noise levels or insufficiently suppress the interference under the same noise conditions. These setbacks call for a need to develop an adaptive median filtering algorithm, which would produce a reconstructed image as a joint result of processing with median filters with different apertures.\u0000The essence of this algorithm is to select image areas with different noise levels and process these areas with filters with different apertures. As an objective criterion for assessing the efficiency of the proposed filtering algorithm, the authors used the criterion of the maximum correlation coefficient between noise-free and non-noisy images at various values of the noise variance. The mathematical modeling performed in this study allowed finding that with an increase in the impulse noise variance, the gain of the adaptive median filtering algorithm increases exponentially, in comparison with the algorithms using the filters with a fixed aperture value.\u0000The proposed algorithm can be used for pre-preprocessing images intended for recognition by machine vision systems, scanning text, and improving subjective image characteristics, such as sharpness and contrast.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114705962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modulator for implementation of amplitude modulation of many components","authors":"I. Horbatyi, U. S. Carp, I. Tsymbaliuk","doi":"10.15222/tkea2021.3-4.30","DOIUrl":"https://doi.org/10.15222/tkea2021.3-4.30","url":null,"abstract":"The authors consider various anti-noise techniques in systems using digital signals, in particular QAM (quadrature amplitude modulation) signals. To increase the noise immunity of a system, it is proposed to use amplitude modulation of many components (AMMС). The advantages of this approach are demonstrated. The principles of AMMС signal formation are explained. The frequency efficiency, energy efficiency, and information efficiency of such signals are theoretically calculated. Different types of digital modulation are compared, the data being presented as a table, and a conclusion is made about a possible practical implementation of the modulator for AMMC signal formation. \u0000Structural and functional diagrams of the modulator for AMMC implementation are proposed. The study formulates basic operating principles of such a device, which are used to propose a design option of the modulator. The paper describes particular aspects of creating the main units of the modulator. The authors investigate the characteristics of such a device, particularly the spectrum of the output signal. \u0000The obtained research results allow drawing a conclusion that the device complies with the formulated implementation principles of the declared modulation type. A general conclusion is made that the manufactured modulator is suitable for the AMMC. The device is proposed to be used in modern digital communication systems, such as mobile communication systems.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123882420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Calculation of discrete correlation functionin facet systems of techical vision","authors":"V. Borovytsky, V. Antonenko","doi":"10.15222/tkea2022.1-3.08","DOIUrl":"https://doi.org/10.15222/tkea2022.1-3.08","url":null,"abstract":"The paper proposes a facet vision system composed from identical facet elements. Each facet element contains an optical system, several photodetectors, a preamplifier, and a universal microcontroller. In such a system, all facet elements operate independently of each other. Each facet element performs fast measurements of the angular velocity of objects in its field of view by calculating the discrete correlation functions of the signals from the photodetectors. The paper considers the possibility of using economical microcontrollers in facet elements for fast calculation of the discrete correlation functions. The authors perform a comparative analysis of the techniques based on the direct calculation and the calculation with fast Fourier transform. The investigation of the corresponding program code for microcontrollers in assembly language is done with calculations of the number of machine instructions and their execution time. The study confirms that economical universal microcontrollers are able to perform fast measurements by finding the maximum values of discrete correlation functions. In the case of receiving signals from 4 photodetectors, the calculation time is less than 10 milliseconds for input data arrays of 384 elements and less than 1.2 milliseconds for input data arrays of 128 elements. These results make the proposed facet vision systems applicable in navigation, orientation, and collision avoidance with moving and stationary objects in automatic vehicles, including unmanned aerial vehicles.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121494552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Coordination of welding pulse parameters with electrode pressure program and electrophysical processes in welding contact","authors":"Oleksandr F. Bondarenko","doi":"10.15222/tkea2019.5-6.51","DOIUrl":"https://doi.org/10.15222/tkea2019.5-6.51","url":null,"abstract":"Resistance welding is an important technological operation for many modern industries, including mechanical engineering, electronics and instrument making. Micro resistance welding is used in producing of micro-structures for critical purposes, such as electronic components, circuits, etc. It is obvious that welded joints in such structures should be characterized by such high quality indicators as the absence of solid metal splashes, burnouts, faulty fusions, and the repetitiveness of dimensions of welding spots, which are achieved by coordinating the parameters of welding current pulses with electrophysical processes in welding contact. \u0000Thus, in this paper, the authors analyze electrophysical processes taking place in the welding contact and the effect of the welding current pulse parameters on these processes, in order to mutually coordinate them. This allows specifying the law of pulse power change, which makes it possible to take into account the features of electrophysical processes in the welding contact to the full extent. The smooth rise of the pulse power, obtained according to the exponent law with selection of the optimal exponent n value, provides gradual input of energy required for welding during the most unstable phase of primary contact formation. \u0000Due to the flat top of the welding pulse, the constant energy input to the contact is maintained during a rather stable phase of welding core formation. Finally, the smooth pulse fall obtained by selecting the optimal exponent m value of the power change law provides the proper cooling of the welding spot, which guarantees the strength and uniformity of the joint structure. To achieve the best welding quality, the recommendations are given regarding the formation of rise and fall of the pulse, depending on specific welding conditions, parameters of the welded parts and requirements for the obtained joints. \u0000The paper shows that it is a useful practice to coordinate the pulse power change law with the program of changing the pressure of the electrodes, and with changing the resistance of the welding zone. The proposed example of coordination between welding pulse power change, welding electrode pressure and electrophysical processes in the welding contact (resistance of the welding zone) is substantiated in terms of the influence of the electrode pressure on the welding process. This practice can provide the highest quality of welded joints and thus the highest quality of the end products manufactured by welding.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129833150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A new approach to increasing the sensitivity of a gas sensor based on nanocrystalline silicon carbide films","authors":"A. Semenov, D. Lubov","doi":"10.15222/tkea2021.5-6.11","DOIUrl":"https://doi.org/10.15222/tkea2021.5-6.11","url":null,"abstract":"It was shown the possibility of increasing the sensitivity of a gas sensor based on nanocrystalline SiC films by using a scheme of a two-component sensing element, one of which is an n-nc-SiC film with electronic conductivity, and the second is an p-nc-SiC film with hole conductivity. It is shown that due to the opposite polarity of changes in resistance in the films under the simultaneous action of gases, the difference in relative resistance changes ∆ in the n-nc-SiC and p-nc-SiC films will always be greater than in each film separately. The expediency of using a two-component sensing element of a gas sensor based on nc-SiC films with electron and hole conduction is shown.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"305 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130016890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On the 50th anniversary of the Scientific Research Company “Electron-Carat”","authors":"M. Vakiv","doi":"10.15222/tkea2022.4-6.65","DOIUrl":"https://doi.org/10.15222/tkea2022.4-6.65","url":null,"abstract":"The article is dedicated to the Scientific Research Company “Electron-Carat”, which was founded in 1972 as the Lviv Research and Development Institute of Materials — the leading developer of the state-of-art materials. Nowadays, the SRC “Electron-Carat” is leading industrial institution of Ukrainian specialized on search, investigation, technological development and small-scale production of materials for functional electronics, in particular nano-, micro-, opto-, acoustic-, cryo-, magneto- and quantum electronics. The SRC “Electron-Carat” is a certified scientific organization included in the state register. Some of the company’s laboratories have been recognized as national heritage of Ukraine.\u0000The main scientific and technological scope of SRC “Electron-Carat” includes production of single-crystal epitaxial layers of complex oxides using the liquid-phase epitaxy method; production of epitaxial semiconductor structures based on A3B5 compounds by MOCVD and liquid-phase epitaxy methods; precision mechanical processing of single-crystal materials; vacuum deposition of metal and dielectric coatings; property research and parameter control of materials; production of silicon wafers; manufacture of electronic components based on ceramic and thick-film technologies.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124419307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improving parameters of planar pulse diode using gettering","authors":"","doi":"10.15222/tkea2021.3-4.50","DOIUrl":"https://doi.org/10.15222/tkea2021.3-4.50","url":null,"abstract":"Pulse diodes are widely used as part of high-frequency pulse circuits. However, it should be noted that the cost of pulsed diodes remains relatively high, due to the low yield of suitable devices when they are sorted according to the criteria of reverse current and rated capacitance. This is largely caused by the significant dependence of their electrical parameters on the density of structural defects and impurities in the active regions of the diodes.\u0000The study is devoted to identifying the causes and mechanisms of the low yield of diodes when they are sorted according to the criteria of reverse current and rated capacitance, as well as determining the possibility of using gettering operations to increase the yield of suitable devices.\u0000It is found that the low yield of the diodes is caused by the structural defects that are formed in the active areas of the diodes during high-temperature technological operations. The paper describes the mechanisms in which the structural defects affect the electrical parameters of diodes.\u0000The proposed technology for manufacturing diode structures using gettering of structural impurity defects by means of high-temperature annealing in an inert medium before the thermal oxidation operation is considered.\u0000It is shown that high-temperature annealing of silicon structures before thermal oxidation eliminates packing defects formed during epitaxy, cleans the active areas of the diodes from nuclei of defects and unwanted impurities, and prevents the formation of structural defects in them during the subsequent high-temperature thermal operations. The use of the proposed technology allows increasing the yield of suitable diode structures by 8.9% when sorted according to rated capacitance and by 9.4% when sorted according to reverse current, the level of reverse currents reducing by 2—9 times.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126013602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electronic characteristics of CdS quantum dots with defects","authors":"I. Kupchak, D. Korbutyak, N. Serpak","doi":"10.15222/tkea2020.3-4.28","DOIUrl":"https://doi.org/10.15222/tkea2020.3-4.28","url":null,"abstract":"Using the density functional theory and the generalized gradient approximation, we calculated the atomic structure, the density of electronic states, and the optical absorption spectra of CdS quantum dots containing intrinsic defects — a cadmium vacancy VCd and an interstitial sulfur atom SI, and substitutional impurities — zinc and copper in place of the atom cadmium — ZnCd and CuCd, respectively. The calculations were performed for the Cd33S33 cluster corresponding to the so-called “magic” size of the quantum dot. This size has a minimum of dangling bonds at the surface and allows the using of such a cluster without the passivation. The structural relaxation during the formation of such defects and the distribution of the wave function of the state corresponding to the top of the valence band are analyzed in details. It has been shown that the cadmium vacancy forms local states in the band gap of CdS nanocrystals, and can serve as centers of radiative recombination. Other defects form energy levels in the depths of the valence band or near its top, but whose energy positions do not correspond to the band maxima in the experimental photoluminescence spectra of CdS quantum dots, both undoped and doped with zinc. The calculated optical absorption spectra demonstrate a strong peak in the region of fundamental absorption of CdS for a cluster containing a substitutional impurity of CuCd, in contrast to other systems where no such peaks are observed. In addition, the replacement of the cadmium atom with copper leads to a decrease in the number of chemical bonds to three and, accordingly, to the largest relaxation among the systems studied. This feature is caused by the crystal structure inhomogeneity of copper sulfide CuxS, which, depending on stoichiometry, can be either a semiconductor or a metal.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134083954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}