发布求助
文献互助 智能选刊 最新文献

2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843)最新文献

筛选
英文 中文
Source of electromagnetic signal on the base of explosive devices 爆炸装置基座上的电磁信号源
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843) Pub Date : 1900-01-01 DOI: 10.1109/CRMICO.2004.183349
V. A. Soshenko
{"title":"Source of electromagnetic signal on the base of explosive devices","authors":"V. A. Soshenko","doi":"10.1109/CRMICO.2004.183349","DOIUrl":"https://doi.org/10.1109/CRMICO.2004.183349","url":null,"abstract":"The test equipment for plasma jet excitation and test results for plasma antennas excited by means of spark-gap converter and RF explosive magnetic generator with a plasma antenna are presented.","PeriodicalId":226991,"journal":{"name":"2004 14th International Crimean Conference \"Microwave and Telecommunication Technology\" (IEEE Cat. No.04EX843)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125655613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Videocontrol signals coding device 视频控制信号编码装置
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843) Pub Date : 1900-01-01 DOI: 10.1109/CRMICO.2004.183198
V. Ivanisenko, A. V. Britkov, I. V. Makeenko
{"title":"Videocontrol signals coding device","authors":"V. Ivanisenko, A. V. Britkov, I. V. Makeenko","doi":"10.1109/CRMICO.2004.183198","DOIUrl":"https://doi.org/10.1109/CRMICO.2004.183198","url":null,"abstract":"Technical decisions in the coding of black-and-white pictures by means of analog video signal transformation into digital signal, transposition of line fragments and back transformation with the help of digital analog transformation have been considered.","PeriodicalId":226991,"journal":{"name":"2004 14th International Crimean Conference \"Microwave and Telecommunication Technology\" (IEEE Cat. No.04EX843)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125987411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microelectromechanical analog phase shifter simulation 微机电模拟移相器仿真
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843) Pub Date : 1900-01-01 DOI: 10.1109/CRMICO.2004.183274
I. Golubeva, Yuriy Prokopenko, V. Kazmirenko, Yuriy Poplavko
{"title":"Microelectromechanical analog phase shifter simulation","authors":"I. Golubeva, Yuriy Prokopenko, V. Kazmirenko, Yuriy Poplavko","doi":"10.1109/CRMICO.2004.183274","DOIUrl":"https://doi.org/10.1109/CRMICO.2004.183274","url":null,"abstract":"A study on optimal design of a centimeter and millimeter wave MEMS phase shifter is presented. It is shown that micro movement of dielectric and metal bodies over the microstrip or coplanar line can provide full phase modulation without introducing extra loss.","PeriodicalId":226991,"journal":{"name":"2004 14th International Crimean Conference \"Microwave and Telecommunication Technology\" (IEEE Cat. No.04EX843)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121744530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hall effect sensor in high-power microwave field 大功率微波场霍尔效应传感器
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843) Pub Date : 1900-01-01 DOI: 10.1109/CRMICO.2004.183394
A. Budai, A. P. Grinchuk, V. P. Knysh, V. Svetlov
{"title":"Hall effect sensor in high-power microwave field","authors":"A. Budai, A. P. Grinchuk, V. P. Knysh, V. Svetlov","doi":"10.1109/CRMICO.2004.183394","DOIUrl":"https://doi.org/10.1109/CRMICO.2004.183394","url":null,"abstract":"The results of experimental research of the Hall effect sensor in a high intensity microwave field are presented.","PeriodicalId":226991,"journal":{"name":"2004 14th International Crimean Conference \"Microwave and Telecommunication Technology\" (IEEE Cat. No.04EX843)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134321557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Passivation of the silicon semiconductor devices and microwave frequency attachments with the double layer dielectric films from yttrium oxide and dysprosium oxide 用氧化钇和氧化镝的双层介电膜钝化硅半导体器件和微波频率附件
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843) Pub Date : 1900-01-01 DOI: 10.1109/CRMICO.2004.183336
V. Rozhkov, M. Rodionov, A. Pashin, A. M. Guryanov
{"title":"Passivation of the silicon semiconductor devices and microwave frequency attachments with the double layer dielectric films from yttrium oxide and dysprosium oxide","authors":"V. Rozhkov, M. Rodionov, A. Pashin, A. M. Guryanov","doi":"10.1109/CRMICO.2004.183336","DOIUrl":"https://doi.org/10.1109/CRMICO.2004.183336","url":null,"abstract":"The recombination properties of silicon passivated with double layer dielectric films of yttrium oxide and dysprosium oxide have been investigated. The values of effective lifetime and surface recombination velocity of the nonequilibrium charge carriers on the interface of the rare-earth elements/silicon-oxide have been defined.","PeriodicalId":226991,"journal":{"name":"2004 14th International Crimean Conference \"Microwave and Telecommunication Technology\" (IEEE Cat. No.04EX843)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131495516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation of high-conducting nanostructures in low-conducting diamond-like carbon films using SPM-lithograph 利用spm光刻技术在低导电性类金刚石薄膜中形成高导电性纳米结构
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843) Pub Date : 1900-01-01 DOI: 10.1109/CRMICO.2004.183313
V. Frolov, V. Konov, S. Pimenov, Zavedeev Ev
{"title":"Formation of high-conducting nanostructures in low-conducting diamond-like carbon films using SPM-lithograph","authors":"V. Frolov, V. Konov, S. Pimenov, Zavedeev Ev","doi":"10.1109/CRMICO.2004.183313","DOIUrl":"https://doi.org/10.1109/CRMICO.2004.183313","url":null,"abstract":"Low-conducting hydrogenated diamond-like carbon (DLC) a-C:H films were examined for the purpose of nanometer-scaled modifications under the action of local electrical field. The capabilities of SPM technique for preparation of conducting nanostructures in the low-conducting a-C:H films have been demonstrated for the first time.","PeriodicalId":226991,"journal":{"name":"2004 14th International Crimean Conference \"Microwave and Telecommunication Technology\" (IEEE Cat. No.04EX843)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131631022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Retrieval of scanning Auger microscopy images 扫描俄歇显微镜图像的检索
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843) Pub Date : 1900-01-01 DOI: 10.1109/CRMICO.2004.183311
K. Gaikovich, V. F. Dryakhlushin
{"title":"Retrieval of scanning Auger microscopy images","authors":"K. Gaikovich, V. F. Dryakhlushin","doi":"10.1109/CRMICO.2004.183311","DOIUrl":"https://doi.org/10.1109/CRMICO.2004.183311","url":null,"abstract":"The development of micro- and nanoelectronics needs chemical diagnostics of structures with nanometre resolution. The progress in scanning probe microscopy, in particular, in the method of scanning Auger microscopy (SAM) (S.T. Purcell et al, Nanotechnology, vol. 12, pp. 168-172, 2001; F.A. Stevie et al, J. Vac. Sci. Technol. B, vol. 17, no. 6, pp. 2476-2482, 1999), could solve this problem. The depth resolution of this method achieves by now a sub-nanometer barrier (S. Hofmann, Rep. Prog. Phys., vol. 61, pp. 827-888, 1998), but the lateral resolution amounts to no better than tens of nanometers. The goal of this work is to improve the lateral resolution of SAM by image processing using Tikhonov's method of deconvolution that takes into account the probe transfer function.","PeriodicalId":226991,"journal":{"name":"2004 14th International Crimean Conference \"Microwave and Telecommunication Technology\" (IEEE Cat. No.04EX843)","volume":"516 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132967112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the causes of catastrophic degradation of silicon MOS-transistor parameters 硅mos晶体管参数突变退化原因的研究
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843) Pub Date : 1900-01-01 DOI: 10.1109/CRMICO.2004.183333
O. Kulinich, M. Glauberman, G. Chemeresuk, I. Yatsunsky
{"title":"Investigation of the causes of catastrophic degradation of silicon MOS-transistor parameters","authors":"O. Kulinich, M. Glauberman, G. Chemeresuk, I. Yatsunsky","doi":"10.1109/CRMICO.2004.183333","DOIUrl":"https://doi.org/10.1109/CRMICO.2004.183333","url":null,"abstract":"The paper aims to discover the causes of the catastrophic degradation of the parameters of silicon MOS-transistors formed by ordinary planar technology. The basic causes of degradation are as follows: (1) thermal compression contact rupture, which can be explained by the formation of intermetallic compounds in the contact area, resulting in brittleness of the contacts; (2) failure of metallic interconnections and contact pad integrity, resulting from not observing the photolithography technological conditions as well as from the presence of a developed defect structure on the silicon surface and the formation of silicide compounds.","PeriodicalId":226991,"journal":{"name":"2004 14th International Crimean Conference \"Microwave and Telecommunication Technology\" (IEEE Cat. No.04EX843)","volume":"193 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132983234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MESFET amplifier with second harmonic tuning 具有二次谐波调谐的MESFET放大器
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843) Pub Date : 1900-01-01 DOI: 10.1109/CRMICO.2004.183114
V. Krizhanovski, D. Makarov
{"title":"MESFET amplifier with second harmonic tuning","authors":"V. Krizhanovski, D. Makarov","doi":"10.1109/CRMICO.2004.183114","DOIUrl":"https://doi.org/10.1109/CRMICO.2004.183114","url":null,"abstract":"An experimental prototype of an amplifier with tuning on the second harmonics was built and investigated. It is shown that there are variants of tuning for ensuring high efficiency at low transistor supply voltage.","PeriodicalId":226991,"journal":{"name":"2004 14th International Crimean Conference \"Microwave and Telecommunication Technology\" (IEEE Cat. No.04EX843)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125197947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The influence of coherent and incoherent transmission on I-V characteristics of RTD 相干和非相干传输对RTD I-V特性的影响
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843) Pub Date : 1900-01-01 DOI: 10.1109/CRMICO.2004.183316
I. I. Abramov, I. Goncharenko
{"title":"The influence of coherent and incoherent transmission on I-V characteristics of RTD","authors":"I. I. Abramov, I. Goncharenko","doi":"10.1109/CRMICO.2004.183316","DOIUrl":"https://doi.org/10.1109/CRMICO.2004.183316","url":null,"abstract":"The influence of coherent and incoherent transmission on the RTD's I-V characteristics was investigated. We assume scattering rate dependence upon all resonant levels when calculating optical potential. Calculations were performed using a combined single-band model with scattering and one based on self-consistent solution of the Schrodinger and Poisson equations.","PeriodicalId":226991,"journal":{"name":"2004 14th International Crimean Conference \"Microwave and Telecommunication Technology\" (IEEE Cat. No.04EX843)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130844929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信
小红书