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Optoèlektronika i poluprovodnikovaâ tehnika最新文献

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PHOTOLUMINESCENCE PROPERTIES OF SILICON NANOPARTICLES IN MULTILAYERED (SiOx-SiOy)n STRUCTURES WITH POROUS INSULATING LAYERS 具有多孔绝缘层的多层(SiOx-SiOy)n结构中硅纳米颗粒的光致发光特性
Optoèlektronika i poluprovodnikovaâ tehnika Pub Date : 2018-12-15 DOI: 10.15407/jopt.2018.53.169
K. Michailovska
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引用次数: 0
COMPONENT ANALYSIS OF PHONON SPECTRA DYCHROIDISM IN UNIAXIALLY DEFORMED SILICON CRYSTAL 单轴形变硅晶体中声子光谱异色性的成分分析
Optoèlektronika i poluprovodnikovaâ tehnika Pub Date : 2018-12-15 DOI: 10.15407/jopt.2018.53.273
I. Matyash
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引用次数: 0
Semiconductor photovoltaics: сurrent state and actual directions of research 半导体光伏:现状与实际研究方向
Optoèlektronika i poluprovodnikovaâ tehnika Pub Date : 2018-12-15 DOI: 10.15407/jopt.2018.53.013
V. Kostylyov
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引用次数: 0
APPLICATION OF SPIN-COATED CHALCOGENIDE FILMS: MANUFACTURING, PROPERTIES, APPLICATIONS (REVIEW) 旋涂硫化物薄膜的应用:制造、性能、应用(综述)
Optoèlektronika i poluprovodnikovaâ tehnika Pub Date : 2018-12-15 DOI: 10.15407/jopt.2018.53.124
L. Revutska
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引用次数: 0
MOLECULAR PLASMONICS – A NOVEL RESEARCH FIELD IN MATERIALS SCIENCE AND SENSING. APPLICATIONS AND THEORETICAL BACKGROUND (REVIEW) 分子等离子体动力学是材料科学和传感领域的一个新兴研究领域。应用与理论背景(综述)
Optoèlektronika i poluprovodnikovaâ tehnika Pub Date : 2018-12-15 DOI: 10.15407/jopt.2018.53.038
V. Chegel
{"title":"MOLECULAR PLASMONICS – A NOVEL RESEARCH FIELD IN MATERIALS SCIENCE AND SENSING. APPLICATIONS AND THEORETICAL BACKGROUND (REVIEW)","authors":"V. Chegel","doi":"10.15407/jopt.2018.53.038","DOIUrl":"https://doi.org/10.15407/jopt.2018.53.038","url":null,"abstract":"","PeriodicalId":220473,"journal":{"name":"Optoèlektronika i poluprovodnikovaâ tehnika","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125354288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DIRECT SURFACE-RELIEF GRATING RECORDING USING SELENIUM LAYERS 使用硒层的直接表面起伏光栅记录
Optoèlektronika i poluprovodnikovaâ tehnika Pub Date : 2018-12-15 DOI: 10.15407/jopt.2018.53.240
A. Meshalkin
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引用次数: 0
OPTOELECTRONIC NEFLOMETRIC METER OF THE ATMOSPHERIC ENVIRONMENT METEOPARAMETERS 光电测光仪的大气环境气象参数
Optoèlektronika i poluprovodnikovaâ tehnika Pub Date : 2018-12-15 DOI: 10.15407/jopt.2018.53.161
V. S. Kretulis
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引用次数: 0
THE MECHANISMS OF THE APPEARANCE OF VISIBLE PARASITIC LUMINESCENCE IN THE ULTRAVIOLET LED’s 365 nm 在365nm紫外光LED中可见寄生发光出现的机制
Optoèlektronika i poluprovodnikovaâ tehnika Pub Date : 2018-12-15 DOI: 10.15407/jopt.2018.53.181
V. Veleschuk
{"title":"THE MECHANISMS OF THE APPEARANCE OF VISIBLE PARASITIC LUMINESCENCE IN THE ULTRAVIOLET LED’s 365 nm","authors":"V. Veleschuk","doi":"10.15407/jopt.2018.53.181","DOIUrl":"https://doi.org/10.15407/jopt.2018.53.181","url":null,"abstract":"","PeriodicalId":220473,"journal":{"name":"Optoèlektronika i poluprovodnikovaâ tehnika","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115796490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MONOPOLAR PHOTOCONDUCTIVITY OF THE INVERSION LAYER AND “SLOW”-SURFACE LEVELS IN THE STRUCTURES OF MACROPOROUS AND MONOCRYSTALLINE SILICON IN CONDITIONS OF STRONG SURFACE LIGHTNING 强表面闪电条件下大孔和单晶硅结构反转层和“慢”表面水平的单极光电导率
Optoèlektronika i poluprovodnikovaâ tehnika Pub Date : 2018-12-15 DOI: 10.15407/jopt.2018.53.268
N. I. Karas
{"title":"MONOPOLAR PHOTOCONDUCTIVITY OF THE INVERSION LAYER AND “SLOW”-SURFACE LEVELS IN THE STRUCTURES OF MACROPOROUS AND MONOCRYSTALLINE SILICON IN CONDITIONS OF STRONG SURFACE LIGHTNING","authors":"N. I. Karas","doi":"10.15407/jopt.2018.53.268","DOIUrl":"https://doi.org/10.15407/jopt.2018.53.268","url":null,"abstract":"","PeriodicalId":220473,"journal":{"name":"Optoèlektronika i poluprovodnikovaâ tehnika","volume":"257 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116065822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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