Journal of the Russian Universities. Radioelectronics最新文献_第5页

Transistors for Solid-State Microwave Switches (A Review) 固态微波开关用晶体管(综述)

Journal of the Russian Universities. Radioelectronics Pub Date : 2023-07-06 DOI: 10.32603/1993-8985-2023-26-3-6-31

E. M. Torina, V. Kochemasov, A. Safin

{"title":"Transistors for Solid-State Microwave Switches (A Review)","authors":"E. M. Torina, V. Kochemasov, A. Safin","doi":"10.32603/1993-8985-2023-26-3-6-31","DOIUrl":"https://doi.org/10.32603/1993-8985-2023-26-3-6-31","url":null,"abstract":"Introduction. The characteristics of solid-state microwave switches are subject to different requirements depending on the application area and technical problems to be solved. No versatile solution exists that could satisfy all requirements at once. The desire to improve the parameters of switches has led to the emergence of devices based on various technologies. In order to elucidate the current trends and future prospects in the field of switch technologies, semiconductor devices that form the basis of switch circuits should be considered.Aim. To review transistor types used in solid-state switches.Materials and methods. The search and selection of literature sources for review was based on the chronological principle. The search depth for considering the parameters of finished components was no more than 10 years, for considering technologies and structural solutions – more than 10 years. This choice was explained by our desire to trace the history of development and approaches to the creation of semiconductor devices that have led to the emergence of the modern component base. The final array of sources comprised scientific publications presenting factual information on the objects under consideration.Results. The types, structures, materials, characteristics and manufacturing technologies of transistors used in switches are considered. The achievable parameters of the switches based on the considered devices are presented. Conclusion. The choice of a particular transistor type for switches depends on the requirements for the parameters and performance characteristics of the final device. At present, transistor solutions for switches are dominated by field-effect transistors (FETs) of various types: GaAs and GaN transistors with a high electron mobility (HEMT) and Si CMOS FETs implemented by standard as well as silicon-on-insulator and silicon-on-sapphire technologies. The conducted literature review has revealed prospects for the development of technologies based on BiCMOS heterojunction bipolar transistors.","PeriodicalId":217555,"journal":{"name":"Journal of the Russian Universities. Radioelectronics","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129832888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thin Vanadium Dioxide Films for Use in Microwave Keys with Electric Control 用于电控微波键的二氧化钒薄膜

Journal of the Russian Universities. Radioelectronics Pub Date : 2023-07-06 DOI: 10.32603/1993-8985-2023-26-3-48-57

Ilya D. Neustroev, Tatyana K. Legkova, Andrey A. Tsymbalyuk, A. E. Komlev

{"title":"Thin Vanadium Dioxide Films for Use in Microwave Keys with Electric Control","authors":"Ilya D. Neustroev, Tatyana K. Legkova, Andrey A. Tsymbalyuk, A. E. Komlev","doi":"10.32603/1993-8985-2023-26-3-48-57","DOIUrl":"https://doi.org/10.32603/1993-8985-2023-26-3-48-57","url":null,"abstract":"Introduction. In view of the ever-tightening bandwidth requirements for wireless communication systems, the use of tunable or switching devices based on microwave keys is becoming increasingly popular. Currently, the development of microwave keys based on nonlinear materials, such as vanadium dioxide, is a relevant research direction. The keys based on this material are distinguished by a planar and simple design, thus being suitable for creating microwave devices using hybrid technology.Aim. To study the properties of thin vanadium dioxide films and to develop a microwave switch with electrical switching on their basis.Materials and methods. Experimental samples of thin vanadium dioxide films were obtained by magnetron sputtering. The phase transition parameters of the samples obtained experimentally were used in computer simulation of a planar two-electrode structure of a microwave key by the finite element method.Results. Experimental samples of vanadium dioxide films were manufactured, and the dependences of their resistivity on temperature were studied. The resistance of the obtained vanadium dioxide films was found to change threefold. A microwave key design based on vanadium dioxide films was developed. The formation of a currentconducting channel in vanadium dioxide films was simulated when a control voltage was applied. The threshold voltage of the element was estimated depending on its design parameters.Conclusion. The use of experimental data as a basis for computer simulation made it possible to determine the threshold values of currents depending on the topology and design of the proposed microwave key. The results of simulating the key structure showed the formed conductive channel to have clearly defined boundaries in terms of distribution of both current density and temperature across the film surface.","PeriodicalId":217555,"journal":{"name":"Journal of the Russian Universities. Radioelectronics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130547621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tracking of Maneuvering Targets Using a Variable Structure Multiple Model Algorithm 基于变结构多模型算法的机动目标跟踪

Journal of the Russian Universities. Radioelectronics Pub Date : 2023-07-06 DOI: 10.32603/1993-8985-2023-26-3-77-89

Le Minh Hoang, A. Konovalov, Dao Van Luc

{"title":"Tracking of Maneuvering Targets Using a Variable Structure Multiple Model Algorithm","authors":"Le Minh Hoang, A. Konovalov, Dao Van Luc","doi":"10.32603/1993-8985-2023-26-3-77-89","DOIUrl":"https://doi.org/10.32603/1993-8985-2023-26-3-77-89","url":null,"abstract":"Introduction. In recent years, much attention has been paid to the development of trajectory filtering methods for tracking maneuvering targets. Multi-model (MM) algorithms are widely used for filtering maneuvering targets. Conventional MM algorithms are characterized by a fixed structure. However, highly maneuvering targets require a sufficiently large set of models covering the entire range of possible maneuvers, although an increase in the number of models cannot ensure an increase in the accuracy of tracking. To overcome these problems, multiple model algorithms with a variable structure (VSMM) were proposed. This article proposes two VSMM algorithms for tracking maritime targets performing a coordinated turn at constant speed. These are algorithms with a variable set of models based on adaptive grid and switching grid methods.Aim. To develop an adaptive trajectory tracking algorithm that uses a constant turn model to track maneuvering surface objects.Materials and methods. The resulting algorithm is based on the theory of grid adaptation in multi-model estimation methods and is used to estimate the components of the coordinate and velocity vectors of surface maneuvering targets. The algorithm efficiency was evaluated using computer statistical modeling in the MATLAB environment.Results. The structure of an adaptive VSMM algorithm was described. Simulations were carried out to confirm the algorithm efficiency. In the considered simulation scenarios, the algorithm produces effective estimates of the coordinate vectors and speed of surface maneuvering targets.Conclusion. Adaptive algorithms improve the efficiency of target tracking in comparison with multi-model algorithms with a fixed structure, at the same time as saving computational resources.","PeriodicalId":217555,"journal":{"name":"Journal of the Russian Universities. Radioelectronics","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126217330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Track Detection Algorithm Based on Trace Correlation Using Hough Transform 基于Hough变换的航迹相关的航迹检测算法

Journal of the Russian Universities. Radioelectronics Pub Date : 2023-05-02 DOI: 10.32603/1993-8985-2023-26-2-65-77

A. Monakov

引用次数: 0

Optimal Overall Dimensions of a Surface Acoustic Waves Ring Resonator 表面声波环形谐振器的最佳总体尺寸

Journal of the Russian Universities. Radioelectronics Pub Date : 2023-05-02 DOI: 10.32603/1993-8985-2023-26-2-89-100

S. Shevchenko, D. Mikhailenko

引用次数: 0

Comparing the Measured Frequency Characteristics of PCBs with Modal Reservation Before and After Failure at Different Temperatures 不同温度下具有模态保留的pcb失效前后频率特性的比较

Journal of the Russian Universities. Radioelectronics Pub Date : 2023-05-02 DOI: 10.32603/1993-8985-2023-26-2-37-51

A. Alhaj Hasan, T. Gazizov

引用次数: 0

Software Methodology for Data Control and Collection for Autonomous Monitoring Systems with a Large Amount of Generated Information on the Example of Software for a Hydrological Radiolocation System 具有大量生成信息的自主监测系统的数据控制和收集的软件方法——以水文无线电定位系统软件为例

Journal of the Russian Universities. Radioelectronics Pub Date : 2023-05-02 DOI: 10.32603/1993-8985-2023-26-2-52-64

I. S. Serdiukov, V. Veremyev, Van Tuan Nguyen

引用次数: 0

Classification of Arrhythmias Using a Pre-trained Deep Learning Model with Binary Images of Segmented ECG 基于分割心电二值图像的预训练深度学习模型对心律失常的分类

Journal of the Russian Universities. Radioelectronics Pub Date : 2023-05-02 DOI: 10.32603/1993-8985-2023-26-2-120-127

H. Solieman, S. Sali

引用次数: 0

Random Noise Suppression Method for Inertial Sensors Based on Complexing an AR Model and Adaptive SRUKF Kalman Filter under the PINS Alignment on a Stationary Platform 固定平台上基于AR模型复合和自适应SRUKF卡尔曼滤波的惯性传感器随机噪声抑制方法

Journal of the Russian Universities. Radioelectronics Pub Date : 2023-05-02 DOI: 10.32603/1993-8985-2023-26-2-101-119

Trong Yen Nguyen, Quoc Khanh Nguyen, Van Khoi Nguyen

引用次数: 0

Photo-sensitive Structures with Cascade Radiation Concentrators Based on Colloidal Quantum Dots of Metal Chalcogenides 基于金属硫族化合物胶体量子点的级联辐射聚光器光敏结构

Journal of the Russian Universities. Radioelectronics Pub Date : 2023-05-02 DOI: 10.32603/1993-8985-2023-26-2-78-88

I. I. Mikhailov, I. Lamkin, A. E. Degterev, M. M. Romanovich, M. Pavlova, M. A. Kurachkina, S. Tarasov, U. A. Kuzmina

引用次数: 0