{"title":"Active tuning of all-dielectric metasurfaces (Conference Presentation)","authors":"I. Staude","doi":"10.1117/12.2524296","DOIUrl":"https://doi.org/10.1117/12.2524296","url":null,"abstract":"Optical metasurfaces composed of designed Mie-resonant semiconductor nanoparticles arranged in a plane offer unique opportunities for controlling the properties of light fields [1]. Such metasurfaces can impose a spatially variant phase shift onto an incident light field, thereby providing control over its wave front with high transmittance efficiency. They can also e.g. act as polarizing optical elements, exhibit tailored nonlinear optical properties, or manipulate spontaneous emission processes of nanoscale emitters integrated in the metasurface architecture. However, the optical response of most semiconductor metasurfaces realized so far was permanently encoded into the metasurface structure during fabrication. Recently, a growing amount of research is concentrating on obtaining dynamic control of their optical response, with the aim of creating metasurfaces with functionalities that can be tuned, switched or programmed on demand. This talk will provide an overview of our recent advances in actively tunable Mie-resonant semiconductor metasurfaces. In particular, by integrating silicon metasurfaces into a liquid-crystal (LC) cell, we can tune their linear-optical transmittance and reflectance spectra by application of a voltage [2]. In our work, we utilize a LC photoalignment material [3] during the assembly of the LC metasurfaces, leading to a drastic improvement of the tuning performance and reproducibility. Based on this method, we demonstrate electrical tuning of LC-infiltrated dielectric metasurfaces at near-infrared and visible wavelengths. We show that these metasurfaces can be tuned into and out of the so-called Huygens’ regime of spectrally overlapping electric and magnetic dipolar resonances, which is characterized by near-unity resonant transmission, by application of an external voltage. In particular, we demonstrate tuning of the metasurface transmission from nearly opaque to nearly transparent at 1070 nm. Furthermore, making use of the strong modulation of the metasurface response in combination with patterned electrodes, we experimentally demonstrate a transparent metasurface display device operating in the visible spectral range. However, while the integration of silicon metasurfaces into nematic LC cells represents an efficient and versatile tuning approach showing large resonance shifts and strong tuning contrast, the switching times that can be achieved based on this approach are limited. Thus, as an alternative tuning mechanism allowing for ultrafast operation, we consider the transient changes of the optical properties of semiconductor materials when optically pumped by femtosecond laser pulses. These changes can lead to pronounced changes of the resonance condition for semiconductor metasurfaces at an ultrafast time scale. Our recent progress in ultrafast switching and tuning of semiconductor metasurfaces based on different material platforms and different physical mechanisms occurring at an ultrafast time scale wil","PeriodicalId":212985,"journal":{"name":"Integrated Optics: Design, Devices, Systems, and Applications V","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121877939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"2D polaritonics: fundamental limits and prospects for applications (Conference Presentation)","authors":"F. J. Abajo","doi":"10.1117/12.2524392","DOIUrl":"https://doi.org/10.1117/12.2524392","url":null,"abstract":"","PeriodicalId":212985,"journal":{"name":"Integrated Optics: Design, Devices, Systems, and Applications V","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115374580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Weilenmann, F. Ducry, S. Andermatt, B. Cheng, Mila Lewerenz, P. Ma, J. Leuthold, A. Emboras, M. Luisier
{"title":"Investigation of light-controlled filament dynamics in an electro-optical memristive photodetector (Conference Presentation)","authors":"C. Weilenmann, F. Ducry, S. Andermatt, B. Cheng, Mila Lewerenz, P. Ma, J. Leuthold, A. Emboras, M. Luisier","doi":"10.1117/12.2520596","DOIUrl":"https://doi.org/10.1117/12.2520596","url":null,"abstract":"The atom marks the ultimate scaling limit of Moore’s law, which is why atomic scale devices have attracted significant research interests from the electronics industry. To allow efficient co-integration of electronics and photonics, key components such as photodetectors [1] and modulators [2] should match the footprint of electronic devices. \u0000\u0000Here we demonstrate the first atomic-scale plasmonic photodetector where atoms rather than electrons are responsible for the device operation. The concept is based on a so-called electro-chemical metallization (ECM) cell where an atomic-scale conductive filament is partially dissolved through a plasmonic-thermal effect.\u0000\u0000To realize this new type of photodetectors, three different disruptive technologies have been combined into one single fabrication process. First, a 3-D photonic technology based on a modified self-aligned approach of local-oxidation of silicon (LOCOS) has been developed for silicon-on-insulator (SOI) substrates. This is an important step as it enables the integration of tip-based atomic-scale plasmonics within a low-loss bus photonic waveguide. Second, vertical 3-D adiabatic plasmonic couplers have been fabricated using two e-beam lithography steps and a lift off process. The resulting metal-insulator-metal (MIM) waveguide that houses the ECM cell consists of a silver and a platinum contact separated by a gap of 20 nanometers. Finally, the atomic scale junction has been realized by electroforming a silver filament inside the ECM cell. \u0000\u0000To investigate the operation principle of this photodetector, a 3-D axis-symmetrical finite element method (FEM) model has been implemented that is able to self-consistently simulate the device resistance as a function of the applied voltage and temperature. The electrochemical growth and dissolution of a conductive filament between two electrodes is modeled analogously to the work of Refs. [3] and [4]. The current through the device is approximated as a tunneling current whose dependence on the filament state can be derived from ab initio quantum transport calculations. The microscopic nature of the device is also taken into account by considering an electrical double layer at the metal-insulator interfaces that accurately describes the electrostatic potential distribution within the ECM device. The incorporation of first-principles results [5] allowed us to significantly reduce the number of free parameters.\u0000\u0000Two light-matter interaction mechanisms have been identified and investigated, namely the optical force acting on individual filament atoms and the heating through electromagnetic dissipation in the metal. An atomistic study based on real-time time-dependent density-functional theory revealed that the optical forces are not strong enough to move single atoms, which leaves the optically-induced temperature as the main driving force behind the filament dissolution. In this paper we will show through accurate device simulations that this is indeed what ","PeriodicalId":212985,"journal":{"name":"Integrated Optics: Design, Devices, Systems, and Applications V","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123930069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Silicon photonics (Conference Presentation)","authors":"M. Lipson","doi":"10.1117/12.2524684","DOIUrl":"https://doi.org/10.1117/12.2524684","url":null,"abstract":"In the past few years we went from the ability to miniaturize a handful of optical components to being able to print massive optical circuits on a microelectronic chip composed of thousands of optical components. These optical circuits enable one to control the flow of light in unprecedented ways and are opening the door to applications that only a decade ago were unimaginable. The idea for guiding light on silicon chip originated in the 1980s but only in the early 2000s the viability of the platform was demonstrated. I will describe the challenges that silicon photonic faced in its infancy, and the work that helped overcome these challenges. I will also discuss the current state of art of silicon photonics, where larger and more complex systems are now putting higher demands and setting up new challenges for the technology.","PeriodicalId":212985,"journal":{"name":"Integrated Optics: Design, Devices, Systems, and Applications V","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129106557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Novel design of microwave photonic transceivers for communication, radar, and surveillance systems on chip (Conference Presentation)","authors":"D. Onori, J. Azaña","doi":"10.1117/12.2520534","DOIUrl":"https://doi.org/10.1117/12.2520534","url":null,"abstract":"","PeriodicalId":212985,"journal":{"name":"Integrated Optics: Design, Devices, Systems, and Applications V","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126317565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}