{"title":"2D and 3D thermal flow sensor modelling — A comparative analysis","authors":"Ethan L. W. Gardner, A. De Luca, F. Udrea","doi":"10.1109/SMICND.2017.8101199","DOIUrl":"https://doi.org/10.1109/SMICND.2017.8101199","url":null,"abstract":"In this paper, 2-Dimensional and 3-Dimensional numerical models of a thermal flow sensor are discussed and compared against one another whilst being validated with experimental results. The models involve and couple three physics domains: electric, computational fluid dynamics and heat transfer. A comparative analysis has been performed focusing on the relative merits. Despite being less accurate, it is shown that 2D simulations can be used to portray device behavior whilst minimizing required computational resources whereas 3D models are needed to attain more accurate quantitative data. This ultimately provides the knowledge for objective driven modelling decisions.","PeriodicalId":204564,"journal":{"name":"2017 International Semiconductor Conference (CAS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132256651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"On the reproducibility of CMOS plasmonic mid-IR thermal emitters","authors":"A. De Luca, S.Z. Ali, F. Udrea","doi":"10.1109/SMICND.2017.8101168","DOIUrl":"https://doi.org/10.1109/SMICND.2017.8101168","url":null,"abstract":"In this paper we report about the reproducibility of CMOS plasmonic mid-IR thermal emitters. The electro-thermal transduction efficiency of the devices is shown not to depend on the plasmonic structure geometry and to be extremely reproducible from device to device, wafer to wafer and lot to lot. The small variation in terms of optical performance is investigated through numerical simulation and attributed to variations in planar and cross sectional dimensions of the fabricated structures.","PeriodicalId":204564,"journal":{"name":"2017 International Semiconductor Conference (CAS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122216459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Pachiu, C. Tibeica, A. Avram, M. Veca, T. Sandu, M. Popescu, R. Popa
{"title":"Processing and mechanical characterization of ultrananocrisytalline diamond films for MEMS applications","authors":"C. Pachiu, C. Tibeica, A. Avram, M. Veca, T. Sandu, M. Popescu, R. Popa","doi":"10.1109/SMICND.2017.8101210","DOIUrl":"https://doi.org/10.1109/SMICND.2017.8101210","url":null,"abstract":"We present the fabrication and mechanical characterization of MEMS-like structures from ultrananocrystalline diamond UNCD thin films. Various microstructures were fabricated using lithography and RIE processing, that is, by avoiding the sacrificial layer process. Stress assessments indicate the usability of UNCD films for MEMS components.","PeriodicalId":204564,"journal":{"name":"2017 International Semiconductor Conference (CAS)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123325279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Optimization of detection parameters on microarray Au-support for genotyping HPV strains","authors":"M. Banu, M. Simion, L. Savu, I. Farcasanu","doi":"10.1109/SMICND.2017.8101153","DOIUrl":"https://doi.org/10.1109/SMICND.2017.8101153","url":null,"abstract":"This paper describes the tests regarding the immobilization and hybridization of HPV oligonucleotides substrates on gold-coated microarray biochips and the amplification and cloning of DNA markers for HPV strains. An efficient probe immobilization was achieved using buffer without mercatpohexanol, whereas superior hybridization was achieved between the fluorescently labelled DNA and the probes with six-carbon spacer. Also, the amplicons corresponding to HPV 58, HPV 18, HPV 39, HPV 56, HPV 31, HPV 52, HPV 45, HPV 30, HPV 66 and HPV 35 have been successfully cloned into competent E. coli cells.","PeriodicalId":204564,"journal":{"name":"2017 International Semiconductor Conference (CAS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126781543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Study of piezoresistive and capacitive tactile sensors modeling and simulation for the best linearity with applications in modern microelectronics and walking analysis","authors":"A. Constantin, G. Gheorghe","doi":"10.1109/SMICND.2017.8101212","DOIUrl":"https://doi.org/10.1109/SMICND.2017.8101212","url":null,"abstract":"The paper presents an original concept for interfacing of tensoresistive and capacitive force sensors with applications in modern microelectronics systems. In the first part, the authors show the results and conclusions of a PSPICE simulation for an original patented circuit. The used simulations models were introduced in some circuit components corresponding to the realistic behavior implementation for each sensor. After these simulations there were revealed important aspects of dynamic behavior and there was proposed an optimal variant of the interface circuit. The second part presents a circuit which makes a negative capacitance for the best linearization of capacitive microsensors.","PeriodicalId":204564,"journal":{"name":"2017 International Semiconductor Conference (CAS)","volume":"94 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122071279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fabrication and characterization of thermal infrared sources","authors":"M. Kusko, G. Stan","doi":"10.1109/SMICND.2017.8101161","DOIUrl":"https://doi.org/10.1109/SMICND.2017.8101161","url":null,"abstract":"This work presents fabrication and characterization of thermal infrared sources based on chromium meander resistors obtained by microfabrication techniques. The infrared source fabrication is based on a simple technological approach which employs standard photolithography and wet etching processes. The electrical and optical characterization of the sources offered good results for 1 square mm area resistors based on 100 micrometers wide meanders.","PeriodicalId":204564,"journal":{"name":"2017 International Semiconductor Conference (CAS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129768785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Simulation of performance of thermopile based gas sensors applied for emission monitoring in thermal power plants","authors":"D. Randjelović, O. Jakšić, P. Poljak","doi":"10.1109/SMICND.2017.8101170","DOIUrl":"https://doi.org/10.1109/SMICND.2017.8101170","url":null,"abstract":"There is a growing demand for inexpensive and efficient gas sensors which have important applications in various areas including industrial safety and emission monitoring in coal fired and lignite based thermal power plants. Various air polluting and hazardous gases are emitted from power plants (Hydrogen (H2), Nitrogen Dioxide (NO2), Chlorine (Cl2), Carbon Dioxide (CO2), Sulfur Dioxide (SO2), etc). The main goal of this work is to study suitability of use of thermopile based MEMS sensors in systems for gas emission monitoring in thermal power plants using self-developed 1D analytical model.","PeriodicalId":204564,"journal":{"name":"2017 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130534669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design considerations for the source region of Schottky-barrier source-gated transistors","authors":"R. Sporea, S. Silva","doi":"10.1109/SMICND.2017.8101185","DOIUrl":"https://doi.org/10.1109/SMICND.2017.8101185","url":null,"abstract":"Source gated transistors (SGTs) are field effect devices with operating characteristics desirable for both analog and digital operation. Unlike in conventional transistors, the length of the source electrode, S, may play an important role in the behavior of SGTs. Optimizing the source region geometry according to mode of operation (dominant mechanism of current injection) leads to larger saturated current, increased switching speed, or higher gain.","PeriodicalId":204564,"journal":{"name":"2017 International Semiconductor Conference (CAS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126978953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Bojita, M. Purcar, C. Boianceanu, Edgar Tomas, V. Topa
{"title":"A study of adaptive mesh refinement techniques for an efficient capture of the thermo-mechanical phenomena in power integrated circuits","authors":"A. Bojita, M. Purcar, C. Boianceanu, Edgar Tomas, V. Topa","doi":"10.1109/SMICND.2017.8101201","DOIUrl":"https://doi.org/10.1109/SMICND.2017.8101201","url":null,"abstract":"Numerical simulation (le. based on the Finite Element Method — FEM) is an important design method and tool that allows prediction of failure position of the Double Diffused Metal-Oxide Semiconductor (DMOS) devices and a comparative analysis of the robustness of different metallization topologies with regard to Thermal Induced Plastic Metal Deformation (TPDM). As the dimension of analyzed components is very small and multiple physical phenomena occur, the finite element mesh size and density is very important for the accuracy and efficiency of the analysis method. The aim of this paper is to present an Adaptive Mesh Refinement (AMR) study for an efficient and accurate quantification by numerical simulation of the thermal induced stress and strain distribution in Power Integrated Circuits (PIC's). The study is demonstrated on simple 3D substructures commonly found at different high integration Bipolar CMOS-DMOS (BCD) technologies.","PeriodicalId":204564,"journal":{"name":"2017 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129210371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Topor, C. Ravariu, F. Babarada, S. Malin, A. Salageanu, I. Caras, D. Manuc, B. Patrichi
{"title":"Hardware and software contributions for optimized detection of fluorescent labeled cytokines","authors":"A. Topor, C. Ravariu, F. Babarada, S. Malin, A. Salageanu, I. Caras, D. Manuc, B. Patrichi","doi":"10.1109/SMICND.2017.8101221","DOIUrl":"https://doi.org/10.1109/SMICND.2017.8101221","url":null,"abstract":"Paper presents hardware improvements, step by step, besides to software refinements for the fluorescent labelled cytokines detection, associated to bacterial meningitis diagnosis. The hardware optimization firstly concerns the implementation of a versatile hardware device with the possibility to obtain the finally best solution. The software refinement includes Monte Carlo combined with denoising algorithms. The logistic curve extracted from fluorescent labelled cytokine images, reduces the error vector from 629 to 2.4, offering the best set of parameters.","PeriodicalId":204564,"journal":{"name":"2017 International Semiconductor Conference (CAS)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130208832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}