2017 IEEE Applied Power Electronics Conference and Exposition (APEC)最新文献_第2页

Active hot spot cooling of GaN transistors with electric field enhanced jumping droplet condensation 电场增强跃迁液滴冷凝GaN晶体管的主动热点冷却

2017 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2017-03-26 DOI: 10.1109/APEC.2017.7930805

T. Foulkes, Junho Oh, Patrick Birbarah, J. Neely, N. Miljkovic, R. Pilawa-Podgurski

引用次数: 18

H-Bridge transformerless inverter with common ground for single-phase solar-photovoltaic system 用于单相太阳能光伏系统的h桥共地无变压器逆变器

2017 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2017-03-26 DOI: 10.1109/APEC.2017.7931066

Y. Siwakoti, F. Blaabjerg

引用次数: 24

Multilevel modular switched-capacitor resonant converter with voltage regulation 具有电压调节的多电平模块化开关电容谐振变换器

2017 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2017-03-26 DOI: 10.1109/APEC.2017.7930677

Yanchao Li, B. Curuvija, X. Lyu, Dong Cao

引用次数: 46

Estimating switching losses for SiC MOSFETs with non-flat miller plateau region 非平坦米勒高原区SiC mosfet的开关损耗估计

2017 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2017-03-26 DOI: 10.1109/APEC.2017.7931075

Bharat Agrawal, Matthias Freindl, B. Bilgin, A. Emadi

引用次数: 32

Real DC capacitor-less active capacitors 真正的直流电容-无有源电容

2017 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2017-03-26 DOI: 10.1109/APEC.2017.7930611

Yunting Liu, F. Peng

引用次数: 6

Series-connected GaN transistors for ultra-fast high-voltage switch (>1kV) 超高速高压开关(>1kV)用串联GaN晶体管

2017 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2017-03-26 DOI: 10.1109/APEC.2017.7931130

J. Roig, G. Gomez, F. Bauwens, B. Vlachakis, Juan Rodríguez, Maria R. Rogina, Alberto Rodríguez, D. G. Lamar

引用次数: 6

High-efficiency high-power-density 380V/12V DC/DC converter with a novel matrix transformer 采用新型矩阵变压器的高效率、高功率密度380V/12V DC/DC变换器

2017 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2017-03-26 DOI: 10.1109/APEC.2017.7931039

Chao Fei, F. Lee, Qiang Li

{"title":"High-efficiency high-power-density 380V/12V DC/DC converter with a novel matrix transformer","authors":"Chao Fei, F. Lee, Qiang Li","doi":"10.1109/APEC.2017.7931039","DOIUrl":"https://doi.org/10.1109/APEC.2017.7931039","url":null,"abstract":"Isolated high output current DC/DC converters are critical for future data center power architecture. LLC converters with matrix transformer are suitable for these applications due to its high efficiency and high power density. Different matrix transformer structures are investigated. Flux cancellation can be utilized to reduce core size and loss. Synchronous rectifiers and output capacitors can be integrated into the secondary windings to minimize leakage and termination loss. To further improve the current design practice, several efforts have been made and a detailed design procedure is provided in this paper. A novel matrix transformer structure is proposed to integrate four elemental transformers into one magnetic core with simple four-layer PCB windings, fully utilize the available PCB copper and space, and further reduce core loss. The proposed matrix transformer is superior to the state-of-art, due to the much reduced core loss, integrated magnetics and simple four-layer PCB winding. With the proposed matrix transformer, LLC converter can achieve both high efficiency and high power density by operating at MHz. A 1MHz 380V/12V 800W LLC converter with GaN devices is demonstrated. The prototype can fit into the quarter-brick footprint and achieves a peak efficiency of 97.6% and a power density of 900W/inch3.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124131490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

6.78 MHz self-oscillating parallel resonant converter based on GaN technology 基于GaN技术的6.78 MHz自振荡并联谐振变换器

2017 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2017-03-26 DOI: 10.1109/APEC.2017.7930912

Ricardo Bonache-Samaniego, C. Olalla, L. Martínez-Salamero, D. Maksimović

{"title":"6.78 MHz self-oscillating parallel resonant converter based on GaN technology","authors":"Ricardo Bonache-Samaniego, C. Olalla, L. Martínez-Salamero, D. Maksimović","doi":"10.1109/APEC.2017.7930912","DOIUrl":"https://doi.org/10.1109/APEC.2017.7930912","url":null,"abstract":"This paper describes the design of a 6.78 MHz self-oscillating parallel resonant power converter for wireless power transfer applications. By sensing just the polarity of the tank inductor current to generate the switch control signals, the system is able to auto-start and self-oscillate at the desired frequency only by applying power to the input port. Different current sensing techniques, including a current sensing transformer and a series resistor followed by a high-speed differential amplifier, are compared based on bandwidth limitations and noise rejection considerations. Furthermore, delay-compensation networks are included in order to mitigate effects of the propagation delays added by signal processing components in the feedback path. It is shown that the circuit is capable of meeting the A4WP/AirFuel standard specifications for wireless power charging. Both inverter and inverter+rectifier configurations are tested and their performances are verified by simulations and experiments on a 16 W prototype using GaN power devices, showing an efficiency of 98 % and 83 %, respectively.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124432520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

A cost effective magnetic/electronic design for the water pump application drive: Analysis, design, and experimentation 具有成本效益的水泵应用驱动磁/电子设计:分析，设计和实验

2017 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2017-03-26 DOI: 10.1109/APEC.2017.7931025

A. Abdelrahman, M. Youssef

引用次数: 3

High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs 用于SiC功率mosfet全范围PWM操作的高频调制二次侧自供电隔离栅驱动器

2017 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2017-03-26 DOI: 10.1109/APEC.2017.7930806

Jorge García, E. Gurpinar, A. Castellazzi

{"title":"High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs","authors":"Jorge García, E. Gurpinar, A. Castellazzi","doi":"10.1109/APEC.2017.7930806","DOIUrl":"https://doi.org/10.1109/APEC.2017.7930806","url":null,"abstract":"The present work proposes a solution for an isolated gate driver suitable for SiC MOSFETs. The driver is implemented by means of two small magnetic transformers, to provide the turn-on and turn-off gate signals, as well as the power required for an adequate gate control. The operation is based on the modulation of the PWM pulses with a high frequency (HF) square-waveform signal. The resulting modulated AC waveform is applied to the primary side of the first transformer, and reconstructed at the secondary side to obtain the gate driving signal. Simultaneously, the HF modulating signal is connected to the primary of the second transformer, to provide the required gate drive voltage levels and power at the secondary side, ensuring full range duty ratio operation. Given that both primary side signals are HF symmetrical waveforms, saturation is avoided at both transformers, for any duty ratio operation. Therefore, the proposed solution provides galvanic isolation for power and gate signal transfer with very small core sizes, allowing for an overall size reduction vs. conventional solutions. This enables much more compact designs, which are critical in high-power density applications and multilevel converters. After describing the basic operation, experimental results on a prototype are shown, thus demonstrating the feasibility of the proposed solution.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116041295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5