Advances in Condensed-Matter and Materials Physics - Rudimentary Research to Topical Technology最新文献

G-Jitter Effects on Chaotic Convection in a Rotating Fluid Layer 旋转流体层中g抖动对混沌对流的影响

Advances in Condensed-Matter and Materials Physics - Rudimentary Research to Topical Technology Pub Date : 2020-02-10 DOI: 10.5772/intechopen.90846

P. Kiran

引用次数: 3

Study of Morphological, Electrical and Optical behaviour of Amorphous Chalcogenide Semiconductor 非晶硫系半导体的形态、电学和光学行为研究

Advances in Condensed-Matter and Materials Physics - Rudimentary Research to Topical Technology Pub Date : 2020-01-17 DOI: 10.5772/intechopen.90512

Mohsin Ganaie, M. Zulfequar

{"title":"Study of Morphological, Electrical and Optical behaviour of Amorphous Chalcogenide Semiconductor","authors":"Mohsin Ganaie, M. Zulfequar","doi":"10.5772/intechopen.90512","DOIUrl":"https://doi.org/10.5772/intechopen.90512","url":null,"abstract":"Amorphous chalcogenide semiconductor plays a key role in search for novel func-tional materials with excellent optical and electrical properties. The science of chalcogenide semiconductor (CS) show broad spectrum of soluble alloy and a wider band gap device that access the optimal energy bandgap. The electronic properties of these alloys can be tuned by controlling the proportion of (S, Se, Te). The chalcogenide semiconducting (CS) alloys are promising candidates because of low band gap (1.0–1.6 eV) and high extinction coefficient in the visible region of solar spectrum. The band structure of amorphous semiconductor governed the transport properties and evaluates various factors such as Tauc gap, defect states, mobility edges. In the extended and localized state of amorphous semiconductor an electron goes various transition, absorption/ emission, transport which is due to drift and diffusion under DC electric fields. CS, including sulfides, selenides, and tellurides, have been broadly utilized in variety of energy conversion and storage devices for example, solar cells, fuel cells, light-emitting diodes, IR detector, Li/Na-ion batteries, supercapacitors, thermoelectric devices, etc. Here, we report various morphological electrical, structural, and optical properties of InSeS thin films prepared by Melt Quenching thermal evaporation technique.","PeriodicalId":197182,"journal":{"name":"Advances in Condensed-Matter and Materials Physics - Rudimentary Research to Topical Technology","volume":"214 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115233284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Recent Advancement on the Excitonic and Biexcitonic Properties of Low-Dimensional Semiconductors 低维半导体的激子和双激子特性研究进展

Advances in Condensed-Matter and Materials Physics - Rudimentary Research to Topical Technology Pub Date : 2019-11-21 DOI: 10.5772/intechopen.90147

A. Armǎşelu

引用次数: 0

Excitons in Two-Dimensional Materials 二维材料中的激子

Advances in Condensed-Matter and Materials Physics - Rudimentary Research to Topical Technology Pub Date : 2019-10-31 DOI: 10.5772/intechopen.90042

Xiaoyang Zheng, Xian Zhang

{"title":"Excitons in Two-Dimensional Materials","authors":"Xiaoyang Zheng, Xian Zhang","doi":"10.5772/intechopen.90042","DOIUrl":"https://doi.org/10.5772/intechopen.90042","url":null,"abstract":"Because of the reduced dielectric screening and enhanced Coulomb interactions, two-dimensional (2D) materials like phosphorene and transition metal dichalcogenides (TMDs) exhibit strong excitonic effects, resulting in fascinating many-particle phenomena covering both intralayer and interlayer excitons. Their intrinsic bandgaps and strong excitonic emissions allow the possibility to tune the inherent optical, electrical, and optoelectronic properties of 2D materials via a variety of external stimuli, making them potential candidates for novel optoelectronic applications. In this review, we summarize exciton physics and devices in 2D semiconductors and insulators, especially in phosphorene, TMDs, and their van der Waals heterostructures (vdWHs). In the first part, we discuss the remarkably versatile excitonic landscape, including bright and dark excitons, trions, biexcitons, and interlayer excitons. In the second part, we examine common control methods to tune excitonic effects via electrical, magnetic, optical, and mechanical means. In the next stage, we provide recent advances on the optoelectronic device applications, such as electroluminescent devices, photovoltaic solar cells, and photodetectors. We conclude with a brief discussion on their potential to exploit vdWHs towards unique exciton physics and devices.","PeriodicalId":197182,"journal":{"name":"Advances in Condensed-Matter and Materials Physics - Rudimentary Research to Topical Technology","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130827628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

A Compact Source of Terahertz Radiation Based on an Open Corrugated Waveguide 基于开放式波纹波导的紧凑太赫兹辐射源

Advances in Condensed-Matter and Materials Physics - Rudimentary Research to Topical Technology Pub Date : 2019-10-22 DOI: 10.5772/intechopen.89692

L. Shchurova, V. Namiot

引用次数: 0

Applications of Graphene Modified by Self-Assembled Monolayers 自组装单层改性石墨烯的应用

Advances in Condensed-Matter and Materials Physics - Rudimentary Research to Topical Technology Pub Date : 2019-09-13 DOI: 10.5772/INTECHOPEN.88738

Gülsüm Ersü, Yenal Gokpek, M. Can, C. Zafer, S. Demic

{"title":"Applications of Graphene Modified by Self-Assembled Monolayers","authors":"Gülsüm Ersü, Yenal Gokpek, M. Can, C. Zafer, S. Demic","doi":"10.5772/INTECHOPEN.88738","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.88738","url":null,"abstract":"Self-assembled monolayers (SAMs) are well-oriented molecular structures that are formed by the adsorption of an active site of a surfactant onto a substrate’s surface. Aromatic SAMs were used to modify anode/hole transport layer interface in order to achieve preferable barrier alignment and charge carrier injection from anode to an organic-based thin film material. Other functions of SAMs include current blocking layers or moisture penetration blocking layers, dipolar surface layers for enhanced charge injection, and modification of work function of a material such as graphene acting as a spacer to physically separate and electrically decouple it from the substrate. Additionally, SAM modification of graphene leads to its electronic passivation at layers’ edges, elimination of defects, and enhanced adhesion and stability. The surface modification with molecules capable of forming SAM is a fast, simple, low-cost, and effective technique for the development of novel materials especially for the production of electronic devices. The ability to modify its properties by SAM technique has opened up a wide range of applications in electronic and optoelectronic devices.","PeriodicalId":197182,"journal":{"name":"Advances in Condensed-Matter and Materials Physics - Rudimentary Research to Topical Technology","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129212138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Indenter Shape Dependent Dislocation Actives and Stress Distributions of Single Crystal Nickel during Nanoindentation: A Molecular Dynamics Simulation 纳米压痕过程中单晶镍的位错活性和应力分布:分子动力学模拟

Advances in Condensed-Matter and Materials Physics - Rudimentary Research to Topical Technology Pub Date : 2019-09-06 DOI: 10.5772/intechopen.89111

Wenping Wu, Yun-li Li, Zhennan Zhang

{"title":"Indenter Shape Dependent Dislocation Actives and Stress Distributions of Single Crystal Nickel during Nanoindentation: A Molecular Dynamics Simulation","authors":"Wenping Wu, Yun-li Li, Zhennan Zhang","doi":"10.5772/intechopen.89111","DOIUrl":"https://doi.org/10.5772/intechopen.89111","url":null,"abstract":"The influences of indenter shape on dislocation actives and stress distributions during nanoindentation were studied by using molecular dynamics (MD) simulation. The load-displacement curves, indentation-induced stress fields, and dislocation activities were analyzed by using rectangular, spherical, and Berkovich indenters on single crystal nickel. For the rectangular and spherical indenters, the load-displacement curves have a linear dependence, but the elastic stage produced by the spherical indenter does not last longer than that produced by the rectangular indenter. For a Berkovich indenter, there is almost no linear elastic regime, and an amorphous region appears directly below the indenter tip, which is related to the extremely singular stress field around the indenter tip. In three indenters cases, the prismatic dislocation loops are observed on the {111} planes, and there is a sudden increase in stress near the indenter for the Berkovich indenter. The stress distributions are smooth with no sudden irregularities at low-indentation depths; and the stress increases and a sudden irregularity appears with the increasing indentation depths for the rectangular and spherical indenters. Moreover, the rectangular indenter has the most complex dislocation activities and the spherical indenter is next, while very few dislocations occur in the Berkovich indenter case.","PeriodicalId":197182,"journal":{"name":"Advances in Condensed-Matter and Materials Physics - Rudimentary Research to Topical Technology","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114837728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Superconducting Josephson-Based Metamaterials for Quantum-Limited Parametric Amplification: A Review 用于量子限制参量放大的超导约瑟夫逊基超材料:综述

Advances in Condensed-Matter and Materials Physics - Rudimentary Research to Topical Technology Pub Date : 2019-08-19 DOI: 10.5772/INTECHOPEN.89305

L. Fasolo, A. Greco, E. Enrico

引用次数: 4