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Electron emission Si-based resonant-tunneling diode 电子发射硅基谐振隧道二极管
2011 24th International Vacuum Nanoelectronics Conference Pub Date : 2011-07-18 DOI: 10.1116/1.3693977
A. Evtukh, N. Goncharuk, V. Litovchenko, H. Mimura
{"title":"Electron emission Si-based resonant-tunneling diode","authors":"A. Evtukh, N. Goncharuk, V. Litovchenko, H. Mimura","doi":"10.1116/1.3693977","DOIUrl":"https://doi.org/10.1116/1.3693977","url":null,"abstract":"New type of field emission resonant tunneling diode has been proposed and investigated as theoretically and experimentally. It based on Si-SiOx-Si multilayer cathode containing SiOx layer as input potential barrier, Si layer as quantum well and vacuum layer as output potential barrier of double barrier quantum structure. The calculation predicted the existence of the resonant maxima (three or four in dependence of input barrier height) on the current density - electric field dependences. Frequency dependences pointed out on appearance of negative conductance resulted from resonant tunnelling through the second energy level in QW at a series of transit angle (θup) values. The maximal values of optimal and upper frequency about 1.5 THz and 2 THz are reached at θup close to 0.45π when resonant tunnelling occurs through the third resonant level in QW. Experimental results confirmed the existence of the resonance peak in investigated resonant-tunnelling structure.","PeriodicalId":184449,"journal":{"name":"2011 24th International Vacuum Nanoelectronics Conference","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129591524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Work function measurement of Nd-oxide/W(100) surface by using of photoemission electron microscope 利用光电电子显微镜测量Nd-oxide/W(100)表面的功函数
2011 24th International Vacuum Nanoelectronics Conference Pub Date : 1900-01-01 DOI: 10.1109/ivnc.2015.7225550
H. Nakane, T. Kitaguchi, T. Kawakubo
{"title":"Work function measurement of Nd-oxide/W(100) surface by using of photoemission electron microscope","authors":"H. Nakane, T. Kitaguchi, T. Kawakubo","doi":"10.1109/ivnc.2015.7225550","DOIUrl":"https://doi.org/10.1109/ivnc.2015.7225550","url":null,"abstract":"A cathode material of a low work function is needed to achieve a high performance electron source. We measured the work function of W(100) surface modified with Nd2O3 by using of photoemission electron microscope. The work function of Nd-oxide/W(100) surface is measured to be 2.5eV.","PeriodicalId":184449,"journal":{"name":"2011 24th International Vacuum Nanoelectronics Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121622470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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