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Annealing temperature effect on properties of chemically deposited PbTe films and bulk 退火温度对化学沉积PbTe薄膜和本体性能的影响
Materials Science: An Indian Journal Pub Date : 2015-05-30 DOI: 10.31586/PHYSICOCHEMICAL.0202.02
Gh. Nashed
{"title":"Annealing temperature effect on properties of chemically deposited PbTe films and bulk","authors":"Gh. Nashed","doi":"10.31586/PHYSICOCHEMICAL.0202.02","DOIUrl":"https://doi.org/10.31586/PHYSICOCHEMICAL.0202.02","url":null,"abstract":"The PbTe films were deposited onto glass substrate (microscopic slices) by a chemical bath method (CBD) at room temperature. The deposited films are dense, smooth, and uniform with silver gray metallic luster structure. Using XRD, it found that the structure of PbTe possesses stable face centered cubic (fcc) phase. The grain size of the PbTe bulk increased within the range of 33– 57 nm with annealing temperature increasing.AFM micrographs of surface of the prepared film are observed that horizontal distance in the rang (230– 395) nm. The band gaps of the PbTe are determined from UV-Vis spectrophotometer and are found to be within the range (0.39 - 0.95) eV. Energy band gab of PbTe which determined from FT -IR spectrophotometer is (0.36ev). The activation energy varied from0.35- 1.72 eV for films and from0.11-0.34 eV for bulk with annealing temperature variations from 373-573K. Films and bulk exhibit p-type conduction and resistivity in the range (75×10-4&!. cm - 146×10-4U.cm). The carriers density and Hall mobility in PbTe bulk were in the rang 5.8 ×1023 m-3 and 4.004 m2/Vs.","PeriodicalId":18244,"journal":{"name":"Materials Science: An Indian Journal","volume":"88 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77217029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
New design of hairpin-koch fractal filter for suppression of spurious band 抑制杂散带的发夹-科赫分形滤波器的新设计
Materials Science: An Indian Journal Pub Date : 2013-09-01 DOI: 10.12785/IJTFST/020307
Amer Basim Shaalan, N. Habubi, S. Chiad, Z. Toma
{"title":"New design of hairpin-koch fractal filter for suppression of spurious band","authors":"Amer Basim Shaalan, N. Habubi, S. Chiad, Z. Toma","doi":"10.12785/IJTFST/020307","DOIUrl":"https://doi.org/10.12785/IJTFST/020307","url":null,"abstract":"The use of fractal geometries has significantly impacted many areas of science and engineering; one ofwhich ismicrowave filters.Microstrip filters have been widely used in a variety of microwave circuits and systems, it has received much attention because of the advantages such as compact and simple structures, small sizes, easy fabrication and low cost, etc., and all these features are the requirement of thewireless communication systems. The design of a hairpin-Koch filter has been proposed. This filter exhibits a periodic frequency response. The spurious bands are being suppressed significantly through the implementation ofKoch fractal on the micro strip coupled line.","PeriodicalId":18244,"journal":{"name":"Materials Science: An Indian Journal","volume":"454 1","pages":"217-221"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78799481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Novel cationic gemini surfactants with different chain length as corrosion inhibitors for carbon steel in 1 M HCl 不同链长的新型阳离子gemini表面活性剂在1m HCl中对碳钢的缓蚀剂
Materials Science: An Indian Journal Pub Date : 2013-05-01 DOI: 10.21608/ASAT.2013.21885
M. Nessim, O. A. A. Elshamy, O.H.Abdelraheem, M. M. Osman
{"title":"Novel cationic gemini surfactants with different chain length as corrosion inhibitors for carbon steel in 1 M HCl","authors":"M. Nessim, O. A. A. Elshamy, O.H.Abdelraheem, M. M. Osman","doi":"10.21608/ASAT.2013.21885","DOIUrl":"https://doi.org/10.21608/ASAT.2013.21885","url":null,"abstract":"Three cationic gemini surfactants of the type N2,N3-dialkyl-N2,N2,N3,N3- tetramethylbutane diamminium bromide namely Ia, Ib and Ic have been synthesized. Their chemical structures were elucidated by the routine methodologies 1H-NMR, elemental analysis and mass spectroscopy. The surface active properties were examined and found to be influenced by the chemical structure of the surfactants. The synthesized cationic gemini surfactants were tested as corrosion inhibitors for pipeline carbon steel API X52 immersed in 1 M HCl solution, using weight loss method. The obtained data refer to very good inhibitive efficiencies vary with concentrations, and increase in the following order: Ia >Ib > Ic. The Quantum chemical parameters such as highest occupied molecular orbital (HOMO), lowest unoccupied molecular orbital (LUMO) energy levels, energy gap (EHOMO-ELUMO), the dipole moment and charge densities were calculated. The theoretical calculations were in good agreement with corrosion inhibition results.","PeriodicalId":18244,"journal":{"name":"Materials Science: An Indian Journal","volume":"41 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2013-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89358819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Impact of dilution gases on structure, properties and growth of hydrogenated nanocrystalline silicon (nc-Si:H) prepared by HW-CVD method 稀释气体对HW-CVD法制备氢化纳米晶硅(nc-Si:H)结构、性能和生长的影响
Materials Science: An Indian Journal Pub Date : 2013-05-01 DOI: 10.12785/IJTFST/020207
N. Bakr, T. Mubarak, N. Habubi
{"title":"Impact of dilution gases on structure, properties and growth of hydrogenated nanocrystalline silicon (nc-Si:H) prepared by HW-CVD method","authors":"N. Bakr, T. Mubarak, N. Habubi","doi":"10.12785/IJTFST/020207","DOIUrl":"https://doi.org/10.12785/IJTFST/020207","url":null,"abstract":"In this work we present a detailed structural, optical and electrical characterization of hydrogenated nanocrystalline silicon (nc-Si:H) thin films grown by hot wire chemical vapor deposition (HW-CVD) as a function of hydrogen (H2), argon (Ar) and helium (He) dilution of silane. A variety of analysis techniques such as Raman spectroscopy (RS), x-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, UV-Visible spectroscopy and conductivity measurements were used to characterize the grown films. We observed that these properties are greatly influenced by dilution of silane with H2,Ar and He. Characterization of these films by Raman spectroscopy and low angle x-ray diffraction revealed that the increase in H2 andAr dilution of silane endorses the growth of crystallinity in the films whereas increase in He dilution of silane deteriorates the film properties.An attempt has beenmade to explain the fundamental differences in nanocrystallization growth mechanism by addition of H2, Ar and He in silane.","PeriodicalId":18244,"journal":{"name":"Materials Science: An Indian Journal","volume":"62 1","pages":"113-126"},"PeriodicalIF":0.0,"publicationDate":"2013-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90590865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Electrical Characteristic Measurement of the Fabricated CdSe / P-Si Heterojunction Solar Cell under Radiation Effect 辐射效应下CdSe / P-Si异质结太阳能电池的电特性测量
Materials Science: An Indian Journal Pub Date : 2012-08-31 DOI: 10.5923/J.MATERIALS.20120203.07
M. Ashry, S. Fares
{"title":"Electrical Characteristic Measurement of the Fabricated CdSe / P-Si Heterojunction Solar Cell under Radiation Effect","authors":"M. Ashry, S. Fares","doi":"10.5923/J.MATERIALS.20120203.07","DOIUrl":"https://doi.org/10.5923/J.MATERIALS.20120203.07","url":null,"abstract":"The electrical and photovoltaic properties of CdSe/p-Si heterojunction solar cells prepared by evaporation cooting on a single-crystal p-type silicon substrates are examined, under(100) mw/cm 2 , 25℃. The best fabricated cell shows an open-circuit voltage before irradiation is(0.62V) and after irradiation is(0.44 V ). The short-circuit current density before irradiation is(34 mA/cm 2 ) and after irradiation is(13 mA/cm 2 ). The fill factor before irradiation is(53 %) and after irradiation is(44.7 %). The conversion efficiency(active area ) before irradiation is(11.1%) and after irradiation is(2.5%) .was observed during two-hour illumination test and after storing the cell in air for three months. The illumination is from the CdSe side(frontwall ) .The cells are analyzed using I-V and P-V measurements, spectral response and 1/C 2 -V measurements, with focus on the influence of the solar cell thickness, light intensity illumination and effective dose of γ-radiation, which play a crucial role to improve the solar cell efficiency. γ-irradiation campaign with different doses has been carried out on a series of solar cells.","PeriodicalId":18244,"journal":{"name":"Materials Science: An Indian Journal","volume":"39 1","pages":"72-76"},"PeriodicalIF":0.0,"publicationDate":"2012-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90127423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Nanotechnology-an overview Nanotechnology-an概述
Materials Science: An Indian Journal Pub Date : 2009-01-01 DOI: 10.1201/b11930-2
A. Lagashetty, A. Bhavikatti
{"title":"Nanotechnology-an overview","authors":"A. Lagashetty, A. Bhavikatti","doi":"10.1201/b11930-2","DOIUrl":"https://doi.org/10.1201/b11930-2","url":null,"abstract":"Nanotechnology is an Interdisciplinary and integrates the science and technology. This technology is the materials at nanodimension. The approach at nanodimension towards manufacturing and fabrication will responds to the challenge for future competitiveness of much of the economy. Preparation of materials at nanodimension supports the growth of nanotechnology and which routes the nanotechnological applications. The emerging research materials are in the research stage and would be used in nanometer scale devices. Development of characterization technology is needed to understand the composition, structure, morphology and other requirements at nanodimension. This technology may be growing future and final technology and will be accessible out side the human regime.","PeriodicalId":18244,"journal":{"name":"Materials Science: An Indian Journal","volume":"52 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2009-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85367566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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