Electrical Characteristic Measurement of the Fabricated CdSe / P-Si Heterojunction Solar Cell under Radiation Effect

The electrical and photovoltaic properties of CdSe/p-Si heterojunction solar cells prepared by evaporation cooting on a single-crystal p-type silicon substrates are examined, under(100) mw/cm 2 , 25℃. The best fabricated cell shows an open-circuit voltage before irradiation is(0.62V) and after irradiation is(0.44 V ). The short-circuit current density before irradiation is(34 mA/cm 2 ) and after irradiation is(13 mA/cm 2 ). The fill factor before irradiation is(53 %) and after irradiation is(44.7 %). The conversion efficiency(active area ) before irradiation is(11.1%) and after irradiation is(2.5%) .was observed during two-hour illumination test and after storing the cell in air for three months. The illumination is from the CdSe side(frontwall ) .The cells are analyzed using I-V and P-V measurements, spectral response and 1/C 2 -V measurements, with focus on the influence of the solar cell thickness, light intensity illumination and effective dose of γ-radiation, which play a crucial role to improve the solar cell efficiency. γ-irradiation campaign with different doses has been carried out on a series of solar cells.