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Organic and Hybrid Field-Effect Transistors XX最新文献

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Device physics of organic vertical transistors based on conductive network electrodes 基于导电网络电极的有机垂直晶体管器件物理
Organic and Hybrid Field-Effect Transistors XX Pub Date : 2021-08-01 DOI: 10.1117/12.2597195
Chuan Liu
{"title":"Device physics of organic vertical transistors based on conductive network electrodes","authors":"Chuan Liu","doi":"10.1117/12.2597195","DOIUrl":"https://doi.org/10.1117/12.2597195","url":null,"abstract":"Vertical organic field effect transistors (VOFET) and vertical static induction transistor (VSIT) have shown the advances of large on-current, high compatibility with sensors, ease of solution-processing and good mechanical flexibility. However, there has been no concise and explicit theories for these transistors. Here, we draw the physical images of the mechanisms, derive the electrostatic potentials, and propose the simple current-voltage relations for these vertical organic transistors. The theory has been verified by numerical simulation and are consistent with experimental results. The theories also provide guidances for device designing toward sharp turn-on properties, a large on-off ratio and good saturation degree.","PeriodicalId":175873,"journal":{"name":"Organic and Hybrid Field-Effect Transistors XX","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116781826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Flexible organic transistors with submicron channel lengths and gate-to-contact overlaps 具有亚微米通道长度和栅极与触点重叠的柔性有机晶体管
Organic and Hybrid Field-Effect Transistors XX Pub Date : 2021-08-01 DOI: 10.1117/12.2597202
H. Klauk, U. Zschieschang
{"title":"Flexible organic transistors with submicron channel lengths and gate-to-contact overlaps","authors":"H. Klauk, U. Zschieschang","doi":"10.1117/12.2597202","DOIUrl":"https://doi.org/10.1117/12.2597202","url":null,"abstract":"","PeriodicalId":175873,"journal":{"name":"Organic and Hybrid Field-Effect Transistors XX","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127704780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced non-volatile attribute of FeFET based memory device via tuning of ferroelectric microstructure 通过调整铁电结构增强基于FeFET的存储器件的非易失性
Organic and Hybrid Field-Effect Transistors XX Pub Date : 2021-08-01 DOI: 10.1117/12.2596104
D. Roy
{"title":"Enhanced non-volatile attribute of FeFET based memory device via tuning of ferroelectric microstructure","authors":"D. Roy","doi":"10.1117/12.2596104","DOIUrl":"https://doi.org/10.1117/12.2596104","url":null,"abstract":"","PeriodicalId":175873,"journal":{"name":"Organic and Hybrid Field-Effect Transistors XX","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128004315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Twisting organic semiconductor crystals 扭转有机半导体晶体
Organic and Hybrid Field-Effect Transistors XX Pub Date : 2021-08-01 DOI: 10.1117/12.2595148
Stephanie S. Lee, Yongfan Yan, A. Shtukenberg, B. Kahr, Yuze Zhang
{"title":"Twisting organic semiconductor crystals","authors":"Stephanie S. Lee, Yongfan Yan, A. Shtukenberg, B. Kahr, Yuze Zhang","doi":"10.1117/12.2595148","DOIUrl":"https://doi.org/10.1117/12.2595148","url":null,"abstract":"Crystals that twist as they grow are common but little known and introduce completely unexplored features to materials design. Here, we present growth-induced twists to molecular semiconductor crystals with the expectation that microstructure and continually precessing crystallographic orientations can modulate interactions with light, charge transport, and other optoelectronic processes. We have found that a variety of organic semiconductors and charge transfer complexes can be readily induced to grow from the melt as spherulites of tightly packed helicoidal fibrils. The twisting pitch can be controlled by the degree of undercooling after melting or through the incorporation of additives. Intriguingly, charge mobilities measured using field-effect transistor platforms have been found to increase with increasing extent of twisting. These results indicate crystal twisting to be a promising strategy for modulating the performance of optoelectronic devices.","PeriodicalId":175873,"journal":{"name":"Organic and Hybrid Field-Effect Transistors XX","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131801236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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