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2016 29th International Vacuum Nanoelectronics Conference (IVNC)最新文献

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Non-resonant emission diode on silicon cathode with diamond like coating 类金刚石涂层硅阴极非谐振发射二极管
2016 29th International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2016-08-25 DOI: 10.1109/IVNC.2016.7551520
N. Goncharuk, N. Karushkin
{"title":"Non-resonant emission diode on silicon cathode with diamond like coating","authors":"N. Goncharuk, N. Karushkin","doi":"10.1109/IVNC.2016.7551520","DOIUrl":"https://doi.org/10.1109/IVNC.2016.7551520","url":null,"abstract":"A theoretical model of a microwave diode structure was applied to the base of a silicon cathode with a diamond like coating (DLC) and non-resonant electron emission to study negative conductance of the structure in the framework of the small signal theory. The negative conductance results from delays of electron emission and a transit in vacuum transit layer. For the diode a potential barrier of a difference in electron affinity energy between silicon and DLC is lower than energy of emitting electron and a width of DLC and vacuum transit layers are an order of a magnitude higher than for the diodes before investigated. Therefore the emission delay in the model includes a delay of a ballistic electron transit in DLC besides a delay of an electron tunneling under potential barrier of affinity energy in DLC. A spectrum of the negative conductance depending on parameters of DLC and vacuum transit layer was studied.","PeriodicalId":173642,"journal":{"name":"2016 29th International Vacuum Nanoelectronics Conference (IVNC)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128743601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of single crystalline SmB6 nanocone arrays and investigation of their field emission properties 单晶SmB6纳米锥阵列的制备及其场发射性能研究
2016 29th International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2016-08-25 DOI: 10.1109/IVNC.2016.7551503
Xun Yang, H. Gan, Luxi Peng, Yan Tian, Jun Chen, S. Deng, N. Xu, Fei Liu
{"title":"Fabrication of single crystalline SmB6 nanocone arrays and investigation of their field emission properties","authors":"Xun Yang, H. Gan, Luxi Peng, Yan Tian, Jun Chen, S. Deng, N. Xu, Fei Liu","doi":"10.1109/IVNC.2016.7551503","DOIUrl":"https://doi.org/10.1109/IVNC.2016.7551503","url":null,"abstract":"As a typcial kondo insulator, SmB<sub>6</sub> has attracted most of attention in recent years. But their corresponding nanostructures are hard to fabricate due to the growth technique. In this paper, uniform SmB<sub>6</sub> nanocone arrays have been successfully fabricated by a simple chemical vapor deposition (CVD) method. The field emission (FE) behaviors of SmB<sub>6</sub> nanocone arrays were investigated to reveal their surface properties. FE measurement results show that SmB<sub>6</sub> nanocone arrays have a low turn-on electric field of 1.84 V/μm (at 10 μA/cm<sup>2</sup>) and good emission stability, which may have potential applications in FE area.","PeriodicalId":173642,"journal":{"name":"2016 29th International Vacuum Nanoelectronics Conference (IVNC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130689526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Atomistic study of field emission current from graphene nano-ribbon and effect of strain on field emission current 石墨烯纳米带场发射电流的原子性研究及应变对场发射电流的影响
2016 29th International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2016-08-25 DOI: 10.1109/IVNC.2016.7551507
M. Behrooz, M. Monshipouri, Y. Abdi
{"title":"Atomistic study of field emission current from graphene nano-ribbon and effect of strain on field emission current","authors":"M. Behrooz, M. Monshipouri, Y. Abdi","doi":"10.1109/IVNC.2016.7551507","DOIUrl":"https://doi.org/10.1109/IVNC.2016.7551507","url":null,"abstract":"In this report, we present a modification in non-equilibrium Green's function method to investigate structural effects of the emitter on field emission current. Effect of applied uniaxial strain can also be studied using our modified formalism. Moreover a practical method to consider the effect of device parameters such as channel length, anode-cathode separation and gate potential can be provided by the proposed formalism.","PeriodicalId":173642,"journal":{"name":"2016 29th International Vacuum Nanoelectronics Conference (IVNC)","volume":"149 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117303891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure 碳纳米管电子束曝光的伪晶硅薄膜
2016 29th International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2016-08-25 DOI: 10.1109/IVNC.2016.7551531
Ha Rim Lee, Jungsu Kang, Min Tae Chung, K. Park
{"title":"Pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure","authors":"Ha Rim Lee, Jungsu Kang, Min Tae Chung, K. Park","doi":"10.1109/IVNC.2016.7551531","DOIUrl":"https://doi.org/10.1109/IVNC.2016.7551531","url":null,"abstract":"We developed the novel pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure technique. CNT emitters grown by resist-assisted patterning process is used for the source of electron beam to crystallize an amorphous Si (a-Si:H) thin films. The high electron energy form CNT emitters is enough to change phase to pseudo crystalline due to the network vibration of silicon atoms. The grain size distribution of Si thin films about 10~20 nm. However, a cross section of HR-TEM image shows fully crystallized without grain boundaries.","PeriodicalId":173642,"journal":{"name":"2016 29th International Vacuum Nanoelectronics Conference (IVNC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134181615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vertically aligned carbon nanotubes (VACNTs) size shrinking through catalyst size reduction: Use of innovative nanodiamonds hard mask technique 垂直排列的碳纳米管(VACNTs)尺寸通过催化剂尺寸缩小:使用创新的纳米金刚石硬掩膜技术
2016 29th International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2016-08-25 DOI: 10.1109/IVNC.2016.7551464
J. Mazellier, Julien Delchevalrie, Lucie Sabaut, H. Girard, S. Saada
{"title":"Vertically aligned carbon nanotubes (VACNTs) size shrinking through catalyst size reduction: Use of innovative nanodiamonds hard mask technique","authors":"J. Mazellier, Julien Delchevalrie, Lucie Sabaut, H. Girard, S. Saada","doi":"10.1109/IVNC.2016.7551464","DOIUrl":"https://doi.org/10.1109/IVNC.2016.7551464","url":null,"abstract":"We demonstrate in this study the possibility to use nanodiamonds particles as hard mask to easily produce catalyst (Nickel) nanoparticles on-wafer with size in the 10-20nm range. These nanoparticles are used to grow vertically aligned carbon nanotubes (VACNTs) by employing a plasma enhanced chemical vapor deposition technic. These narrow VACNTs are grown to produce cold cathodes that will help to test predicted beam divergence scaling with emitter height.","PeriodicalId":173642,"journal":{"name":"2016 29th International Vacuum Nanoelectronics Conference (IVNC)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122913744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preliminary study of cathode ray tube phosphores on the basis of nanocrystal quantum dots 基于纳米晶体量子点的阴极射线管荧光粉的初步研究
2016 29th International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2016-08-25 DOI: 10.1109/IVNC.2016.7551488
D. Ozol
{"title":"Preliminary study of cathode ray tube phosphores on the basis of nanocrystal quantum dots","authors":"D. Ozol","doi":"10.1109/IVNC.2016.7551488","DOIUrl":"https://doi.org/10.1109/IVNC.2016.7551488","url":null,"abstract":"The problem of developing efficient field-emission light sources requires a search for new, more efficient phosphors. One of the possible ways are nanocrystal quantum dots. Quantum offer wide opportunities for manufacturing of luminophores with tuning spectra.","PeriodicalId":173642,"journal":{"name":"2016 29th International Vacuum Nanoelectronics Conference (IVNC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130005227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Intrinsic emittance and coherence of double-gate field emitter arrays 双栅场发射极阵列的本征发射度和相干性
2016 29th International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2016-08-25 DOI: 10.1109/IVNC.2016.7551472
S. Tsujino, P. Das Kanungo, M. Monshipouri, C. Lee, T. Yamada, G. Kassier, R. D. Miller
{"title":"Intrinsic emittance and coherence of double-gate field emitter arrays","authors":"S. Tsujino, P. Das Kanungo, M. Monshipouri, C. Lee, T. Yamada, G. Kassier, R. D. Miller","doi":"10.1109/IVNC.2016.7551472","DOIUrl":"https://doi.org/10.1109/IVNC.2016.7551472","url":null,"abstract":"The intrinsic transverse emittance and coherence of double-gate field emitter array cathodes were explored experimentally including the low-energy electron diffraction and compared with theory.","PeriodicalId":173642,"journal":{"name":"2016 29th International Vacuum Nanoelectronics Conference (IVNC)","volume":"05 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121013285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of current density distribution of field emitted electrons by numerical simulation in conjunction with analytical approach 用数值模拟结合解析法评价场发射电子的电流密度分布
2016 29th International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2016-08-25 DOI: 10.1109/IVNC.2016.7551521
Y. Gotoh, H. Tsuji, M. Nagao
{"title":"Evaluation of current density distribution of field emitted electrons by numerical simulation in conjunction with analytical approach","authors":"Y. Gotoh, H. Tsuji, M. Nagao","doi":"10.1109/IVNC.2016.7551521","DOIUrl":"https://doi.org/10.1109/IVNC.2016.7551521","url":null,"abstract":"Evaluation of the current density distribution of the electron beam emitted from the volcano-structured, double gated Spindt-type field emitter arrays were performed by numerical simulation in conjunction with analytical approach. By assuming the emitter shape as a part of a hyperboloid, the electric field near the emitter surface could be well estimated even by finite difference method. It was found that the gate height is important to maintain the current density.","PeriodicalId":173642,"journal":{"name":"2016 29th International Vacuum Nanoelectronics Conference (IVNC)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122015717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Spin polarization of electrons field-emitted from Cr thin film deposited on W<001> tips W尖Cr薄膜场发射电子的自旋极化
2016 29th International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2016-08-25 DOI: 10.1109/IVNC.2016.7551475
S. Nagai, Naoya Sakai, Kento Miyazaki, Hiroki Toyama, T. Iwata, K. Kajiwara, K. Hata
{"title":"Spin polarization of electrons field-emitted from Cr thin film deposited on W<001> tips","authors":"S. Nagai, Naoya Sakai, Kento Miyazaki, Hiroki Toyama, T. Iwata, K. Kajiwara, K. Hata","doi":"10.1109/IVNC.2016.7551475","DOIUrl":"https://doi.org/10.1109/IVNC.2016.7551475","url":null,"abstract":"In this study, we measured spin polarization of electrons field-emitted from a topological antiferromagnetic Cr(001) surface, which is expected to generate a high and stable spin-polarized electron beam. When the Cr thin film deposited on a W<;001> tip was thicker than 20 nm, the spin polarization of the field-emitted electrons reached 50%. Furthermore, the magnitude and direction of the spin polarization were stable for 90 min. These results indicate that topological antiferromagnetic material is more effective than common ferromagnets as the cathode material of spin-polarized field emitters to achieve high and stable spin polarization.","PeriodicalId":173642,"journal":{"name":"2016 29th International Vacuum Nanoelectronics Conference (IVNC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126112369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Determination of geometrical form factor of emitter from Schottky plot 利用肖特基图确定发射极几何形状因子
2016 29th International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2016-08-25 DOI: 10.1109/IVNC.2016.7551527
Natsuhei Torii, Daiki Sugie, H. Murata, E. Rokuta, H. Shimoyama, H. Yasuda, T. Haraguchi
{"title":"Determination of geometrical form factor of emitter from Schottky plot","authors":"Natsuhei Torii, Daiki Sugie, H. Murata, E. Rokuta, H. Shimoyama, H. Yasuda, T. Haraguchi","doi":"10.1109/IVNC.2016.7551527","DOIUrl":"https://doi.org/10.1109/IVNC.2016.7551527","url":null,"abstract":"The electric field strength on the emitter surface is the most important parameter because it strongly influences the gun performance. We have found that the electric field strength on the emitter surface can be estimated experimentally from the Schottky plot whose slope depends not on the work function but only on the reciprocal of the emitter temperature.","PeriodicalId":173642,"journal":{"name":"2016 29th International Vacuum Nanoelectronics Conference (IVNC)","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115036554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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