Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz最新文献

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InGaAsP/InP Geiger-mode APD-based LiDAR (Erratum) InGaAsP/InP盖革模式apd激光雷达(勘误)
Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz Pub Date : 2020-05-28 DOI: 10.1117/12.2574715
Xudong Jiang, S. Wilton, I. Kudryashov, M. Itzler, M. Entwistle, Jack Kotelnikov, A. Katsnelson, Brian Piccione, M. Owens, K. Slomkowski, Scott C. Roszko, S. Rangwala
{"title":"InGaAsP/InP Geiger-mode APD-based LiDAR (Erratum)","authors":"Xudong Jiang, S. Wilton, I. Kudryashov, M. Itzler, M. Entwistle, Jack Kotelnikov, A. Katsnelson, Brian Piccione, M. Owens, K. Slomkowski, Scott C. Roszko, S. Rangwala","doi":"10.1117/12.2574715","DOIUrl":"https://doi.org/10.1117/12.2574715","url":null,"abstract":"Publisher’s Note: This paper, originally published on 18 September 2018, was replaced with a corrected/revised version on 28 May 2020. If you downloaded the original PDF but are unable to access the revision, please contact SPIE Digital Library Customer Service for assistance.","PeriodicalId":170381,"journal":{"name":"Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz","volume":"472 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132959402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
III-nitride nanowire photodetectors (Conference Presentation) 氮化纳米线光电探测器(会议报告)
Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz Pub Date : 2018-09-18 DOI: 10.1117/12.2322128
A. Ajay, M. Spies, J. Lähnemann, J. Polaczyński, Martien I. den-Hertog, E. Monroy
{"title":"III-nitride nanowire photodetectors (Conference Presentation)","authors":"A. Ajay, M. Spies, J. Lähnemann, J. Polaczyński, Martien I. den-Hertog, E. Monroy","doi":"10.1117/12.2322128","DOIUrl":"https://doi.org/10.1117/12.2322128","url":null,"abstract":"","PeriodicalId":170381,"journal":{"name":"Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz","volume":"451 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133781342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On-chip and remote sensing with quantum cascade laser and detector systems (Conference Presentation) 基于量子级联激光和探测器系统的片上和遥感(会议报告)
Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz Pub Date : 2018-09-18 DOI: 10.1117/12.2321253
G. Strasser, B. Schwarz, B. Hinkov, R. Szedlak, H. Detz, A. Andrews, W. Schrenk
{"title":"On-chip and remote sensing with quantum cascade laser and detector systems (Conference Presentation)","authors":"G. Strasser, B. Schwarz, B. Hinkov, R. Szedlak, H. Detz, A. Andrews, W. Schrenk","doi":"10.1117/12.2321253","DOIUrl":"https://doi.org/10.1117/12.2321253","url":null,"abstract":"","PeriodicalId":170381,"journal":{"name":"Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129131149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Selective-area nanowire photodetectors: from near to mid-wavelength infrared (Conference Presentation) 选择性区域纳米线光电探测器:从近波长到中波长红外(会议报告)
Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz Pub Date : 2018-09-18 DOI: 10.1117/12.2502113
D. Huffaker, D. Ren, K. M. Azizur-Rahman, Hyunseok Kim
{"title":"Selective-area nanowire photodetectors: from near to mid-wavelength infrared (Conference Presentation)","authors":"D. Huffaker, D. Ren, K. M. Azizur-Rahman, Hyunseok Kim","doi":"10.1117/12.2502113","DOIUrl":"https://doi.org/10.1117/12.2502113","url":null,"abstract":"Semiconductor nanowires are frequently highlighted as promising building blocks for next-generation optoelectronic devices. In this study, we explore infrared photodetectors based on selective-area nanowire arrays, spanning the wavelength spectrum from near-infrared (NIR) to mid-wavelength infrared (MWIR). Examples of these nanowire detectors include: NIR GaAs photodiodes, NIR InGaAs avalanche photodetectors (APDs), NIR InGaAs-GaAs single-photon photodiodes (SPADs), short-wavelength infrared (SWIR) InAs photodiodes, and MWIR InAsSb photodiodes. The small fill factor of nanowire arrays, i.e., the small junction area, is advantageous as it causes significant suppression of dark current, which further decreases the noise level and increases the detectivity. In addition, by utilizing metal nanostructures as 3D plasmonic gratings, we can enhance optical absorption in nanowires through excitation of surface plasmonic waves at metal-nanowire interfaces. Our work shows that, through proper design and fabrication, nanowire-based photodetectors can demonstrate equivalent or better performance compared to their planar device counterparts.","PeriodicalId":170381,"journal":{"name":"Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133834113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nanostructured epitaxial graphene for ultra-broadband optoelectronic detectors (Conference Presentation) 用于超宽带光电探测器的纳米结构外延石墨烯(会议报告)
Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz Pub Date : 2018-09-18 DOI: 10.1117/12.2321313
A. Fatimy, Luke St. Marie, A. Nath, B. Kong, A. Boyd, R. Myers-Ward, K. Daniels, M. M. Jadidi, T. Murphy, D. K. Gaskill, P. Barbara
{"title":"Nanostructured epitaxial graphene for ultra-broadband optoelectronic detectors (Conference Presentation)","authors":"A. Fatimy, Luke St. Marie, A. Nath, B. Kong, A. Boyd, R. Myers-Ward, K. Daniels, M. M. Jadidi, T. Murphy, D. K. Gaskill, P. Barbara","doi":"10.1117/12.2321313","DOIUrl":"https://doi.org/10.1117/12.2321313","url":null,"abstract":"Atomically thin materials like semimetallic graphene and semiconducting transition metal dichalcogenides (TMDs) are an ideal platform for ultra-thin optoelectronic devices due to their direct bandgap (for monolayer thickness) and their considerable light absorption. For devices based on semiconducting TMDs, light detection occurs by optical excitation of charge carriers above the bandgap. For gapless graphene, light absorption causes a large increase in electron temperature, because of its small electronic heat capacity and weak electron-phonon coupling, making it suitable for hot-electron detectors. Here we show that, by nanostructuring graphene into quantum dots, we can exploit quantum confinement to achieve hot-electron bolometric detection. The graphene quantum dots are patterned from epitaxial graphene on SiC, with dot diameter ranging from 30 nm to 700 nm [1]. Nanostructuring greatly increases the temperature dependence of the electrical resistance, yielding detectors with extraordinary performance (responsivities of 1 × 10^(10) V W^(−1) and electrical noise-equivalent power, ∼2 × 10^(−16) W Hz^(−1/2) at 2.5 K). We will discuss how the dynamics of the charge carriers, namely the hot-electron cooling, affects the device operation and its power dependence. These detectors work in a very broad spectral range, from terahertz through telecom to ultraviolet radiation [2], with a design that is easily scalable for detector arrays. \u0000\u0000\u0000[1] El Fatimy, A. et al. , \"Epitaxial graphene quantum dots for high-performance terahertz bolometers,\" Nature Nanotechnology 11, 335-338 (2016).\u0000\u0000[2] El Fatimy, A. et al. , \"Ultra-broadband photodetectors based on epitaxial graphene quantum dots\" Nanophotonics (2018).","PeriodicalId":170381,"journal":{"name":"Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132501799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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