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Si Detectors and Characterization for HEP and Photon Science Experiment最新文献

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Performance of MCz Si Material for p+n−n+ and n+p−p+ Si Sensor Design: Status and Development for HL-LHC 用于p+n−n+和n+p−p+ Si传感器的MCz Si材料性能:HL-LHC的现状与发展
Si Detectors and Characterization for HEP and Photon Science Experiment Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-19531-1_3
A. Srivastava
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引用次数: 0
Development of Radiation Hard Pixel Detectors for the European XFEL 欧洲XFEL辐射硬像素探测器的研制
Si Detectors and Characterization for HEP and Photon Science Experiment Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-19531-1_4
A. Srivastava
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引用次数: 0
Characterization of Si Detectors Si探测器的表征
Si Detectors and Characterization for HEP and Photon Science Experiment Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-19531-1_9
A. Srivastava
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引用次数: 0
Si Detector for HEP and Photon Science Experiments: How to Design Detectors by TCAD Simulation HEP和光子科学实验用硅探测器:如何用TCAD仿真设计探测器
Si Detectors and Characterization for HEP and Photon Science Experiment Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-19531-1_11
A. Srivastava
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引用次数: 0
T-CAD Simulation for the Designing of Detectors 探测器设计的T-CAD仿真
Si Detectors and Characterization for HEP and Photon Science Experiment Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-19531-1_5
A. Srivastava
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引用次数: 0
Analysis & Optimal Design of Radiation Hard p+n Si Pixel Detector for the Next generation Photon Science Experiments 下一代光子科学实验用辐射硬p+n硅像元探测器的分析与优化设计
Si Detectors and Characterization for HEP and Photon Science Experiment Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-19531-1_7
A. Srivastava
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引用次数: 0
Development of Si Detectors for the CMS LHC Experiments CMS大型强子对撞机实验用Si探测器的研制
Si Detectors and Characterization for HEP and Photon Science Experiment Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-19531-1_1
A. Srivastava
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引用次数: 0
Physics and Technology of Si Detectors 硅探测器的物理与技术
Si Detectors and Characterization for HEP and Photon Science Experiment Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-19531-1_2
A. Srivastava
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引用次数: 0
Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL EuXFEL AGIPD门控二极管C/V、G/V电特性分析及TCAD仿真
Si Detectors and Characterization for HEP and Photon Science Experiment Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-19531-1_10
A. Srivastava
{"title":"Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL","authors":"A. Srivastava","doi":"10.1007/978-3-030-19531-1_10","DOIUrl":"https://doi.org/10.1007/978-3-030-19531-1_10","url":null,"abstract":"","PeriodicalId":167123,"journal":{"name":"Si Detectors and Characterization for HEP and Photon Science Experiment","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126909158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of Radiation Hard p+n Si Pixel Sensors for the European XFEL 欧洲XFEL辐射硬p+n Si像素传感器的研制
Si Detectors and Characterization for HEP and Photon Science Experiment Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-19531-1_6
A. Srivastava
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引用次数: 0
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