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2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05.最新文献

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Energy scavenging device in LTCC materials LTCC材料中的能量清除装置
2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05. Pub Date : 2005-04-15 DOI: 10.1109/WMED.2005.1431625
S. Scherrer, D. Plumlee, A. Moll
{"title":"Energy scavenging device in LTCC materials","authors":"S. Scherrer, D. Plumlee, A. Moll","doi":"10.1109/WMED.2005.1431625","DOIUrl":"https://doi.org/10.1109/WMED.2005.1431625","url":null,"abstract":"Energy scavenging devices can use environmental vibrations to power remote devices without the need for wires or batteries. This paper discusses the use of low temperature co-fired ceramics to design and fabricate a compact, multilayer coil to power an electromagnetic energy scavenging device","PeriodicalId":164698,"journal":{"name":"2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05.","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115056312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Efficacy of fluorine doping at various stages on noise reduction 不同阶段氟掺杂对降噪的影响
2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05. Pub Date : 2005-04-15 DOI: 10.1109/WMED.2005.1431604
M. Nelson, K. Yokoyama, M. Thomason, G. Scott, B. Greenwood
{"title":"Efficacy of fluorine doping at various stages on noise reduction","authors":"M. Nelson, K. Yokoyama, M. Thomason, G. Scott, B. Greenwood","doi":"10.1109/WMED.2005.1431604","DOIUrl":"https://doi.org/10.1109/WMED.2005.1431604","url":null,"abstract":"Reduction of flicker noise through introduction of fluorine has become a well-known phenomenon. In this paper, we show the effects of fluorine introduced in a number of different ways and its effect on noise characteristics. We find that the introduction method and the location within the flow have a small impact on the effectiveness of the fluorine on noise improvement. This knowledge allows flexible introduction of noise reduction while minimizing the impact on the process flow","PeriodicalId":164698,"journal":{"name":"2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05.","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134516466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Optoelectronic devices for wireless broadband communications 无线宽带通信用光电器件
2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05. Pub Date : 2005-04-15 DOI: 10.1109/WMED.2005.1431597
P. Yu, T. Liao, G. Tzeremes, C. Christodoulou
{"title":"Optoelectronic devices for wireless broadband communications","authors":"P. Yu, T. Liao, G. Tzeremes, C. Christodoulou","doi":"10.1109/WMED.2005.1431597","DOIUrl":"https://doi.org/10.1109/WMED.2005.1431597","url":null,"abstract":"This presentation gives an overview of the requirements of optoelectronic links for their insertion in applications such as CATV, broadband wireless LAN and other sensing applications. In particular, the recent development of high power photodiodes for conversion of broadband modulated optical signals to electrical signals for antenna transmission will be described.","PeriodicalId":164698,"journal":{"name":"2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05.","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116291781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Flyback converter with voltage control mode on chip for portable applications 带电压控制模式的反激变换器，用于便携式应用
2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05. Pub Date : 2005-04-15 DOI: 10.1109/WMED.2005.1431627
Sridhar Nalla, H. Hess, K. Buck, E. J. Mentze
{"title":"Flyback converter with voltage control mode on chip for portable applications","authors":"Sridhar Nalla, H. Hess, K. Buck, E. J. Mentze","doi":"10.1109/WMED.2005.1431627","DOIUrl":"https://doi.org/10.1109/WMED.2005.1431627","url":null,"abstract":"This paper introduces a compact, low power and submicron integrated DC-DC flyback converter designed for generating a constant desired output voltage. The proposed topology is designed to operate in continuous current mode operation at 1.25MHz. A PWM control scheme based on triangular waveform modulation is presented. The converter switch and voltage mode control system is fabricated in a standard 0.35mum CMOS technology. Energy storage and power isolation are off-chip. Synchronous rectification topology using MOSFET is implemented. The converter with voltage control mode is observed to generate a DC voltage of 3.3V with 0.08 ripple using CADENCE simulations","PeriodicalId":164698,"journal":{"name":"2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130090343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Computer-aided engineering (CAE) applications in semiconductor device manufacturing and reliability 计算机辅助工程(CAE)在半导体器件制造和可靠性中的应用
2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05. Pub Date : 2005-04-15 DOI: 10.1109/WMED.2005.1431614
S. Groothuis, R. Meade
{"title":"Computer-aided engineering (CAE) applications in semiconductor device manufacturing and reliability","authors":"S. Groothuis, R. Meade","doi":"10.1109/WMED.2005.1431614","DOIUrl":"https://doi.org/10.1109/WMED.2005.1431614","url":null,"abstract":"With the ever increasing complexity of semiconductor device designs, the need for designed-in manufacturability and reliability continues to present a challenge for successful semiconductor product introduction. Technology computer-aided design (TCAD) software tools provide the needed device physics simulations for both functional and performance requirements. However, an innovative approach of using both TCAD tools and computer-aided engineering (CAE) simulation tools (e.g., used in other areas of physics and mechanical engineering) can provide a comprehensive solution to wafer fabrication and device reliability efforts","PeriodicalId":164698,"journal":{"name":"2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05.","volume":"16 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132626628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel dielectric materials for future transistor generations 用于未来晶体管世代的新型介电材料
2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05. Pub Date : 2005-04-15 DOI: 10.1109/WMED.2005.1431600
G. Bersuker
{"title":"Novel dielectric materials for future transistor generations","authors":"G. Bersuker","doi":"10.1109/WMED.2005.1431600","DOIUrl":"https://doi.org/10.1109/WMED.2005.1431600","url":null,"abstract":"Summary form only given. To meet the need for higher transistor speed while keeping power consumption under control, the semiconductor industry is working to introduce high-k gate dielectrics in leading-edge transistor manufacturing processes. However, these attempts are hampered by issues with high-k device performance, which were not fully anticipated at the start of high-k development. These issues may be of intrinsic material nature, process tool related, or related to material integration within the fabrication process. In addressing this question, the fundamental factors controlling the value of dielectric constants, along with the major factors determining integration of new materials into the mainstream manufacturing, are discussed in this presentation","PeriodicalId":164698,"journal":{"name":"2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116753031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 28
A low-power 16-bit 500 kS/s ADC 低功耗16位500k /s ADC
2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05. Pub Date : 2005-04-15 DOI: 10.1109/WMED.2005.1431628
Haidong Guo, D. Rector, G. la Rue
{"title":"A low-power 16-bit 500 kS/s ADC","authors":"Haidong Guo, D. Rector, G. la Rue","doi":"10.1109/WMED.2005.1431628","DOIUrl":"https://doi.org/10.1109/WMED.2005.1431628","url":null,"abstract":"A 6.2 mW 16-bit 500 kSps charge redistribution self calibrating successive approximation analog-to-digital converter (ADC) is described. It has an input range of 2 V, a resolution of 16 bits and operates with +/- 1.5 V supplies. Simulations show a signal-to-noise ratio of 95 dB for an effective accuracy of 15 bits in 0.25 mum CMOS technology. A novel interleaving architecture and an improved comparator design contribute to reducing the power while maintaining the accuracy and speed. The ADC is intended to digitize the amplified neurophysiological signals from a companion 16-channel sensor IC","PeriodicalId":164698,"journal":{"name":"2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05.","volume":"74 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116288381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Double-gate SOI CMOS device DC & RF characterization 双栅SOI CMOS器件DC和RF特性
2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05. Pub Date : 2005-04-15 DOI: 10.1109/WMED.2005.1431626
G. VanAckern, S. Parke
{"title":"Double-gate SOI CMOS device DC & RF characterization","authors":"G. VanAckern, S. Parke","doi":"10.1109/WMED.2005.1431626","DOIUrl":"https://doi.org/10.1109/WMED.2005.1431626","url":null,"abstract":"A variety of double gate (DG) MOSFET transistor structures are being developed to permit CMOS scaling to the sub-50nm regime. However, flexible dynamic threshold voltage control is urgently needed for ultralow power digital circuits, novel analog/RF circuits, and dynamically reconfigurable circuits. Independently double gated (IDG) FinFETs have recently been reported to have highly controllable Vt. However, a lithographically defined fin width of <10nm is required to achieve this. Other recently reported planar DG MOSFETs typically have oversized, non-self-aligned bottom gates and/or require epitaxial channel growth","PeriodicalId":164698,"journal":{"name":"2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125404541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1 GSps 11-bit track-and-hold in SiGe BiCMOS SiGe BiCMOS中的1gsps 11位跟踪保持
2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05. Pub Date : 2005-04-15 DOI: 10.1109/WMED.2005.1431621
D. Robinson, G.S. Lame
{"title":"1 GSps 11-bit track-and-hold in SiGe BiCMOS","authors":"D. Robinson, G.S. Lame","doi":"10.1109/WMED.2005.1431621","DOIUrl":"https://doi.org/10.1109/WMED.2005.1431621","url":null,"abstract":"A low noise track-and-hold amplifier was designed and simulated in the Jazz Semiconductor 0.18 mum SiGe BiCMOS process. Compensation techniques were employed in order to meet both the noise and distortion requirements simultaneously. The design incorporates a MOS buffer at the output to enable long hold times without droop. This allows testing by a high-accuracy, off-chip ADC","PeriodicalId":164698,"journal":{"name":"2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05.","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132204839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
High power photodiode for antenna applications 用于天线应用的大功率光电二极管
2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05. Pub Date : 2005-04-15 DOI: 10.1109/WMED.2005.1431598
P. Yu, T. Liao, G. Tzeremes, C. Christodoulou
{"title":"High power photodiode for antenna applications","authors":"P. Yu, T. Liao, G. Tzeremes, C. Christodoulou","doi":"10.1109/WMED.2005.1431598","DOIUrl":"https://doi.org/10.1109/WMED.2005.1431598","url":null,"abstract":"","PeriodicalId":164698,"journal":{"name":"2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05.","volume":"16 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123451131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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