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Spintronic-Based Memory and Logic Devices 基于自旋电子学的存储器和逻辑器件
Nanoscale Devices Pub Date : 2018-11-16 DOI: 10.1201/9781315163116-14
J. Chatterjee, P. Sethi, C. Murapaka
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引用次数: 1
Analysis of CNTFET for SRAM Cell Design SRAM单元设计中CNTFET的分析
Nanoscale Devices Pub Date : 2018-11-16 DOI: 10.1201/9781315163116-10
S. Bala, M. Khosla
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引用次数: 1
A Fundamental Overview of High Electron Mobility Transistor and Its Applications 高电子迁移率晶体管的基本概况及其应用
Nanoscale Devices Pub Date : 2018-11-16 DOI: 10.1201/9781315163116-13
D. Nirmal, J. Ajayan
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引用次数: 0
Variability in Nanoscale Technology and EδDC MOS Transistor 纳米技术的可变性和δ dc MOS晶体管
Nanoscale Devices Pub Date : 2018-11-16 DOI: 10.1201/9781315163116-2
S. Sengupta, Soumya Pandit
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引用次数: 0
Modeling of Double-Gate MOSFETs 双栅mosfet的建模
Nanoscale Devices Pub Date : 2018-11-16 DOI: 10.1201/9781315163116-6
D. Nirmal, J. Ajayan
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引用次数: 0
Effect of Ground Plane and Strained Silicon on Nanoscale FET Devices 接地面和应变硅对纳米FET器件的影响
Nanoscale Devices Pub Date : 2018-11-16 DOI: 10.1201/9781315163116-3
S. Chaudhury, Avtar Singh
{"title":"Effect of Ground Plane and Strained Silicon on Nanoscale FET Devices","authors":"S. Chaudhury, Avtar Singh","doi":"10.1201/9781315163116-3","DOIUrl":"https://doi.org/10.1201/9781315163116-3","url":null,"abstract":"","PeriodicalId":160831,"journal":{"name":"Nanoscale Devices","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126931992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Operational Characteristics of Vertically Diffused Metal Oxide Semiconductor Field Effect Transistor 垂直扩散金属氧化物半导体场效应晶体管的工作特性
Nanoscale Devices Pub Date : 2018-11-16 DOI: 10.1201/9781315163116-5
D. Bharti, A. Islam
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引用次数: 0
RRAM Devices: Underlying Physics, SPICE Modeling, and Circuit Applications * RRAM器件:基础物理，SPICE建模和电路应用*
Nanoscale Devices Pub Date : 2018-11-16 DOI: 10.1201/9781315163116-16
F. Hatem, T. N. Kumar, H. Almurib
{"title":"RRAM Devices: Underlying Physics, SPICE Modeling, and Circuit Applications *","authors":"F. Hatem, T. N. Kumar, H. Almurib","doi":"10.1201/9781315163116-16","DOIUrl":"https://doi.org/10.1201/9781315163116-16","url":null,"abstract":"","PeriodicalId":160831,"journal":{"name":"Nanoscale Devices","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125942813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of Nanoscale Transistors from Quantum and Multiphysics Perspective 从量子和多物理场的角度模拟纳米晶体管
Nanoscale Devices Pub Date : 2018-11-16 DOI: 10.1201/9781315163116-1
Zhipeng Dong, Wenchao Chen, W. Yin, Jing Guo
{"title":"Simulation of Nanoscale Transistors from Quantum and Multiphysics Perspective","authors":"Zhipeng Dong, Wenchao Chen, W. Yin, Jing Guo","doi":"10.1201/9781315163116-1","DOIUrl":"https://doi.org/10.1201/9781315163116-1","url":null,"abstract":"","PeriodicalId":160831,"journal":{"name":"Nanoscale Devices","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127937929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Ternary Logic Circuits Using CNFETs 利用cnfet设计三元逻辑电路
Nanoscale Devices Pub Date : 2018-11-16 DOI: 10.1201/9781315163116-11
C. Vudadha, M. Srinivas
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引用次数: 1
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