2012 IEEE Nanotechnology Materials and Devices Conference (NMDC2012)最新文献_第4页

Fabrication and testing of ISFET based pH sensor for microliter scale solution targets 基于ISFET的微升溶液目标pH传感器的制造与测试

2012 IEEE Nanotechnology Materials and Devices Conference (NMDC2012) Pub Date : 2012-10-01 DOI: 10.1109/NMDC.2012.6527584

Zhuxin Dong, U. Wejinya, J. Vaughan, A. M. Albrecht

{"title":"Fabrication and testing of ISFET based pH sensor for microliter scale solution targets","authors":"Zhuxin Dong, U. Wejinya, J. Vaughan, A. M. Albrecht","doi":"10.1109/NMDC.2012.6527584","DOIUrl":"https://doi.org/10.1109/NMDC.2012.6527584","url":null,"abstract":"In recent years, there has been an increasing interest in the monitoring and controlling of pH. It has become an important aspect of many industrial wastewater and water quality treatment processes. At the same time, the demand for smaller electronic devices used for various industrial, commercial, and research applications has greatly increased. In this paper, we propose a fabrication method of Ion-Sensitive Field Effect Transistor (ISFET) using MEMS techniques for pH sensing application. The novelty of this device lies in the detection of target solution with volumes in the sub-micro liter range. This achievement has the potential to satisfy the research demands in various areas including chemistry, biology and medicine. Nanomaterials, such as Carbon Nanotubes (CNTs) with excellent electrical, mechanical, and thermal properties can be incorporated to these small ISFET devices through certain nano techniques including Atomic Force Microscopy (AFM) based surface nanomachining and Dielectrophoresis (DEP). With proper electrical packaging, our ISFET chip has been able to detect the pH values of 2.5 μl solutions. The results reveal a linearity of pH measurement with a corresponding sensitivity of 10.7 mV/pH.","PeriodicalId":159995,"journal":{"name":"2012 IEEE Nanotechnology Materials and Devices Conference (NMDC2012)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122699574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Graphene for metal-semiconductor Ohmic contacts 用于金属半导体欧姆触点的石墨烯

2012 IEEE Nanotechnology Materials and Devices Conference (NMDC2012) Pub Date : 2012-10-01 DOI: 10.1109/NMDC.2012.6527583

Kyung‐Eun Byun, Seongjun Park, Heejun Yang, Hyun‐Jong Chung, H. Song, Jaeho Lee, D. Seo, J. Heo, Dongwook Lee, Hyeon-Jin Shin, Y. Woo

{"title":"Graphene for metal-semiconductor Ohmic contacts","authors":"Kyung‐Eun Byun, Seongjun Park, Heejun Yang, Hyun‐Jong Chung, H. Song, Jaeho Lee, D. Seo, J. Heo, Dongwook Lee, Hyeon-Jin Shin, Y. Woo","doi":"10.1109/NMDC.2012.6527583","DOIUrl":"https://doi.org/10.1109/NMDC.2012.6527583","url":null,"abstract":"One of the key components of modern device structures is the metal-semiconductor (MS) contact with low symmetric contact resistance. We report on a MS contact structure utilizing graphene insertion. In this strategy, graphene reduces or even eliminates in ideal conditions, the Fermi-level pinning at a MS junction. Since the metal, Ni, deposited on graphene reduced the work function of graphene, the doped graphene was able to lower the Schottky barrier at the MS junction. The Schottky barrier height of metal-graphene-Si (MGS) junction was obtained from temperature dependent I-V characteristics. We confirmed that the graphene doped with Ni reduced the Schottky barrier height from 0.67 eV to 0.20 eV in wafer scale test. We also demonstrated the formation of an ideal MGS Ohmic contact via conductive atomic force microscopy. The contact resistance of the ideal MGS was less than 1.0×10-6 Ω cm2 with low doped Si (1015 cm3). The resistance is comparable to that of a current device contact with highly doped Si. Since it only requires the insertion of a single layer of graphene, this method can be directly applied to the current Si technology to reduce the contact resistance at MS junctions.","PeriodicalId":159995,"journal":{"name":"2012 IEEE Nanotechnology Materials and Devices Conference (NMDC2012)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117287504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Self-assembly patterning of nanomaterials using electrostatic interaction in solution 溶液中静电相互作用纳米材料的自组装图像化

2012 IEEE Nanotechnology Materials and Devices Conference (NMDC2012) Pub Date : 2012-10-01 DOI: 10.1109/NMDC.2012.6527596

S. Kumagai, S. Yoshii, N. Okamoto, K. Nishio, I. Yamashita

引用次数: 0

A novel microchip filter for rare cells separation 一种用于稀有细胞分离的新型微芯片过滤器

2012 IEEE Nanotechnology Materials and Devices Conference (NMDC2012) Pub Date : 2012-10-01 DOI: 10.1109/NMDC.2012.6527597

June-Young Lee, H. Moon, T. Sim, M. S. Kim, H. Jeong, Yeon Jeong Kim, Jeong-Gun Lee, S. Baek, Jin-Mi Oh, Hun-joo Lee, Jea Chan Park, N. Huh, Soo Suk Lee

引用次数: 0

Nanomechanical bi-polar current switch 纳米机械双极电流开关

2012 IEEE Nanotechnology Materials and Devices Conference (NMDC2012) Pub Date : 2012-10-01 DOI: 10.1109/NMDC.2012.6527586

Chulki Kim, Hyuk-jae Lee, J. H. Kim, Taikjin Lee, Seok Lee, R. Blick

引用次数: 0