International Symposium on the Physical and Failure Analysis of Integrated Circuits最新文献

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Characterization and TCAD simulation of 90 nm technology transistors under continous photoelectric laser stimulation for failure analysis improvement 90 nm工艺晶体管在连续光电激光刺激下的表征和TCAD仿真,以改进失效分析
R. Llido, A. Sarafianos, O. Gagliano, V. Serradeil, V. Goubier, M. Lisart, G. Haller, V. Pouget, D. Lewis, J. Dutertre, A. Tria
{"title":"Characterization and TCAD simulation of 90 nm technology transistors under continous photoelectric laser stimulation for failure analysis improvement","authors":"R. Llido, A. Sarafianos, O. Gagliano, V. Serradeil, V. Goubier, M. Lisart, G. Haller, V. Pouget, D. Lewis, J. Dutertre, A. Tria","doi":"10.1109/IPFA.2012.6306298","DOIUrl":"https://doi.org/10.1109/IPFA.2012.6306298","url":null,"abstract":"This study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. It is therefore mandatory to understand the behavior of elementary devices to laser illumination, in order to model and predict the behavior of more complex circuits. This paper characterizes and analyses photoelectric effects induced by static 1064 nm wavelength laser on a 90 nm technology NMOS transistor. Comparisons between photocurrents in short or long channel transistor, or in function of its state (on or off) are presented. Experimental measurements are correlated to Finite Elements Modeling Technology Computer Aided Design (TCAD) analyses, which gives a physical insight of carriers generation and transport in the devices.","PeriodicalId":153805,"journal":{"name":"International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125179164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Mechanical property characterization of cu-Sn-In intermetallic thin films using microcantilevers 用微悬臂梁表征cu-Sn-In金属间膜的力学性能
W. A. Sasangka, C. L. Gan, C. V. Thompson
{"title":"Mechanical property characterization of cu-Sn-In intermetallic thin films using microcantilevers","authors":"W. A. Sasangka, C. L. Gan, C. V. Thompson","doi":"10.1109/IPFA.2011.5992788","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992788","url":null,"abstract":"Young's modulus, residual stress and fracture strength of Cu-Sn-In intermetallic thin films are characterized using deflection of microcantilevers and beam mechanics. It is shown through finite element modelling and experiments that deflection of the beams at multiple locations allows correction for non-ideality of the beams originating from the undercut, anticlastic curvature and stress gradient. This method has the advantage over common indentation-based approaches, in that with a single sample we can simultaneously extract the Young's modulus, residual stress and fracture strength of the film. Additionally, knowledge of the Poisson's ratio is not required for the calculation of the Young's modulus.","PeriodicalId":153805,"journal":{"name":"International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115146654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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