{"title":"Transient Quenching Properties of Vapor Arc Formed in Silica Sand: Contribution of Vaporized SiO2 Mixture to DC Arc Extinction Performance","authors":"Naoto Kodama, Yasunobu Yokomizu, Waku Takenaka, Koya Nakamura","doi":"10.1002/tee.24156","DOIUrl":"10.1002/tee.24156","url":null,"abstract":"<p>The current-limiting fuse uses silica (SiO<sub>2</sub>)-sand as arc quenching medium to increase a current-limiting performance during the DC arc quenching process. In order to increase the current-limiting performance of the fuse, a detailed understanding of an arc resistance <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>r</mi>\u0000 <mi>arc</mi>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$$ {r}_{mathrm{arc}} $$</annotation>\u0000 </semantics></math> rise process is necessary. This paper first carried out a 1000 A DC Cu arc quenching experiment using the silica-sand to obtain transient change in <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>r</mi>\u0000 <mi>arc</mi>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$$ {r}_{mathrm{arc}} $$</annotation>\u0000 </semantics></math>, morphology of the arc, and arc temperature <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>T</mi>\u0000 </mrow>\u0000 <annotation>$$ T $$</annotation>\u0000 </semantics></math> during the arc quenching process. As a result, a current decaying increased <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mi>r</mi>\u0000 <mi>arc</mi>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$$ {r}_{mathrm{arc}} $$</annotation>\u0000 </semantics></math>. The arc was maintained in the cavity surrounded by the fulgurite during the current decaying process. The temperature of Cu/SiO<sub>2</sub> arc was 25–8 kK at a current region of 950–400 A during the arc quenching process. Second, we theoretically calculated an electrical resistivity <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>ρ</mi>\u0000 </mrow>\u0000 <annotation>$$ rho $$</annotation>\u0000 </semantics></math>, and a thermal diffusivity <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>α</mi>\u0000 </mrow>\u0000 <annotation>$$ alpha $$</annotation>\u0000 </semantics></math> as vapor properties for the Cu/SiO<sub>2</sub> vapor mixture. As typical results, the admixing of the SiO<sub>2</sub> vapor into the Cu arc less increased <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>ρ</mi>\u0000 </mrow>\u0000 <annotation>$$ rho $$</annotation>\u0000 </semantics></math> of the Cu/SiO<sub>2</sub> vapor mixture at <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>T</mi>\u0000 </mrow>\u0000 <annotation>$$ T $$</annotation>\u0000 </semantics></math> between 25 and 5 kK. The <span></spa","PeriodicalId":13435,"journal":{"name":"IEEJ Transactions on Electrical and Electronic Engineering","volume":"19 12","pages":"1965-1975"},"PeriodicalIF":1.0,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141566585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}