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Modeling and Electrothermal Simulation of SiC Power Devices最新文献

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Introduction to Semiconductor Properties 半导体特性简介
Modeling and Electrothermal Simulation of SiC Power Devices Pub Date : 2019-03-31 DOI: 10.1142/9789813237834_0002
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引用次数: 0
Power MOSFET
Modeling and Electrothermal Simulation of SiC Power Devices Pub Date : 2019-03-31 DOI: 10.1016/B978-0-12-382036-5.00004-5
I. Batarseh
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引用次数: 20
FRONT MATTER 前页
Modeling and Electrothermal Simulation of SiC Power Devices Pub Date : 2019-03-31 DOI: 10.1142/9789813237834_fmatter
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引用次数: 0
Introduction to Silvaco© ATLAS TCAD Software Silvaco简介©ATLAS TCAD软件
Modeling and Electrothermal Simulation of SiC Power Devices Pub Date : 2019-03-31 DOI: 10.1142/9789813237834_0003
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引用次数: 0
BACK MATTER 回到问题
Modeling and Electrothermal Simulation of SiC Power Devices Pub Date : 2019-03-31 DOI: 10.1142/9789813237834_bmatter
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引用次数: 0
Simulation Models and Parameters 仿真模型与参数
Modeling and Electrothermal Simulation of SiC Power Devices Pub Date : 2019-03-31 DOI: 10.1142/9789813237834_0004
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引用次数: 0
Junction Barrier Schottky (JBS) Diode 结势垒肖特基二极管
Modeling and Electrothermal Simulation of SiC Power Devices Pub Date : 2019-03-31 DOI: 10.1142/9789813237834_0008
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引用次数: 0
Simulation and Key Factors 仿真及关键因素
Modeling and Electrothermal Simulation of SiC Power Devices Pub Date : 2019-03-31 DOI: 10.1142/9789813237834_0005
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引用次数: 0
Schottky Diode 肖特基二极管
Modeling and Electrothermal Simulation of SiC Power Devices Pub Date : 2019-03-31 DOI: 10.1142/9789813237834_0007
Akhil Punia, Ravi Sharma, Pulkit Pahwa
{"title":"Schottky Diode","authors":"Akhil Punia, Ravi Sharma, Pulkit Pahwa","doi":"10.1142/9789813237834_0007","DOIUrl":"https://doi.org/10.1142/9789813237834_0007","url":null,"abstract":"- The Schottky diode also known as hot carrier diode is a Semiconductor diode with a low forward voltage drop and a very fast switching action. The cat’s-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.When current flows through a diode thereis a small voltage drop across the diode terminals.A normal silicon diode has a voltage dropsilicon diode has a voltage drop is betweenapproximately 0.15–0.45 volts. This lowervoltage drop can provide higher switchingspeed and better system efficiency","PeriodicalId":126533,"journal":{"name":"Modeling and Electrothermal Simulation of SiC Power Devices","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115153375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
P-i-N Diode pin二极管
Modeling and Electrothermal Simulation of SiC Power Devices Pub Date : 1993-03-02 DOI: 10.1142/9789813237834_0006
Paul R. Berger, Alfred Y. Cho, Niloy K. Dutta, John E. Lopata, Jr Henry M O'bryan, D. L. Sivco, George John Zydzik, ワイ．チョー アルフレッド, ジェイ．ジドジック ジョージ, ルパタ ジョン, リー シヴェオ デボラ, ケー．ダッタ ニロイ, エム．オブライアン ジュニア ヘンリー, レイモンド バーガー ポール
{"title":"P-i-N Diode","authors":"Paul R. Berger, Alfred Y. Cho, Niloy K. Dutta, John E. Lopata, Jr Henry M O'bryan, D. L. Sivco, George John Zydzik, ワイ．チョー アルフレッド, ジェイ．ジドジック ジョージ, ルパタ ジョン, リー シヴェオ デボラ, ケー．ダッタ ニロイ, エム．オブライアン ジュニア ヘンリー, レイモンド バーガー ポール","doi":"10.1142/9789813237834_0006","DOIUrl":"https://doi.org/10.1142/9789813237834_0006","url":null,"abstract":"PURPOSE: To provide a p-i-n In0.53 Ga0.47 As photodiode, having optically transparent composite upper electrode 22 which consists of a thin semitransparent metallic layer and transparent cadmium-tin oxide(CTO). CONSTITUTION: A metallic layer 24 of 10 to 40 nm thickness forms a non-alloy ohmic contact on a semiconductor surface 18, acts as a barrier between the semiconductor and a CTO layer 25 of 90 to 600 nm thickness, and at the time of applying reactive magnetron sputtering to the CTO layer 25, the semiconductor is oxidized by oxygen contained in plasma, and the formation of a p-n junction between the semiconductor and the CTO is prevented. The CTO layer 25 acts as a p-contact an optical window and an antireflection film. Shading interference to an active layer 15, due to an upper electrode 22, is not generated and incident light can be converged more.","PeriodicalId":126533,"journal":{"name":"Modeling and Electrothermal Simulation of SiC Power Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134045320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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