Paul R. Berger, Alfred Y. Cho, Niloy K. Dutta, John E. Lopata, Jr Henry M O'bryan, D. L. Sivco, George John Zydzik, ワイ．チョー アルフレッド, ジェイ．ジドジック ジョージ, ルパタ ジョン, リー シヴェオ デボラ, ケー．ダッタ ニロイ, エム．オブライアン ジュニア ヘンリー, レイモンド バーガー ポール
{"title":"pin二极管","authors":"Paul R. Berger, Alfred Y. Cho, Niloy K. Dutta, John E. Lopata, Jr Henry M O'bryan, D. L. Sivco, George John Zydzik, ワイ．チョー アルフレッド, ジェイ．ジドジック ジョージ, ルパタ ジョン, リー シヴェオ デボラ, ケー．ダッタ ニロイ, エム．オブライアン ジュニア ヘンリー, レイモンド バーガー ポール","doi":"10.1142/9789813237834_0006","DOIUrl":null,"url":null,"abstract":"PURPOSE: To provide a p-i-n In0.53 Ga0.47 As photodiode, having optically transparent composite upper electrode 22 which consists of a thin semitransparent metallic layer and transparent cadmium-tin oxide(CTO). CONSTITUTION: A metallic layer 24 of 10 to 40 nm thickness forms a non-alloy ohmic contact on a semiconductor surface 18, acts as a barrier between the semiconductor and a CTO layer 25 of 90 to 600 nm thickness, and at the time of applying reactive magnetron sputtering to the CTO layer 25, the semiconductor is oxidized by oxygen contained in plasma, and the formation of a p-n junction between the semiconductor and the CTO is prevented. The CTO layer 25 acts as a p-contact an optical window and an antireflection film. Shading interference to an active layer 15, due to an upper electrode 22, is not generated and incident light can be converged more.","PeriodicalId":126533,"journal":{"name":"Modeling and Electrothermal Simulation of SiC Power Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"P-i-N Diode\",\"authors\":\"Paul R. Berger, Alfred Y. Cho, Niloy K. Dutta, John E. Lopata, Jr Henry M O'bryan, D. L. Sivco, George John Zydzik, ワイ．チョー アルフレッド, ジェイ．ジドジック ジョージ, ルパタ ジョン, リー シヴェオ デボラ, ケー．ダッタ ニロイ, エム．オブライアン ジュニア ヘンリー, レイモンド バーガー ポール\",\"doi\":\"10.1142/9789813237834_0006\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"PURPOSE: To provide a p-i-n In0.53 Ga0.47 As photodiode, having optically transparent composite upper electrode 22 which consists of a thin semitransparent metallic layer and transparent cadmium-tin oxide(CTO). CONSTITUTION: A metallic layer 24 of 10 to 40 nm thickness forms a non-alloy ohmic contact on a semiconductor surface 18, acts as a barrier between the semiconductor and a CTO layer 25 of 90 to 600 nm thickness, and at the time of applying reactive magnetron sputtering to the CTO layer 25, the semiconductor is oxidized by oxygen contained in plasma, and the formation of a p-n junction between the semiconductor and the CTO is prevented. The CTO layer 25 acts as a p-contact an optical window and an antireflection film. Shading interference to an active layer 15, due to an upper electrode 22, is not generated and incident light can be converged more.\",\"PeriodicalId\":126533,\"journal\":{\"name\":\"Modeling and Electrothermal Simulation of SiC Power Devices\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-03-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Modeling and Electrothermal Simulation of SiC Power Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1142/9789813237834_0006\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Modeling and Electrothermal Simulation of SiC Power Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/9789813237834_0006","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
PURPOSE: To provide a p-i-n In0.53 Ga0.47 As photodiode, having optically transparent composite upper electrode 22 which consists of a thin semitransparent metallic layer and transparent cadmium-tin oxide(CTO). CONSTITUTION: A metallic layer 24 of 10 to 40 nm thickness forms a non-alloy ohmic contact on a semiconductor surface 18, acts as a barrier between the semiconductor and a CTO layer 25 of 90 to 600 nm thickness, and at the time of applying reactive magnetron sputtering to the CTO layer 25, the semiconductor is oxidized by oxygen contained in plasma, and the formation of a p-n junction between the semiconductor and the CTO is prevented. The CTO layer 25 acts as a p-contact an optical window and an antireflection film. Shading interference to an active layer 15, due to an upper electrode 22, is not generated and incident light can be converged more.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
