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2009 Spanish Conference on Electron Devices最新文献

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Towards Nano-Fin based Mercury-Sensors 基于纳米鳍的汞传感器
2009 Spanish Conference on Electron Devices Pub Date : 2009-03-16 DOI: 10.1109/SCED.2009.4800502
L. Keller, K. Kallis, Horst L. Fieder, J. Knoch
{"title":"Towards Nano-Fin based Mercury-Sensors","authors":"L. Keller, K. Kallis, Horst L. Fieder, J. Knoch","doi":"10.1109/SCED.2009.4800502","DOIUrl":"https://doi.org/10.1109/SCED.2009.4800502","url":null,"abstract":"With the here presented sensor-concept it is possible to produce a low-cost mercury-sensor, based on a lithography-independent structured poly-silicon nanometer-scale fin. Using the increase of electrical resistance of a gold-layer being exposed to mercury-vapor, the exposition to mercury resulting in the amalgamation of the gold-layer can be detected. Giving the ability of regeneration to the here presented sensor, the mercury must be driven out of the gold-layer which can be achieved by heating-up the layer to a temperature over 150 °C. Shrinking the sensor to nanometer-dimensions gives the benefit of a small mass of gold, small dimensions of the sensor resulting in a good surface-area-to-volume-ratio (SAVR) and low-power consumption during regeneration-cycle.","PeriodicalId":125207,"journal":{"name":"2009 Spanish Conference on Electron Devices","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114977088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
GaN/AlN Axial Multi Quantum Well Nanowires for Optoelectronic Devices 光电器件用GaN/AlN轴向多量子阱纳米线
2009 Spanish Conference on Electron Devices Pub Date : 2009-03-16 DOI: 10.1109/SCED.2009.4800430
S. Conesa‐Boj, J. Arbiol, F. Furtmayr, C. Stark, S. Schafer, M. Stutzmann, M. Eickhoff, F. Peiró, J. Morante
{"title":"GaN/AlN Axial Multi Quantum Well Nanowires for Optoelectronic Devices","authors":"S. Conesa‐Boj, J. Arbiol, F. Furtmayr, C. Stark, S. Schafer, M. Stutzmann, M. Eickhoff, F. Peiró, J. Morante","doi":"10.1109/SCED.2009.4800430","DOIUrl":"https://doi.org/10.1109/SCED.2009.4800430","url":null,"abstract":"III¿ nitride based Quantum Wells (QWs) have been extensively studied as active buildings blocks for different electronic and optoelectronic devices. Several samples of GaN/AIN Axial Multi Quantum Well nanowires (MQW NWs) have been synthesized, leading to NWs with a MQW structure with GaN wells of different widths along the growth axis, 1.5, 2,3 and 4 nm. In this work structural and optical properties are studied by means of high resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) analysis respectively.","PeriodicalId":125207,"journal":{"name":"2009 Spanish Conference on Electron Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127452487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The Design of an Infrared Sensor for the Measurement of Martian Surface Temperature and Gas Concentration 火星表面温度和气体浓度红外传感器的设计
2009 Spanish Conference on Electron Devices Pub Date : 2009-03-16 DOI: 10.1109/SCED.2009.4800491
J. M. Aranda, A. J. de Castro, J. Meléndez, Francisco Cortés, Isabel Fernaindez-Gomez, F. López
{"title":"The Design of an Infrared Sensor for the Measurement of Martian Surface Temperature and Gas Concentration","authors":"J. M. Aranda, A. J. de Castro, J. Meléndez, Francisco Cortés, Isabel Fernaindez-Gomez, F. López","doi":"10.1109/SCED.2009.4800491","DOIUrl":"https://doi.org/10.1109/SCED.2009.4800491","url":null,"abstract":"Design considerations for a temperature sensor to be launched onboard the space mission MetNet precursor to Mars are presented. An IR multispectral sensor has been proposed to measure Martian surface temperature to an accuracy of ±1 K without knowing ground emissivity. Two methods for temperature retrieval have been assessed, both relying on comparative measurements at two wavelengths and/or two temperatures. Spectral calculations of surface emission and atmospheric absorption-emission have been made with a simple Martian atmosphere model, and signal to noise ratios have been estimated at transparent wavelengths for several temperatures. Temperature accuracy has been derived for the two methods, showing that bi-color pyrometry has in principle the ability to provide the desired temperature accuracy for reasonable values of sensor detectivity, field of view and spectral filter width, for T≫200 K. This sensor can be applied also to estimate CO2 concentrations in the Martian atmosphere, by comparing signals measured at CO2 absorption and transparent bands.","PeriodicalId":125207,"journal":{"name":"2009 Spanish Conference on Electron Devices","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125312128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Monolithic Ceramic Technology for Sensing Devices 传感器件的单片陶瓷技术
2009 Spanish Conference on Electron Devices Pub Date : 2009-03-16 DOI: 10.1109/SCED.2009.4800489
F. Ramos, C. López-Gándara, A. Cirera, J. Morante
{"title":"Monolithic Ceramic Technology for Sensing Devices","authors":"F. Ramos, C. López-Gándara, A. Cirera, J. Morante","doi":"10.1109/SCED.2009.4800489","DOIUrl":"https://doi.org/10.1109/SCED.2009.4800489","url":null,"abstract":"We present a multilayer co-fired ceramic technology for the development of alumina-based gas sensors substrates. These substrates include embedded heater and thermo-resistance as well as electrodes in a 2x2mm dice. Substrate thickness is less than 0.2mm. The substrate technology allows obtaining smooth surface at the nanometer scale. As an example of application, we have studied the growth of nanowires on the presented structure to take advantage of nanoscale phenomena.","PeriodicalId":125207,"journal":{"name":"2009 Spanish Conference on Electron Devices","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116824968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Modeling and simulation of CMOS APS CMOS APS的建模与仿真
2009 Spanish Conference on Electron Devices Pub Date : 2009-03-16 DOI: 10.1109/SCED.2009.4800445
B. Blanco-Filgueira, P. López, D. Cabello, J. Ernst, H. Neubauer, J. Hauer
{"title":"Modeling and simulation of CMOS APS","authors":"B. Blanco-Filgueira, P. López, D. Cabello, J. Ernst, H. Neubauer, J. Hauer","doi":"10.1109/SCED.2009.4800445","DOIUrl":"https://doi.org/10.1109/SCED.2009.4800445","url":null,"abstract":"This work studies the importance of the peripheral collection in the overall photoresponse in deep sub-micron CMOS 3T Active Pixel Sensors (APS), focusing on the contribution of the bottom surface of the depletion region. We analyze a semi-analytical expression, inspired by previous works, that models the photoresponse of a set of fabricated pixels with octagonal photodiodes that could be easily extended to different geometries. Device simulation results are used to study the behaviour of these structures with the purpose of using Computer Aided Design (CAD) tools for the next technological nodes researchs.","PeriodicalId":125207,"journal":{"name":"2009 Spanish Conference on Electron Devices","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128477210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Logarithmic Compensated Voltage Reference 对数补偿电压基准
2009 Spanish Conference on Electron Devices Pub Date : 2009-03-16 DOI: 10.1109/SCED.2009.4800469
C. Popa
{"title":"Logarithmic Compensated Voltage Reference","authors":"C. Popa","doi":"10.1109/SCED.2009.4800469","DOIUrl":"https://doi.org/10.1109/SCED.2009.4800469","url":null,"abstract":"Very important stages in applications such as A/D and D/A converters, data acquisition systems, memories or smart sensors, voltage reference circuits [1]-[3] and theirs temperature behavior are intensively studied in the last decade and many researches have been developed for improving them. The new proposed realization of a CMOS voltage reference uses a gate-source voltage of a MOS transistor working in weak inversion as CTAT voltage generator. The idea is that the negative linear dependent term from VGS (T) expression to be compensated by V¿oltage F¿ollower) block. The new curvature-correction technique proposes the compensation of the nonlinear temperature dependence of the gate-source voltage using an original block, ADA (A¿symmetric ¿ifferential A¿mplifier), biased at drain currents with different temperature dependencies.","PeriodicalId":125207,"journal":{"name":"2009 Spanish Conference on Electron Devices","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128699208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Equivalent circuit model for capacitances in PN varactors with buried channel 埋道PN变容管电容等效电路模型
2009 Spanish Conference on Electron Devices Pub Date : 2009-03-16 DOI: 10.1109/SCED.2009.4800535
M. Marrero-Martin, J. García, B. González, A. Hernaindez
{"title":"Equivalent circuit model for capacitances in PN varactors with buried channel","authors":"M. Marrero-Martin, J. García, B. González, A. Hernaindez","doi":"10.1109/SCED.2009.4800535","DOIUrl":"https://doi.org/10.1109/SCED.2009.4800535","url":null,"abstract":"In this work, varactors based on PN junction cells have been studied in order to obtain a capacitance model for radiofrequency applications. These cells are unit cells: the minimum structure that can be considered a varactor, including all necessary layers and connections. Then, a specific capacitance for a radiofrequency integrated circuit (RFIC) is obtained horizontally and vertically overlapping the necessary cells. Our circuit model estimates the total capacitance in a varactor, from two ports, considering all relevant internal contributions. Three varactors based on the same cell have been designed and fabricated in 0.35¿m SiGe technology. These novel structures were also on-wafer measured for frequencies ranging between 0.5 to 10GHz, and voltages varying from 0 to-5V. This circuit model predicts the capacitance in all cases with relative error under than 4%.","PeriodicalId":125207,"journal":{"name":"2009 Spanish Conference on Electron Devices","volume":"17 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127038637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Improvement of the k.p Approach for Describing Silicon Quantum Dots 描述硅量子点的k.p方法的改进
2009 Spanish Conference on Electron Devices Pub Date : 2009-03-16 DOI: 10.1109/SCED.2009.4800446
S. Rodríguez-Bolívar, F. Gómez-Campos, A. Luque-Rodríguez, J. A. López-Villanueva, J. A. Jiménez-Tejada, P. Lara-Bullejos, J. E. Carceller
{"title":"Improvement of the k.p Approach for Describing Silicon Quantum Dots","authors":"S. Rodríguez-Bolívar, F. Gómez-Campos, A. Luque-Rodríguez, J. A. López-Villanueva, J. A. Jiménez-Tejada, P. Lara-Bullejos, J. E. Carceller","doi":"10.1109/SCED.2009.4800446","DOIUrl":"https://doi.org/10.1109/SCED.2009.4800446","url":null,"abstract":"We present in this work a correction to the Effective Mass Approach based on atomistic calculations for studies on hole confinement in silicon quantum dots. The idea is to connect two different frameworks such as Tight-Binding and k.p in order to take advantage of the computational efficiency of the latter. Further, this work would enable to gain an insight into the causes of difference between both approaches.","PeriodicalId":125207,"journal":{"name":"2009 Spanish Conference on Electron Devices","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127728626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ohmic Contacts to implanted GaN 植入GaN的欧姆触点
2009 Spanish Conference on Electron Devices Pub Date : 2009-03-16 DOI: 10.1109/SCED.2009.4800429
M. Placidi, A. Pérez‐Tomás, A. Constant, G. Rius, N. Mestres, J. Millán, P. Godignon
{"title":"Ohmic Contacts to implanted GaN","authors":"M. Placidi, A. Pérez‐Tomás, A. Constant, G. Rius, N. Mestres, J. Millán, P. Godignon","doi":"10.1109/SCED.2009.4800429","DOIUrl":"https://doi.org/10.1109/SCED.2009.4800429","url":null,"abstract":"Ohmic contacts with low resistivity values to Si implanted GaN have been performed using a metal combination of Ti/Al. Different protection caps have been used during post-implantation annealing and their influences to the specific contact resistivity (¿c) have been investigated. After the metal alloying, noticeable differences have been observed between the protected sample with SiO2 and unprotected sample during the post-implantation annealing. The unprotected sample has shown lower values of ¿c but with very low reproducibility, while, by contrast, the use of SiO2 cap has revealed the achievement of a low ¿c around 10-5 ¿.cm2 with very good uniformity. Based on the results obtained from electrical measurements, XRD (X-ray diffraction) analysis, AFM (atomic force microscopy) and SEM (scanning electron microscopy) observations, we discuss the mechanism for the uniformity in ¿c.","PeriodicalId":125207,"journal":{"name":"2009 Spanish Conference on Electron Devices","volume":"334 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131545303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Monolithic micro fuel cells as integrated power sources in MEMS 单片微燃料电池作为集成电源在MEMS中的应用
2009 Spanish Conference on Electron Devices Pub Date : 2009-03-16 DOI: 10.1109/SCED.2009.4800521
N. Torres-Herrero, J. Santander, N. Sabaté, J. Esquivel, A. Tarancón, I. Garbayo, I. Gràcia, C. Cané
{"title":"Monolithic micro fuel cells as integrated power sources in MEMS","authors":"N. Torres-Herrero, J. Santander, N. Sabaté, J. Esquivel, A. Tarancón, I. Garbayo, I. Gràcia, C. Cané","doi":"10.1109/SCED.2009.4800521","DOIUrl":"https://doi.org/10.1109/SCED.2009.4800521","url":null,"abstract":"The increasing interest in fully integrated electronic systems for portable applications has originated new research developments in micropower sources. In this context, micro fuel cells arise as a promising solution for the power supply of portable microsystems [1,2]. The main issue in order to use such devices for this purpose is to be able to fabricate them by using a monolithic architecture compatible with the standard microfabrication processes. In order to do this for PEM type fuel cells, one of the first topics to cover is the fabrication of the membrane with microfabrication compatible processes. This paper explains the results achieved with a first hybrid demonstrator of a direct methanol micro fuel cell (µDMFC) and two different approaches for new monolithic micro fuel cells.","PeriodicalId":125207,"journal":{"name":"2009 Spanish Conference on Electron Devices","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131583307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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