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2016 International Conference on Microelectronics, Computing and Communications (MicroCom)最新文献

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Characterisation of field plated high electron mobility transistor 场镀高电子迁移率晶体管的特性
2016 International Conference on Microelectronics, Computing and Communications (MicroCom) Pub Date : 2016-07-28 DOI: 10.1109/MICROCOM.2016.7522455
Saurav Kumar, Vikash Kumar, A. Islam
{"title":"Characterisation of field plated high electron mobility transistor","authors":"Saurav Kumar, Vikash Kumar, A. Islam","doi":"10.1109/MICROCOM.2016.7522455","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522455","url":null,"abstract":"The paper proposes the structure and analysis of SiNx passivated AlGaN/AlN/GaN High Electron Mobility Transistor (HEMT), which exhibits minimal OFF state leakage current and has very low characteristic threshold voltage. Analysis of SiNx passivated AlGaN/AlN/GaN HEMT, with gate to drain separation of 10 μm, was done using Silvaco ATLAS™ CAD tools. The proposed device exhibits a peak drain current of 3.6 mA/μm and a steep sub-threshold slope of 62.5 mV/dec. The device ON to OFF current ratio is 1014. Lower threshold voltage implies greater ON-state current and significantly proficient device ON/OFF switching. The device structure proposed in the paper employs field plate technology, which is known to considerably increase the device breakdown voltage. Output characteristic curves suggest absence of breakdown up to 100 V. The proposed device incorporates a spacer layer of AlN to counter the decrease in mobility due to increasing 2-Dimensional Electron Gas (2-DEG) density at the interface of AlGaN and GaN layers.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126801614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
SiRF technology for satellite and RADAR use 用于卫星和雷达的SiRF技术
2016 International Conference on Microelectronics, Computing and Communications (MicroCom) Pub Date : 2016-07-28 DOI: 10.1109/MICROCOM.2016.7522492
A. Karmakar
{"title":"SiRF technology for satellite and RADAR use","authors":"A. Karmakar","doi":"10.1109/MICROCOM.2016.7522492","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522492","url":null,"abstract":"This paper explores the possibility of using silicon as a viable substrate for future RF/microwave applications in communication, defense and air-borne systems. Basic study on substrate characteristics has been outlined here. Single as well as multiple frequency bands have been targeted for some commonly used RF circuits. Experimental results give an overview of the performance of these circuits on silicon substrate are at par with its conventional counterparts in microwave substrate group. Printed and micro-machined versions of the passive devices have made silicon an attractive choice for future system realization.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128445408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A single-phase cascaded H-Bridge inverter for grid-tie photovoltaic system addressing the problem of unbalances in H-Bridge cells 一种用于并网光伏系统的单相级联h桥逆变器，解决了h桥电池的不平衡问题
2016 International Conference on Microelectronics, Computing and Communications (MicroCom) Pub Date : 2016-07-28 DOI: 10.1109/MICROCOM.2016.7522517
Haimanti Bhattacherjee, Jayaram Nakka
{"title":"A single-phase cascaded H-Bridge inverter for grid-tie photovoltaic system addressing the problem of unbalances in H-Bridge cells","authors":"Haimanti Bhattacherjee, Jayaram Nakka","doi":"10.1109/MICROCOM.2016.7522517","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522517","url":null,"abstract":"This paper presents the performance of single-phase modular cascaded H-Bridge five level inverter for grid-tie photovoltaic applications. Two H-Bridge cells are cascaded, each cell connected to a string of PV panels. The control scheme adopted maximizes the power transferred from the PV cell to the utility, via the grid, generates a sinusoidal current with minimum harmonic distortion, which is fed to the grid and balances the DC link voltage of each H-Bridge Cell (HBC). Maximum power point is tracked in the PV system using MPPT (Maximum Power Point Tracking) algorithm. The performance of the adopted control scheme has been investigated through MATLAB Simulations.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133721311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Achievement of various bands at the UltraWideband range: Design of an UltraWideband antenna using the concept of band-notching 在超宽带范围内实现各种频带:使用带陷波概念的超宽带天线设计
2016 International Conference on Microelectronics, Computing and Communications (MicroCom) Pub Date : 2016-07-28 DOI: 10.1109/MICROCOM.2016.7522452
A. Patro, P. Suraj, B. R. Behera
{"title":"Achievement of various bands at the UltraWideband range: Design of an UltraWideband antenna using the concept of band-notching","authors":"A. Patro, P. Suraj, B. R. Behera","doi":"10.1109/MICROCOM.2016.7522452","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522452","url":null,"abstract":"In this paper, the authors had showcased out their work with a stringent effort of achieving Dual-Bands using the concept of Band-Notch for specifically designed Ultra Wideband Antenna. Here they had showed that the designed antenna been working for two bands i.e. WiMAX (Worldwide Interoperability for Microwave Access) working at S-Band and WLAN (Wireless Local Area Network) working at C-Band. To achieve out a clean illustration in terms of avoiding out the interference, Notch-Band especially at frequency domain had been generated. Along with it the designed antenna uses FR-4 as substrate and they had used IE3D software for carrying out the investigation of the parameter like the Return Loss in terms of dB, Current Distribution and Radiation Pattern. After this, the authors had fabricated out the prototype using standard methodology where the authors found absolute matching between the Simulated Results and Measured Results citing out the exactness in terms of working of Antenna.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117314604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An enhancement mode GaN MOSFET with AlGaN/GaN heterostructure 一种具有AlGaN/GaN异质结构的增强模式GaN MOSFET
2016 International Conference on Microelectronics, Computing and Communications (MicroCom) Pub Date : 2016-07-28 DOI: 10.1109/MICROCOM.2016.7522529
Arun Sunny, S. S. Chauhan
{"title":"An enhancement mode GaN MOSFET with AlGaN/GaN heterostructure","authors":"Arun Sunny, S. S. Chauhan","doi":"10.1109/MICROCOM.2016.7522529","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522529","url":null,"abstract":"An enhancement mode GaN MOSFET with AlGaN/GaN heterostructure for excessive frequency and excessive power applications is designed. The huge 2 dimensional electron gas density obtained at the AlGaN/GaN heterostructure helps to carry more output current, which needs for high output power generation. Normally off behaviour of the device is obtained by the replacement of AlGaN barrier layer with gate insulator, which helps to reduce the power dissipation from the device. Initial Two Dimensional simulations in Sentaurus TCAD showed that the threshold voltage of the device is nearly 0.6V and output current obtained is about 4.5×10-2 A at 10 V gate supply.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129610480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Improved speculative Apriori with percentiles algorithm for website restructuring based on usage patterns 基于使用模式的网站重构改进的投机Apriori与百分位数算法
2016 International Conference on Microelectronics, Computing and Communications (MicroCom) Pub Date : 2016-07-28 DOI: 10.1109/MICROCOM.2016.7522569
Gaurav Gahlot, S. Kamath
{"title":"Improved speculative Apriori with percentiles algorithm for website restructuring based on usage patterns","authors":"Gaurav Gahlot, S. Kamath","doi":"10.1109/MICROCOM.2016.7522569","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522569","url":null,"abstract":"Web structure mining techniques are popularly used in the process of improved website design/replanning based on user browsing actions. In this paper, an algorithm for improving the design map (site map of a Website) using the pertinent information available in the website's server logs is proposed, that incorporates probability for extending the well-known Apriori Algorithm. The proposed methodology harnesses the normal distribution curve used in statistical measurements to improve recommendation accuracy after parsing the server log file. This allows the discovery of more association rules as the idea is to use percentile calculations instead of the percentages and having a relative quest within the item sets to determine their existence in the domain. By enforcing the percentile calculations on the distribution curve of the collection, selective items from the small groups within can be obtained. Experimental results for the proposed Speculative Apriori with Percentiles Algorithm (SAwP) indicate that it was effective in discovering relevant itemsets and more association rules, when compared to classical Apriori algorithm.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116673488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Acceleration characterization of dual purpose gyro/accelerometer device using MS3110 differential capacitive read out IC 使用MS3110差分电容读出IC的双用途陀螺仪/加速度计器件的加速度特性
2016 International Conference on Microelectronics, Computing and Communications (MicroCom) Pub Date : 2016-07-28 DOI: 10.1109/MICROCOM.2016.7522428
P. Verma, M. A. Butt, S. Khonina, N. Kazanskiy, K. Z. Khan, R. Gopal
{"title":"Acceleration characterization of dual purpose gyro/accelerometer device using MS3110 differential capacitive read out IC","authors":"P. Verma, M. A. Butt, S. Khonina, N. Kazanskiy, K. Z. Khan, R. Gopal","doi":"10.1109/MICROCOM.2016.7522428","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522428","url":null,"abstract":"Chip size is an important factor considered for implementation in any system for navigational aid. Dual purpose device such as gyro/accelerometer has increased the interest of researchers to reduce the size of the chip, while serving both the functions of gyroscope and accelerometer. This paper presents the design, dynamics and experimental characterization of the acceleration response of 2-DOF drive mode and 1-DOF sense mode with inner anchoring gyroscope structure. It has been demonstrated that the same structure can be used for acceleration measurement as well; hence it can be regarded as gyro/accelerometer. Testing has been carried out by interfacing the sensor chip with MS3110 differential capacitive read out IC and evaluation board. An out-of-plane shaker (make-LDS) was used to produce vibrations with a sinusoidal profile to characterize the sensors.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130438735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Power control in underlay cooperative cognitive radio network under shadowing 阴影下底层协同认知无线网络的功率控制
2016 International Conference on Microelectronics, Computing and Communications (MicroCom) Pub Date : 2016-07-28 DOI: 10.1109/MICROCOM.2016.7522439
Gopal Chandra Das, A. Bhowmick, S. D. Roy, S. Kundu
{"title":"Power control in underlay cooperative cognitive radio network under shadowing","authors":"Gopal Chandra Das, A. Bhowmick, S. D. Roy, S. Kundu","doi":"10.1109/MICROCOM.2016.7522439","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522439","url":null,"abstract":"In this paper, power control of secondary user (SU) is investigated. In co-existing network, minimization of interference on primary user (PU) can be achieved through controlling the transmission power of cognitive radio (CR) user. Improved sensing decision reduces the interference on PU (IoPU) efficiently through improved energy detector (IED) based cooperative spectrum sensing (CSS). Allowable maximum transmission power of CR is estimated. The effect of shadowing and number of CR in CSS is evaluated in connection with the control of CR transmission power.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131884738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Negative inductance simulator using OTRA 使用OTRA的负感模拟器
2016 International Conference on Microelectronics, Computing and Communications (MicroCom) Pub Date : 2016-07-28 DOI: 10.1109/MICROCOM.2016.7522486
B. Nagar, S. K. Paul
{"title":"Negative inductance simulator using OTRA","authors":"B. Nagar, S. K. Paul","doi":"10.1109/MICROCOM.2016.7522486","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522486","url":null,"abstract":"In this paper single operational transresistance amplifier based lossless grounded negative inductance simulator topology is presented. The proposed circuit employs only single OTRA and four passive elements. The circuit is studied for nonideality and high frequency self compensation is achieved. Theoretical propositions are verified by simulation.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129805045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A novel approach to design convolution encoder using quantum-dot cellular automata 一种利用量子点元胞自动机设计卷积编码器的新方法
2016 International Conference on Microelectronics, Computing and Communications (MicroCom) Pub Date : 2016-07-28 DOI: 10.1109/MICROCOM.2016.7522479
Riya Sen, Sandip Das
{"title":"A novel approach to design convolution encoder using quantum-dot cellular automata","authors":"Riya Sen, Sandip Das","doi":"10.1109/MICROCOM.2016.7522479","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522479","url":null,"abstract":"Quantam-dot cellular automata is a promising nano electronic computational architecture which can be used to process binary information. It performs binary operation using single electrons in arrays of quantum dots. The basic building block in QCA design is a QCA cell which can be used to build basic gates, as well as combinational and sequential circuits. In this paper, design of a real time application of processing information bits in a serial manner, i.e. a convolution encoder is proposed. Convolution codes are the most powerful and widely used class of codes used in today's popular wireless standard (such as IEEE 802.11) along with variety of other systems. Convolution encoder works on serial data and uses shift registers and associated combinational logic that performs modulo-2-addition. In this paper, a novel design of ½ rate and 1/3 rate convolution encoder is proposed using QCA and simulation results are shown.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124743532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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