Omar Awad, A. ElSinawi, M. Bakri-Kassem, T. Landolsi
{"title":"Feedback control of membrane displacement in RF-MEMS switches","authors":"Omar Awad, A. ElSinawi, M. Bakri-Kassem, T. Landolsi","doi":"10.1109/ICECS.2013.6815465","DOIUrl":"https://doi.org/10.1109/ICECS.2013.6815465","url":null,"abstract":"Control of transient behavior of RF-MEMS switch membrane is crucial to the durability and reliability of the switch. This work presents a novel technique for controlling the displacement of the switch membrane. The technique shows exceptional capabilities of achieving soft landing of the membrane on contact pads at pull-in voltage, and significant improvement of pull-out transient. The control technique presented in this work is physical based and generic in nature, thus making it adaptable and scalable to any switch. Comparison between switch behavior with and without control shows 80% improvement in impact dynamics and approximately 70% improvement in overshoot and settling time during pull-out.","PeriodicalId":117453,"journal":{"name":"2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)","volume":"488 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115297247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Victor Dupuy, E. Kerhervé, N. Deltimple, B. Mallet-Guy, Y. Mancuso, P. Garrec
{"title":"A 2.4GHz to 6GHz active balun in GaN technology","authors":"Victor Dupuy, E. Kerhervé, N. Deltimple, B. Mallet-Guy, Y. Mancuso, P. Garrec","doi":"10.1109/ICECS.2013.6815495","DOIUrl":"https://doi.org/10.1109/ICECS.2013.6815495","url":null,"abstract":"This article presents a S-C band active balun in a GaN integrated technology. Based on a differential pair this circuit realizes the single to differential conversion. Moreover this circuit can be used as preamplifier to drive a power stage. It delivers more than 25dBm in each differential path in the [2,4GHz-6GHz] band with a maximum of 29dBm at 3.8GHz. The chip has been realized in the UMS GH25 process, a GaN HEMT technology with a 0.25μm gate length.","PeriodicalId":117453,"journal":{"name":"2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115476507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sherif H. Abdel Haleem, A. Radwan, S. Abd-El-Hafiz
{"title":"Design of pseudo random keystream generator using fractals","authors":"Sherif H. Abdel Haleem, A. Radwan, S. Abd-El-Hafiz","doi":"10.1109/ICECS.2013.6815554","DOIUrl":"https://doi.org/10.1109/ICECS.2013.6815554","url":null,"abstract":"This paper presents a novel method for designing a pseudo random keystream generator (PRKG) based on fractal images. Although a fractal image has high correlation between its pixels, the proposed technique succeeds in almost eliminating this correlation and the output stream passes the NIST statistical test suite. The post-processing on the fractals is based only on a confusion process and uses a nonlinear network with a delay block to randomize the output stream. Many statistical measures and the NIST suite have been used to evaluate the processed fractals and the results are promising. As an example to validate the PRKG, the output stream is used in a simple image encryption system. The encrypted image is tested by calculating pixel correlations, differential attack measures, entropy and it also passes the NIST test suite.","PeriodicalId":117453,"journal":{"name":"2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)","volume":"58 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120809109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Daniel Zammit, O. Casha, I. Grech, E. Gatt, J. Micallef
{"title":"A MEMS resonator tank for an RF VCO application","authors":"Daniel Zammit, O. Casha, I. Grech, E. Gatt, J. Micallef","doi":"10.1109/ICECS.2013.6815540","DOIUrl":"https://doi.org/10.1109/ICECS.2013.6815540","url":null,"abstract":"This paper presents the design and study of a MEMS tapped-inductor LC resonator tank, proposed to evaluate the improved performance over that generally achieved in standard CMOS passive component integration. The resonator tank, consisting of a fixed-value inductor and a variable capacitor, was implemented in the MetalMUMPs process and was targeted for a VCO intended for telemetry applications. A geometrically optimized 1.25 nH horseshoe inductor was designed and results show that it exhibits a Q-factor of 63 at 7.3 GHz and a self-resonating frequency of 17.6 GHz. In addition, an improved π-inductor model is proposed for design and simulation purposes. The variable capacitor was designed in a parallel-plate topology, using four serpentine springs. The capacitance can be varied from 0.183 pF to 0.245 pF with an actuation voltage in the range of 0 V-to-11.7 V. A Q-factor of 62 at 1.1 GHz and a self-resonating frequency above 10 GHz were achieved. The designed inductor and capacitor were configured in a resonator tank topology yielding an overall Q-factor of 22 at 4.9 GHz.","PeriodicalId":117453,"journal":{"name":"2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123457628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. V. A. D. Almeida, Andrea Barretto, L. A. D. Lacerda, R. Tutu, Valmiro Galvis, Julio Aguiar, João Souza
{"title":"Generic integrated circuit for signal conditioning","authors":"C. V. A. D. Almeida, Andrea Barretto, L. A. D. Lacerda, R. Tutu, Valmiro Galvis, Julio Aguiar, João Souza","doi":"10.1109/ICECS.2013.6815428","DOIUrl":"https://doi.org/10.1109/ICECS.2013.6815428","url":null,"abstract":"This paper presents a complete analog signal conditioning chip, called BONFIM IC, fabricated in 0.5 μm AMIS CMOS process. The conditioning circuit architecture here presented is composed by one differential amplifier and one buffer circuit. The differential amplifier, major part of total circuit, is responsible by amplifying the input signal as well to provide a DC level for it. Thus, adjusting it for excursion in range between 0 V and a reference voltage value defined. The input signal being measured comes from external environment, like a data acquisition system. The buffer circuit makes a copy of the output voltage from the differential amplifier at its own low impedance output, providing analog signal for an analog to digital converter. The chip can be used in measurement of large and small analog signals or in data acquisition systems.","PeriodicalId":117453,"journal":{"name":"2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125514907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Extended abstract: Theorem proving verification of privacy in WBSN for healthcare systems","authors":"H. A. Hamadi, A. Gawanmeh, M. Al-Qutayri","doi":"10.1109/ICECS.2013.6815362","DOIUrl":"https://doi.org/10.1109/ICECS.2013.6815362","url":null,"abstract":"This extended abstract presents a work in progress on improving the verification of the security requirements of Wireless Body Sensor Network (WBSN) in healthcare systems. Our investigation on this shows that most researchers are mainly using simulation to test healthcare systems. However, lack of simulation frameworks that support security, makes this method an improper technique to verify security in WBSN. Thus, a formal verification technique is proposed in this work for the verification of security aspects in healthcare systems. We adopt a firstorder theorem proving method (Event-B) to model WBSN and verify security requirements such as privacy at different levels of abstraction.","PeriodicalId":117453,"journal":{"name":"2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115096161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hong Liu, Ning Tang, Mingliang Wang, Zhao Xia, Ke Zhang, T. Tong
{"title":"A monolithic 12-bit digitally calibrated D/A converter","authors":"Hong Liu, Ning Tang, Mingliang Wang, Zhao Xia, Ke Zhang, T. Tong","doi":"10.1109/ICECS.2013.6815451","DOIUrl":"https://doi.org/10.1109/ICECS.2013.6815451","url":null,"abstract":"A 12-bit monolithic D/A converter has been developed. The principle of proportional match design in the resistor switch network, its structural characteristics and the resistor network for calibration are elaborated. In order to cancel the variation of switch network resistance value caused by process, temperature and voltage, a new calibration circuit has been proposed. Finally this paper proposed an automatic calibration algorithm based on fuse trim, which can significantly improve the efficiency of trimming and lower the cost of DAC chip. Simulation results show that the linear error, differential error and full scale error of the converter all meet the requirements of 12-bit resolution. Operating at 15V, the DAC achieves a settling time of 1us for full scale voltage.","PeriodicalId":117453,"journal":{"name":"2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115323426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A simplified computational model for solid-state lithium microbatteries","authors":"Mohammed Shemsu Nesro, I. Elfadel","doi":"10.1109/ICECS.2013.6815517","DOIUrl":"https://doi.org/10.1109/ICECS.2013.6815517","url":null,"abstract":"Lithium microbatteries are replacing conventional power sources in many microsystems areas such as wireless sensors and biomedical monitors [1-2]. In many of these applications, compact models of microbatteries are needed both at the microsystems design stage and at the real-time power management stage. These compact models are typically derived from physics-based discretized formulations. We have developed a simplified partial-differential equation (PDE) model for an allsolid state Li metal microbattery. The simplified PDE model was solved using a finite-difference scheme implemented in Matlab. The simplified model is within 2% of the full non-linear model yet runs 6 times faster.","PeriodicalId":117453,"journal":{"name":"2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116717861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Azghadi, S. Al-Sarawi, D. Abbott, Nicolangelo Iannella
{"title":"Pairing frequency experiments in visual cortex reproduced in a neuromorphic STDP circuit","authors":"M. Azghadi, S. Al-Sarawi, D. Abbott, Nicolangelo Iannella","doi":"10.1109/ICECS.2013.6815396","DOIUrl":"https://doi.org/10.1109/ICECS.2013.6815396","url":null,"abstract":"Previous studies show that the conventional pair-based form of STDP (PSTDP), is not able to account for many biological experiments including frequency-dependent pairing experiments performed in the visual cortex region of the brain. However, new improved synaptic plasticity rules, such as Triplet-based Spike Timing Dependent Plasticity (TSTDP), are capable of replicating many biological experiments outcomes including the results of the experiments carried out in the visual cortex. This paper proposes a programmable analog neuromorphic circuit, which is capable of reproducing pairing frequency experiments in the visual cortex. The circuit utilizes transistors working in their subthreshold region of operation. In addition, it implements a minimal model TSTDP learning rule, which needs a low number of transistors compared to its PSTDP circuit counterparts. These features result in low-power compact circuits that are suitable for large-scale VLSI implementations of Spiking Neural Networks (SNNs) with improved synaptic plasticity and learning capabilities.","PeriodicalId":117453,"journal":{"name":"2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128751286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Brendler, Naser Pour Aryan, V. Rieger, A. Rothermel
{"title":"Resistorless BiCMOS voltage reference with isolated substrate potential for biomedical implants","authors":"C. Brendler, Naser Pour Aryan, V. Rieger, A. Rothermel","doi":"10.1109/ICECS.2013.6815400","DOIUrl":"https://doi.org/10.1109/ICECS.2013.6815400","url":null,"abstract":"This paper shows a resistorless BiCMOS voltage reference with isolated substrate potential for an inductively powered biomedical implant. The reference voltage source has been designed in a 350nm High Voltage BiCMOS process. The reference voltage is used as part of an biomedical implant system to generate the positive supply voltage VDD and the substrate potential VSS used as negative supply. Therefore the reference voltage has to be highly insensitive and independent on substrate variations. The proposed design shows 1.4% accuracy over process variations and mismatch. The line sensitivity was measured to be 4mV/V. Measurements have proven that the isolation of the output of the reference voltage from the substrate potential is working properly. The power supply rejection ratio without any filtering capacitor at 10Hz and 10MHz is lower than -60dB and -35 dB, respectively.","PeriodicalId":117453,"journal":{"name":"2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129489683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}