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Photorefractive Materials, Effects And Devices Prm'93最新文献

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Photorefractive Effect in InP:Fe Under High Electric Field 高电场作用下InP:Fe的光折变效应
Photorefractive Materials, Effects And Devices Prm'93 Pub Date : 1900-01-01 DOI: 10.1364/pmed.1993.frb.1
K. Turki, G. Picoli, N. Wolffer, P. Gravey
{"title":"Photorefractive Effect in InP:Fe Under High Electric Field","authors":"K. Turki, G. Picoli, N. Wolffer, P. Gravey","doi":"10.1364/pmed.1993.frb.1","DOIUrl":"https://doi.org/10.1364/pmed.1993.frb.1","url":null,"abstract":"Fe-doped InP is a promising photorefractive material offering the possibility of implementing optical processing functions at IR wavelengths compatible with semiconductor lasers and optical communication applications.","PeriodicalId":110649,"journal":{"name":"Photorefractive Materials, Effects And Devices Prm'93","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115117612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Linewidth Narrowing in Semiconductor Lasers Due to Self-Pumped Phase-Conjugate Feedback 自抽运相位共轭反馈导致半导体激光器线宽变窄
Photorefractive Materials, Effects And Devices Prm'93 Pub Date : 1900-01-01 DOI: 10.1364/pmed.1993.sab.2
B. Liby, D. Statman, J. McInerney, J. McIver
{"title":"Linewidth Narrowing in Semiconductor Lasers Due to Self-Pumped Phase-Conjugate Feedback","authors":"B. Liby, D. Statman, J. McInerney, J. McIver","doi":"10.1364/pmed.1993.sab.2","DOIUrl":"https://doi.org/10.1364/pmed.1993.sab.2","url":null,"abstract":"The effects of optical feedback on semiconductor lasers have been studied for some time.","PeriodicalId":110649,"journal":{"name":"Photorefractive Materials, Effects And Devices Prm'93","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114640442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Space Charge Transfer and Electric Field Screening in p-i-n Structures p-i-n结构中的空间电荷转移和电场屏蔽
Photorefractive Materials, Effects And Devices Prm'93 Pub Date : 1900-01-01 DOI: 10.1364/pmed.1993.frc.13
A. Ilinskii, A. Kutsenko, M. B. Melnikov
{"title":"Space Charge Transfer and Electric Field Screening in p-i-n Structures","authors":"A. Ilinskii, A. Kutsenko, M. B. Melnikov","doi":"10.1364/pmed.1993.frc.13","DOIUrl":"https://doi.org/10.1364/pmed.1993.frc.13","url":null,"abstract":"I. Introduction. Studying of charge transfer processes and field evolution in GaAs p-i-n structures is of interest because of applications in different electronic devices. It is considered [1] that in reversed based structures after finishing all transient processes the field distribution in bulk of i-layer has maximum strongly shifted to p- or n-layer. the shift direction depends on the impurity prevailing in i- layer; the impurity is considered to be ionized. Very often sucn assumptions are not enough valid. It is connected with complications of the method to obtain experimental information about spacial field distribution in a structure especially made of high-resistivity crystals with low impurity concentra- 15 -3 . tion (<10 cm ). Recent investigations of high - resistivity semiconductor crystals uses electrooptic effect in determination of spacial distribution of the field and its dynamics. They enable to give up the assumptions above and to provide more accurate modeling of charge transfer and field screening processes in GaAs p-i-n structures. In resent work field dynamics was studied in reverse biased bulk p-i-n structures made of lightly doped GaAs. Field evolution in different layers of the structure after voltage application and stationary field distribution were observed at voltage range (U=IO-I4OV). Theo retical modeling of the fenomena was provided taking into account only drift transport of generated free carriers.","PeriodicalId":110649,"journal":{"name":"Photorefractive Materials, Effects And Devices Prm'93","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123570975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tensor and Phase Properties of Second Order Polarizability Gratings in Glasses 玻璃中二阶偏振光栅的张量和相位特性
Photorefractive Materials, Effects And Devices Prm'93 Pub Date : 1900-01-01 DOI: 10.1364/pmed.1993.frh.6
M. Bolshtyansky, V. Churikov, A. Savchenko, B. Y. Zpl’dovich
{"title":"Tensor and Phase Properties of Second Order Polarizability Gratings in Glasses","authors":"M. Bolshtyansky, V. Churikov, A. Savchenko, B. Y. Zpl’dovich","doi":"10.1364/pmed.1993.frh.6","DOIUrl":"https://doi.org/10.1364/pmed.1993.frh.6","url":null,"abstract":"Photoinduced Second Harmonic Generation (PISHG) in optical fibers was widely studied last five years [1].","PeriodicalId":110649,"journal":{"name":"Photorefractive Materials, Effects And Devices Prm'93","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130947653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photorefractive materiais, effects and devices topical meeting Kiev - 1993 : Optical Properties of Doped Sillenites Matching as Unique Multilevel Intrinsic Absorption Center Model 光折变材料、效应和器件专题会议，基辅，1993:作为独特的多能级本征吸收中心模型的掺杂硅硅石光学性质匹配
Photorefractive Materials, Effects And Devices Prm'93 Pub Date : 1900-01-01 DOI: 10.1364/pmed.1993.tha.7
H. Marquet, A. Ennouri, J. Zielinger, M. Tapiero, V. Chévrier, J. Launay
{"title":"Photorefractive materiais, effects and devices topical meeting Kiev - 1993 : Optical Properties of Doped Sillenites Matching as Unique Multilevel Intrinsic Absorption Center Model","authors":"H. Marquet, A. Ennouri, J. Zielinger, M. Tapiero, V. Chévrier, J. Launay","doi":"10.1364/pmed.1993.tha.7","DOIUrl":"https://doi.org/10.1364/pmed.1993.tha.7","url":null,"abstract":"Sillenites have attracted considerable interest because of their photorefractive properties.","PeriodicalId":110649,"journal":{"name":"Photorefractive Materials, Effects And Devices Prm'93","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130493511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photomicrodomain Light Scattering in Lithium Niobate Crystals 铌酸锂晶体的微域光散射
Photorefractive Materials, Effects And Devices Prm'93 Pub Date : 1900-01-01 DOI: 10.1364/pmed.1993.frd.3
V. Lemeshko, V. V. Obuhovsky, A. Stoyanov
{"title":"Photomicrodomain Light Scattering in Lithium Niobate Crystals","authors":"V. Lemeshko, V. V. Obuhovsky, A. Stoyanov","doi":"10.1364/pmed.1993.frd.3","DOIUrl":"https://doi.org/10.1364/pmed.1993.frd.3","url":null,"abstract":"In the present work we report the investigation of a specific kind of photorefractive light scattering (PRLS) – so-called photomicrodomain scattering (PMDS). It appears during optical excitation of a z-cut of lithium niobate crystal and is shown in the form of scattering cone centered around the optical axis of the crystal.","PeriodicalId":110649,"journal":{"name":"Photorefractive Materials, Effects And Devices Prm'93","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127343271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photoinduced Scattering with the Turn of Polarization in LiNbO3 LiNbO3中随极化转变的光致散射
Photorefractive Materials, Effects And Devices Prm'93 Pub Date : 1900-01-01 DOI: 10.1364/pmed.1993.frd.2
I. F. Kanaev, V. Malinovsky, N. Surovtsev
{"title":"Photoinduced Scattering with the Turn of Polarization in LiNbO3","authors":"I. F. Kanaev, V. Malinovsky, N. Surovtsev","doi":"10.1364/pmed.1993.frd.2","DOIUrl":"https://doi.org/10.1364/pmed.1993.frd.2","url":null,"abstract":"Polarizationally-anisotropic light-induced scattering (PAS - scattering with the polarization change) in LiNbO3:Cu (0.1 weight %) and LiNbO3:Fe (0.1 weight %) has been investigated. The data indicate that there is considerable distinction between the time development of the PAS and one of the PIS (polarizationally-isotropic scattering). The more extended time delay of the evolution beginning and the more extended time of the attainment of a steady state (in 5*10 time) are typical for the PAS.","PeriodicalId":110649,"journal":{"name":"Photorefractive Materials, Effects And Devices Prm'93","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126510043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carrier and Electric Field Picosecond Dynamics in Photorefractive GaAs:EL2 and CdTe:V Crystals: Modelisation and DFWM Experiments 光折变GaAs:EL2和CdTe:V晶体中的载流子和电场皮秒动力学:建模和DFWM实验
Photorefractive Materials, Effects And Devices Prm'93 Pub Date : 1900-01-01 DOI: 10.1364/pmed.1993.fra.2
L. Bastien, K. Jarašiūnas, A. Zališčevskis, P. Delaye, G. Roosen
{"title":"Carrier and Electric Field Picosecond Dynamics in Photorefractive GaAs:EL2 and CdTe:V Crystals: Modelisation and DFWM Experiments","authors":"L. Bastien, K. Jarašiūnas, A. Zališčevskis, P. Delaye, G. Roosen","doi":"10.1364/pmed.1993.fra.2","DOIUrl":"https://doi.org/10.1364/pmed.1993.fra.2","url":null,"abstract":"Semünsulating III-V and II-VI semiconductors reveal optical nonlinearities of different origin under excitation by short laser pulses /1,2/.","PeriodicalId":110649,"journal":{"name":"Photorefractive Materials, Effects And Devices Prm'93","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130206245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Frequency response of an optical interferometer using photorefractive crystal 光折变晶体光学干涉仪的频率响应
Photorefractive Materials, Effects And Devices Prm'93 Pub Date : 1900-01-01 DOI: 10.1364/pmed.1993.frg.1
R. Ing, J. Monchalin
{"title":"Frequency response of an optical interferometer using photorefractive crystal","authors":"R. Ing, J. Monchalin","doi":"10.1364/pmed.1993.frg.1","DOIUrl":"https://doi.org/10.1364/pmed.1993.frg.1","url":null,"abstract":"Interferometers using photorefractive crystals are attractive for a number of practical applications by their characteristic of being adaptive to complex wave fronts [1]. Such wave fronts are found in applications such as the detection of the vibration or of the ultrasonic excitation of objects with rough surfaces, which cause light scattering and speckle [2].","PeriodicalId":110649,"journal":{"name":"Photorefractive Materials, Effects And Devices Prm'93","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122380872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radio frequency summation in the phase-locked detection of a running interference pattern 运行干扰图的锁相检测中的射频求和
Photorefractive Materials, Effects And Devices Prm'93 Pub Date : 1900-01-01 DOI: 10.1364/pmed.1993.frg.2
V. S. Bobyr, P. N. Ilinykh, B. Zel'dovich
{"title":"Radio frequency summation in the phase-locked detection of a running interference pattern","authors":"V. S. Bobyr, P. N. Ilinykh, B. Zel'dovich","doi":"10.1364/pmed.1993.frg.2","DOIUrl":"https://doi.org/10.1364/pmed.1993.frg.2","url":null,"abstract":"Phase-locked detection of a running interference pattern has been suggested and realized experimentally in Bi12TiO20, (BTO) [1] and now is studied in details for many materials [2,3]. Phase-locked detection of a running interference pattern has been suggested and realized experimentally in Bi12TiO20, (BTO) [1] and now is studied in details for many materials [2,3].","PeriodicalId":110649,"journal":{"name":"Photorefractive Materials, Effects And Devices Prm'93","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124548002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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