16. Mai最新文献

{"title":"The Effect of Lithium Impurity on Flow Stress in MgO","authors":"V. Orera","doi":"10.1002/PSSA.2210650134","DOIUrl":"https://doi.org/10.1002/PSSA.2210650134","url":null,"abstract":"The presence of Li2O precipitates contributes to the hardening of MgO crystals at room temperature. The enhanced flow stress value is unaffected by thermal treatment, below annealing temperatures of 1100 K. However, above T ≈ 1100 K point defect hardening begins to occur and the room temperature flow stress becomes a strong function of the thermal history of the crystal and the atmosphere in which it is incubated. In an oxidizing atmosphere, the enhancement of the flow stress begins to occur at T ≈ 1100 K and is attended by the appearance of the [Li]° optical absorption band a t 1.8 eV. In an inert or reducing atmosphere, the flow stress increase occurs at T ≈ 1450 K, coinciding with the appearance of an optical band at 5.3 eV. The flow stress depends on the square root of the point defect concentration both, for [Li]° defects and for those responsible of the 5.3 eV band, where the hardening is the same for both defects between experimental error. The 5.3 eV band is assigned to some substitutional configuration of lithium ions. \u0000 \u0000 \u0000 \u0000La presence des precipites de Li2O contribute au durcissement dans les cristaux de MgO a la temperature ambiante. Au dessous de T ≈ 1100 K la valeur accrue de la limite elastique ne change pas avec le traitement thermique. Cependant, au dessus de T ≈ 1100 K commence le durcissement pour les defauts ponctuels et la limite elastique a temperature ambiante devient fortement dependante de l'histoire termique des cristaux et de l'atmosphere de recuit. Dans une atmosphere oxidante, l'acroissement de la limite elastique commence a T ≈ 1100 K et est relie a l'apparition de la bande d'absorption optique du [Li]° a 1,8 eV. Dans une atmosphere inerte ou reductrice, l'accroissement de la limite elastique commence a T ≈ 1450 K coincidant avee l'apparition d'une bande d'absorption optique a 5,3 eV. La limite elastique croit lineairement avec la racine carree du nombre de centres [Li]° et de ceux qui produisent la bande a 5,3 eV, le durcissement est pareil pour tous les deux defauts, dans les limite d'erreur experimentale. Nous assignons la bande a 5,3 eV a une configuration substitutionelle des ions de lithium.","PeriodicalId":109933,"journal":{"name":"16. Mai","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125390897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Electrical and Structural Properties of Thin Films of Polymers Deposited from the Vapour Phase, with Special Reference to Polypropylene","authors":"C. Hogarth, T. Iqbal","doi":"10.1002/PSSA.2210650102","DOIUrl":"https://doi.org/10.1002/PSSA.2210650102","url":null,"abstract":"","PeriodicalId":109933,"journal":{"name":"16. Mai","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127800333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Minority-Carrier Diffusion Length in Zn3P2","authors":"K. Nauka, J. Misiewicz","doi":"10.1002/PSSA.2210650168","DOIUrl":"https://doi.org/10.1002/PSSA.2210650168","url":null,"abstract":"","PeriodicalId":109933,"journal":{"name":"16. Mai","volume":"6 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125926509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Eigenschaften der Energieniveaus von Versetzungen in Silizium","authors":"H. Lemke","doi":"10.1002/PSSA.2210650145","DOIUrl":"https://doi.org/10.1002/PSSA.2210650145","url":null,"abstract":"Mit den Methoden DLTS und TSCa werden die Energieniveaus und Einfangkoeffizienten bei plastisch verformten Si-Kristallen mit Versetzungsdichten von 106 bis 107 cm−2 bestimmt. Bei n- und p-Silizium werden keine Donatorterme sondern eine breite Bande von Akzeptorniveaus unterhalb von Ev + 0,50 eV beobachtet. Moglicherweise wird diese Bande durch Versetzungen mit unterschiedlichen Kernstrukturen verursacht. Bei einer elektrostatischen Energie von 0,15 eV (f ≈ 0,1) fulgt fur die hoheren Niveaus etwa Ev + 0,23 eV und Ev + 0,37 eV, wahrend der tiefste Term unterhalb von Ev + 0,20 eV liegen mus. Die Einfangkoeffizienten der Akzeptoren liegen bei r ≈ 10−9 cm3 s−1 und r ≈ 10−8 cm3 s−1 (T= 90 K). Zusatzlich wird bei einigen n-Kristallen ein Akzeptorniveau bei Ec - 0,39 eV mit r ≈ 10−11 cm3 s−1 beobachtet. In allen Fallen wird die Einfangrate der Elektronen im Gegensatz, zur Einfangrate der Locher wesentlich durch die Hohe der Potentialbarriere beeinflust. Die Ergebnisse der Lebensdauermessungen unterhalb von T = = 300 K konnen fur n- und p-Kristalle rnit unterschiedlichen Werten des Besetzungsfaktors f fur das Niveau Ev + 0,37 eV erklart werden. \u0000 \u0000 \u0000 \u0000The energy levels and capture constants for plastically deformed silicon crystals with dislocation densities 106 to 107 cm−2 are been measured by DLTS- and TSCa-techniques. For n- and p-type silicon a broad band of acceptor levels below Ev + 0.50 eV and no donor levels are observed. Possibly this band is caused by dislocations with different core structures. For an interaction energy of 0.15 eV (f ≈ 0.1) the lowest level must lie below Ev + 0.20 eV and the higher levels at Ev + 0.23 eV and Ev + 0.37 eV. These acceptors have capture constants of about r ≈ 10−9 cm3 s−1 and r ≈ 10−8 cm3 s−1 (T = 90 K). Besides this in some n-type crystals an acceptor level at Ec - 0.39 eV with r ≈ 10−11 cm3 s−1 is found. In all cases the capture rate of electrons contmry to the hole capture is strongly influenced by the height of the potential barrier. The data of lifetime measurements below T = 300 K can be explained with different values of the fill factor f of the level at Ev + 0.37 eV for n- and p-type crystals.","PeriodicalId":109933,"journal":{"name":"16. Mai","volume":"154 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134057241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Transport Properties of Lithium and Sodium Doped Nickel Oxide","authors":"M. B. Dutt, R. Banerjee, A. K. Barua","doi":"10.1002/PSSA.2210650142","DOIUrl":"https://doi.org/10.1002/PSSA.2210650142","url":null,"abstract":"The electrical resistivity and thermoelectric power of ceramic samples of NiO doped with Li and Na are studied as function of temperature and dopant concentration. The resistivity α is measured in the temperature range 100 to 700 K and thermoelectric power in the range 100 to 300 K. The results obtained indicate band conduction as the mechanism for transport in NiO. The resistivity and thermoelectric power of Na doped NiO are found to be higher than the corresponding Li doped samples. This result is explained as due to the increased strain in the lattice by the introduction of Na which has a significantly higher ionic radius than nickel. Der spezifische Widerstand und die Thermospannung von Keramikproben von mit Li und Na dotiertem NiO werden in Abhngigkeit von der Temperatur und Dotierungskonzentration untersucht. Der Widerstand ∂ wird im Temperaturbereich 100 bis 700 K und die Thermospannung α im Bereich 100 bis 300 K gemessen. Die erhaltenen Ergebnisse zeigen, daβ der Transportmechanismus in NiO Bandleitung ist. Der Widerstand und die Thermospannung von Na dotiertem NiO ist hoher als in entsprechenden Li-dotierten Proben. Dieses Ergebnis wird mit der erhohten Spannung im Gitter durch die Einfuhrung von Na erklrt, das einen betrchtlich hoheren Ionenradius als Nickel hat.","PeriodicalId":109933,"journal":{"name":"16. Mai","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132787859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulated X-Ray Contrast of Striations for Plane Waves in the Laue Case","authors":"B. Jenichen, R. Köhler","doi":"10.1002/PSSA.2210650128","DOIUrl":"https://doi.org/10.1002/PSSA.2210650128","url":null,"abstract":"","PeriodicalId":109933,"journal":{"name":"16. Mai","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127407604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Scattering Coefficient and Velocity of Propagation of Electromagnetic Waves in Dielectric Polycrystals","authors":"O. A. Grigorev, T. D. Shermergor","doi":"10.1002/PSSA.2210650114","DOIUrl":"https://doi.org/10.1002/PSSA.2210650114","url":null,"abstract":"","PeriodicalId":109933,"journal":{"name":"16. Mai","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114022542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetization of Iron Hydride","authors":"V. Antonov, I. T. Belash, E. G. Ponyatovskiĭ, V. Thiessen, V. Shiryaev","doi":"10.1002/PSSA.2210650156","DOIUrl":"https://doi.org/10.1002/PSSA.2210650156","url":null,"abstract":"","PeriodicalId":109933,"journal":{"name":"16. Mai","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132180877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electron Microscopic Observation of Periodic Antiphase Domain Structures in the a2-Phase of Cu-Al Alloys","authors":"N. Kuwano, H. Mishio, M. Toki, T. Eguchi","doi":"10.1002/PSSA.2210650140","DOIUrl":"https://doi.org/10.1002/PSSA.2210650140","url":null,"abstract":"The configuration of antiphase domains in α2CuAl which has a one-dimensional long period superstructure is investigated using electron microscopy. From lattice images it is confirmed that the structure which has a non-integral antiphase period is made of two kinds of domains, each with an integral period, when the period is measured in the unit of the dimension of the basic ordered cell, L12. The fractional number of the period is regarded as an average of integral periods of the domains over the crystal. The mixing mode of the domains in the structure with an average period of a non-integer is found to be characterized as “irregular arrangement of uniform mixing” in the term of classification proposed by Fujiwara. Particularly, when the average period is nearly a half integer, the domains of different periods are mixed quite regularly. A singular configuration of antiphase domains which is ascribed to jogging of antiphase boundaries is observed: of the two kinds of domains which the antiphase structure is made of, minority domains join together in a group of a definite number, and thereby merge in the matrix. \u0000 \u0000 \u0000 \u0000Die Konfiguration der Antiphasendomanen in α2CuAl Legierungen, die ein-dimensionale lang- periodische Ordnung haben, wird mit Elektronenmikroskopie untersucht. Aus den Gitterabbildungen wird gefolgert, das die Antiphasendomanenstruktur, die eine nicht ganzzahlige Periode in Einheiten der L12-Gitterlangen hat, aus zwei Arten Domanen jede mit einer ganzzahligen Periode zusammengesetzt. Die nichtganzzahlige Periode kann als Mittel der ganzzahligen Perioden im Kristall aufgefast werden. Es wird gefunden, das die Mischungsmode der Antiphasendomanen in der Struktur mit einer nicht ganzzahligen mittleren Periode als „unregelmasige Verteilung einheitlicher Mischung” in der Klassifikation von Fujiwara charakterisiert werden kann. Wenn die durchschnittliche Periode etwa halbzahlig ist, sind die Domanen mit verschiedenen Perioden besonders regelmasig vermischt. Eine besondere Konfiguration der Antiphasendomanen, die auf Jogs der Antiphasengrenzen zuruckgefuhrt ist, wird beobachtet: von den zwei Arten Domanen, aus denen die Antiphasenstruktur zusammengesetzt ist, sammeln sich die Minoritats- domanen in einer Gruppe rnit einer bestimmten Anzahl auf dem Hintergrunde der Majoritatsdomanen.","PeriodicalId":109933,"journal":{"name":"16. Mai","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130599040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetic Ordering in Pb(Fe0.5Nb0.5)O3 at 4.2 K","authors":"J. Pietrzak, A. Maryanowska, J. Leciejewicz","doi":"10.1002/PSSA.2210650164","DOIUrl":"https://doi.org/10.1002/PSSA.2210650164","url":null,"abstract":"","PeriodicalId":109933,"journal":{"name":"16. Mai","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130567975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}