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1986 IEEE MTT-S International Microwave Symposium Digest最新文献

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A Millimetre-Wave Self-Oscillating Mixer Using a GaAs FET Harmonic-Mode Oscillator 利用砷化镓场效应管谐波模振荡器的毫米波自振荡混频器
1986 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1986-09-01 DOI: 10.1109/MWSYM.1986.1132257
D. Evans
{"title":"A Millimetre-Wave Self-Oscillating Mixer Using a GaAs FET Harmonic-Mode Oscillator","authors":"D. Evans","doi":"10.1109/MWSYM.1986.1132257","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132257","url":null,"abstract":"A 34 GHz self-oscillating mixer is described. The harmonic-mode oscillator which is constructed in microstrip produces 4 mW and as a mixer has minimum detectable signal sensitivity of -121.6dBm/ Hz at a Doppler frequency of 4 kHz. It is potentially a low cost sensor for motion and proximity detection.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122556382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Inter-Injection-Locked Oscillators with Applications to Spatial Power Combining and Phased Arrays 注入间锁振及其在空间功率组合和相控阵中的应用
1986 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1986-06-02 DOI: 10.1109/MWSYM.1986.1132137
K. Stephan
{"title":"Inter-Injection-Locked Oscillators with Applications to Spatial Power Combining and Phased Arrays","authors":"K. Stephan","doi":"10.1109/MWSYM.1986.1132137","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132137","url":null,"abstract":"Although the principle of injection locking has been applied to single- and multiple-device oscillators at microwave through millimeter wavelengths, the technique has not found many uses in hybrid or monolithic microwave integrated circuits. We present here a novel circuit topology which leads to the inter-injection-locking of a set of interconnected oscillators. Since each oscillator is coupled only to its two nearest neighbors, the scheme is very well adapted to integrated planar construction. Furthermore, phase control of only one injection power source can control the phases of all oscillators in the system in a manner suitable for driving a phased antenna array. A summary of the theory is followed by a description of results from an experimental VHF three-oscillator system. We conclude with a discussion of some proposed applications of inter-injection-locked systems.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115142715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Millimeter-Wave Imaging Sensor 毫米波成像传感器
1986 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1986-06-02 DOI: 10.1117/12.936771
W. Wilson, R. Howard, A. Ibbott, G. S. Parks, W. Ricketts
{"title":"Millimeter-Wave Imaging Sensor","authors":"W. Wilson, R. Howard, A. Ibbott, G. S. Parks, W. Ricketts","doi":"10.1117/12.936771","DOIUrl":"https://doi.org/10.1117/12.936771","url":null,"abstract":"A scanning 3-mm radiometer system has been built and used on a helicopter to produce moderate resolution (0.5°) images of the ground. This mm-wave sensor can be used for a variety of remote sensing applications, and produces images through clouds, smoke, and dust when visual and IR sensors are not usable. The system is described, and imaging results are presented.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116866949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 40
Frequency/Temperature Compensated Millimeter-Wave Oscillators and Broadband VCO's in Lumped-Element and Printed-Circuit Forms 频率/温度补偿毫米波振荡器和集总元件和印刷电路形式的宽带压控振荡器
1986 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1986-06-02 DOI: 10.1109/MWSYM.1986.1132140
L. Cohen, N. King
{"title":"Frequency/Temperature Compensated Millimeter-Wave Oscillators and Broadband VCO's in Lumped-Element and Printed-Circuit Forms","authors":"L. Cohen, N. King","doi":"10.1109/MWSYM.1986.1132140","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132140","url":null,"abstract":"Frequency/temperature compensation of millimeter-wave, lumped-element, Gunn oscillators and broadband VCO's by use of a simple capacitive compensating element has been demonstrated with performance that includes +-1.5 ppm/°C frequency stability at 30 GHz over a temperature range of -40° to +71°C. A printed-circuit oscillator, in which the temperature compensating capacitor is printed in situ with the circuit elements, will also be described.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124992987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Coherent RF Error Statistics 相干射频误差统计
1986 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1986-06-02 DOI: 10.1109/MWSYM.1986.1132279
R. Dybdal, R. Ott
{"title":"Coherent RF Error Statistics","authors":"R. Dybdal, R. Ott","doi":"10.1109/MWSYM.1986.1132279","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132279","url":null,"abstract":"RF error statistics for power, voltage, and phase are presented for an error component which is coherently related to a desired signal. The error component is assumed to have a constant magnitude and a phase distribution which is equally likely and uniformly distributed from 0 to 360°. The statistics which result have non-zero mean values for power and voltage errors and the standard deviation of the errors differ significantly from those projected from Gaussian statistics.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123466982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A High Performance 2-18.5 GHz Distributed Amplifier, Theory and Experiment 高性能2-18.5 GHz分布式放大器，理论与实验
1986 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1986-06-02 DOI: 10.1109/MWSYM.1986.1132318
T. Mckay, R. Williams
{"title":"A High Performance 2-18.5 GHz Distributed Amplifier, Theory and Experiment","authors":"T. Mckay, R. Williams","doi":"10.1109/MWSYM.1986.1132318","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132318","url":null,"abstract":"A high performance 2-18.5 GHz monolithic GaAs MES-FET distributed amplifier has been designed and fabricated. The m-derived drain line design is analyzed theoretically and a closed form gain equation is presented. Theoretical predictions are compared to measured results and more complicated CAD models. The measured small signal gain is typically 8.0 +- 0.25dB from 2-18.5 GHz at standard bias. Typical input return loss is greater than 12dB and the output return loss is greater than 15dB. The saturated output power is in excess of 23dBm over most of the band and the noise figure is less than 7.5dB.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125560205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Modeling of the Apparent Characteristic Impedance Finned-Waveguide and Finlines 翅片波导和鳍线的视特性阻抗建模
1986 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1986-06-02 DOI: 10.1109/MWSYM.1986.1132155
P. Pramanick, P. Bhartia
{"title":"Modeling of the Apparent Characteristic Impedance Finned-Waveguide and Finlines","authors":"P. Pramanick, P. Bhartia","doi":"10.1109/MWSYM.1986.1132155","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132155","url":null,"abstract":"This paper models the apparent characteristic impedance of finned-waveguide and finline from the standpoint of per unit length capacitance obtained from conformal-mapping and the cutoff wavelength, without going into the controversy of definition. The model strongly supports the power/voltage definition. Closed-form synthesis equations have also been derived.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115254648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Coplanar Waveguides Used in 2-18 GHz Distributed Amplifier 用于2- 18ghz分布式放大器的共面波导
1986 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1986-06-02 DOI: 10.1109/MWSYM.1986.1132185
M. Riaziat, I. Zubeck, S. Bandy, G. Zdasiuk
{"title":"Coplanar Waveguides Used in 2-18 GHz Distributed Amplifier","authors":"M. Riaziat, I. Zubeck, S. Bandy, G. Zdasiuk","doi":"10.1109/MWSYM.1986.1132185","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132185","url":null,"abstract":"This paper describes the use of coplanar waveguide as an alternative transmission medium in a monolithic distributed amplifier. The coplanar waveguide layout substantially reduces coupling effects between adjacent lines, and eliminates the need for via holes and substrate thinning, leading to higher fabrication yields. The resulting device reported here is a compact (1.3 x 1.5mm) low noise distributed amplifier on a thick GaAs substrate (15 mil), with a gain of 6.0 +- 0.5dB over the frequency range of 2 - 18GHz.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122309583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 49
High Efficiency One, Two, and Four Watt Class B FET Power Amplifiers 高效率的一、二、四瓦B类场效应晶体管功率放大器
1986 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1986-06-02 DOI: 10.1109/MWSYM.1986.1132218
J. R. Lane, R. Freitag, J. Degenford, M. Cohn
{"title":"High Efficiency One, Two, and Four Watt Class B FET Power Amplifiers","authors":"J. R. Lane, R. Freitag, J. Degenford, M. Cohn","doi":"10.1109/MWSYM.1986.1132218","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132218","url":null,"abstract":"A family of X-band amplifier utilizing the higher efficiency of class B operation has been designed and fabricated. This paper describes the circuitry and performance of 1 watt single-ended, 2 watt push-pull, and 4 watt dual push-pull amplifiers having typical power-added efficiencies of 45%, 40%, and 35%, respectively, in a 1 GHz bandwidth, with associated gains of 5.8 dB, 5.4 dB, and 5.0 dB . Additional data is given for fifteen each of the 1 watt and 2 watt units to show the consistency of their performance.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122366341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Slow-Wave Characteristics of Ferromagnetic Semiconductor Microstrip Line 铁磁半导体微带线的慢波特性
1986 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1986-06-02 DOI: 10.1109/MWSYM.1986.1132110
H. Ogawa, T. Itoh
{"title":"Slow-Wave Characteristics of Ferromagnetic Semiconductor Microstrip Line","authors":"H. Ogawa, T. Itoh","doi":"10.1109/MWSYM.1986.1132110","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132110","url":null,"abstract":"A new slow-wave microstrip line made of a ferromagnetic semiconductor (FMS) substrate is proposed and its characteristics discussed. It is shown that this structure has more desirable and flexible guided wave properties than the conventional metal-insulator-semiconductor (MIS) microstrip line.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122541233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 32
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