发布求助
文献互助 智能选刊 最新文献

Crystal Research and Technology最新文献

筛选
英文 中文
Self‐Assembly Method for Insensitive DAAF/FOX‐7 Composite Crystals with Microspheres Structure 微球结构不敏感DAAF/FOX - 7复合晶体的自组装方法
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-02-08 DOI: 10.1002/crat.202000194
Shujie Liu, Bidong Wu, Jia-ni Xie, Zhimin Li, Chongwei An, Jingyu Wang, Xiaodong Li
{"title":"Self‐Assembly Method for Insensitive DAAF/FOX‐7 Composite Crystals with Microspheres Structure","authors":"Shujie Liu, Bidong Wu, Jia-ni Xie, Zhimin Li, Chongwei An, Jingyu Wang, Xiaodong Li","doi":"10.1002/crat.202000194","DOIUrl":"https://doi.org/10.1002/crat.202000194","url":null,"abstract":"Highly efficient design for the formulation of explosives is desired for accelerating the development of energetic materials. These investigations are focused on the preparation of the compounds 3,3′‐diamino‐4,4′‐azoxyfurazan (DAAF) and 1,1‐diamino‐2,2‐dinitroethylene (FOX‐7). DAAF/FOX‐7 microspheres are prepared via the self‐assembly method using different mass ratios of DAAF and FOX‐7. Materials Studio is used to analyze the intermolecular binding energy (Ebind) of the composite system. DAAF/FOX‐7 with a mass ratio of 90:10 shows a higher Ebind (183.24 kJ mol−1) and peak temperature at the heating rate of 0 °C min−1 (266.2 °C) than DAAF/FOX‐7 with a mass ratio of 70:30 and DAAF/FOX‐7 with a mass ratio of 80:20; this indicates that DAAF/FOX‐7 (90:10) shows better thermal stability. EXPLO5 is used to analyze the detonation velocity of the composite system, and the detonation velocity of DAAF/FOX‐7 microspheres increase by 0.5 km s−1 compared to that of DAAF. The characteristic drop height of impact sensitivity is more than 100 cm, and this demonstrates that the microspheres exhibit good safety performance. The morphology, crystal structure, thermal decomposition property, and impact sensitivity of the microspheres are investigated and compared. X‐ray diffraction and Fourier transform infrared spectroscopy results indicate that the structure of the DAAF/FOX‐7 composite is not changed compared to that of the raw material.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"7 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82204499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Gallium(III) Oxide: Formation of High‐Quality Heteroepitaxial β‐Ga 2 O 3 Films by Crystal Phase Transition (Crystal Research and Technology 2/2021) 氧化镓(III):通过晶体相变形成高质量异质外延β - ga2o3薄膜(晶体研究与技术2/2021)
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-02-01 DOI: 10.1002/crat.202170012
{"title":"Gallium(III) Oxide: Formation of High‐Quality Heteroepitaxial β‐Ga\u0000 2\u0000 O\u0000 3\u0000 Films by Crystal Phase Transition (Crystal Research and Technology 2/2021)","authors":"","doi":"10.1002/crat.202170012","DOIUrl":"https://doi.org/10.1002/crat.202170012","url":null,"abstract":"","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"12 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73091169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Masthead: Crystal Research and Technology 2'2021 报头:晶体研究与技术2'2021
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-02-01 DOI: 10.1002/crat.202170013
{"title":"Masthead: Crystal Research and Technology 2'2021","authors":"","doi":"10.1002/crat.202170013","DOIUrl":"https://doi.org/10.1002/crat.202170013","url":null,"abstract":"","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"15 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80345279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chemical Synthesis and Substrate Temperature Effect on Morphology of 2D Vanadium Disulfide 化学合成及衬底温度对二维二硫化钒形貌的影响
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-01-27 DOI: 10.1002/crat.202000184
Mongur Hossain, B. Qin, S. Sen
{"title":"Chemical Synthesis and Substrate Temperature Effect on Morphology of 2D Vanadium Disulfide","authors":"Mongur Hossain, B. Qin, S. Sen","doi":"10.1002/crat.202000184","DOIUrl":"https://doi.org/10.1002/crat.202000184","url":null,"abstract":"2D metallic transition metal dichalcogenides exhibit plenty of intriguing physical properties such as magnetism, charge density wave, and superconductivity resulting in worldwide attention from condensed‐matter physicists over the last few decades. Herein, the chemical synthesis and substrate temperature effect on the morphology of 2D vanadium disulfide (VS2) are reported. The synthesis is done by atmospheric pressure chemical vapor deposition using vanadium chloride (VCl3) precursor on SiO2/Si, fluorphlogopite mica, and hexagonal boron nitride (h‐BN) substrates. The effect of substrate temperatures on the morphology of 2D VS2 nanosheets growth is investigated by optical microscopy, scanning electron microscopy, and atomic force microscopy. Large area VS2 films are attained when the substrate temperature is 650 °C whereas VS2 single crystals are obtained at 550 °C.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"32 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75783798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
How to Manage a Crystallization Process Aimed at Obtaining a Desired Combination of Number of Crystals and Their Distribution by Size: Learn Here
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-01-18 DOI: 10.1002/crat.202000190
C. Nanev
{"title":"How to Manage a Crystallization Process Aimed at Obtaining a Desired Combination of Number of Crystals and Their Distribution by Size: Learn Here","authors":"C. Nanev","doi":"10.1002/crat.202000190","DOIUrl":"https://doi.org/10.1002/crat.202000190","url":null,"abstract":"Managing a crystallization process adequately, it is possible to obtain a crystalline product having the desired crystal size distribution. Recommendations for selecting crystallization parameters that are needed to achieve this goal are given basing of a theoretical analysis in which special attention is paid to the growth of crystals from solutions with a preset concentration. Mathematical equations which enable calculation of the theoretical yield for the crystallization process have been elaborated. New formula giving the crystal nuclei number per unit volume as a function of both supersaturation and nucleation time has been devised based on the logistic kinetics of crystal nucleation proceeding under constant supersaturation. The quantitative relation between number density and mean size of crystals growing in batch crystallization is calculated. The calculation shows that the mean size of crystals reached at any time of their growth is inversely proportional to root third of the crystal number density.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"100 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76995163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Supramolecular Self‐Assembly of Cyclopentyl‐Substituted Cucurbit[n]uril with Fe3+, Fe2+, and HClO4 Based on Outer Surface Interaction 基于外表面相互作用的环戊基取代葫芦[n] il与Fe3+， Fe2+和HClO4的超分子自组装
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-01-18 DOI: 10.1002/crat.202000183
Jun Zheng, W. Zhao, Ye Meng, Y. Jin, Jie Gao, P. Ma
{"title":"Supramolecular Self‐Assembly of Cyclopentyl‐Substituted Cucurbit[n]uril with Fe3+, Fe2+, and HClO4 Based on Outer Surface Interaction","authors":"Jun Zheng, W. Zhao, Ye Meng, Y. Jin, Jie Gao, P. Ma","doi":"10.1002/crat.202000183","DOIUrl":"https://doi.org/10.1002/crat.202000183","url":null,"abstract":"The supramolecular self‐assembly of the outer surface of cucurbit[n]uril is one of the main areas of focus in cucurbit[n]uril chemistry. The crystal structure is determined by single‐crystal X‐ray diffraction and characterized. This work focuses on the supramolecular self‐assembly between CyP5Q[5], FeCl2, FeCl3 and CyP6Q[6] and HClO4 through the interaction of the outer surface.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"44 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73368215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Numerical Study of the Upgraded Hot Zone in Silicon Directional Solidification Process 硅定向凝固过程中升级热区的数值研究
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-01-06 DOI: 10.1002/crat.202000180
Wenjia Su, Wei Yang, Jiulong Li, Xiaoming Han, Junfeng Wang
{"title":"Numerical Study of the Upgraded Hot Zone in Silicon Directional Solidification Process","authors":"Wenjia Su, Wei Yang, Jiulong Li, Xiaoming Han, Junfeng Wang","doi":"10.1002/crat.202000180","DOIUrl":"https://doi.org/10.1002/crat.202000180","url":null,"abstract":"2D global transient model for generation‐six (G6) GT‐style furnace and upgraded generation‐seven (G7) ALD‐style furnace in which all types of heat transfer and flow are included is established to investigate the thermal field, melt convection, melt–crystal (m–c) interface shape, thermal stress, growth rate, and Voronkov ratios in the growing silicon ingot. The modeling is verified by the heater power and temperature experiment. Simulation results show that the melt flow is relatively stronger as the furnace upgrades. For G7, a relatively higher thermal stress and growth rate are found due to the higher temperature gradient both in the horizontal and axial directions. Furthermore, unlike the optimized G6, G7 shows the overly convex m–c interface in the initial stage and edge nucleation throughout crystal growth stage.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"57 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81446928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
55 Years of Crystal Research & Technology 55年的晶体研究与技术
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-01-01 DOI: 10.1002/CRAT.202000233
W. Neumann, K. Benz, M. Zastrow
{"title":"55 Years of Crystal Research & Technology","authors":"W. Neumann, K. Benz, M. Zastrow","doi":"10.1002/CRAT.202000233","DOIUrl":"https://doi.org/10.1002/CRAT.202000233","url":null,"abstract":"","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"110 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75991509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
(Crystal Research and Technology 1/2021) (晶体研究与技术1/2021)
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-01-01 DOI: 10.1002/crat.202170010
{"title":"(Crystal Research and Technology 1/2021)","authors":"","doi":"10.1002/crat.202170010","DOIUrl":"https://doi.org/10.1002/crat.202170010","url":null,"abstract":"","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"64 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79055534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Masthead: Crystal Research and Technology 1'2021 报头:晶体研究与技术1'2021
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-01-01 DOI: 10.1002/crat.202170011
{"title":"Masthead: Crystal Research and Technology 1'2021","authors":"","doi":"10.1002/crat.202170011","DOIUrl":"https://doi.org/10.1002/crat.202170011","url":null,"abstract":"","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"3 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75303073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信