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Gallium(III) Oxide: Formation of High‐Quality Heteroepitaxial β‐Ga 2 O 3 Films by Crystal Phase Transition (Crystal Research and Technology 2/2021) 氧化镓(III):通过晶体相变形成高质量异质外延β - ga2o3薄膜(晶体研究与技术2/2021)
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-02-01 DOI: 10.1002/crat.202170012
{"title":"Gallium(III) Oxide: Formation of High‐Quality Heteroepitaxial β‐Ga\u0000 2\u0000 O\u0000 3\u0000 Films by Crystal Phase Transition (Crystal Research and Technology 2/2021)","authors":"","doi":"10.1002/crat.202170012","DOIUrl":"https://doi.org/10.1002/crat.202170012","url":null,"abstract":"","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"12 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73091169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Masthead: Crystal Research and Technology 2'2021 报头:晶体研究与技术2'2021
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-02-01 DOI: 10.1002/crat.202170013
{"title":"Masthead: Crystal Research and Technology 2'2021","authors":"","doi":"10.1002/crat.202170013","DOIUrl":"https://doi.org/10.1002/crat.202170013","url":null,"abstract":"","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"15 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80345279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chemical Synthesis and Substrate Temperature Effect on Morphology of 2D Vanadium Disulfide 化学合成及衬底温度对二维二硫化钒形貌的影响
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-01-27 DOI: 10.1002/crat.202000184
Mongur Hossain, B. Qin, S. Sen
{"title":"Chemical Synthesis and Substrate Temperature Effect on Morphology of 2D Vanadium Disulfide","authors":"Mongur Hossain, B. Qin, S. Sen","doi":"10.1002/crat.202000184","DOIUrl":"https://doi.org/10.1002/crat.202000184","url":null,"abstract":"2D metallic transition metal dichalcogenides exhibit plenty of intriguing physical properties such as magnetism, charge density wave, and superconductivity resulting in worldwide attention from condensed‐matter physicists over the last few decades. Herein, the chemical synthesis and substrate temperature effect on the morphology of 2D vanadium disulfide (VS2) are reported. The synthesis is done by atmospheric pressure chemical vapor deposition using vanadium chloride (VCl3) precursor on SiO2/Si, fluorphlogopite mica, and hexagonal boron nitride (h‐BN) substrates. The effect of substrate temperatures on the morphology of 2D VS2 nanosheets growth is investigated by optical microscopy, scanning electron microscopy, and atomic force microscopy. Large area VS2 films are attained when the substrate temperature is 650 °C whereas VS2 single crystals are obtained at 550 °C.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"32 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75783798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
How to Manage a Crystallization Process Aimed at Obtaining a Desired Combination of Number of Crystals and Their Distribution by Size: Learn Here
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-01-18 DOI: 10.1002/crat.202000190
C. Nanev
{"title":"How to Manage a Crystallization Process Aimed at Obtaining a Desired Combination of Number of Crystals and Their Distribution by Size: Learn Here","authors":"C. Nanev","doi":"10.1002/crat.202000190","DOIUrl":"https://doi.org/10.1002/crat.202000190","url":null,"abstract":"Managing a crystallization process adequately, it is possible to obtain a crystalline product having the desired crystal size distribution. Recommendations for selecting crystallization parameters that are needed to achieve this goal are given basing of a theoretical analysis in which special attention is paid to the growth of crystals from solutions with a preset concentration. Mathematical equations which enable calculation of the theoretical yield for the crystallization process have been elaborated. New formula giving the crystal nuclei number per unit volume as a function of both supersaturation and nucleation time has been devised based on the logistic kinetics of crystal nucleation proceeding under constant supersaturation. The quantitative relation between number density and mean size of crystals growing in batch crystallization is calculated. The calculation shows that the mean size of crystals reached at any time of their growth is inversely proportional to root third of the crystal number density.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"100 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76995163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Supramolecular Self‐Assembly of Cyclopentyl‐Substituted Cucurbit[n]uril with Fe3+, Fe2+, and HClO4 Based on Outer Surface Interaction 基于外表面相互作用的环戊基取代葫芦[n] il与Fe3+， Fe2+和HClO4的超分子自组装
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-01-18 DOI: 10.1002/crat.202000183
Jun Zheng, W. Zhao, Ye Meng, Y. Jin, Jie Gao, P. Ma
{"title":"Supramolecular Self‐Assembly of Cyclopentyl‐Substituted Cucurbit[n]uril with Fe3+, Fe2+, and HClO4 Based on Outer Surface Interaction","authors":"Jun Zheng, W. Zhao, Ye Meng, Y. Jin, Jie Gao, P. Ma","doi":"10.1002/crat.202000183","DOIUrl":"https://doi.org/10.1002/crat.202000183","url":null,"abstract":"The supramolecular self‐assembly of the outer surface of cucurbit[n]uril is one of the main areas of focus in cucurbit[n]uril chemistry. The crystal structure is determined by single‐crystal X‐ray diffraction and characterized. This work focuses on the supramolecular self‐assembly between CyP5Q[5], FeCl2, FeCl3 and CyP6Q[6] and HClO4 through the interaction of the outer surface.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"44 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73368215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Numerical Study of the Upgraded Hot Zone in Silicon Directional Solidification Process 硅定向凝固过程中升级热区的数值研究
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-01-06 DOI: 10.1002/crat.202000180
Wenjia Su, Wei Yang, Jiulong Li, Xiaoming Han, Junfeng Wang
{"title":"Numerical Study of the Upgraded Hot Zone in Silicon Directional Solidification Process","authors":"Wenjia Su, Wei Yang, Jiulong Li, Xiaoming Han, Junfeng Wang","doi":"10.1002/crat.202000180","DOIUrl":"https://doi.org/10.1002/crat.202000180","url":null,"abstract":"2D global transient model for generation‐six (G6) GT‐style furnace and upgraded generation‐seven (G7) ALD‐style furnace in which all types of heat transfer and flow are included is established to investigate the thermal field, melt convection, melt–crystal (m–c) interface shape, thermal stress, growth rate, and Voronkov ratios in the growing silicon ingot. The modeling is verified by the heater power and temperature experiment. Simulation results show that the melt flow is relatively stronger as the furnace upgrades. For G7, a relatively higher thermal stress and growth rate are found due to the higher temperature gradient both in the horizontal and axial directions. Furthermore, unlike the optimized G6, G7 shows the overly convex m–c interface in the initial stage and edge nucleation throughout crystal growth stage.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"57 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81446928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
55 Years of Crystal Research & Technology 55年的晶体研究与技术
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-01-01 DOI: 10.1002/CRAT.202000233
W. Neumann, K. Benz, M. Zastrow
{"title":"55 Years of Crystal Research & Technology","authors":"W. Neumann, K. Benz, M. Zastrow","doi":"10.1002/CRAT.202000233","DOIUrl":"https://doi.org/10.1002/CRAT.202000233","url":null,"abstract":"","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"110 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75991509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
(Crystal Research and Technology 1/2021) (晶体研究与技术1/2021)
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-01-01 DOI: 10.1002/crat.202170010
{"title":"(Crystal Research and Technology 1/2021)","authors":"","doi":"10.1002/crat.202170010","DOIUrl":"https://doi.org/10.1002/crat.202170010","url":null,"abstract":"","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"64 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79055534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Masthead: Crystal Research and Technology 1'2021 报头:晶体研究与技术1'2021
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2021-01-01 DOI: 10.1002/crat.202170011
{"title":"Masthead: Crystal Research and Technology 1'2021","authors":"","doi":"10.1002/crat.202170011","DOIUrl":"https://doi.org/10.1002/crat.202170011","url":null,"abstract":"","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"3 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75303073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Linear‐Nonlinear Optical and Quantum Chemical Studies on Quinolinium 4‐Aminobenzoate: A Third Order Non‐Linear Optical Material for Optoelectronic Applications 4 -氨基苯甲酸喹啉盐:一种用于光电应用的三阶非线性光学材料的线性-非线性光学和量子化学研究
IF 1.5 4区 材料科学
Crystal Research and Technology Pub Date : 2020-12-30 DOI: 10.1002/crat.202000076
Sarath Ravi, Rakhi Sreedharan, K. R. Raghi, T. K. M. Kumar, K. Naseema
{"title":"Linear‐Nonlinear Optical and Quantum Chemical Studies on Quinolinium 4‐Aminobenzoate: A Third Order Non‐Linear Optical Material for Optoelectronic Applications","authors":"Sarath Ravi, Rakhi Sreedharan, K. R. Raghi, T. K. M. Kumar, K. Naseema","doi":"10.1002/crat.202000076","DOIUrl":"https://doi.org/10.1002/crat.202000076","url":null,"abstract":"Good quality single crystals of a non‐linear optical (NLO) material, quinolinium 4‐aminobenzoate (ABAQ), are grown by employing solution growth technique. The crystal structure is confirmed via single crystal X‐ray diffraction studies. Grown crystals of the ABAQ compound are characterized by powder X‐ray diffraction, Fourier transform infrared, thermal analysis, and mechanical studies. Ultraviolet–vis–near infrared (UV–vis–NIR) and photoluminescence spectra reflect the optical transmission range of the obtained compound. Dielectric studies and laser damage threshold measurement are carried out to verify the non‐linear activity and surface resistance of the grown crystal. From the Kurtz Perry powder technique, the second harmonic generation efficiency of the ABAQ compound is estimated to be 90% that of the standard potassium dihydrogen phosphate. Z‐Scan technique is performed to investigate the non‐linear behavior of ABAQ crystal. The suitability of ABAQ material for optical limiting and switching applications is also verified. Computational analysis performed upon the stable geometry of ABAQ molecule using density functional theory strongly supports the experimental findings with a significant chemical background. The non‐linear behavior of the title compound is determined by investigating various non‐linear optical (NLO) parameters of electric dipole moment, polarizability, and hyperpolarizability. Based on these inferences, the ABAQ material can be declared as a promising material for optical limiting and switching applications in optoelectronics regime.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"1 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2020-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87785316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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