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Engineering novel mask absorber materials for next-generation EUVL 用于下一代EUVL的工程新型掩膜吸收材料
Extreme Ultraviolet Lithography 2020 Pub Date : 2020-09-20 DOI: 10.1117/12.2573112
P. Naujok
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引用次数: 0
Multilayer optimization for high-NA EUV mask3D suppression 高na EUV掩模3d抑制的多层优化
Extreme Ultraviolet Lithography 2020 Pub Date : 2020-09-20 DOI: 10.1117/12.2574450
E. V. Setten, K. Rook, H. Mesilhy, F. Timmermans, G. Bottiglieri, Meng H. Lee, A. Erdmann, T. Brunner
{"title":"Multilayer optimization for high-NA EUV mask3D suppression","authors":"E. V. Setten, K. Rook, H. Mesilhy, F. Timmermans, G. Bottiglieri, Meng H. Lee, A. Erdmann, T. Brunner","doi":"10.1117/12.2574450","DOIUrl":"https://doi.org/10.1117/12.2574450","url":null,"abstract":"Today’s EUV masks are optimized for maximum reflectivity at 6o angle of incidence to support imaging on the 0.33NA scanners. The High-NA EUV scanner will have an NA of 0.55 and anamorphic optics to keep the angles on mask level compatible with current masks. However, for selected use-cases increased Mask-3D effects are observed. \u0000In this presentation, we will show the root-cause of these enhanced M3D effects for High-NA EUV and the role of the mask multilayer, as well as how to improve it. We will also show some first experimental results of an ion beam deposited RuSi test sample.","PeriodicalId":106300,"journal":{"name":"Extreme Ultraviolet Lithography 2020","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132157293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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